• Title/Summary/Keyword: TWPD

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Microwave Characteristics Analysis of TWPD′s Using the FDTD Method (FDTD를 이용한 TWPD의 마이크로파 특성 분석)

  • Gong, Sun-Cheol;Lee, Seung-Jin;Lee, Jeong-Hun;Ok, Seong-Hae;Choe, Yeong-Wan
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.39 no.4
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    • pp.63-71
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    • 2002
  • In this paper, we present microwave characteristics of traveling-wave photodetectors (TWPD) using the finite-difference time-domain method (FDTD). Current and voltage in the time domain are calculated by the FDTD. Also, characteristic impedance and propagation constant in frequency domain are obtained from the time-domain data. As the thickness of i-layer gets thicker and the waveguide width gets narrower, TWPD's show less microwave loss and higher velocity. The 50Ω impedance matching design is achieved for 2.4${\mu}{\textrm}{m}$ waveguide width and 1.2${\mu}{\textrm}{m}$ thickness of i-layer at 100 GHz.

High-Speed Traveling-Wave Photodetector with a 3-dB Bandwidth of 410 GHz

  • Park, Jeong-Woo;Han, Sangpil;Lee, Donghun;Ryu, Han-Cheol;Shin, Jun-Whan;Kim, Namje;Yoon, Young-Jong;Ko, Hyunsung;Park, Kyung Hyun
    • ETRI Journal
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    • v.34 no.6
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    • pp.942-945
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    • 2012
  • A high-speed traveling-wave photodetector (TWPD) with an InGaAs absorber is designed and realized. The bandwidth of the TWPD is measured using electro-optic sampling techniques. The bandwidth is 410 GHz, which shows that the RC limitation is overcome. While the TWPD shows a low responsivity of 0.06 A/W at 1,550 nm, this value can be improved through further optimization of the structure without a sacrifice in bandwidth.

Analysis of Frequency Characteristic of Travelling-Wave Photodetector Using the FDTD Method (FDTD를 이용한 Travelling-Wave Photodetector의 주파수 특성 해석)

  • 공순철;이정훈;이승진;최영완
    • Proceedings of the Optical Society of Korea Conference
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    • 2000.02a
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    • pp.14-15
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    • 2000
  • We study the microwave characteristics of traveling-wave photodetector using the finite-difference time-domain method. We present two parameters for design, the width of PIN region and the thickness of i-layer, and analyze TWPD's property in frequency domain.

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