• Informatization Policy
• /
• v.24 no.1
• /
• pp.79-99
• /
• 2017

Despite the early success story, the pan-industry diffusion of big data has been slow mostly due to lack of confidence of the value creation and privacy-related concerns. The problem leads us to the need to a stakeholder analysis on the adoption process of big data. The present study combines technology acceptance model, task-technology fit theory, and privacy calculus theory to integrate the positive and negative factors on the big data adoption. The empirical analysis was performed based on the survey from the current and potential big data users. Results revealed perceived usefulness, task-technology fit, and privacy concern are significant antecedents to the intention to use big data. Furthermore, there are significant differences in the perceptions of each constructs among groups divided by the types of big data use, with several exceptions. And the control effect was found in the magnitude of the relation between independent variables and dependent variable. The theoretical and politic implications of the analysis are discussed as to the promotion of big data industry.

• Transactions of the Korean Society of Automotive Engineers
• /
• v.11 no.1
• /
• pp.128-136
• /
• 2003

In today's design trend of vehicle structure, crush zone is fiequently reinforced by adding a box-shaped sub-frame in order to avoid an excessive deformation against a high-speed offset barrier such as EU Directive 96/97 EC, IIHS offset test. That kind of vehicle structure design results in a relatively monotonic crash pulse for airbag ECU(Electronic Control Unit) located at non-crush zone. As for an angular crash event, the measured crash signal using a single-axis accelerometer in a longitudinal direction is usually weaker than that of frontal barrier crash. Therefore, it is not so easy task to achieve a satisfactory crash discrimination performance for offset and angular crash events. In this paper, we introduce a new crash discrimination algorithm using an electronic X-Y 2-axis accelerometer in order to improve crash discrimination performance especially for those crash events. The proposed method uses a crash signal in lateral direction(Y-axis) as well as in longitudinal direction(X-axis). A crash severity measure obtained from Y-axis acceleration is used to improve the discrimination between fire and no-fire events. The result obtained by the proposed measure is logically ORed with an existing algorithm block using X-axis crash signal. Simulation and pulse injection test have been conducted to verify the performance of proposed algorithm by using real crash data of a 2,000cc passenger vehicle.

• Journal of the Microelectronics and Packaging Society
• /
• v.12 no.1 s.34
• /
• pp.53-58
• /
• 2005

We researched damage formation and failure mechanism under DC(direct current) and AC(alternative current) in order to estimate reliability of Cu interconnects in ULSI. Higher current density and temperature induces more short TTF(time to failure) during interconnects carry DC. Measurement reveals that Cu electromigration has activation energy of 0.96eV and current density exponent value of 4. Thermal fatigue is occurred under DC, and higher frequency and ${\Delta}$T value gives more severe damage during interconnects carry AC Through failure morphology analysis with respect to texture, we observed that damages had grown widely and facetted grains had appeared in (100)grain but damages in (111) had grown thickness direction of line and had induced a failure rapidly.

• Journal of the Korean Vacuum Society
• /
• v.15 no.1
• /
• pp.89-96
• /
• 2006

Recent ULSI and multilevel structure trends in microelectronic devices minimize the line width down to less than $0.25{\mu}m$, which results in high current densities in thin film interconnections. Under high current densities, an EM(electromigration) induced failure becomes one of the critical problems in a microelectronic device. This study is to improve thin film interconnection materials by investigating the EM characteristics in Ag, Cu, Au, and Al thin films, etc. EM resistance characteristics of Ag, Cu, Au, and Al thin films with high electrical conductivities were investigated by measuring the activation energies from the TTF (Time-to-Failure) analysis. Optical microscope and XPS (X-ray photoelectron spectroscopy) analysis were used for the failure analysis in thin films. Cu thin films showed relatively high activation energy for the electromigration. Thus Cu thin films may be potentially good candidate for the next choice of advanced thin film interconnection materials where high current density and good EM resitance are required. Passivated Al thin films showed the increased MTF(Mean-time-to-Failure) values, that is, the increased EM resistance characteristics due to the dielectric passivation effects at the interface between the dielectric overlayer and the thin film interconnection materials.