• Journal of the Microelectronics and Packaging Society
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• v.5 no.1
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• pp.31-38
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• 1998

저온소결기판용 Glass-ceramics를 제조하기 위해 LiO2-MgO-MgF2-SiO2계 조성에 서 B2O3첨가가 결정화 특성 및 물성에 미치는 영향을 고찰하였다. 145$0^{\circ}C$에서용융하여 제조 한 모유리의 핵형성 온도와 결정화 온도를 결정하기 위해 TMA와 DTA분석을 실시하였다. 결정화시킨 유리의 결정상과 미세구조를 관찰하기 위하여 XRD와 SEM관찰을 실시하였다. Water swelling을 통해 Glass-ceramics powder를 제조하였으며 제조한 powder의 평균입자 크기는 8.32$\mu$m였다.

• Journal of the Microelectronics and Packaging Society
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• v.5 no.1
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• pp.91-100
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• 1998

본논문에서는 현재 다 핀용 패키지로 주종을 이루고 있는 기존의 PQEP의 성능을 향상시키기 위하여 스트립 라인 배선 구조를 갖는 새로운 PQEP를 제안하였다. 기존의 208 핀 PQFP와 제안한 208핀 PQFP의 전기적 특성을 Ansoft사의 Maxwell TMA사의 Raphael 과 Avanti사의 HSPICE를 이용하여 시뮬레이션하여 비교하였다. 새로운 패키지에서는 신호 선과 파워버스라인을 스트립 구조로 만들고 감결합커패시터를 장착하여 크로스톡 잡음과 스 위칭 잡음을 크게 감소시켰다. 패키지의 리드프레임을 스트립구조로 만들기 위하여 구리가 도포된 유연성 쿠폰을 리드프레임의양측면에 부착하였다. 신호선의 특성 임피던스는 쿠폰의 유전층 두께변화를 조절함으로써 최적화하였고 유전층 두께가 100$\mu$mdlfEo 45$\Omega$의 값을 얻 었다. 시뮬레이션 결과와 측정결과 32개의 소자가 동시에 스위칭하고 전원/접지핀이 전체 리드 수의 33%일 때 동작주파수가 330Mhz됨을 확인하였으며 이는 기존 PQFP의 최대 동 작주파수인 100MHz에 비하여 3배 이상 향상됨을 보였다.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.12 no.1
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• pp.15-21
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• 2013

The safety and stability of 5MW class offshore wind turbine Jack-up platform was investigated through ocean basin experiment. For simulating the environmental condition of yellow sea in the South Korea, diverse waves, winds and currents were performed based on Froude's number. Regular wave and irregular wave based on Froude's number were applied to the wind turbine structure. In experiments, the height and period of regular wave type were scaled down as the 1:50 ratio of real wave condition. Irregular wave type was simulated with TMA(Texel Storm, Marsen and Arsloe)spectrum. The vertical reaction force, resonance period and wave pressure applied to multi-supporters of wind offshore structure were measured experimentally. Finally, the results showed that the capsizing situation of the offshore structure was generated by the severe environmental condition.

• Journal of the Microelectronics and Packaging Society
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• v.4 no.2
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• pp.55-62
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• 1997

P2O3-PbO-SiO2-Al2O3계 조성을 이용하여 저온에서 소결이 가증하며 열팽창계수와 유전율이 낮은 회로기판용 glass ceramics를 제조하고자 하였다. 155$0^{\circ}C$에서 2시간 동안 용 융하여 제조한 모유리의열팽창 거동을 확인하기 위하여 TMA로 열분석을 실시하였으며 이 유리를 분말화하여 80$0^{\circ}C$에서 열처리 하였다. 이때 cristobalite 형성억제제로 Ga2O3를 사용 하였으며 Ga2O3 첨가량에 따른 억제 영향을 XRD를 통행 확인하였다. Ga2O3를 첨가한 유리 분말로 pellet을 제조하여 열처리를 하였고 소결시편의 표면을 SEM을 통해 관찰하였다. 열 처리한 pellet에 silver paste를 screen printing하여 유전율을 측정하였으며 조성에 따른 유 전율의 변화를 확인하였다.

• Proceedings of the KSME Conference
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• 2004.04a
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• pp.1165-1170
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• 2004

The purpose of this study is to investigate the supercooling improvement of TMA30wt% clathrate when the chloroform is added to it. For this purpose, phase change temperature and supercooling are measured and evaluated experimentally in heat source of $-7^{/circ}C$. The results show that phase change temperature and supercooling are improved. From the results, this research can provide and important data for the low temperature thermal storage.

• Journal of Environmental Health Sciences
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• v.35 no.3
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• pp.191-200
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• 2009

We investigated a trait of odor and the relationship between odor unit and odorous compounds using multiple regression analysis based on data compiled from Sihwa (SIC), Banwol (BIC), Banwol plating (BPIC) and Poseung industrial complex (PIC). These areas are odor control areas in Gyeonggi province. It was revealed that $NH_3$ and styrene concentrations in SIC and BPIC were relatively higher and $H_2S$ concentration especially in mc was more than five times higher than other areas. As a result of regression analysis using SAS, intensity of odor unit was highly related to concentrations of $H_2S$, TMA, styrene and n-valeraldehyde in SIC, $H_2S$, acetaldehyde, and butyraldehyde in BPIC and $NH_3$ in BIC.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.271-271
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• 2010

고효율 실리콘 태양전지를 제작하기 위하여 surface passivation, 레이저와 lithography기술들이 연구되어 지고 있다. 결정질 실리콘 태양전지의 기판의 두께가 점점 얇아지면서 surface-to-volume 비율이 증가되어 surface passivation은 매우 중요하다. surface passivation은 크게 2가지 방법으로 진행되고 있으다. 첫 번째는 Si의 dangling bond의 passivation과 surface recombination process 제어에 기초를 두고 있다. 일반적으로 박막을 이용한 실리콘 passivation은 $SiO_2$, SiN, a-Si, $Al_2O_3$박막 4가지가 이용되어 왔다. 본 연구에서는 p-type SoG기판위에 원자층 증착법(ALD)을 이용하여 $Al_2O_3$박막의 negative fixed charge의 internal electric field로 surface passivation을 연구하였다. TMA와 $H_2O/O_3$을 사용하여 ALD $Al_2O_3$를 10~30nm두께를 갖도록 증착하였다. 표면 처리 조건, $Al_2O_3$박막 두께, ALD 공정 조건과 후열처리등에 따른 실리콘의 특성, carrier lifetime변화를 측정하여 효과적인 field induced passivation을 제시하고자 한다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.4
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• pp.350-354
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• 2009

$Al_{2}O_{3}$ thin films were deposited on GaN(0001) by using a Remote Plasma Atomic Layer Deposition(RPALD) technique with a trimethylaluminum(TMA) precursor and oxygen radicals in the temperature range of $25{\sim}500^{\circ}C$. The growth rate per cycle was varied with the substrate temperature from $1.8{\AA}$/cycle at $25^{\circ}C$ to $0.8{\AA}$/cycle at $500^{\circ}C$. The chemical structure of the $Al_{2}O_{3}$ thin films was studied using X-ray photoelectron spectroscopy(XPS). The electrical properties of $Al_{2}O_{3}$/GaN Metal-Insulator-Semiconductor (MIS) capacitor grown at a $300^{\circ}C$ process temperature were excellent, a low electrical leakage current density(${\sim}10^{-10}A/cm^2$ at 1 MV) at room temperature and a high dielectric constant of about 7.2 with a thinner oxide thickness of 12 nm. The interface trap density($D_{it}$) was estimated using a high-frequency C-V method measured at $300^{\circ}C$. These results show that the RPALD technique is an excellent choice for depositing high-quality $Al_{2}O_{3}$ as a Sate dielectric in GaN-based devices.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2003.10a
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• pp.93-96
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• 2003

Recently, various bulk metallic glasses (BMG's) haying good mechanical and chemical properties were developed. BMG's can easily be deformed in the supercooled liquid region, via viscous flow mechanism. In our previous work, we evaluated the deformation behavior and some other basic properties of Z $r_{41.2}$ $Ti_{13.8}$C $u_{12.5}$N $i_{10}$B $e_{22.5}$ alloy. In this study, we investigated the micro forming of Z $r_{41.2}$ $Ti_{13.8}$C $u_{12.5}$N $i_{10}$B $e_{22.5}$ alloy. The process condition was chosen based on the viscosity data from TMA, and superalloy and Si wafer with micro patterns on the surface were used as forming die. The alloy showed good replication of the patterns. However, some stripe patterns, resembling scratches, appeared on the deformed alloy surface. These scratches can be reduced or eliminated by polishing before forming.ing.ore forming.ing.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.6
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• pp.470-475
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• 2009

We deposited $Al_2O_3$ thin films on GaN by remote plasma atomic layer deposition (RPALD) technique, trimethylaluminum(TMA) and oxygen were used as precursors, at fixed process condition, the number of cycle were changed. Growth rate per cycle was $1.2\;{\AA}$/cycle. and Growth rate was in proportion to a number of cycle, the GaN MIS capacitors that $Al_2O_3$ thin film were deposited above 12 nm, have excellent electrical properties, a low electrical leakage current density(${\sim}10^{-10}\;A/cm^2$ at 1.5 MV), but below 12 nm, we can see the degradation of the leakage current density. After post deposition annealing, Dielectric constant was estimated by 1 MHz high-frequency C-V method, it was varied with the anealing temperature from 6.9 at no post anealed to 7.6 at $800^{\circ}C$, and we can see a improvement of the leakage current density and breakdown voltage by post deposition anealing below $700^{\circ}C$, but, after anealed at $800^{\circ}C$, we can see the degradation of the leakage current density and breakdown voltage.