• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1763-1766
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• 2007

Three technical obstacles must be overcome to build a fruitful business in the nascent industry of flexible microelectronics: the self-heating effect of thin film transistors (TFTs), the thermal and mechanical durability of flexible devices, and the cost issue. The self-heating effect is controlled through TFT shape, TFT electrical performance, dimensional reduction and energy-efficient circuits. Plastic engineering is one of the keys to solving thermal and mechanical durability problems faced by flexible microelectronics devices. For the Suftla flexible microelectronics business to be viable, Suftla transfer yield must be sufficiently high to keep down device cost. Improving the transfer yield is not easy, but it is the same challenge already faced and cleared in the TFT liquid crystal display industry.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1297-1300
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• 2008

Electrical stress degradation of low temperature, amorphous silicon thin film transistors is reviewed, and the implications for various types of flexible circuitry including active matrix backplanes, integrated drivers and general purpose digital circuitry are examined. A circuit modeling tool that enables the prediction of complex circuit degradation is presented.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.201-204
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• 2008

Based on the device physics, a new I-V equation for TFTs is derived and a simple parameter extraction method is suggested. The new method gives more physically meaningful threshold voltage and mobility, and the obtained values can be directly used for the TFT device modeling.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.190-193
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• 2006

we implemented pentacene TFTs able to operate at low voltage less than 2V by using ultrathin Al2O3 layer as a gate insulator. The OTFTs exhibited a mobility of $0.27{\pm}0.05\;cm^2/Vs$, an outstanding subthreshold slope of $0.109{\pm}0.027$, and an on/off current ratio of $2.87{\pm}1.07{\times}10^4$. OTFT operated at low voltage, producing 3.5uA at $V_GS$= 2V and $V_DS$= 1.5V.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1424-1427
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• 2005

In this paper, we studied on the application of Organic Thin Film Transistors (OTFTs) to the active matrix organic light emitting diodes (AMOLED). We designed organic transistor based pixel circuits for AMOLED. The pixel circuit is consisted of two-transistor, one-capacitor and one-OLED. We report the simulation results of the pixel circuits that OLED current varied as the data line and scan line voltage. Also, we will describe the fabrication process of the Pentacene OTFTs arrays and the organic light emitting diodes. The driving results of the fabricated unit pixels and their 4x4 arrays are also presented.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1279-1282
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• 2006

An ultra low-power down-conversion level shifter using low temperature poly-crystalline silicon thin film transistors is proposed for mobile applications. The simulation result shows that the power consumption of the proposed circuits is only 17% and the propagation delay is 48% of those of the conventional cross-coupled level shifter without additional area. And the measured power consumption is only 21% of that of the crosscoupled level shifter.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1287-1290
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• 2006

A high speed analog buffer using polycrystalline silicon (poly-Si) thin film transistors (TFT) is proposed for 2.2-inch quarter video graphic adapter (qVGA) TFT-LCD panel. Simulation results show that the settling time of the proposed circuit is $10{\mu}sec$ in 2.2-inch qVGA and the power consumption of proposed analog buffer is $25{\mu}W$.

• Journal of Information Display
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• v.6 no.1
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• pp.12-16
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• 2005

Gate and data drivers are essential for driving active matrix display. In this study, we integrate drivers with a-Si:H to develop a compact, better reliability and cost effective display. We design and fabricate drivers with conventional a-Si:H thin film transistors (TFTs). The output voltages are investigated according to the input voltage, temperature and operation time. Based on these studies, we propose here a new driver to prevent gate line from the floated state. For the external coupled voltage fluctuation, the proposed driver shows better stability.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.653-655
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• 2003

Using stacked organic gate insulators and active layer of pentacene deposited at elevated temperatures, pentacene-based organic thin-film transistors(OTFTs) with improved electrical characteristics have been fabricated. Stacked PVP(Polyvinylphenol)-polystyrene gate insulators could compensate the demerits and take advantage of the merits of each other [1]. Also, for the better device performance, moderate substrate heating and high deposition rate of pentacene active layer was adopted [2, 3].

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1515-1517
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• 2001

In this work the electrical characteristics of organic TFTs with the semiconductor-insulator interfaces have been interested. Pentacene is used as an active semiconducting layer. The semiconductor layer of pentacene was thermally evaporated in vacuum at a pressure of about $2{\times}10^{-6}$ Torr and at a deposition rate of 0.3$\AA$/sec. Aluminium and gold were used for gate and source/drain electrodes. before pentacene is deposited on the insulator, the gate dielectric surfaces of two samples were rubbed with lateral and perpendicular to direction of the channel length respectively.