• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.137-140
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• 1998

An active-matrix LCD using thin film transistors (TFT) has been widely recognized as having potential for high-quality color flat-panel displays. Pixel-Design Array Simulation Tool (PDAST) was used to profoundly understand the gate si후미 distortion and pixel charging capability. which are the most critical limiting factors for high-quality TFT-LCDs. Since PDAST can simulate the gate, data and pixel voltages of a certain pixel on TFT array at any time and at any location on an array, the effect of the resistivity of gate line material on the pixel operations can be effectively analyzed. The gate signal delay, pixel charging ratio and level-shift of the pixel voltage were simulated with varying the parameters. The information obtained from this study could be utilized to design the larger area and finer image quality panel.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.1-4
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• 2000

We have developed a high performance vertical alignment TFT-LCD, that shows a high light transmittance, and wide viewing angle characteristics with an unusually high contrast ratio. In order to optimize the electro-optical properties we have studied the effect of cell parameters, multi-domain structure and retardation film compensation. With the optimized cell parameters and process conditions, we have achieved a 24" wide UXGA TFT-LCD monitor (16:10 aspect ratio 1920X1200) showing a contrast ratio over 500:1, panel transmittance near 4.5%, response time near 27 ms, and viewing angle higher than 80 degree in all directions.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.376-379
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• 2007

Although years of trials for the fabrication of TFT LCD color filters with the piezo Drop-On-Demand (DOD) inkjet printing technology have been made, the underlying physics of jetting and wetting has not been fully understood. In this study, the key engineering issues, jetting and wetting, are investigated with mathematical models.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.85-88
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• 2004

2-inch qVGA (240${\times}$320) TFT-LCD with integrated 6-bit source driver is reported. The pixel density is over than 200ppi and the operation frequency is about 2.8MHz. In order to improve TFT characteristics, TS-SLS (Two-Shot Sequential Lateral Solidification) technology has been employed. A 1:6 demultiplexing scheme has been successfully implemented in the source driver owing to the superb characteristics of the TS-SLS TFTs, which resulted in small driver circuit area.

• The Transactions of the Korea Information Processing Society
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• v.6 no.9
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• pp.2548-2557
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• 1999

As the size of the FPD(Flat Panel Display) becomes larger and its resolution is higher, it is required a new controller to support these specifications. In this paper, we have designed a universal controller of a-Si TFT LCD which will dominate the future market. We propose a new type of a LCD controller, which is constructed by four-line parallel-bus architecture and can enlarge low resolution images to SXGA class images by using a new interpolation algorithm. The proposed LCD controller has been simulated and synthesized by using Synopsys VHDL.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.9
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• pp.135-141
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• 2004

Anti-shock performance is one of the most important design specifications of TFT-LCD modules. Since they are adopted fur major display units of many mobile applications such as lap-top PCs, cellular phones, and palm pilots, they are able to accommodate and endure high level transient mechanical energy inputs. For the reasons, not only the LCD unit manufacturers but their customers like PC makers perform a series of strict impact/drop test on the units. Currently, designers are mostly relying on their own trial-error based experience for the anti-shock design. Thus those designs depending on only experience may result in disqualification from the drop/impact test during final product evaluation. Those shock failures of any new designs are prohibitive for both LCD and PC manufacturers. In order to avoid this problem, many designers are focusing on the development of computer-aided design tools that is directly connected to shock simulation capabilities and then shock-proof design cycle time could be significantly reduced. Development of an integrated CAE system for the shock-proof design is presented in this article. At every stages of the development of present work, practical industrial applicability and mass production feasibility are seriously considered and tested so that the system is to be used in the LCD design engineering field.

• Proceedings of the KIEE Conference
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• 2006.07d
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• pp.2061-2062
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• 2006

a-Si(amorphous silicon) TFT(thin film transistor)는 TFT-LCD(liquid crystal display)의 화소 스위칭(switching) 소자로 폭넓게 이용되고 있다. 현재는 a-Si을 이용하여 gate drive IC를 기판에 집적하는 ASG(amorphous silicon gate) 기술이 연구, 적용되고 있는데 이때 가장 큰 제약은 문턱 전압(Vth)의 이동이다. 특히 고온에서는 문턱 전압의(Vth) 이동이 가속화 되고, Ioff current가 증가 하게 되고, 저온($0^{\circ}C$)에서는 전류 구동능력이 상온($25^{\circ}C$) 상태에서 같은 게이트 전압(Vg)에 대해서 50% 수준으로 감소하게 된다. 특히 ASG 회로는 여러 개의 TFT로 구성되는데, 각각의 TFT가 고온에서 Vth shift 값이 다르게 되어 설계시 예상하지 못 한 고온에서의 화면 무너짐 현상 즉 고온 노이즈 불량이 발생 할 수 있다. 고온 노이즈 불량은 고온에서의 각 TFT의 문턱전압 및 $I_D-V_G$ 특성을 측정한 결과 고온 노이즈 불량에 영향을 주는 인자가 TFT의 width와 기생 capacitor비 hold TFT width가 영향을 주는 것으로 실험 및 시뮬레이션 결과 확인이 되었다. 발생 mechanism은 ASG 회로는 AC 구동을 하기 때문에 Voff 전위에 ripple이 발생 되는데 특히 고온에서 ripple이 크게 증가 하여 출력 signal에 영향을 주어 불량이 발생하는 것을 규명하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.944-947
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• 2005

Highly stable gate driver circuit using a-Si TFT has been developed. The circuit has dual-pull down structure, in which bias stress to the TFTs is relieved by alternating applied voltage. The circuit has been successfully integrated in 4-in. QVGA and 14-in. XGA TFT-LCD with a normal a-Si process, which are stable for over 2,000 hours at $60^{\circ}C$. The enhancement of stability of the circuit is attributed to retarded degradation of pull-down TFTs by AC driving.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.583-586
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• 2009

A 14.1" XGA (1024${\times}$768) LCD panel with Integrated Black Data Insertion (IBDI) has been world first developed successfully based on the integrated amorphous Silicon TFT gate driver which we previously introduced. The notable features compared with the conventional integrated a-Si TFT gate driver circuit are that the circuit consists of Dual buffer, Carry buffer structure, and Q-node cross charging for stable signal scanning characteristic and prevention of coupling between signal lines.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.940-943
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• 2005

The characteristics of a-Si:H TFTs with silicon oxide as passivation layer were reported. It was studied that the insulating characteristics and step coverage characteristics of low temperature silicon oxide before applying to a-Si:H TFT fabrications. With the optimum deposition conditions considering electrical and deposition characteristics, low temperature silicon oxide was applied to a-Si:H TFTs. The changes in characteristics of a-Si:H TFTs were analyzed after replacing silicon nitride passivation layer with low temperature silicon oxide layer. This low temperature silicon oxide can be adapted to high resolution a-Si:H TFT LCD panels.