• Journal of the Korean Data and Information Science Society
• /
• v.16 no.4
• /
• pp.823-833
• /
• 2005

This paper deals the TFT-LCD process and quality, process control problems of the process. For improvement of the process quality and yield, we apply a data mining technique to the LCD industry. And some unique quality features of the LCD process are also described. We describe some preceding researches first and relate to the TFT-LCD process and the problems of data mining in the process. Also we tried to observe the problems which need to solve first and the features from description below hazard must be considered a quality mining in LCD industry.

• Journal of Information Display
• /
• v.6 no.3
• /
• pp.18-21
• /
• 2005

A new technology for reducing photolithography process from a four step to a three step process in the fabrication of TFT LCD is introduced. The core technology for 3-mask-TFT processes is the lift-off process [1], by which the PAS and PXL layers can be formed simultaneously. A different method of the lift-off process was developed in order to enhance the performance of efficiency with conventional positive and not negative PR which is the generally used in other lift-off process. In addition, the removal capacity of the ITO/PR in lift-off process was evaluated. The evaluation results showed that the new process can be run in conventional TFT production condition. In order to apply this new process in existing TFT process, several tests were conducted to ensure stability of the TFT process. It was found that the outgases from PR on the substrate in ITO sputtering chamber do not raise any problem, and the deposited ITO film beside the PR has conventional ITO qualities. Furthemore, the particles that were produced due to the ITO chips in PR strip bath could be reduced by the existing filtering system of stripper. With the development of total process and design of the structure for TFT using this technology, 3-mask-panels were achieved in TN and IPS modes, which showed the same display performances as those with the conventional 4mask process. The applicability and usefulness of the 3-mask process has already verified in the mass production line and in fact it currently being used for the production of some products.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.597-600
• /
• 2006

The silver gate and source/drain electrodes for an a-Si thin film transistor were fabricated by the selective electroless plating (SELP) process. Relevant physical properties including taper angle, uniformity and resistivity are investigated. The Ag layer was about 150nm to 250nm thick, the resistivity less than $3{\times}10^{-6}$ Ohm-cm and the taper angle 45'-60' and the nonuniformity less than 10% on G2 substrates. The transfer characteristics with the Ag gate, and source/drain electrodes respectively possessed good field effect mobility similar to conventionally fabricated a-Si TFTs. This process provided low resistivity, low cost and ease of processing.

• Journal of Information Display
• /
• v.7 no.3
• /
• pp.1-4
• /
• 2006

2.22-inch qVGA $(240{\times}320)$ amorphous silicon thin film transistor liquid active matrix crystal display (a-Si TFT-AMLCD) panel has been successfully demonstrated employing a 2.5 um fine-patterning technology by a wet etch process. Higher resolution 2.22-inch qVGA LCD panel with an aperture ratio of 58% can be fabricated as the 2.5 um fine pattern formation technique is integrated with high thermal photo-resist (PR) development. In addition, a novel concept of unique a-Si TFT process architecture, which is advantageous in terms of reliability, was proposed in the fabrication of 2.22-inch qVGA LCD panel. Overall results show that the 2.5 um fine-patterning is a considerably significant technology to obtain higher aperture ratio for higher resolution a-Si TFT-LCD panel realization.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.250-253
• /
• 2008

A touch screen panel embedded 12.1-inch TFT LCD employing a standard a-Si:H TFT process has been successfully developed. Compared with conventional external touch screen panels, the new internal TSP exhibits a clearer image and improved touch feeling. Our new internal proposed TSP can be fabricated with low cost.

• Proceedings of the Korean Operations and Management Science Society Conference
• /
• 2005.05a
• /
• pp.372-376
• /
• 2005

TFT-LCD(박막 트랜지스터 액정 디스플레이, Thin Film Transistor - Liquid Crystal Display) 산업은 현재 국가의 기간산업으로서 국제경쟁력을 갖추고 있는 몇 안되는 산업 분야 중 하나이다. 따라서, 본 논문에서는 통계적 공정 관리 및 품질 관리 관점에서 TFT-LCD 공정의 특징과 이에 필요한 요소들을 제안하고자 한다.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.1649-1652
• /
• 2006

2.22-inch qVGA $(240{\times}320)$ amorphous silicon thin film transistor liquid active matrix crystal display (${\alpha}$- Si TFT-AMLCD) panel has been successfully demonstrated employing a 2.5 um fine-patterning technology by a wet etch process. Higher resolution 2.22-inch qVGA LCD panel with an aperture ratio of 58% can be fabricated because the 2.5 um fine pattern formation technique is combined with high thermal photo-resist (PR) development. In addition, a novel concept of unique ${\alpha}$-Si TFT process architecture, which is advantageous in terms of reliability, was proposed in the fabrication of 2.22-inch qVGA LCD panel. Overall results show that the 2.5 um finepatterning is a considerably significant technology to obtain higher aperture ratio for higher resolution ${\alpha}$-Si TFT-LCD panel realization.

• Journal of Information Display
• /
• v.5 no.2
• /
• pp.1-5
• /
• 2004

We developed an a-Si TFT-LCD panel with integrated gate driver circuit using a standard 5-MASK process. To minimize the effect of the a-Si TFT current and LC's capacitance variation with temperature, we developed a new a-Si TFT circuit structure and minimized coupling capacitance by changing vertical architecture above gate driver circuit. Integration of gate driver circuit on glass substrate enables single chip and 3-side free panel structure in a-Si TFT-LCD of QVGA ($240{\times}320$) resolution. And using double ASG structure the dead space of TFT-LCD panel could be further decreased.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.205-207
• /
• 2008

The new process for hybrid silicon thin film transistor (TFT) using DPSS laser has been developed for realizing both low-temperature poly-Si (LTPS) TFT and a-Si:H TFT on the same substrate as a backplane of active matrix liquid crystal display. LTPS TFTs are integrated on the peripheral area of the panel for gate driver integrated circuit and a-Si:H TFTs are used as a switching device for pixel in the active area. The technology has been developed based on the current a-Si:H TFT fabrication process without introducing ion-doping and activation process and the field effect mobility of $4{\sim}5\;cm^2/V{\cdot}s$ and $0.5\;cm^2/V{\cdot}s$ for each TFT was obtained. The low power consumption, high reliability, and low photosensitivity are realized compared with amorphous silicon gate driver circuit and are demonstrated on the 14.1 inch WXGA+ ($1440{\times}900$) LCD Panel.

• Electrical & Electronic Materials
• /
• v.19 no.9
• /
• pp.28-32
• /
• 2006

A 7.0-inch transmissive type plastic TFT-LCD was developed at the resolution of 640 $\times$ 3 $\times$ 480 lines (114ppi). All of the processed of TFT, color filter and LC were carried out below $130^{\circ}C$ on PES plastic films. The process conditions of TFT, color filter and LC were optimized for large area TFT-LCD on plastic substrate. The backplane and the color filter was strongly adhered while the panel was bending by using holding spacers.