• Title/Summary/Keyword: TEM Journal

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Preparation and Characterization of Fe-Ni Nanocatalyst for AEM Electrolysis via Spontaneous Reduction Reaction in Dry Process (건식 공정에서 자발적 환원 반응에 의한 AEM 수전해용 Fe-Ni 나노 촉매 제조 및 특성)

  • JAEYOUNG LEE;HONGKI LEE
    • Journal of Hydrogen and New Energy
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    • v.35 no.2
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    • pp.185-194
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    • 2024
  • Fe-Ni nanocatalysts loaded on carbon black were prepared via spontaneous reduction reaction of iron (II) acetylacetonate and nickel (II) acetylacetonate in dry process. Their morphology and elemental analysis were characterized by scanning electron microscopy, transmission electron microscopy (TEM), and energy dispersive X-ray analyzer. The loading weight of the nanocatalysts was measured by thermogravimetric analyze and the surface area was measured by BET analysis. TEM observation showed that Fe and Ni nanoparticles was well dispersed on the carbon black and their average particle size was 4.82 nm. The loading weight of Fe-Ni nanocatalysts on the carbon black was 6.83-7.32 wt%, and the value increased with increasing iron (II) acetylacetonate content. As the Fe-Ni loading weight increased, the specific surface area decreased significantly by more than 50%, because Fe-Ni nanoparticles block the micropores of carbon black. I-V characteristics showed that water electrolysis performance increased with increasing Ni nanocatalyst content.

TEM investigation of helium bubble evolution in tungsten and ZrC-strengthened tungsten at 800 and 1000℃ under 40keV He+ irradiation

  • I. Ipatova;G. Greaves;D. Terentyev;M.R. Gilbert;Y.-L. Chiu
    • Nuclear Engineering and Technology
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    • v.56 no.4
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    • pp.1490-1500
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    • 2024
  • Helium-induced defect nucleation and accumulation in polycrystalline W and W0.5 wt%ZrC (W0.5ZrC) were studied in-situ using the transmission electron microscopy (TEM) combined with 40 keV He+ irradiation at 800 and 1000℃ at the maximum damage level of 1 dpa. Radiation-induced dislocation loops were not observed in the current study. W0.5ZrC was found to be less susceptible to irradiation damage in terms of helium bubble formation and growth, especially at lower temperature (800 ℃) when vacancies were less mobile. The ZrC particles present in the W matrix pin the forming helium bubbles via interaction between C atom and neighbouring W atom at vacancies. This reduces the capability of helium to trap a vacancy which is required to form the bubble core and, as a consequence, delays, the bubble nucleation. At 1000 ℃, significant bubble growth occurred in both materials and all the present bubbles transitioned from spherical to faceted shape, whereas at 800 ℃, the faceted helium bubble population was dominated in W.

Review on the structural understanding of the 10S myosin II in the era of Cryo-electron microscopy

  • Anahita Vispi Bharda;Hyun Suk Jung
    • Applied Microscopy
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    • v.52
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    • pp.9.1-9.5
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    • 2022
  • The compact smooth muscle 10S myosin II is a type of a monomer with folded tail and the heads bending back to interact with each other. This inactivated form is associated with regulatory and enzymatic activities affecting myosin processivity with actin filaments as well as ATPase activity. Phosphorylation by RLC can however, shuttle myosin from the inhibited 10S state to an activated 6S state, dictating the equilibrium. Multiple studies contributed by TEM have provided insights in the structural understanding of the 10S form. However, it is only recently that the true potential of Cryo-EM in deciphering the intramolecular interactions of 10S myosin state has been realized. This has led to an influx of new revelations on the 10S inactivation, unfolding mechanism and association in various diseases. This study reviews the gradual development in the structural interpretation of 10S species from TEM to Cryo-EM era. Furthermore, we discuss the utility of Cryo-EM in future myosin 10S studies and its contribution to human health.

Microstructural evolution of tantalum nitride thin films synthesized by inductively coupled plasma sputtering

  • Sung-Il Baik;Young-Woon Kim
    • Applied Microscopy
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    • v.50
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    • pp.7.1-7.10
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    • 2020
  • Tantalum nitride (TaNx) thin films were grown utilizing an inductively coupled plasma (ICP) assisted direct current (DC) sputtering, and 20-100% improved microhardness values were obtained. The detailed microstructural changes of the TaNx films were characterized utilizing transmission electron microscopy (TEM), as a function of nitrogen gas fraction and ICP power. As nitrogen gas fraction increases from 0.05 to 0.15, the TaNx phase evolves from body-centered-cubic (b.c.c.) TaN0.1, to face-centered-cubic (f.c.c.) δ-TaN, to hexagonal-close-packing (h.c.p.) ε-TaN phase. By increasing ICP power from 100 W to 400 W, the f.c.c. δ- TaN phase becomes the main phase in all nitrogen fractions investigated. The higher ICP power enhances the mobility of Ta and N ions, which stabilizes the δ-TaN phase like a high-temperature regime and removes the micro-voids between the columnar grains in the TaNx film. The dense δ-TaN structure with reduced columnar grains and micro-voids increases the strength of the TaNx film.

Crytallization Behavior of Amorphous ${Si_{1-x}}{Ge_x)$ Films Deposited on $SiO_2$ by Molecular Beam Epitaxy(MBE) ($SiO_2$위에 MBE(Moleculat Beam Epitaxy)로 증착한 비정질 ${Si_{1-x}}{Ge_x)$박막의 결정화거동)

  • Hwang, Jang-Won;Hwang, Jang-Won;Kim, Jin-Won;Kim, Gi-Beom;Lee, Seung-Chang;Kim, Chang-Su
    • Korean Journal of Materials Research
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    • v.4 no.8
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    • pp.895-905
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    • 1994
  • The solid phase crystallization behavior of undoped amorphous $Si_{1-x}Ge_{x}$ (X=O to 0.53) alloyfilms was studied by X-ray diffractometry(XRD) and transmission electron microscopy(TEM). Thefilms were deposited on thermally oxidized 5" (100) Si wafer by MBE(Mo1ecular Beam Epitaxy) at 300'C and annealed in the temperature range of $500^{\circ}C$ ~ $625^{\circ}C$. From XRD results, it was found that the thermal budget for full crystallization of the film is significantly reduced as the Ge concentration in thefilm is increased. In addition, the results also shows that pure amorphous Si film crystallizes with astrong (111) texture while the $Si_{1-x}Ge_{x}$ alloy film crystallzes with a (311) texture suggesting that the solidphase crystallization mechanism is changed by the incorporation of Ge. TEM analysis of the crystallized filmshow that the grain morphology of the pure Si is an elliptical and/or a dendrite shape with high density ofcrystalline defects in the grains while that of the $Si_{0.47}Ge_{0.53}$ alloy is more or less equiaxed shape with muchlower density of defects. From these results, we conclude that the crystallization mechanism changes fromtwin-assisted growth mode to random growth mode as the Ge cocentration is increased.ocentration is increased.

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Synthesis of Ceria Nanosphere by Ultrasonic Spray Pyrolysis

  • Kim, Jong-Young;Kim, Ung-Soo;Cho, Woo-Seok
    • Journal of the Korean Ceramic Society
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    • v.46 no.3
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    • pp.249-252
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    • 2009
  • Nanocrystalline ceria particles were prepared by using the ultrasonic spray pyrolysis method. The prepared ceria particles were found to be spherical and non-agglomerated by the SEM and TEM analyses. It was found that carrier gas influences the size and morphology. It was found that the air stream of carrier gas results in porous agglomerated structure of ceria abrasives, whereas solid nano-sphere can be obtained in a more oxidizing atmosphere.

Low Temperature Fireable Borosilicate/Si3N4 Microcomposite Substrates

  • 박인용
    • Journal of the Microelectronics and Packaging Society
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    • v.3 no.1
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    • pp.49-56
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    • 1996
  • 저유전 상수와 저온 소성이 가능한 기판 재료의 제조를 위해 sol-gel법으로 borosilicate/Si3N4 Microcomposite 분말을 합성하였다. Microcomposite 분말의 조성은 borosilicate/Si3N4의 부피비로 50/50, 60/40 및 70/30을 선택하였다. Microcomposite의 성형 체는 건식가압법으로 성형하여 700~100$0^{\circ}C$에서 2시간 동안 소결하였다. Microcomposite 의 미세구조는 SEM과 TEM으로 관찰하였고 소결체의 유전 상수와 밀도를 측정하였다. Microcomposite은 85$0^{\circ}C$ 근처에서 치밀화가 일어나고 유전상수는 약 4.2였다.

Formation and Characterization of Silicon Carbide Whiskers by Acheson Method (에치슨법에 의한 탄화규소 휘스카의 성장과 특성분석)

  • 주한용;김형준
    • Journal of the Korean Ceramic Society
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    • v.27 no.1
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    • pp.136-146
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    • 1990
  • Whiskers of SiC were grown from the mixture of silica and graphite powders by Acheson method(direct heating method). The structrua, morphological and chemical characterizations have been performed by X-ray diffractometer(XRD), transmission electron microscopy(TEM), optical microscopy(OM), scanning electron microscopy(SEM), X-ray photoelectron spectroscopy(XPS) and energy dispersive spectrometer(EDS). The growth mechanism of SiC whiskers is also discussed.

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Recrystallization of Al Thin Film and Formation of AlN by Nitrogen Ion Implantation (질소이온 주입에 의한 Al의 재결정화 및 AlN의 형성에 관한 연구)

  • 조성진;최점수
    • Journal of the Korean Vacuum Society
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    • v.1 no.2
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    • pp.298-301
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    • 1992
  • 진공증착된 Al 다결정 박막에 질소이온을 25keV-50keV, 1 $\times$ 1014-2 $\times$ 1017ions/cm2로 주입하여 박막의 결정구조와 nitride의 형성을 TEM으로 측정하였다. N+2이 온을 에너지 25keV, dose 1 $\times$ 1014ions/cm2로 주입하면 fcc 구조의 Al 결정이 관찰되며, 40keV 이상의 에너지로 2 $\times$ 1017ions/cm2이상 주입하면 AlN이 형성됨을 확인하였다.

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Preparation of Nanophase Titania Film by Plasma Spraying

  • Zhu, Yingchun;Huang, Minhui
    • Journal of the Korean Vacuum Society
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    • v.6 no.S1
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    • pp.23-26
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    • 1997
  • Nanophase titania film was obtained by plasma spraying. The structure of titania film was investigated with transmission electron microscopy (TEM). It was found taht the film was composed of grains with mean particle size of 15nm. The crystal structure of nanophase titania film was found to be anatase phase by electron diffraction.

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