• Journal of Powder Materials
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• v.18 no.2
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• pp.105-111
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• 2011

This study investigated the effect of wire diameter and applied voltage on the fabrication of Ni-free Fe-based alloy nano powders by employing the PWE (pulsed wire evaporation) in liquid, for high temperature oxidation-resistant metallic porous body for high temperature particulate matter (or soot) filter system. Three different diameter (0.1, 0.2, and 0.3 mm) of alloy wire and various applied voltages from 0.5 to 3.0 kV were main variables in PWE process, while X-ray diffraction (XRD), field emission scanning microscope (FE-SEM), and transmission electron microscope (TEM) were used to investigate the characteristics of the Fe-Cr-Al nano powders. It was controlled the number of explosion events, since evaporated and condensed nano-particles were coalesced to micron-sized secondary particles, when exceeded to the specific number of explosion events, which were not suitable for metallic porous body preparation. As the diameter of alloy wire increased, the voltage for electrical explosion increased and the size of primary particle decreased.

• Journal of Powder Materials
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• v.20 no.4
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• pp.269-274
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• 2013

The present work investigated the dispersion behavior of $Y_2O_3$ particles into AISI 316L SS manufactured using laser cladding technology. The starting particles were produced by high energy ball milling in 10 min for prealloying, which has a trapping effect and homogeneous dispersion of $Y_2O_3$ particles, followed by laser cladding using $CO_2$ laser source. The phase and crystal structures of the cladded alloys were examined by XRD, and the cross section was characterized using SEM. The detailed microstructure was also studied through FE-TEM. The results clearly indicated that as the amount of $Y_2O_3$ increased, micro-sized defects consisted of coarse $Y_2O_3$ were increased. It was also revealed that homogeneously distributed spherical precipitates were amorphous silicon oxides containing yttrium. This study represents much to a new technology for the manufacture and maintenance of ODS alloys.

• Journal of Microbiology and Biotechnology
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• v.25 no.7
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• pp.1129-1135
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• 2015

The synthesis of gold nanoparticles has gained tremendous attention owing to their immense applications in the field of biomedical sciences. Although several chemical procedures are used for the synthesis of nanoparticles, the release of toxic and hazardous by-products restricts their use in biomedical applications. In the present investigation, gold nanoparticles were synthesized biologically using the culture filtrate of the filamentous fungus Alternaria sp. The culture filtrate of the fungus was exposed to three different concentrations of chloroaurate ions. In all cases, the gold ions were reduced to Au(0), leading to the formation of stable gold nanoparticles of variable sizes and shapes. UV-Vis spectroscopy analysis confirmed the formation of nanoparticles by reduction of Au³⁺ to Au⁰. TEM analysis revealed the presence of spherical, rod, square, pentagonal, and hexagonal morphologies for 1 mM chloroaurate solution. However, quasi-spherical and spherical nanoparticles/heart-like morphologies with size range of about 7-13 and 15-18 nm were observed for lower molar concentrations of 0.3 and 0.5 mM gold chloride solution, respectively. The XRD spectrum revealed the face-centered cubic crystals of synthesized gold nanoparticles. FT-IR spectroscopy analysis confirmed the presence of aromatic primary amines, and the additional SPR bands at 290 and 230 nm further suggested that the presence of amino acids such as tryptophan/tyrosine or phenylalanine acts as the capping agent on the synthesized mycogenic gold nanoparticles.

• The Korean Journal of Pesticide Science
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• v.4 no.2
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• pp.44-49
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• 2000

Objective of this study was to determine the Si distribution and extent of control of powdery mildew diseases of cucumber(Cucumis sativus L.). The distribution of silicon in the leaf epidermis of cucumber plants grown in hydroponic nutrient solutions supplemented with soluble silicates was examined using scanning electron microscopy and energy dispersive X-ray analysis. The silicate absorbed from nutrient solution was translocated into cucumber leaves, and accumulated mainly in the cells surrounding the base of trichome hairs. Base cells surrounding the trichomes also had high levels of Si, Ca, and K. Si levels in the epidermal cells for low Si treatment were not detectable except in the trichome bases. Hyphal lengths of powdery mildew occurring on cucumber leaves cultivated in medium with high concentration of silicate were remarkably shorter than those of cucumber leaves cultivated with low concentration of silicate. There was a negative correlation between hyphal length of S. fuliginea and silicate concentrations.

• Journal of the Korea Computer Industry Society
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• v.6 no.5
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• pp.757-766
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• 2005

There have been great demands for higher density SRAM in all area of SRAM applications, such as mobile, network, cache, and embedded applications. Therefore, aggressive shrinkage of 6T Full CMOS SRAM had been continued as the technology advances, However, conventional 6T Full CMOS SRAM has a basic limitation in the cell size because it needs 6 transistors on a silicon substrate compared to 1 transistor in a DRAM cell. The typical cell area of 6T Full CMOS SRAM is $70{\sim}90F^{2}$, which is too large compared to $8{\sim}9F^{2}$ of DRAM cell. With 80nm design rule using 193nm ArF lithography, the maximum density is 72M bits at the most. Therefore, pseudo SRAM or 1T SRAM, whose memory cell is the same as DRAM cell, is being adopted for the solution of the high density SRAM applications more than 64M bits. However, the refresh time limits not only the maximum operation temperature but also nearly all critical electrical characteristics of the products such as stand_by current and random access time. In order to overcome both the size penalty of the conventional 6T Full CMOS SRAM cell and the poor characteristics of the TFT load cell, we have developed $S^{3}$ cell. The Load pMOS and the Pass nMOS on ILD have nearly single crystal silicon channel according to the TEM and electron diffraction pattern analysis. In this study, we present $S^{3}$ SRAM cell technology with 100nm design rule in further detail, including the process integration and the basic characteristics of stacked single crystal silicon TFT.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.4
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• pp.314-321
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• 2006

There have been great demands for higher density SRAM in all area of SRAM applications, such as mobile, network, cache, and embedded applications. Therefore, aggressive shrinkage of 6 T Full CMOS SRAM had been continued as the technology advances. However, conventional 6 T Full CMOS SRAM has a basic limitation in the cell size because it needs 6 transistors on a silicon substrate compared to 1 transistor in a DRAM cell. The typical cell area of 6 T Full CMOS SRAM is $70{\sim}90\;F^2$, which is too large compared to $8{\sim}9\;F^2$ of DRAM cell. With 80 nm design rule using 193 nm ArF lithography, the maximum density is 72 Mbits at the most. Therefore, pseudo SRAM or 1 T SRAM, whose memory cell is the same as DRAM cell, is being adopted for the solution of the high density SRAM applications more than 64 M bits. However, the refresh time limits not only the maximum operation temperature but also nearly all critical electrical characteristics of the products such as stand_by current and random access time. In order to overcome both the size penalty of the conventional 6 T Full CMOS SRAM cell and the poor characteristics of the TFT load cell, we have developed S3 cell. The Load pMOS and the Pass nMOS on ILD have nearly single crystal silicon channel according to the TEM and electron diffraction pattern analysis. In this study, we present $S^3$ SRAM cell technology with 100 nm design rule in further detail, including the process integration and the basic characteristics of stacked single crystal silicon TFT.

• Korean Journal of Materials Research
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• v.12 no.6
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• pp.464-469
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• 2002

$SrBi_2Nb_2O_9(SBN)$ thin films were grown on Pt/Ti/Si and p-type Si(100) substrates by rf-magnetron co-sputtering method using two ceramic targets, $SrNb_2O_6\; and \;Bi_2O_3$. The structural and electrical characteristics have been investigated to confirm the possibility of the SBN thin films for the applications to destructive and nondestructive read out ferroelectric random access memory(FRAM). For the optimum growth condition X-ray diffraction patterns showed that SBN films had well crystallized Bi-layered perovskite structure after $700^{\circ}C$ heat-treatment in furnace. From this specimen we got remnant polarization $(2P_r)$ of about 6 uC/$\textrm{cm}^2$ and coercive voltage $(V_c)$ of about 1.5 V at an applied voltage of 5 V. The leakage current density was $7.6{\times}10^{-7}$/A/$\textrm{cm}^2$ at an applied voltage of 5V. And for the NDRO-FRAM application, properties of SBN films on Si substrate has been investigated. From transmission electron microscopy (TEM) analysis, we found the furnace treated sample had a native oxide about 2 times thicker than the RTA treated sample and this thick native oxide layer had a bad effect on C-V characteristics of SBN/Si thin film. After $650^{\circ}C$ RTA process, we got the improved memory window of 1.3 V at an applied voltage of 5 V.

• Korean Journal of Materials Research
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• v.14 no.11
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• pp.790-794
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• 2004

Ultra-fine Copper particles for a conductive paste in electric-electronic field were prepared using wet-reduction process with hydrazine hydrate ($N_{2}H_4{\cdot}H_{2}O$) as a reductor. The effect of reaction conditions such as the amount of dispersion ($Na_{4}O_{7}P_2{\cdot}10H_{2}O$) and reductor ($N_{2}H_4{\cdot}H_{2}O$) on the particle size and shape for the prepared Cu powders was investigated. The quantity of dispersion and reductor varied from 0 to 0.0025 M and from 5 to 40 ml at a reaction temperature of $70^{\circ}C$, respectively. The particle size, shape, and structure for the obtained Cu particles were characterized by means of XRD, SEM, TEM, EDS and TGA. The aggregation of Cu particles was reduced with relatively increasing of the amount of dispersion at fixed other reaction conditions. The smaller Cu particle with size of approximately 300nm was obtained from 0.032 M $CuSO_4$ with adding of 0.0025 M $Na_{4}O7P_2{\cdot}10H_{2}O$ and 40ml $N_{2}H_4{\cdot}H_{2}O$ at a reaction temperature of $70^{\circ}C$.

• Korean Journal of Materials Research
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• v.22 no.1
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• pp.16-23
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• 2012

Research into the development of high strength (1 GPa) and superior formability, such as total elongation (10%), and stretch-flangeability (50%) in hot-rolled steel was conducted with a thermomechanically controlled hot-rolling process. To improve the overall mechanical properties simultaneously, low-carbon steel using precipitation hardening of Ti-Nb-V multimicroalloying elements was employed. And, ideal microstructural characteristics for the realization of balanced mechanical properties were determined using SEM, EBSD, and TEM analyses. The developed steel, 0.06C-2.0Mn-0.5Cr-0.2(Ti + Nb + V), consisted of ferrite as the matrix phase and second phase of granular bainite with fine carbides (20-50 nm) in both phases. The significant factor of the microstructural characteristics that affect stretch-flangeability was found to be the microstructural homogeneity. The microstructural homogeneity, manifest in such characteristics as low localization of plastic strain and internally stored energy, was identified by grain average misorientation method, analyzed by electron backscattered diffraction (EBSD) and hardness deviation between the phases. In summar, a hot-rolled steel having a composition 0.06C-2.0Mn-0.5Cr-0.2(Ti + Nb + V) demonstrated a tensile strength of 998 MPa, a total elongation of 19%, and a hole expansion ratio of 65%. The most important factors to satisfy the mechanical property were the presence of fine carbides and the microstructural homogeneity, which provided low hardness deviation between the phases.

• Journal of Welding and Joining
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• v.13 no.4
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• pp.55-64
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• 1995

A study was made to examine the effects of postweld heat treatment(PWHT) on the toughness and microstructures in the weld heat affected zone(HAZ) of Cu-bearing HSLA-100 steel. The Gleeble thermal/mechanical simulator was used to simulate the weld HAZ. The details between toughness and PWHT of HAZ were studied by impact test, optical microscopy(O.M.), scanning electron microscopy (SEM), transmission electron microscopy(TEM) and differential scanning calorimetry(DSC). The decrease of HAZ toughness in single thermal cycle comparing to base plate is ascribed to the coarsed-grain formed by heating to 1350.deg.C. The increase of HAZ toughness in double thermal cycle comparine to single thermal cycle is due to the fine ferrite(.alpha.) grain transformed from austenite(.gamma.)formed by heating to .alpha./.gamma. two phase region. Cu precipitated during aging for increasing the strength of base metal is dissolved during single thermal cycle to 1350.deg.C and is precipitated little on cooling and heating during subsequent weld thermal cycle. It precipitates by introducing PWHT. Thus, the decrease of toughness in triple thermal cycle of $T_{p1}$ = 1350.deg.C, $T_{p2}$ = 800.deg.C and $T_{p3}$ = 500.deg.C does not occur owing to the precipitation of Cu. The behaviors of Cu=precipitates in HAZ is similar to that in base plate. PWHT at 550.deg.C shows highest hardness and lowest toughness, whereas PWHT at 650.deg.C shows reasonable toughness, which improves the toughness of as-welded state.state.