• Title/Summary/Keyword: TEM Journal

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Microstructural evolution of rheocast Al-6.2wt.%Si alloy with isothermal stirring (Al-6.2wt.%Si 합금의 등온교반시간에 따른 미세조직변화)

  • Lee, Jung-Ill;Park, Ji-Ho;Kim, Gyeung-Ho;Lee, Ho-In
    • Journal of Korea Foundry Society
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    • v.15 no.5
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    • pp.514-522
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    • 1995
  • The microstructural evolution with isothermal stirring during semi-solid state processing of hypoeutectic Al-6.2wt%Si alloy was studied. Substructure of the individual primary solid particle in the slurry was investigated through transmission electron microscopy(TEM). Formation of subgrain boundaries on the rheocast Al-6.2wt%Si alloy is observed and the misorientation between the grains is shown typically under 2 degrees by analyzing selected area diffraction (SAD) and convergent beam electron diffraction (CBED) patterns. The existence of high angle grain boundaries are also observed in the alloy. Based upon these observations, mechanisms for the primary particles fragmentation are considered. With isothermal stirring, the dislocation density increases, and the evolution of dislocation cell structure takes place, which is interpreted as a process of achieving uniform deformation by dynamic recovery under applied shear stress.

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The growth of ${Ce_{1-x}}{RE_x}{O_{2-y}}$ Thin Films by RF Magnetron Sputtering (RF Magnetron sputtering을 이용한 ${Ce_{1-x}}{RE_x}{O_{2-y}}$ 박막성장)

  • 주성민;김철진;박병규
    • Journal of the Korean Ceramic Society
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    • v.37 no.10
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    • pp.1014-1020
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    • 2000
  • RF 마크네트론 스퍼터법으로 Ce의 일부를 희토류 원소로 치환한 Ce$_{1-x}$RE$_{x}$O$_{2-y}$(0.1$\leq$x$\leq$0.4, RE=Y, Nd) 박막을 Si(111), $Al_2$O$_3$(1012) 기판 위에 1450~1$600^{\circ}C$로 소결한 target을 이용하여 성장시켰다. Ce$_{1-x}$RE$_{x}$O$_{2-y}$ 박막의 성장시 기판온도 및 증착시간 등을 변화시켜 성장시켰으며, 성장된 박막의 특성분석은 XRD, SEM, TEM으로 행하였다. 증착된 박막의 방향성 및 결정성장 거동은 증착온도 및 시간에 따라 차이를 보였다. Si(111) 기판 위에 증착된 Ce$_{1-x}$Y$_{x}$O$_{2-y}$(x=0.3) 박막의 경우, 80$0^{\circ}C$에 비해 7$50^{\circ}C$에서 증착 시간에 따른 (111) 우선배향성의 정도가 나은 결과를 보였으며, $Al_2$O$_3$(1012) 기판 위에 증착한 Ce$_{1-x}$Nd$_{x}$O$_{2-y}$(x=0.3) 박막 또는 (111) 우선배향성을 나타내었다.을 나타내었다.

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Temperature Dependence of the Deposition Behavior of Yttria-stabilized Zirconia CVD Films: Approach by Charged Cluster Model

  • Hwang, Nong-Moon;Jeon, In-Deok;Latifa Gueroudji;Kim, Doh-Yeon
    • Journal of the Korean Ceramic Society
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    • v.38 no.3
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    • pp.218-224
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    • 2001
  • Yttria-stabilized zirconia (YSZ) films were deposited with varying temperatures of ZrCl$_4$between 250~55$0^{\circ}C$ with YCl$_3$and the substrate at 100$0^{\circ}C$. Nanoamperes per square centimeter of the electric current were measured in the reactor during deposition and the current increased with increasing evaporation temperature of ZrCl$_4$. The zirconia nanometer size clusters were captured on the grid membrane near the substrate during the CVD process and observed by transmission electron microscopy (TEM). The deposition rate decreased with increasing evaporation temperature of ZrCl$_4$. A cauliflower-shaped structure was developed at 25$0^{\circ}C$ then gradually changed to a faceted-grain structure above 35$0^{\circ}C$. Dependence of the growth rate and the morphological evolution on the evaporation temperature of ZrCl$_4$was approached by the charged cluster model.

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Microstructure of $SrBi_2(Ta,Nb)_2O_9$ Thin Films on $SrTiO_3$(001) Single Crystal ($SrTiO_3$(001) 단결정 위에 제조된 $SrBi_2(Ta,Nb)_2O_9$ 박막의 미세구조)

  • 이지현
    • Journal of the Korean Ceramic Society
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    • v.37 no.10
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    • pp.1008-1013
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    • 2000
  • SrTi $O_3$(001) 단결정 기판 위에 졸-겔 스핀코팅으로 $SrBi_2(Ta,Nb)_2O_9$ 박막을 도포하고 그 결정화 과정을 고온 X-선 회절분석 (HTXRD)으로 추적하면서 Pt(111)/Ti/ $SiO_2$/Si 위에 성장한 박막과 비교하였다. SrTi $O_3$(001) 단결정 기판 위에 도포된 $SrBi_2Nb_2O_{9}$ 박막은 fluorite-like phase와 같은 transient phase를 거치지 않고 곧바로 순수한 $SrBi_2Nb_2O_9$ 상으로 결정화가 시작되었으며 결정화가 시작되는 온도인 ${\sim}540^{\circ}C$부터 c축 배향성장하였다. 또한 $SrB i_2(Ta,Nb)_2O_9$ 박막은 Ta/Nb 비에 관계없이 $SrTiO_3$(001) 위에서 모두 $(00{\ell})$로 배향되었으며, 코팅 횟수가 늘어나 필름의 두께가 증가함에 따라 c축 배향성은 미세한 감소를 보였다. $SrBi_2Nb_2O_9/SrTiO_3$단면을 TEM으로 관찰한 결과 $SrBi_2Nb_2O_9$은 대체로 불규칙한 크기의 다결정체로 되어 있었으나 계면 부근에서는 [001]$_{SBN}$//[001]$_{SrTi}$ $O_3$/, [100]$_{SBN}$//[100]$_{SrTi}$ $O_3$/라는 결정학적 관계를 가지며 에피탁샬 성장했음을 알 수 있었다.있었다.

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Preparation of the Titanium Dioxide-Phosphor Composite and its Photocatalytic Reaction under Visible Light (이산화티타늄-발광체 복합소재 제조 및 가시광선 광촉매 반응)

  • Park, Jin-Woo;Kim, Jung-Sik
    • Journal of the Korean Ceramic Society
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    • v.45 no.11
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    • pp.688-693
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    • 2008
  • This paper presents a study on the photocatalytic reaction about the composite particles of $TiO_2$-coated phosphors under visible light irradiation. Nanocrystalline titanium dioxide layers were directly coated on the alkaline earth aluminate phosphor, $CaAl_2O_4:Eu^{2+},\;Nd^{3+}$ particles by an sol-gel processing method. The photocatalytic reaction was analyzed with the degradation of methylene blue (MB) aqueous solution under UV and visible light irradiations. $TiO_2$-coated phosphor powders showed different photocatalytic mechanism, compared with pure $TiO_2$ (P-25, Degussa). Under UV-irradiation, $TiO_2$-coated phosphor powders showed slow photocatalytic reactivity in the early stage and fast in the latter, compared with that of pure $TiO_2$. However, $TiO_2$-coated phosphor powders showed much faster photocatalytic reactivity than that of pure $TiO_2$ under visible irradiation. In addition, the characterizations of the $TiO_2$-coated phosphor powders were conducted by a X-ray diffractometer (XRD), transmission electron microscope (TEM), and energy dispersive spectroscopy (EDS).

The Doping Effects of Intermediate Rare-earth Ions (Dy, Y and Ho) on BaTiO3 Ceramics (BaTiO3 세라믹 내 희토류(Dy, Y, Ho) 첨가 효과)

  • Park, Kum-Jin;Kim, Chang-Hoon;Kim, Young-Tae;Hur, Kang-Heon
    • Journal of the Korean Ceramic Society
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    • v.46 no.2
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    • pp.181-188
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    • 2009
  • The electrical property and microstructure in $BaTiO_3$ ceramics doped rare-earth ions with intermediate ionic size ($Dy^{3+},Ho^{3+},Y^{3+}$) were investigated. Microstructures have been characterized using scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD). Incorporation of rare-earth ions to $BaTiO_3$ ceramics depended on their ionic radius sensitively. Compared to Ho and Y ions, Dy ions provide $BaTiO_3$ ceramics with the high rate of densification and well-developed shell formation, due to their high solubility in the $BaTiO_3$ lattice, but the microstructure of Dy doped $BaTiO_3$ ceramics is unstable at high temperature, because Dy ions could not play a role of grain growth inhibition, leading to diffuse into $BaTiO_3$ lattice continuously after completion of densification during sintering. Comparing electrical property and microstructure, it is shown that the reliability of capacitor improved by high shell ratio.

Enhanced Hemolytic Biocompatibility of Hydroxyapatite by Chromium (Cr3+) Doping in Hydroxyapatite Nanoparticles Synthesized by Solution Combustion Method

  • Bandgar, Sneha S.;Yadav, Hemraj M.;Shirguppikar, Shailesh S.;Shinde, Mahesh A;Shejawal, Rajendra V.;Kolekar, Tanaji V.;Bamane, Sambhaji R.
    • Journal of the Korean Ceramic Society
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    • v.54 no.2
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    • pp.158-166
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    • 2017
  • For the better success of biomedical implant surgery, we used a modified solution combustion method to synthesize Hydroxyapatite (HA) and Chromium ($Cr^{3+}$) modified Cr-HA with different concentrations of 0.5, 1.0, 1.5, 2.0 and 2.5. The Cr-HA nanopowder was characterized by TGA, XRD, SEM-EDS and TEM. The HA and Cr-HA powders were subjected to in vitro biological studies to determine their biocompatibility and hemocompatibility. The cytotoxicity of HA and Cr-HA were evaluated on Hela (Cervical cancer) cells and L929 (mouse fibroblast) cells by using MTT assay. Hemocompatibility studies demonstrated a noticeable haemolytic ratio below 5%, which confirms that these materials are compatible in nature with human blood. The results of the present work confirm that the synthesised HA and Cr-HA are biocompatible and can be extensively used in the biomedical field to improve overall material biological properties.

Mechanical Properties of Cf/SiC Composite Using a Combined Process of Chemical Vapor Infiltration and Precursor Infiltration Pyrolysis

  • Kim, Kyung-Mi;Hahn, Yoonsoo;Lee, Sung-Min;Choi, Kyoon;Lee, Jong-Heun
    • Journal of the Korean Ceramic Society
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    • v.55 no.4
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    • pp.392-399
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    • 2018
  • $C_f/SiC$ composites were prepared via a process combining chemical vapor infiltration (CVI) and precursor infiltration pyrolysis (PIP), wherein silicon carbide matrices were infiltrated into 2.5D carbon preforms. The obtained composites exhibited porosities of 20 vol % and achieved strengths of 244 MPa in air at room temperature and 423 MPa at $1300^{\circ}C$ under an Ar atmosphere. Carbon fiber pull-out was rarely observed in the fractured surfaces, although intermediate layers of pyrolytic carbon of 150 nm thickness were deposited between the fiber and matrix. Fatigue fracture was observed after 1380 cycles under 45 MPa stress at $1000^{\circ}C$. The fractured samples were analyzed by transmission electron microscopy to observe the distributed phases.

A Stacked Polusilicon Structure by Nitridation in N2 Atmosphere for Nano-scale CMOSFETs (나노 CMOS 소자 적용을 위한 질소 분위기에서 형성된 질화막을 이용한 폴리실리콘 적층 구조)

  • Ho, Won-Joon;Lee, Hi-Deok
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.11
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    • pp.1001-1006
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    • 2005
  • A new fabrication method is proposed to form the stacked polysilicon gate by nitridation in $N_2$ atmosphere using conventional LP-CVD system. Two step stacked layers with an amorphous layer on top of a polycrystalline layer as well as three step stacked layers with polycrystalline films were fabricated using the proposed method. SIMS profile showed that the proposed method would successfully create the nitrogen-rich layers between the stacked polysilicon layers, thus resulting in effective retardation of dopant diffusion. It was observed that the dopants in stacked films were piled-up at the interface. TEM image also showed clear distinction of stacked layers, their plane grain size and grain mismatch at interface layers. Therefore, the number of stacked polysilicon layers with different crystalline structures, interface position and crystal phase can be easily controlled to improve the device performance and reliability without any negative effects in nano-scale CMOSFETs.

Field Emission Characteristics and Growth Analysis of Carbon Nanotubes by Plasma-enhanced Chemical Vapor Deposition (플라즈마 화학 기상 증착법을 이용한 탄소나노튜브의 성장 분석 및 전계방출 특성)

  • 오정근;주병권;김남수
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.12S
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    • pp.1248-1254
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    • 2003
  • Carbon nanotubes(CNTs) are grown by using Co catalyst metal. CNTs fabricated by PECVD(plasma enhanced chemical vapor deposition) method are studied in terms of surface reaction and surface structure by TEM and Raman analysing method and ate analysed in its electrical field emission characteristics with variation of space between anode and cathode. Acetylene(C$_2$H$_2$) gas is used as the carbon source, while ammonia and hydrogen gas are used as catalyst and dilution gas. The CNTs grown by hydrogen(H$_2$) gas plasma indicates better vortical alignment, lower temperature process, and longer tip, compared to that grown by ammonia(NH$_3$) gas plasma. The CNTs fabricated with Co(cobalt) catalyst metal and PECVD method show the multiwall structure in mid-circle type in tip-end and the inner vacancy of 10nm. Emission properties of CNTs indicate the turn-on field to be 2.6 V/${\mu}{\textrm}{m}$ We suggest that CNTs can be possibly applied to the emitter tip of FEDs and high brightness flat lamp because of low temperature CNTs growth, low turn-on field.