• Title/Summary/Keyword: TEM Journal

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Microstructures and Grain Stabilities of Mg-Zn-(Zr) Alloys (Mg-Zn-(Zr) 합금의 미세조직과 결정립의 안정성)

  • Jun, Joong-Hwan
    • Journal of the Korean Society for Heat Treatment
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    • v.23 no.6
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    • pp.309-314
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    • 2010
  • Microstructures and grain growth behaviors at elevated temperatures have been investigated for extruded Mg-2%Zn and Mg-2%Zn-0.3%Zr alloys, in order to clarify the role of Zr in grain stability of Mg-Zn alloy. The grain size of Zr-free alloy increased continuously with an increase in annealing temperature, when isochronally annealed for 60 min from 573 to 723K, while the grains of the Zr-containing alloy were relatively stable up to 723 K. The activation energies for grain growth ($E_g$) between 573 and 723 K were calculated as 77.8 and 118.6 kJ/mole for the Mg-2%Zn and Mg-2%Zn-0.3%Zr alloys, respectively, which indicates that grains in the Zr-added alloy possess higher thermal stabilities at elevated temperatures. TEM observations on the annealed Mg-2%Zn and Mg-2%Zn-0.3%Zr alloys revealed that enhanced grain stability resulting from Zr addition into Mg-Zn alloy would be ascribed to the restriction of grain growth by stable Zn-Zr nano-precipitates distributed in the microstructure.

A Study on the Precipitation Behavior of $L2_1$-type $Ni_2AlTi$ Phase in B2-Ordered NiAl System (B2-규칙 NiAl계에 $L2_1$$Ni_2AlTi$상의 석출거동에 관한 연구)

  • Han, Chang-Suk
    • Journal of the Korean Society for Heat Treatment
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    • v.20 no.4
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    • pp.187-194
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    • 2007
  • A transmission electron microscope (TEM) investigation has been performed on the precipitation of $L2_1$-type $Ni_2AlTi$ phase in B2-ordered NiAl system. The hardness after solution treatment is high in NiAl-Ti alloys suggesting the large contribution of solid solution strengthening in this alloy system. However, the amount of age hardening is not large as compared to the large microstructural variations during aging. At the beginning of aging, the $L2_1$-type $Ni_2AlTi$ precipitates keep a lattice coherency with the NiAl matrix. By longer periods of aging $Ni_2AlTi$ precipitates lose their coherency and change their morphology to the globular ones surrounded by misfit dislocations. Misfit dislocations, which are observed on {100} planes of H-precipitates have the Burgers vector of a <100> with a pure edge type. The lattice misfits of NiAl-$Ni_2AlTi$ system is estimated from the spacings of misfit dislocations to be 1.1% at 1273 K. The lattice misfits decrease with increasing aging temperature in this system.

First record of a marine microalgal species, Jaagichlorella roystonensis (Trebouxiophyceae) isolated from Jungmun Saekdal Beach, Jeju Island, Korea

  • Jo, Seung-Woo;Kang, Nam Seon;Lee, Jung A;Kim, Kyeong Mi;Jang, Hyeong Seok;Yoon, Moongeun;Hong, Ji Won;Yoon, Ho-Sung
    • Korean Journal of Environmental Biology
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    • v.38 no.2
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    • pp.216-221
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    • 2020
  • A eukaryotic marine microalga was isolated from Jungmun Saekdal Beach, Jeju Island, Korea and an integrated approach, including molecular phylogeny and morphology, was used to determine its taxonomical status. Molecular phylogenetic evidence inferred from the small subunit (SSU) 18S rRNA sequence and internal transcribed spacer (ITS) secondary structure analysis clearly showed that the isolate belonged to the recently described species, Jaagichlorella roystonensis. Distinctive morphological keys of the species were also observed by light microscopy and scanning/transmission electron microscopy(S/TEM). In this study, a Korean marine J. roystonensis species was described for the first time and was subsequently added to the national culture collections in Korea.

Inhibitory Effects of Extract of Rosae Rugosae Flos on the Acetylcholinesterase, β-secretase, and β-amyloid Aggregation (매괴화(玫瑰花) 추출물의 아세틸콜린에스테라제, 베타 시크리타제 및 베타 아밀로이드 응집에 대한 저해효과)

  • Kim, Hyo Shin;Kim, Ju Eun;Leem, Jae-Yoon
    • Journal of Physiology & Pathology in Korean Medicine
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    • v.30 no.1
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    • pp.33-39
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    • 2016
  • Alzheimer's disease(AD), one of the most common forms of dementia, is characterized pathologically by the presence of intracellular neurofibrillary tangles and deposition of β-amyloid(Aβ) peptides of 40-42 residues. Aβ has been believed to be neurotoxic and now is also considered to have a role on the mechanism of memory dysfunction. Only a few acetylcholinesterase(AChE) inhibitors have been developed for treatment of AD, although the numbers of patients are rapidly increasing within aging society. Here, we show that ethanol extract of Rosae Rugosae Flos(RR) or its butanol fraction reduce the enzyme activity of AChE and BACE1(β-site APP cleaving enzyme 1). Furthermore, We found that RR inhibits Aβ aggregation and removes Aβ aggregates by Transmission electron microscopy(TEM). In addition, RR reduces the free radical of 2, 2-diphenyl-1-picrylhydrazyl(DPPH). We suggest that Rosae Rugosae Flos may be useful as a herbal medicine to treat AD.

Microstructures and Mechanical Properties of Pressureless and Spark Plasma Sintered ZrO2(3 mol%Y2O3) Bodies

  • Shin, Na-Young;Han, Jae-Kil;Lee, Hae-Hyoung;Lee, Byong-Taek
    • Journal of the Korean Ceramic Society
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    • v.42 no.2 s.273
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    • pp.140-144
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    • 2005
  • The microstructures and mechanical properties of Tetragonal Zirconia Polycrystals (TZP) sintered bodies, which made by pressureless and spark plasma sintering techniques, were investigated using XRD, SEM, and TEM techniques. In the spark plasma sintered samples, the TZP grains were equiaxed type including many sub-grain boundaries regardless of sintering conditions. The biaxial strength of TZP having an average of 80 nm grains in diameter was high in value with 1025 MPa, but fracture toughness showed a low value due to the absence of a fracture toughening mechanism such as transformation toughening. In the Pressureless Sintered (PLSed) samples, the grain size of TZP was strongly dependent on the sintering temperature; i.e., it gradually increased as the sintering temperature increased. The value of fracture toughness increased as the grain size increased by the stress-induced phase transformation and Borne crack deflection.

Characterization of Mechanical Alloying Processed Ti-Si-B Nanocomposite Consolidated by Spark Plasma Sintering

  • Lee, Hyung-Bock;Kwon, In-Jong;Lee, Hyung-Jik;Han, Young-Hwan
    • Journal of the Korean Ceramic Society
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    • v.45 no.12
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    • pp.815-820
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    • 2008
  • The microstructure and mechanical properties of $TiB_2/Si$ nanocomposites based on the Ti-Si-B system, consolidated by spark plasma sintering of mechanically alloyed activated nanopowders, have been characterized. Mechanical Alloying was carried out in a planetary ball mill for 180 min with 350 rev $min^{-1}$. The powders were pressed in vacuum at a pressure of 60 MPa, generating a maximum temperature in the graphite mould of $1400^{\circ}C$. Analysis of the synthesized nanocomposites by SEM, XRD and TEM showed them to consist of $TiB_2$ second phase, sub-micron in size, with no third phase. Composites consolidated from powders mechanically alloyed from an initial elemental powder mix of 0.3 mol Si, 0.7 mol Ti, and 2.0 mol B achieved the best relative density (97%) and bending strength (774 MPa); the highest Vickers hardness of 14.7 GPa was achieved for the 0.1-0.9-2.0 mol starting composition.

Synthesis of High Purity Aluminum Nitride Nanopowder in Ammonia and Nitrogen Atmosphere by RF Induction Thermal Plasma (RF 유도결합 열 플라즈마를 이용한 암모니아와 질소분위기에서 고순도 AlN 나노 분말의 합성)

  • Kim, Kyung-In;Choi, Sung-Churl;Kim, Jin-Ho;Hwang, Kwang-Taek;Han, Kyu-Sung
    • Journal of the Korean Ceramic Society
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    • v.51 no.3
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    • pp.201-207
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    • 2014
  • High-purity aluminum nitride nanopowders were synthesized using an RF induction thermal plasma instrument. Ammonia and nitrogen gases were used as sheath gas to control the reactor atmosphere. Synthesized AlN nanopowders were characterized by XRD, SEM, TEM, EDS, BET, FTIR, and N-O analyses. It was possible to synthesize high-purity AlN nanoparticles through control of the ammonia gas flow rate. However, additional process parameters such as plasma power and reactor pressure had to be controlled for the production of high-purity AlN nanopowders using nitrogen gas.

A Design Database for High Speed IC Package Interconnection (고속 집적회로 패키지 인터커넥션을 위한 설계 데이타베이스)

  • ;;;F. Szidarovszki;O.A.Palusinski
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.32A no.12
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    • pp.184-197
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    • 1995
  • In this paper, high speed IC package-to-package interconnections are modeled as lossless multiconductor transmission lines operating in the TEM mode. And, three mathematical algorithms for computing electrical parameters of the lossless multiconductor transmission lines are described. A semi-analytic Green's function method is used in computing per unit length capacitance and inductance matrices, a matrix square root algorithm based on the QR algorithm is used in computing a characteristic impedance matrix, and a matrix algorithm based on the theory of M-matrix is used in computing a diagonally matched load impedance matrix. These algorithms are implemented in a computer program DIME (DIagonally Matched Load Impedance Extractor) which computes electrical parameters of the lossless multiconductor transmission lines. Also, to illustrate the concept of design database for high speed IC package-to-package interconnection, a database for the multi conductor strip transmission lines system is constructed. This database is constructed with a sufficiently small number of nodes using the multi-dimensional cubic spline interpolation algorithm. The maximum interpolation error for diagonally matched load impedance matrix extraction from the database is 1.3 %.

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Hydrogen Ion Implantation Mechanism in GaAs-on-insulator Wafer Formation by Ion-cut Process

  • Woo, Hyung-Joo;Choi, Han-Woo;Kim, Joon-Kon
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.6 no.2
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    • pp.95-100
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    • 2006
  • The GaAs-on-insulator (GOI) wafer fabrication technique has been developed by using ion-cut process, based on hydrogen ion implantation and wafer direct bonding techniques. The hydrogen ion implantation condition for the ion-cut process in GaAs and the associated implantation mechanism have been investigated in this paper. Depth distribution of hydrogen atoms and the corresponding lattice disorder in (100) GaAs wafers produced by 40 keV hydrogen ion implantation were studied by SIMS and RBS/channeling analysis, respectively. In addition, the formation of platelets in the as-implanted GaAs and their microscopic evolution with annealing in the damaged layer was also studied by cross-sectional TEM analysis. The influence of the ion fluence, the implantation temperature and subsequent annealing on blistering and/or flaking was studied, and the optimum conditions for achieving blistering/splitting only after post-implantation annealing were determined. It was found that the new optimum implant temperature window for the GaAs ion-cut lie in $120{\sim}160^{\circ}C$, which is markedly lower than the previously reported window probably due to the inaccuracy in temperature measurement in most of the other implanters.

Property Changes of Europium-Silicate Thin Films depending on the Ambient Gas (열처리 분위기에 따른 유로퓸 실리케이트 박막의 특성 변화)

  • Kim, Eun-Hong;Shin, Young-Chul;Leem, Si-Jong;Hahn, Cheol-Koo;Kim, Tae-Geun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.3
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    • pp.263-267
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    • 2007
  • We investigate the influence of the ambient gas during thermal annealing on the photoluminescence (PL) properties of europium-silicate thin films. The films were fabricated on substrates by using a radio-frequency magnetron sputtering method and subsequent rapid thermal annealing (RTA). The mechanism for the formation of the europium silicates during the annealing process was investigated by using X-ray diffraction (XRD) spectroscopy, Auger electron spectroscopy (AES) and transmission electron microscopy (TEM). A series of narrow PL spectra from $Eu^{3+}$ ions was observed from the film annealed in $O_2$ ambient. Broad PL spectra associated with $Eu^{2+}$ ions, with a maximum intensity at 600 nm and a FWHM of 110 nm, were observed from the thin film annealed at $1000^{\circ}C$ in $N_2$ ambient.