• Title/Summary/Keyword: TEM Journal

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The Morphology and Crystallography of Isothermal Martensite in Yttria Stabilized Zirconia

  • Pee, Jae-Hwan;Choi, Eui-Seok;Hayakawa, Motozo
    • Journal of the Korean Ceramic Society
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    • v.43 no.2 s.285
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    • pp.69-73
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    • 2006
  • A full retention of the tetragonal phase with coarse grains $(50\~60\;{\mu}m)$ was possible with the specimen $ZrO_2-1.9\;mol\%\;Y_2O_3$. In these coarse grains, $\{101\}_t$ annealing twins were frequently observed, although they do not exist in the usual fine grained specimens. The morphology and growth rate of the isothermally formed individual products are studied at an optical microscopic level. The habit planes of both products are also identified by performing two-surface trace analysis on the grains whose orientations are determined by the Electron Back Scattering Pattern (EBSP) method. The morphologies of isothermal martensite were well-defined thin plates and lenticular types. The growth rate in their longitudinal directions was quite slow and temperature-dependent. A two-surface trace analysis, incorporated with the EBSP method, identified the habit planes near $\{013\}_c$, in agreement with previous reports obtained from TEM works.

Stability of Sputtered Hf-Silicate Films in Poly Si/Hf-Silicate Gate Stack Under the Chemical Vapor Deposition of Poly Si and by Annealing

  • Kang, Sung-Kwan;Sinclair, Robert;Ko, Dae-Hong
    • Journal of the Korean Ceramic Society
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    • v.41 no.9
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    • pp.637-641
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    • 2004
  • We investigated the effects of SiH$_4$ gas on the surface of Hf-silicate films during the deposition of polycrystalline (poly) Si films and the thermal stability of sputtered Hf-silicate films in poly Si/Hf-silicate structure by using High Resolution Transmission Electron Microscopy (HR-TEM) and X-ray Photoelectron Spectroscopy (XPS). Hf-silicate films were deposited by using DC-mag-netron sputtering with Hf target and Si target and poly Si films were deposited at 600$^{\circ}C$ by using Low Pressure Chemical Vapor Deposition (LPCVD) with SiH$_4$ gas. After poly Si film deposition at 600$^{\circ}C$, Hf silicide layer was observed between poly Si and Hf-silicate films due to the reaction between active SiH$_4$ gas and Hf-silicate films. After annealing at 900$^{\circ}C$, Hf silicide, formed during the deposition of poly Si, changed to Hf-silicate and the phase separation of the silicate was not observed. In addition, the Hf-silicate films remain amorphous phase.

A Study on the Ceria Stabilized Tetragonal Zirconia Polycrystals(Ce-TZP)(III) : Effect of Al2O3 Addition on the Mechanical Properities and Microstructures of Ce-TZP (CeO2안정화 정방정 Zirconia 다결정체(Ce-TZP)에 관한 연구(III) : Ce-TZP의 기계적성질 및 미세조직에 미치는 Al2O3첨가의 영향)

  • 김문일;박정현;강대석;문성환;안계원
    • Journal of the Korean Ceramic Society
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    • v.27 no.1
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    • pp.55-61
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    • 1990
  • Effect of Al2O3 addition on the mechanical properties and microstructure of Ce-TZP were studied. 12, 14, 16Ce-TZP containing 0-40wt% Al2O3 were prepared by sintering at 155$0^{\circ}C$ for 2h. in air. Density, linear shrinkage, bending strength, Vickers hardness, microstructuer and the amount of stress induced phase transformation were examined. Vickers hardness increased linearly with increasing amounts of Al2O3. The amount of transformation and fracture toughness decreased linearly with increasing amount of Al2O3. Linear shrinkage and relative density decreased with increasing Al2O3 content in all composition of Ce-TZP. Grain growth of Ce-TZP was inhibited by Al2O3 dispersion and fracture mode of Ce-TZP/Al2O3 composites transformed from intergranular to transgranular fracture as the amount of Al2O3 increased. TEM observation revealed that Al2O3 particles were located mainly at grain boundaries of ZrO2.

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A Study on the Ceria Stabilized Tetragonal Zirconia Polycrystals(Ce-TZP)(I) : Effect of CeO2 Content on the Mechanical Properties and Fracture Behavior of Ce-TZP (CeO2 안정화 정방정 Zirconia 다결정체(Ce-TZP)에 관한 연구(I) : CeO2 함량에 따른 Ce-TZP의 기계적 성질과 파괴거동의 변화)

  • 김문일;박정현;강대석;문성환
    • Journal of the Korean Ceramic Society
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    • v.26 no.5
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    • pp.719-727
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    • 1989
  • By using commercial zirconia powder CeO2-ZrO2 ceramics containing 8~16mol% CeO2 was made by heat treatment at 1350~155$0^{\circ}C$ for 1~10hr. The minimum amount of CeO2 for obtaining complete tetragonal phase was 12mol%, and in the tetragonal phase region fracture toughness of Ce-TZP was decreased with increasing CeO2 content and the maximum value was obtained when 12mol% CeO2 was added. The bending strength goes through maximum at 14mol% CeO2. Fracture mode of Ce-TZP transformed from intergranular to transgranular fracture with increasing CeO2 content, so the morphology of fracture surface of 16mol% Ce-TZP was wholly transgranular and this tendency was independent on grain size. The crystal structure of the 12mol% Ce-TZP was monoclinic with fringes along the grain boundaries which are lying in the particular plane from the TEM observation. The chemical composition of the sintered body was homogeneous as a whole and some amorphism or air pocket was observed at the triple junction.

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Synthesis of hollow Sphere CdSe in PVA Aqueous Solution by Using Ultrasonic Irradiation (PVA 함유 수용액으로부터 초음파 조사에 의한 CdSe 중공 입자의 합성)

  • Park, Myoung-Guk;Lee, Yoon-Bok;Kim, Yong-Jin;Kim, In-Bae;Kim, Yang-Do
    • Journal of the Korean Ceramic Society
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    • v.44 no.2 s.297
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    • pp.84-88
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    • 2007
  • CdSe hollow spheres with the diameter of about 30-50 nm were synthesized after ultrasonic irradiation in the presence of $Cd(NO_3)_2,\;Na_2SeSO_3$, and polyvinylalcohol(PVA). The characteristics of CdSe hollow spheres were analyzed using X-ray diffraction(XRD), transmission electron microscopy(TEM), UV-vis measurement and PL spectrometer. The characteristics of solvent as water and water-1-propanol mixture in the system played important roles on the controlled synthesis of hollow sphere. Based on the observation of morphological difference of CdSe, the possible mechanism of CdSe hollow sphere formation will be discussed.

Growth of polycrystalline 3C-SiC thin films for M/NEMS applications by CVD (CVD에 의한 M/NEMS용 다결정 3C-SiC 박막 성장)

  • Chung, Gwiy-Sang;Kim, Kang-San;Jeong, Jun-Ho
    • Journal of Sensor Science and Technology
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    • v.16 no.2
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    • pp.85-90
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    • 2007
  • This paper presents the growth conditions and characteristics of polycrystalline 3C-SiC (silicon carbide) thin films for M/NEMS applications related to harsh environments. The growth of the 3C-SiC thin film on the oxided Si wafers was carried out by APCVD using HMDS (hexamethyildisilane: $Si_{2}(CH_{3})_{6})$ precursor. Each samples were analyzed by XRD (X-ray diffraction), FT-IR (fourier transformation infrared spectroscopy), RHEED (reflection high energy electron diffraction), GDS (glow discharge spectrometer), XPS (X-ray photoelectron spectroscopy), SEM (scanning electron microscope) and TEM (tunneling electro microscope). Moreover, the electrical properties of the grown 3C-SiC thin film were evaluated by Hall effect. From these results, the grown 3C-SiC thin film is very good crystalline quality, surface like mirror and low defect. Therefore, the 3C-SiC thin film is suitable for extreme environment, Bio and RF M/NEMS applications in conjunction with Si fabrication technology.

The Surface Modification and Low Cycle Fatigue Behavior of N+ion Implantated 7050Al Alloy (질소 이온 주입시킨 7050Al합금의 표면 미세구조 변화와 저주기 피로거동)

  • Lee, C.W.;Kwun, S.I.
    • Journal of the Korean Society for Heat Treatment
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    • v.7 no.4
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    • pp.307-317
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    • 1994
  • The surf ace microstructure modification by $N^+$ ion implantation into 7050Al alloy and its low cycle fatigue behavior were investigated. Ion implantation method is to physically implant accelerated ions to the surface of a substrate. High dose of nitrogen($5{\times}10^{17}ions/cm^2$) were implanted into 7050Al alloy using current density of accellerating voltage of 100KeV. The implanted layers were characterized by Electron Probe-Micro Analysis(EPMA), Auger Elecron Spectroscopy(AES), X-Ray Diffraction(XRD), X-Ray Photoelectron Spectroscopy(XPS), and Transmission Electron Microscopy(TEM). The experimental results were compared with computer simulation data. It was shown that AlN was formed to 4500 ${\AA}$ deep. The low cycle fatigue life of the $N^4$ion modified material was prolonged by about three times the unimplanted one. The improved low cycle fatigue life was attributed to the formation of AlN and the damaged region on the surface by $N^+$ ion implantation.

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Effect of Mn Addition on Rolling Contact Fatigue of C-Base Induction Hardened Bearing Steels (C계 유도경화 베어링강의 회전접촉 피로거동에 미치는 Mn 첨가의 영향)

  • Jung, Kyung-Jo;Yoon, Kee-Bong;Choi, Byung-Young
    • Journal of the Korean Society for Heat Treatment
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    • v.8 no.3
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    • pp.205-212
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    • 1995
  • Effect of Mn addition on rolling contact fatigue of C-base induction hardened bearing steels has been investigated to develop inexpensive surface-hardened bearing steels with improved resistance to rolling contact fatigue. Fatigue tests were conducted in elasto-hydrodynamic lubricating conditions at a shaft speed of 5,000rpm, under max. Hertzian stress of $492kg/mm^2$. It was found in the C-Mn steels that effective depth of induction hardened layer and amount of retained austenite were slightly increased in comparison with those of C-base steels. finer interlamellar spacing of pearlite in the C-Mn steels was also observed using TEM. Decomposition of retained austenite during rolling contact fatigue was smaller in quantity in the C-Mn steels than C-base steels. This might be associated with enhanced mechanical stability of retained austenite with addition of Mn. Statistical analysis of fatigue life for C-Mn steels using Weibull distribution indicated that improved resistance to rolling contact fatigue was mainly attributed to transformation induced plasticity and mechanical stability of retained austenite.

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A Study on the Crystallization Behavior of Al85Ce5Ni10 Amorphous Ribbon (Al85Ce5Ni10 비정질 리본의 결정화 거동에 관한 연구)

  • Moon, J.T.;Jo, W.M.;Shin, B.M.;Lee, Y.H.
    • Journal of the Korean Society for Heat Treatment
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    • v.8 no.3
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    • pp.236-243
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    • 1995
  • Since amorphous alloys have been known to have better mechanical and chemical properties than crystalline alloys of the same composition, a great number of studies on the formation of Al-based amorphous alloys have been carried out actively. However, little has been obtained about the effect of Rare-Earth metal and Transition metal addition on amorphous phase formed by melt spinning method. This study included fabrication of amorphous alloy $Al_{85}Ce_5Ni_{10}$ by melt spinning methods and DTA, XRD, TEM analysis to determine crystalization behavoir. Annealing treatments were carried out in Ar atmosphere under isothermal and nonisothermal conditions. The diffraction pattern of non-heated ribbons showed broad form characteristic of glass metallic alloy. The crystallization of amorphous $Al_{85}Ce_5Ni_{10}$ takes place eutedtoidly by homogeneous formation of Al and MS-1, followed by precipitation of the $Al_{11}Ce_3$ and later $MS-1{\rightarrow}Al_3Ni$ transformation.

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A Study on the Characterization of Ni-C Thin Films Utilizing a Dual-Source Deposition System (듀얼 소스 증착장치를 이용한 Ni-C 박막의 특성에 관한 연구)

  • Han, Chang-Suk;Chun, Chang-Hwan;Han, Seung-Oh
    • Journal of the Korean Society for Heat Treatment
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    • v.21 no.5
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    • pp.235-243
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    • 2008
  • Ni-C composite films were prepared using a combination of microwave plasma CVD and ion beam sputtering deposition working in a codeposition way. The structure of these films was characterized by energy-dispersive X-ray diffraction (EDXRD), transmission electron microscopy (TEM) and Raman spectroscopy. It was found that a nickel carbide phase, $Ni_3C$ (hcp), formed as very fine crystallites over a wide temperature range when Ni-C films were deposited at low $CH_4$ flow rates. The thermal stability of this nonequilibrium carbide $Ni_3C$ was also studied. As a result, the $Ni_3C$ carbide was found to decompose into nickel and graphite at around $400^{\circ}C$. With high $CH_4$ flow rates (> 0.2 sccm), the structure of the Ni-C films became amorphous. The formation behavior of the carbide and amorphous Ni-C phases are discussed in relation to the electrical resistivity of the films.