• Title/Summary/Keyword: TE4

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Epidemiological characteristics of Salmonella spp. isolated from different stages of commercial swine farms

  • Suh, Dong Kyun;Jung, Suk Chan
    • Korean Journal of Veterinary Research
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    • v.45 no.2
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    • pp.179-183
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    • 2005
  • Epidemiological characteristics of a total of 48 swine herd with diarrhea or a history of diarrhea in Gyeongsang-do between 1999 and 2000 were performed to evaluate the prevalence of Salmonella spp., their serotypes and antibiotic resistance patterns with respect to the different stages of swine production system. A total of 139 Salmonella spp. (21%) were isolated from 662 fecal samples and the overall herd prevalence of Salmonella spp. ranged from 12.5% to 88%. The average prevalence of Salmonella spp. from swine stages of suckling/nursery, grow/finisher and sow stage were 25.7%, 19.2% and 18.4%, respectively. Ten serotypes of Salmonella spp. were identified with a predominance of S. Typhimurium, S. Derby and S. Agona. Twenty-five isolates (18%) were found to be untypable. One hundred and two Salmonella isolates (73.4%) resistant to more than 1 antibiotic were characterized by 24 diverse resistance patterns, and their frequency of antibiotic resistance was highest in grow/finisher stage (83.3%). Resistance to tetracycline (TE; 67.6%), sulfamethoxazole (SU; 46.8%) and streptomycin (ST; 28%) was most common and the most common resistance patterns were TE SU (31.4%), TE (21.6%) and TE SU ST (20.6%) in order.

Similarity analysis of pixelated CdTe semiconductor gamma camera image using a quadrant bar phantom for nuclear medicine: Monte Carlo simulation study

  • Park, Chan Rok;Kang, Seong-Hyeon;Lee, Youngjin
    • Nuclear Engineering and Technology
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    • v.53 no.6
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    • pp.1947-1954
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    • 2021
  • In the nuclear medicine imaging, quality control (QC) process using quadrant bar phantom is fundamental aspect of evaluating the spatial resolution. In addition, QC process of gamma camera is performed by daily or weekly. Recently, Monte Carlo simulation using the Geant4 application for tomographic emission (GATE) is widely applied in the pre-clinical nuclear medicine field for modeling gamma cameras with pixelated cadmium telluride (CdTe) semiconductor detector. In this study, we modeled a pixelated CdTe semiconductor detector and quadrant bar phantom (0.5, 1.0, 1.5, and 2.0 mm bar thicknesses) using the GATE tool. Similarity analysis based on correlation coefficients and peak signal-to-noise ratios was performed to compare image qualities for various source to collimator distances (0, 2, 4, 6, and 8 cm) and collimator lengths (0.2, 0.4, 0.6, 0.8, and 1.0 cm). To this end, we selected reference images based on collimator length and source to collimator distance settings. The results demonstrate that as the collimator length increases and the source to collimator distance decreases, the similarity to reference images improves. Therefore, our simulation results represent valuable information for the modeling of CdTe-based semiconductor gamma imaging systems and QC phantoms in the field of nuclear medicine.

Preparation of Bismuth Telluride Thin Films using RF magnetron sputtering and Study on Their Thermoelectric Properties (RF 마그네트론 스퍼터링을 이용한 Bismuth Telluride 박막의 제조와 그 열전 특성 연구)

  • Kim, Dong-Ho;Lee, Gun-Hwan
    • Journal of the Korean Vacuum Society
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    • v.14 no.4
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    • pp.215-221
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    • 2005
  • Thermoelectric bismuth telluride thin films were prepared on $SiO_{2}$/Si substrate with co-sputtering of bismuth and tellurium targets. The effects of deposition temperature on surface morphology, crystallinity and electrical transport properties were investigated. Hexagonal crystallites were clearly visible at the surface of films deposited above $290 ^{\circ}C$. Change of dominant phase from rhombohedral $Bi_2Te_3$ to hexagonal BiTe was confirmed with X-ray diffraction analysis. The deviation from stoichiometric composition at high deposition temperature resulted in the change of structural and electrical characteristics. Seebeck coefficients of all samples have negative value, indicating the prepared $Bi_XTe_Y$ films are n-type thermoelectric. Optimum of Seebeck coefficient and power factor were obtained at the deposition temperature of $225 \^{circ}$C (about -55 $\mu$V/K and $3\times10^{-4}$ W/$k^{2}$m, respectively). Deterioration of thermoelectric properties at higher temperature.

Improvement of $^{4}I_{11/2}{\to}^{4}I_{13/2}$ Transition Rate and Thermal Stabilities in $Er^{3+}-Doped\;TeO_2-B_2O_3\;(GeO_2)-ZnO-K_2O$ Glasses

  • Cho, Doo-Hee;Choi, Yong-Gyu;Kim, Kyong-Hon
    • ETRI Journal
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    • v.23 no.4
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    • pp.151-157
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    • 2001
  • Spectroscopic and thermal analysis indicates that tellurite glasses doped with $B_2O_3$ and $GeO_2$ are promising candidate host materials for wide-band erbium doped fiber amplifier (EDFA) with a high 980 nm pump efficiency. In this study, we measured the thermal stabilities and the emission cross-sections for $Er^{3+}:^{4}I_{13/2}\;{\to}\;^{4}I_{15/2}$ transition in this tellurite glass system. We also determined the Judd-Ofelt parameters and calculated the radiative transition rates and the multiphonon relaxation rates in this glass system. The 15 mol% substitution of $B_2O_3$ for $TeO_2$ in the $Er^{3+}-doped\;75TeO_2-20ZnO-5K_2O$ glass raised the multiphonon relaxation rate for $^4I_{11/2}\;{\to}\;^4I_{13/2}$ transition from 4960 $s^{-1}$ to 24700 $s^{-1}$, but shortened the lifetime of the $^4I_{13/2}$ level by 14 % and reduced the emission cross-section for the $^4I_{13/2}\;{\to}\;^4I_{15/2}$ transition by 11%. The 15 mol% $GeO_2$ substitution in the same glass system also reduced the emission cross-section but increased the lifetime by 7%. However, the multiphonon relaxation rate for $^4I_{11/2}{\to}^4I_{13/2}$ transition was raised merely by 1000 $s^{-1}$. Therefore, a mixed substitution of $B_2O_3$ and $GeO_2$ for $TeO_2$ was concluded to be suitable for the 980 nm pump efficiency and the fluorescence efficiency of $^4I_{13/2}{\to}^4I_{15/2}$ transition in $Er^{3+}-doped$ tellurite glasses.

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원형도파관을 이용한 Ku-band BPF 설계

  • Jeon, Hyeong-Jun;Gang, Chang-Su
    • Proceedings of the IEEK Conference
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    • 2005.11a
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    • pp.1273-1278
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    • 2005
  • In this thesis, a 2 stage 6-pole bandpass filter(BPF) is designed and implemented by using triple-mode cavity for satellite payload system. The BPF has a 100MHz bandwidth at the center frequency of 14.5GHz(Ku-band) and the response of the filter is the Chebyshev function. The cavity filter uses two orthogonal $TE_{113}$ modes and one $TM_{012}$ mode. The coupling between the adjacent cavityes(intercavity coupling) results in a Chebyshev response and is accomplished by only H-filed component of TE modes. The size and location of intercavity slot is determined by the coupling equation from E- and H-field of TE and TM resonant modes in circular cavity. The 2-stage 6-pole triple-mode cavity BPF has the insertion loss of 2.4dB and the reflection loss of 15dB in the passband. The triple-mode BPF proposed in this thesis can be used as channel filters for satellite payload system and can minimize filter assembly in general wireless communication system.

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Ordering of manganese spins in photoconducting $Zn_{1-x}Mn_xTe$

  • Kajitani, T.;Kamiya, T.;Sato, K.;Shamoto, S.;Ono, Y.;Sato, T.;Oka, Y.
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1998.06a
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    • pp.39-43
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    • 1998
  • Single crystals of{{{{ { Zn}_{ 1-x} {Mn }_{x }{Te} }}}} with x=0.3-0.6 were prepared by the standard Bridgeman method. Diffuse neutron diffraction intensities due to the short range magnetic ordering is found in the vicinities of 1 1/2 0 reciprocal point and its equivalent point, indicating that the magnetic correlation of the clusters is the type III antiferromangetic one do the F-type Bravais class crystals, being identical with that of {{{{{ Cd}_{ 1-x} {Mn }_{x }Te }}}}. Neutron inelastic scattering measure-ment has been performed for {{{{{ Zn}_{ 0.6} { Mn}_{ 0.4}Te }}}} sample using the cold neutron spectrometer. AGNES. High resolution measurement with the energy resolution of {{{{ TRIANGLE E= +- .01meV}}}} was carried out in the temperature range from 10K to the ambient. Critical scattering, closely related with the spin glass transition, has been observed for the first time in this semimagnetic semi-conductor. The critical scattering is observed at temperatures in the vicinity of the spin glass transition temperature, 17K. The scattering is observed as a kind of quasielastic scattering in the reciprocal range where the elastic magnetic diffuse scattering has been observed, e.g., 11/20 reciprocal point, indicating the spin fluctuation has dynamic components in this material. Photoconductivity has been discovered below 150K in {{{{{ Zn}_{ 0.4} {Mn }_{0.6 } Te}}}}. The electric AC conductivity has been increased dramatically under the laser light with the wave lengths of {{{{ lambda =6328,5145 and4880 }}}}$\AA$ ,respectively. After the light was darkened, the conductivity was reduced to the original level after about 2000 seconds at 50K, being above the spin glass transition temperature. This phenomenon is the typical persistent photoconductivity; PPC which was similarly found in {{{{ { Zn}_{ 1-x} { Mn}_{x} Te}}}}.

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Eutectic-based Phase-change Recording Materials for 1-2X and 4X Speed Blu-ray Disc

  • Seo Hun;Lee Seung-Yoon;Lee Kwang- Lyul;Kim Jin-Hong;Bae Byeong-Soo
    • Transactions of the Society of Information Storage Systems
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    • v.1 no.1
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    • pp.34-41
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    • 2005
  • We report some recent results in the rewritable Blu-ray Disc with enhanced overwrite cyclability by using the growth dominant eutectic based Ge(Sb70Te30)+Sb recording layer, GeN interface layer and write strategy optimization. We have developed phase-change optical media with appropriate write strategy for 36(i.e., 1X)-72Mbps(i.e., 2X) dual speed Blu-ray Disc system and fur the future high speed optical data storage. For recording layer, eutectic-based Ge(Sb70Te30)+Sb material was used and Sb/Te ratio and Ge content were optimized to obtain proper erasability and archival stability of recorded amorphous marks. The recording layer is wrapped up in GeN interface layers to obtain overwrite cyclability and higher crystallization speed. In addition, we designed appropriate write strategy so called Time-Shifted Multipulse (TSMP) write strategy where starting position of multipulse parts are shined from reference clock. With this write strategy, the jitter characteristics of the disc was improved and we found that leading edge jitter was improved much more than trailing edge jitter in 1X-2X speed recording. Finally, we investigated the higher speed feasibility of 144Mbps(i.e., 4X) by adopting some elemental doping to the eutectic based Ag-In-Sb-Te recording layer and structural optimization of constitution layers in Blu-ray Disc. In the paper, we report the effect of Sn addition for the feasibility of higher speed recording. The addition of Sn shows increases of the crystallization speed of phase change recording layer.

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Thermoelectric properties of $(Bi,;Sb)_2;(Te,;Se)_3$-based thin films and their applicability to temperature sensors ($(Bi,;Sb)_2;(Te,;Se)_3$계 박막의 열전 특성 및 온도 센서로의 응용)

  • 한승욱;김일호;이동희
    • Journal of the Korean Vacuum Society
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    • v.6 no.1
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    • pp.69-76
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    • 1997
  • P-type ($Bi_{0.5}Sb_{1.5}Te_3$) and n-type ($Bi_2Te_{2.4} Se_{0.6}$) thermoelectric thin film were deposited on glass and Teflon substrates by the flash evaporation technique. The changes in thermoelectric properties, such as Seebeck coefficient, electrical conductivity, carrier concentration, carrier mobility, thermal conductivity, and figure of merit, were investigated as a function of film thickness and annealing condition. Figures of merit of the thin films annealed at 473 K for 1 hour were improved to be $1.3{\times}10^{-3}K^{-1}$ for p-type and $0.3{\times}10^{-3}K^{-1}$ for n-type, and they were almost independent of film thickness. Temperature sensors were fabricated from the thin films having the above mentioned properties. And thermo-emf, sensitivity, and time constant of the sensors were measured to evaluate their characteristics for temperature sensors. Thin film sensors deposited on Teflon substrates showed better performance than those on glass substrates, and their sensitivity and time constant were 2.91 V/W and 28.2 sec respectively for the sensor of leg width 1 mm$\times$length 16 mm.

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Measurement of Peltier Heat at the Solid/Liquid Interface and Its Application to Crystal Growth II : Measurement and Application (고/액 계면에서의 Peltier 열 측정 및 결정성장에의 응용 II : 측정과 응용)

  • Kim, Il-Ho;Jang, Kyung-Wook;Lee, Dong-Hi
    • Korean Journal of Materials Research
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    • v.9 no.11
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    • pp.1112-1116
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    • 1999
  • Thermoelectric effects on the temperature changes at the solid- and liquid-phase and its interface were studied by using the unidirectional solidification of $\textrm{Bi}_{2}\textrm{Te}_{3}$. Cooling or heating effects measured with current density. polarity and current passing time were quite different. By separating sole Peltier, Thomson and Joule heat theoretically and experimentally, the Peltier coefficient at the solid/liquid interface of $\textrm{Bi}_{2}\textrm{Te}_{3}$ was -1.10$\times\textrm{10}^{-1}$V, and the Thomson coefficients of solid- and liquid-phase were 7.31\times\textrm{10}^{-4}V/K, 5.77\times\textrm{10}^{-5}V/K, respectively. When D.C. passed from solid-phase to liquid-phase during the crystal growth of $\textrm{Bi}_{2}\textrm{Te}_{3}$ the crystal with more directionality was obtained owing to increase of the temperature gradient in liquid by the Peltier cooling. But in reverse current direction, the crystallinity was not changed significantly.

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The structure and the surface composition of semiconductor CdZnTe films by EBE (EBE로 증착된 반도체 CdZnTe 박막의 결정구조와 표면조성)

  • 박국상;김선옥;이기암
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.5 no.1
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    • pp.25-36
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    • 1995
  • We have investigated the structure and the conductivity of the $Cd_{1-y}Zn_{y}$ Te films evaporated on the glass substrates (Corning 7059) by Electron Beam Evaporator (EBE) in pressure of approximately $1 {\times} 10^{-6}$ torr.The structure temperatures were held at both room temperature and $300^{\circ}C$, and the samples have annealed for an hour at $300^{\circ}C$ The survace com-position of the as-prepared films were slightly different from those of CdZn Te source material.Cd losses on the CdZnTe surface was measured about 4% of atomic ratio at room temperature substrate, whereas Zn atomic ratio was nearly constant, relatively. The strure is observed to be polycrystalline whose phase is mainly cubic phase. Thermal expansion coefficient was $6.30 {\times} 10^{-5}/^{\circ}C$ which was calculated from the variation of lattice parameter by X-ray powder pat-terns measured at $400^{\circ}C$.Diffraction peaks were slightly increased by annealing for an hour at $300^{\circ}C $, but they werey highly affected by substrate temperature during evaporation.

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