• Korean Journal of Materials Research
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• v.6 no.7
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• pp.678-683
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• 1996

In the fabrication processes of thin film thermoelectrics, a subsequent annealing treatment is inevitable to reduce the defects and residual stresses introduced during the film growth, and to make the uniform carrier concentration of the film. However, the diffusion-induced atomic redistribution and the broadening of p/n junction region are expected to affect the thermoelectric properties of thin film modules. The present study intends to investigate the diffusion at the p/n junctions of thermoelectric thin films and to relate it to the property changes. The film junctions of p-type(Bi0.5Sb1.5Te3)and n-type(Bi2Te2.4Se0.6)were prepared by the flash evaporation method. Aluminum thin layer was employed as a diffusion barrier between p-and n-type films of the junction. This was found to be an effective barrier by showing a negligible diffusion into both type films. After annealing treatment, the thermoelectric properties of p/n couples with aluminum barrier layer were accordingly retained their properties without any deterioration.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.353-359
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• 2000

$(Bi_{0.15}Sb_{0.85})_2Te_3$ and $(Bi_{1-x}Sb_x)_2Te_3$ thermoelectric thin films were prepared by magnetron sputtering process, and their thermoelectric characteristics were investigated with variation of the sputtering condition and the $Sb_2Te_3$ content. The $(Bi_{0.15}Sb_{0.85})_2Te_3$ film, deposited by DC sputtering at $300^{\circ}C$ with rotating the Corning glass substrate at 10 rpm, was fully crystallized to $(Bi,Sb)_2Te_3$ phase with c-axis preferred orientation. This $(Bi_{0.15}Sb_{0.85})_2Te_3$ film exhibited the Seebeck coefficient of 185 $\mu$V/K which was higher than the values of other $(Bi_{0.15}Sb_{0.85})_2Te_3$ films fabricated with different sputtering conditions. With increasing the $Sb_2Te_3$ content, the Seebeck coefficient and electrical resistivity of p-type $(Bi_{1-x}Sb_x)_2Te_3$ (0.77$\leq$x$\leq$1.0) film were lowered. Among p-type $(Bi_{1-x}Sb_x)_2Te_3$ films, a maximum power factor of $0.79{\times}10^{-3}W/K^2-m$ was obtained at (Bi_{0.05}Sb_{0.95})_2Te_3$ composition..

• Korean Journal of Crystallography
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• v.9 no.2
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• pp.153-158
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• 1998

백금족 원소의 광화 마그마 내에서의 지화학적·결정학적 거동을 밝히기 위하여 백금, 안티모니, 테루리움계를 선택하여 800℃에서 안정한 광물 또는 화합물의 종류와 이들의 공생군, 원소간의 고용한계 등에 대해 실험적으로 연구하였다. 순도가 높은 각 원소를 초기 반응 물질로 하였으며, 고순도 석영관을 용기로 사용하였으며, 화학 반응 생성물은 반사현미경의, X선회절분석기, 전자현미분석기 등을 사용하여 분석하였다. 800℃에서 안정한 화합물로는, 백금(Pt), PtSb(stumpflite), PtSb2(geversite), PtTe, Pt3Te4, Pt2Te3, PtTe2(moncheite)이다. 이 연구 결과로부터 800℃에서의 상평형다이아그램을 정립하였다. 이 온도에서는 stumpflite와 geversite 및 moncheite가 현저히 치환고용체를 이루는데 그 한계는 각각 10 at.% Te, 28.5 at.% Te, 19.5 at.% Sb이다. 특히 원소광물인 백금과 stumpflite 및 moncheite는 화학성분은 이들 광물을 포함하고 있는 광상의 생성온도를 제시해 주는 지질온도계 역할을 할 수 있다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.1
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• pp.6-13
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• 2001

By using a vertical Bridgeman method, single crystalline structures of $Mg_xZn_{1-x}Te(0{\le}X{\le}0.48)$ were grown for various Mg mole compositions. With the increasing Mg fraction, the lattice constant is linearly increased from 6.103 to 6.239$\AA$ for the range of $0{\le}X{\le}0.48$ and the lattice constant of zincblende MgTe was linearly extrapolated to the value of 6.433$\pm$0.002$\AA$. The optical properties of the crystalline structure were characterized with photocurrent measurements. As a results of photocurrent spectra, the single crystalline $Mg_xZn_{1-x}Te$ show the energy bandgap of 2.380 and 2.260eV at 4.2 and 294 K, respectively. The photocurrent peak blueshifts with increasing Mg mole fraction and show the linear dependence of energy bandgap, $E_g$(X)=b+(0.8)X. The extrapolation shows the energy bandgaps of MgTe of 3.18 and 3.06eV at the temperatures of 4.2 and 294K, respectively. Furthermore, the photocurrent peaks redshifts with increasing temperature and the temperature coefficient is given to the value of $dE_g$/dT=-(5.6~$6.1){\times}10^{-4}$eV/K. for the temperature range above 100K.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.4
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• pp.55-61
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• 2011

The n-type $Bi_2(Te_{0.9}Se_{0.1})_3$ powers were fabricated by mechanical alloying, mixed with tungsten(W) powders, and hot-pressed at $550^{\circ}C$ for 30 minutes. Thermoelectric properties of the hot-pressed $Bi_2(Te_{0.9}Se_{0.1})_3$ were characterized as a function of the volume percent of tungsten-powder addition. The power factor of the hot-pressed $Bi_2(Te_{0.9}Se_{0.1})_3$ was $21.9{\times}10^{-4}$ $W/m-K^2$, and was improved to $30.5{\times}10^{-4}$ $W/m-K^2$ by dispersion of 1 vol% W powders. While the dimensionless figure-of-merit of the $Bi_2(Te_{0.9}Se_{0.1})_3$ hot-pressed without dispersion of W powders was measured as 0.52 at room temperature, it became substantially enhanced to 0.95 with addition of 1 vol% W powders.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.1
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• pp.57-61
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• 2005

The microwave dielectric properties of 0.6TiTe$_3$O$_{8}$-0.4MgTiO$_3$ ceramics with H$_3$BO$_3$-SnO were investigated to improve the sintering condition for the LTCC. According to the X-ray diffraction patterns, 0.6TiTe$_3$O$_{8}$-0.4MgTiO$_3$ ceramics with H$_3$BO$_3$-SnO had the columbite structure of TiTe$_3$O$_{8}$ phase and the ilmenite structure of MgTiO$_3$ phase and there were no second phase. Increasing the addition of H$_3$BO$_3$-SnO, the density and dielectric constant of the 0.6TiTe$_3$O$_{8}$-0.4MgTiO$_3$ ceramics were increased but the quality factor was decreased. The temperature coefficient of resonant frequency was shifted to the negative(-) direction with addition of H$_3$BO$_3$-SnO.EX>-SnO.

• Korean Journal of Veterinary Service
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• v.33 no.1
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• pp.59-66
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• 2010

This study was carried out to investigate the characters of Listeria monocytogenes isolated from food, animal feces, dry cattle food, and the environment in Seoul and Kyonggi province during the period from 1998 to 2003. Serotyping of 70 L. monocytogenes isolates was performed according to the manufacturer's instruction. Minimum inhibitory concentrations (MICs) were determined by the microdilution method according to the guidelines of the Clinical and Laboratory Standards Institute. All the isolates were tested against 20 antimicrobial agents. The serotypes of the 70 L. monocytogenes isolates were 1/2c (62.8%), 1/2a (20%) and 1/2b (17.2%). Of the 70 L. monocytogenes isolates, 67.1%, 57.1%, 11.4%, 5.7%, 2.8%, 1.4% and 1.4% were resistant to tetracycline (Te), minocycline (Mi), norfloxacin (Nor), ciprofloxacin (Cip), neomycin (N), chloramphenicol (C) and cephalothin (Cf), respectively. However, all isolates were 100% sensitive to antibiotics such as amikacin, ampicillin, erythromycin, gentamycin, imipenem, kanamycin, ofloxcin, streptomycin, penicillin, trimethoprim, trimethoprim/sulfamethoxazole, tobramycin, and vancomycin. Multiple resistance patterns of the isolates were observed in TeMiNor Cip (1.4%), TeMiNor (7.1%), TeMiCip (2.9%), TeMiN (1.4%) and TeMi (44.3%). The results of this study indicate that many L. monocytogenes isolates are resistant to antimicrobial agents including Te and Mi. The possibility that the isolates could increasingly acquire multiple antimicrobial resistant properties cannot be precluded.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.253-253
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• 2011

ZnTe semiconductor is very attractive a material for optoelectronic devices in the visible green spectral region because of it has direct bandgap of 2.26 eV. The prototypes of ZnTe light emitting diodes (LEDs) have been reported [1], showing that their green emission peak closely matches the most sensitive region of the human eye. The optoelectronic properties of ZnTe:O film allow to expect a large optical gain in the intermediate emission band, which emission band lies about 0.4-0.6 eV below the conduction band of ZnTe [2]. So, the ZnTe system is useful for the production of high-efficiency multi-junction solar cells [2,3]. In this work, the ZnTe:O thin films were deposited on Al2O3 substrates by using the radio frequency magnetron sputtering system. Three sets of samples were prepared using argon and oxygen as the sputtering gas. The deposition chamber was pre-pumped down to a base pressure of 10-7 Torr before introducing gas. The deposition pressure was fixed at 10-3 Torr throughout this work. During the ZnTe deposition, the substrate temperature was 300 oC. The optical properties were also investigated by using the ultraviolte-visible (UV-Vis) spectrophotometer.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.4
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• pp.286-291
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• 2000

$Cd_{1-x}Mn_{x}Te$ singe crystals were grown by the vertical Bridgman method and the Faraday rotations were measured as a function of wavelength and magnetic field. The Verdet constants were evaluated using the result of Faraday rotation. The Verdet constants were maximum at nearly absorption edge and increased for $0\leq x \leq 0.38 $ but decreased for x>0.40. We found that large Faraday rotation occur in $Cd_{0.62}Mn_{0.38}Te$ at nearly absorption edge wavelength was more useful for a magnetic field sensor than any other crystals, and $Cd_{0.60}Mn_{0.40}Te$ crystal was useful in this application when wavelength is He-Ne laser wavelength.

• Journal of the Korean Vacuum Society
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• v.5 no.4
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• pp.348-353
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• 1996

Rapid thermal annealing (RTA) was applied to polycrystalline CdTe thin films evaporated on CdS/ITO/glass substrate and the effect of the annealing temperatures and the atmosphere on physical properties of polycrystalline CdTe thin films and CdTe/CdS solar cell characteristics were studied. Results obtained by EDX showed that the bulk composition of CdTe remained stoichiometric after annealing at $550^{\circ}C$ in the air but the surface composition became Cd-rich. Cross-sectional TEM and micro EDX showed that columnar grains and micro-twins remained even after RTA, however, and the sulfur content in the annealed CdTe (added by sulfur diffusion from CdS during the annealing) was much smaller than that by furnace annealing. Among the investigated RTA temperatures and gas environments, the cell made with CdTe annealed at $550^{\circ}C$ in air showed the best solar energy conversion efficiency.