• Journal of the Korean Ceramic Society
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• v.32 no.2
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• pp.239-247
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• 1995

Chalcogenide glasses with compositions of Ge10Se90-xTex(X=0~50 at.%) were prepared in order to investigate the effects of Te substitution on the transmission characteristics of Ge-Se glasses in the 8~12 ${\mu}{\textrm}{m}$ wavelength region. Absorption coefficients were observed to decrease with Te addition, indicating the improved transmission capabilities of Ge-Se-Te glasses as compared to binary Ge-Se glasses. XRD analysis of crystallized glasses suggested the formation of weaker Se-Te and/or Te-Te bonds with addition of Te substituting for Se in stronger Se-Se bonds. Incorporation of Te in excess of 20at% resulted in the formation of hexagonal Te phases when crystallized. It is speculated that the presence of Te-Te bonds with highly metallic bond character resulted in the enhanced crystallization tendencies of glasses. Fromation of Te-rich chains through gradual replacement of Se-Se with Se-Te and/or Te-Te bonds was further supported by decreases in glass transition and crystallization temperatures.

• Korean Journal of Materials Research
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• v.8 no.6
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• pp.493-498
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• 1998

CdTe films were deposited by close spaced sublimation with various substrate temperatures, cell areas, and thicknesses of CdTe and ITO layers and their effects on the CdS/CdTe solar cells were investigated. The resistivity of CdTe layers employed in this study was 3$\times$ $10^{4}$$\Omega$cm For constant substrate temperature the optimum substrate ternperature for CdTe deposition was $600^{\circ}C$. To obtain larger grain size and more compact microstructure, CdTe film was initially deposited at 62$0^{\circ}C$, and then deposited at 54$0^{\circ}C$. The CdTe film was annealed at 62$0^{\circ}C$ and $600^{\circ}C$ sequentially to maintain the CdTe film quality. The photovoitaic cell efficiency improved by the "two-wave" process. For constant substrate temperature, the optimum thickness for CdTe was 5-6$\mu m$. Above 6$\mu m$ CdTe thickness, the bulk resistance of CdTe film degraded the cell performance. As the cell area increased the $V_{oc}$ remained almost constant, while $J_{sc}$ and FF strongly decreased because of the increase of lateral resistance of the ITO layer. The optimum thickness of the ITa layer in this study was 300~450nm. In this experiment we obtained the efficiency of 9.4% in the O.5cm' cells. The series resistance of the cell should be further reduced to increase the fill factor and improve the efficiency.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.325-329
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• 1996

We report on p-type arsenic doping of metalorganic vapor phase epitaxially (MOVPE) grown HgCdTe on (100) GaAs. HgCdTe was grown at $370^{\circ}C$ in a horizontal reactor with using dimethy-cadmium, diisoprophyltelluride, and elemental Hg. We used tris-dimethylaminoarsenic (DMAAs) as the metalorganic for p-doping. 4micron thick CdTe and subsequently 10micron thick HgCdTe were grown on (100) GaAs substrate. Interdiffused multilayer process in which thin CdTe and HgTe layers are grown alternately and interdiffused to obtain homogeneous HgCdTe alloys was used. Arsenic was doped during CdTe growth cycle. After growth HgCdTe was annealed at $415^{\circ}C$ for 15 min and then annealed again at $220^{\circ}C$ for 3 hr, both with Hg-saturate condition. We could obtain p-doping from 2.5$\times$$10^{16}$ to 6.6$\times$$10^{17}$$cm^{-3}$, depending on the DMAAs partial pressure. With the dual Hg-annealing, activation of arsenic was aboutt 90%, which was confirmed by SIMS measurement. With only low temperature annealing at $220^{\circ}C$ for 3hr, activation efficiency was about 50%.

• Bulletin of the Korean Chemical Society
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• v.15 no.12
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• pp.1098-1103
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• 1994

Atomic force microscopy (AFM) images of two conducting layered transition-metal ditellurides, $TaTe_2$ and $Ta_{0.5}$$V_{0.5}$$Te_2$, were examined and their surface and bulk structural features were compared. All the measured unit cell parameters from AFM image were consistent and in complete agreement with the results of the X-ray diffraction. The microscopic structures of corrugated surface tellurium sheets were strongly affected by the modification of metal double zig-zag chains underneath Te surface. Large difference in the height amplitudes of AFM images in $TaTe_2$ and $Ta_{0.5}$$V_{0.5}$$Te_2$ phases was observed and this reflects large difference in the surface electron densities of two phases. On surface, the shorter intralayer Te…Te contacts in $TaTe_2$ induce more electron transfer from Te p-block bands to Ta d-block bands, thus electron density on surface observed in $TaTe_2$ is much lower than that of $Ta_{0.5}$$V_{0.5}$$Te_2$. However, in bulk, interlayer Te…Te contacts in V substituted phase are shorter than those in $TaTe_2$ phase, thus tellurium-to-metal electron transfer occurs more easily in $Ta_{0.5}$$V_{0.5}$$Te_2$ phase.

• Korean Journal of Materials Research
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• v.5 no.2
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• pp.251-258
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• 1995

In an effort to increase the thermoelectric figure of merit by reducing the thermal conductivity, the unidirectionally solidified n-type (Bi, Pb)-Te based alloys which form a $Bi_{2}Te_{3}-PbBi_{4}Te_{7}$eutectic lamellar structure were investigated with the microstructural control at various solidification conditions. PbBi_{4}Te_{7}$ lamellae were grown on cleavage plane(0001) of $Bi_{2}Te_{3}$ and the interlamellar spacing decreased from 10.4 $\mu \textrm{m}$to 3.2$\mu \textrm{m}$ with growth velocity variation from 1.4 \times 10^{-4}$cm/sec to $8.3 \times 10^{-4}$cm/sec. Seebeck coefficient was constant, $\mid$$\alpha$$\mid$=29 $\mu$ V/K regardless of growth direction, growth velocity and temperature gradient. Electrical conductivity showed a tendency to decrease slightly with growth velocity and it parallel to growth direction was about three times as large as perpendicular direction. The figures of merit were varied differently from Seebeck coefficients and electrical conductivities depending on the growth direction, growth velocity and temperature gradients. They showed the relative increase in case of perpendicular direction compared with parallel to growth direction. It is believed to be due to the reduction of the thermal conductivity according to decrease of the interlamellar spacing.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.2
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• pp.49-54
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• 2010

The n-type $Bi_2(Te,Se)_3$ powders were fabricated by melting/grinding method and were hot-pressed in order to compare thermoelectric properties of the hot-pressed specimens with those of the $Bi_2(Te,Se)_3$ ingot. Effects of mechanical milling treatment of the $Bi_2(Te,Se)_3$ powders on thermoelectric characteristics of a hot-pressed specimen were also examined. The hot-pressed $Bi_2(Te,Se)_3$ exhibited power factors of $27.3{\sim}32.3{\times}10^{-4}W/m-K^2$ which were superior to $24.2{\times}10^{-4}W/m-K^2$ of the ingot. The $Bi_2(Te,Se)_3$, hot-pressed after mechanical milling treatment of the powders, possessed a non-dimensional figure-of-merit of 1.02 at $100^{\circ}C$ and exhibited extrinsic-intrinsic transition at $130^{\circ}C$.

• Bulletin of the Korean Chemical Society
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• v.33 no.6
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• pp.1851-1855
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• 2012

The $NO_2$ gas sensing properties of multiple-networked, Pt-loaded $TeO_2$ nanorod sensors were examined. Scanning electron microscopy revealed nanowires with diameters of 50-100 nm and lengths of a few micrometers. Transmission electron microscopy and X-ray diffraction showed that the nanrods were tetragonal-structured, single crystal $TeO_2$. The Pt-loaded $TeO_2$ nanorod sensors exhibited sensitivities of 11.00, 10.26, 11.23 and 11.97% at $NO_2$ concentrations of 10, 50, 100 and 200 ppm, respectively, at $300^{\circ}C$. These sensitivities were more than 10 times higher than those of bare-$TeO_2$ nanorod sensors. The response times of the sensors were 310, 260, 270 and 230 sec at $NO_2$ concentrations of 10, 50, 100 and 200 ppm, respectively. The recovery times of the Pt-loaded $TeO_2$ nanorods were 390, 330, 335, and 330 sec at $NO_2$ concentrations of 10, 50, 100 and 200 ppm, respectively. The origin of the enhanced sensing properties of the $TeO_2$ nanorods by Pt loading is discussed.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.4
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• pp.77-82
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• 2010

Effects of evaporation processes and a reduction annealing on thermoelectric properties of the Sb-Te thin films prepared by thermal evaporation have been investigated. The thin film evaporated by using the powders formed by crushing a $Sb_2Te_3$ ingot as an evaporation source exhibited a power factor of $2.71{\times}10^{-4}W/m-K^2$. The thin film processed by evaporation of the mixed powders of Sb and Te as an evaporation source showed a power factor of $0.12{\times}10^{-4}W/m-K^2$. The thin film fabricated by coevaporation of Sb and Te dual evaporation sources possessed a power factor of $0.73{\times}10^{-4}W/m-K^2$. With a reduction annealing at $300^{\circ}C$ for 2 hrs, the power factors of the films evaporated by using the $Sb_2Te_3$ ingot-crushed powders and coevaporated with Sb and Te dual evaporation sources were remarkably improved to $24.1{\times}10^{-4}W/m-K^2$ and $40.2{\times}10^{-4}W/m-K^2$, respectively.

• Journal of the Korean institute of surface engineering
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• v.49 no.1
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• pp.40-45
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• 2016

Recently, $Bi_2Te_3$-based alloys are the best thermoelectric materials near to room temperature, so it has been researched to achieve increased figure of merit(ZT). Ternary compounds such as Bi-Te-Se and Bi-Sb-Te have higher thermoelectric property than binary compound Bi-Te and Sb-Te, respectively. Compared to DC plating method, pulsed electrodeposition is able to control parameters including average current density, and on/off pulse time etc. Thereby the morphology and properties of the films can be improved. In this study, we electrodeposited n-type ternary Cu-doped $Bi_2(Te-Se)_3$ thin film by modified pulse technique at room temperature. To further enhance thermoelectric properties of $Bi_2(Te-Se)_3$ thin film, we optimized Cu doping concentration in $Bi_2(Te-Se)_3$ thin film and correlated it to electrical and thermoelectric properties. Thus, the crystal, electrical, and thermoelectric properties of electrodeposited $Bi_2(Te-Se)_3$ thin film were characterized the XRD, SEM, EDS, Seebeck measurement, and Hall effect measurement, respectively. As a result, the thermoelectric properties of Cu-doped $Bi_2(Te-Se)_3$ thin films were observed that the Seebeck coefficient is $-101.2{\mu}V/K$ and the power factor is $1412.6{\mu}W/mK^2$ at 10 mg of Cu weight. The power factor of Cu-doped $Bi_2(Te-Se)_3$ thin film is 1.4 times higher than undoped $Bi_2(Te-Se)_3$ thin film.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.2 s.43
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• pp.9-15
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• 2007

Thermoelectric properties of the electrodeposited Bi-Te films and photoresist process have been investigated to apply for thermoelectric thin film devices. After plating in Bi-Te solutions of 20 mM concentration, which were prepared by dissolving $Bi_2O_3$ and $TeO_2$ into 1M $HNO_3$, thermoelectric properties of the films were characterized with variation of the Te/(Bi+Te) ratio in a plating solution. With increasing the Te/(Bi+Te) ratio in the plating solution from 0.5 to 0.65, Seebeck coefficient of Bi-Te films changed from $-59{\mu}V/K$ to $-48{\mu}V/K$ and electrical resistivity was lowered from $1m{\Omega}-cm$ to $0.8m{\Omega}-cm$ due to the increase in the electron concentration. Maximum power factor of $3.5{\times}10^{-4}W/K^2-m$ was obtained for the Bi-Te film with the $Bi_2Te_3$ stoichiometric composition. Using multilayer overhang process, the photoresist pattern to form thermoelectric legs of 30 m depth and 100m diameter was successfully fabricated fur micro thermoelectric device applications.