• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.62-65
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• 1995

CdTe crystals were grown by the vertical Bridgman method. P-type DcTe crystals were grown with Cd:Te= 1:1.001 wt. % ratio, while n-type CdTe crystals were 1:1 Also, CdTe:In crystals were investigated, Lattic constants were 6.489${\AA}$ for p-type 6.480${\AA}$for n=type and 6.483${\AA}$ for CdTe:In EPD was 10$\^$-3/-10$\^$4/cm$\^$-2/ for n-, p-type CdTd, 10$\^$4/-10$\^$5/cm$\^$-2 for Cd:Te:In using by E-Ag solution for (111) plane The carrier concentration, the resistivity and the Hall carrier mobility measured by the van der Pauw method were p=5.78${\times}$10$\^$15/cm$\^$-3/, $\rho$=20.2$\Omega$cm, ${\mu}$$\sub$p/=75.6cm$\^$-2/ V$\^$-1/ sec$\^$-1/ for p-typem n=2.98${\times}$10$\^$16/cm$\^$-3/, $\rho$=0.214$\Omega$cm, ${\mu}$$\sub$p/=978.9cm$\^$-2/ V$\^$-1/ sec$\^$-1/ for n-type and n=7.45${\times}$10$\^$16/cm$\^$-3/, $\rho$=1.54 ${\times}$10$\^$3/$\Omega$cm, ${\mu}$$\sub$p/=658.4 cm$\^$-2/ V$\^$-1/ sec$\^$-1/ for CdTe:In crystals, Transmittance of p-type CdTe was 61% that of n-type was 65%, Cd:Te:In showed 60% IR transmittance.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.2
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• pp.440-448
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• 2004

In this paper, to make a solar cell of II-Ⅵ ZnTe compound semiconductor, we studied for the property of the transparent electrode(AZO) and Buffer layer(ZnO), and for reducing the energyband gap of optical absorber layer which are most effective on its efficiency. The ZnTe thin film was used the optical absorber layer of solar cell. Zn and Te were deposited using the co-sputtering method. The thin film was sputtered RF power of Zn/50W and Te/30W, respectively and a substrate temperature of foot under Ar atmosphere of 10mTorr. The energy band gap of the thin film was 1.73ev Then the thin film was annealed at $400^{\circ}C$ for 10sec under a vacuum atmosphere. The energy band gap of 1.67eV was achieved and the film composition ratio of Zn and Te was 32% and 68%. At the best condition, the Solar Cell was manufactured and the efficiency of 6.85% (Voc: 0.69V, Jsc: 21.408㎃/$cm^2$, Fill factor (FF): 0.46) was achieved.

• Bulletin of the Korean Chemical Society
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• v.18 no.10
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• pp.1105-1108
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• 1997

The new amorphous intermetallic compounds, M3(AsTe3)2: M=Cr, Co, Fe, were synthesized by the precipitation reaction of the Zintl anion AsTe33- with the divalent transition metal halides in aqueous solution and analyzed by EDS equipped with SEM and PIXE. The empirical formula of the specimens was found to be Fe3.0As1.8Te5.9, Co3.0As2.1Te6.5, and Cr3.0As2.0Te6.9 by the quantitative elemental analysis. The dc specific resistivity of the materials was measured as a function of temperature in the range from 20 to 300 K, in which their resistivity of Cr3(AsTe3)2 was largely dependent on temperature, while those of Co3(AsTe3)2 and Fe3(AsTe3)2 were only slightly dependent on temperature. To characterize the spin glass state of the specimens, the ac and dc magnetic susceptibility were measured and it was found that Co3(AsTe3)2 and Fe3(AsTe3)2 undergo a transition to a spin glass state at 6 K and 38 K, respectively. Magnetization data are reported as both thermal remanent magnetization (TRM) and isothermal remanent magnetization (IRM) as a function of magnetizing field and temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.599-604
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• 2011

A highly strained nanostructure comprising crystallographically aligned HgTe nanoinclusions and a surrounding PbTe matrix has been synthesized using a precipitation process of supersaturated HgTe-PbTe alloys. From the early precipitation stage, HgTe nanoinclusions take disk shape, which is transformed from initial HgTe nuclei, although there is no lattice constant difference of the two end components at standard state. As a primary reason for the morphological transformation of the initial spherical HgTe nuclei to HgTe nanodisks, the induced lattice mismatch is suggested. On the condition that the HgTe nanodisks maintain perfect coherent nature with PbTe matrix, the stress-free lattice constant of constrained HgTe nanodisks has been calculated based on the defined concept of the strain-induced tetragonality, the linear elasticity and the actual measurement in HRTEM images.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.247.1-247.1
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• 2016

Low-cost, high efficiency solar cells are tremendous interests for the realization of a renewable and clean energy source. ZnTe based solar cells have a possibility of high efficiency with formation of an intermediated energy band structure by impurity doping. In this work, ZnO/ZnTe:Cr and ZnO/i-ZnTe structures were fabricated by pulsed laser deposition (PLD) technique. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnTe target, whose density of laser energy was 10 J/cm2. The base pressure of the chamber was kept at approximately $4{\times}10-7Torr$. ZnTe:Cr and i-ZnTe thin films with thickness of 210 nm were grown on p-Si substrate, respectively, and then ZnO thin films with thickness of 150 nm were grown on ZnTe:Cr layer under oxygen partial pressure of 3 mTorr. Growth temperature of all the films was set to $250^{\circ}C$. For fabricating ZnO/i-ZnTe and ZnO/ZnTe:Cr solar cells, indium metal and Ti/Au grid patterns were deposited on back and front side of the solar cells by using thermal evaporator, respectively. From the fabricated ZnO/ZnTe:Cr and ZnO/i-ZnTe solar cell, dark currents were measured by using Keithley 2600. Solar cell parameters were obtained under Air Mass 1.5 Global solar simulator with an irradiation intensity of 100 mW/cm2, and then the photoelectric conversion efficiency values of ZnO/ZnTe:Cr and ZnO/i-ZnTe solar cells were measured at 1.5 % and 0.3 %, respectively.

• Journal of Sensor Science and Technology
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• v.12 no.6
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• pp.273-281
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• 2003

A stoichiometric mixture for $CdIn_2Te_4$ single crystal was prepared from horizontal electric furnace. The $CdIn_2Te_4$ single crystal was grown in the three-stage vertical electric furnace by using Bridgeman method. The quality of the grown crystal has been investigated by the x-ray diffraction and the photoluminescence measurements. The (001) growth plane of oriented $CdIn_2Te_4$ single crystal was confirmed from back-reflection Laue patterns. The carrier density and mobility of $CdIn_2Te_4$ single crystal measured with Hall effect by van der Pauw method are $8.61{\times}10^{16}\;cm^{-3}$ and $242\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CdIn_2Te_4$ single crystal obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.4750\;eV-(7.69{\times}10^{-3}\;eV)T^2/(T+2147)$. After the as-grown $CdIn_2Te_4$ single crystal was annealed in Cd-, In-, and Te-atmospheres, the origin of point defects of $CdIn_2Te_4$ single crystal has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Te}$, $Cd_{int}$, and $V_{Cd}$, $Te_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Cd-atmosphere converted $CdIn_2Te_4$ single crystal to an optical n-type. Also, we confirmed that In in $CdIn_2Te_4$ did not form the native defects because In in $CdIn_2Te_4$ single crystal existed in the form of stable bonds.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.18 no.1
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• pp.1-41
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• 1992

A new and unique class of nonionic surfactants was synthesized by reacting biological a-tocopherol with ethylene oxide for functional cosmetics. The structures were confirmed by Hl-UMR, FT-lR, TLC and elemental analysis. POV and conjugated diene value study for EPO showed POE(n)TE had antioxidative effect similar to tocopheryl acetate Protective effect on cell membrane in photohemolysis of POE(5)TE, POE(10)TE and POE(18)TE were slightly lower than tocopherol but higher than nonoxynol-12, and POE(10)TE had UV absorption power comparable with tocopherol and homosalate. Biological activity of the hydrophobic group of the new surfactants make them unique and different from those of conventional nonionic surfactants Systematic safety evaluations of POE(n)TEs on the skin and eye proved that they are as safe as tocopherol. The results of physicochemical study showed POE(10)TE had the lowest CMC value, POE(18)TE had the maximum surface tension reduction and the highest foam volume and POE(n)TEs had various HLB values by the degree of ethoxylation. The test resul Is of technological and practical applications of these surfactants for cosmetics showed some POE(n)TEs were superior to conventional surfactants. POE(5)TE in W/O emulsions, POE(10)TE and POE(12)TE in O/W emulsions, POE(12)TE in dispersions, POE(18)TE in solubilizations and POE(50)TE in gelations were shown to be excellent which was considered due to the structural characteristic and formation of liquid crystals of POE(n)TEs. By the development and applications of these excel lent multi-functional surfactants, innovative functional cosmetics were successfully formulated.

• Nuclear Engineering and Technology
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• v.55 no.8
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• pp.3080-3087
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• 2023

Thermoelectric (TE) materials working in radioisotope thermoelectric generators are irradiated by neutrons throughout its service; thus, investigating the neutron irradiation stability of TE devices is necessary. Herein, the influence of neutron irradiation with fluences of 4.56 × 10¹⁰ and 1 × 10¹³ n/cm² by pulsed neutron reactor on the electrical and thermal transport properties of n-type Bi₂Te_2.7Se_0.3 and p-type Bi_0.5Sb_1.5Te₃ thermoelectric alloys prepared by cold-pressing and molding is investigated. After neutron irradiation, the properties of thermoelectric materials fluctuate, which is related to the material type and irradiation fluence. Different from p-type thermoelectric materials, neutron irradiation has a positive effect on n-type Bi₂Te_2.7Se_0.3 materials. This result might be due to the increase of carrier mobility and the optimization of electrical conductivity. Afterward, the effects of p-type and n-type TE devices with different treatments on the output performance of TE devices are further discussed. The positive and negative effects caused by irradiation can cancel each other to a certain extent. For TE devices paired with p-type Bi_0.5Sb_1.5Te₃ and n-type Bi₂Te_2.7Se_0.3 thermoelectric legs, the generated power and conversion efficiency are stable after neutron irradiation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.49-54
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• 1992

Devices of ITO/CdS/CdTe/Te/Al were prepared by Electron-Beam deposition under a vacuum of $7{\times}10^{-6}$[torr]. Optical, Electrical, Structural and Photovoltaic properties of thin film CdS/CdTe at substrate. temperature 300~500[$^{\circ}C$] were also investigated, The structure of CdTe films deposited was of the zincblende type a preferential orientation of the (111) plane parallel to the substrate, the CdTe dark resistivity was about $10^6[{\Omega}cm]$. The conversion, efficiency of the cell increased with increasing substrate temperature. The best-fabricated Cell was a conversion efficiency of 9.1[%].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.8
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• pp.663-668
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• 2003

CdTe quantum dots(QDs) were synthesized in aqueous solution by colloidal method. The synthesized CdTe QDs were identified to be cubic-structured ones by x-ray diffraction(XRD). The photoluminescence(PL) was performed for CdTe QDs prepared as a function of Te precursor concentration, condensation time and aging time. The PL intensity is strongly dependent on Te precursor concentration, indicating that the ratio of Te to Cd ions affects the particle size and size distribution of the CdTe QDs. Our PL study reveals that the intensity of PL peaks strengthens as the condensation time elongates, implying that annealing by thermal energy transferred during condensation would eliminate defects which act as killing centers in CdTe particles. Our photocurrent study suggests that the CdTe QDs materials are one of the prospective materials for optoelectronics including photodetectors.