• Environmental Analysis Health and Toxicology
• /
• 제18권2호
• /
• pp.121-129
• /
• 2003

Pendimethalin [N-(1-ethyl-propyl)-2, 6-dinitro-3, 4-xylidine, $C_{13}$H$_{19}$N$_3$O$_4$, M.W. = 281.3, CAS No. 40481-42-1]는 제초제의 일종으로, 본 연구에서는 박테리아 복귀 돌연변이 시험과 포유동물 세포를 이용한 염색체 이상 시험 및 마우스를 이용한 in vivo 소핵 시험을 수행하여 pendimethalin의 유전독성을 평가하였다. 박테리아 복귀 돌연변이 시험에서 pendimethalin은 Salmonella thphimurium TA98, TA1537 균주의 경우, 대사 활성계 존재와 부재시,TA100의 경우는 대사 활성계 부재시에만 313∼5,000 $\mu\textrm{g}$/p1a1e의 범위에서 농도의존적인 돌연변이율의 증가를 보여주었고, TA1535의 경우에는 대사 활성계 존재시 약간의 돌연변이가 증가되는 것을 관찰할 수 있었다. 그러나 대사 활성계 부재시 TA1535와 대사 활성계 존재시 TA100균주의 경우에는 돌연변이 유발능을 관찰할 수 없었다. 한편 포유동물 세포인 Chinese hamster lung(CHL) fibroblast를 이용한 염색체 이상 시험에서 pendimethalin은 대사 활성계 존재 및 부재시 2.32∼9.28 $\mu\textrm{g}$/ml 농도에서 clastogenicity를 보이지 않았다. 또한 203∼810 mg/kg의 pendimethalin을 구강 투여한 마우스의 골수세포를 이용한 in vivo소핵 시험의 결과에서도 통계적으로 유의한 소핵 유발능을 관찰할 수 없었다.다.

• 한국진공학회지
• /
• 제13권2호
• /
• pp.79-85
• /
• 2004

본 논문은 구리와 탄탈 박막내에 불순물로써 함유되기 쉬운 수소와 탄소, 그리고 산소 원소에 대해 이차이온 질량분석기(secondary ion mass spectrometry)와 글로우방전 질량분석기(glow discharge mass spectrometry)를 이용하여 분석하였고, 이들의 분석결과에 대해서 고찰하였다. 구리와 탄탈 박막은 실리콘 기판 위에 비질량 분리형 이온빔 증착장비를 이용하여 기판 바이어스를 걸지 않은 경우와 -50 V(구리 박막) 또는 -125 V(탄탈 박막)의 기판바이어스를 걸은 상태에서 증착하였다. 세슘 이온빔을 이용하여 분석한 SIMS 결과에서, 기판 바이어스를 걸지 않은 경우, 상당히 많은 피크들이 강하게 관찰되었는데 이는 위의 주요불순물들의 결합에 의한 상태로 검출된 것으로 이들 주요불순물들의 조합에 의해 가능한 질량번호를 산출하여 SIMS 결과의 모든 피크들을 해석할 수 있었다. 또한, 박막 내의 주요불순물들의 정량적인 GDMS 분석에 의해 SIMS 결과와의 일치성을 확인할 수 있었다.

• Advances in materials Research
• /
• 제2권3호
• /
• pp.173-180
• /
• 2013

Lead-free complex perovskite ceramics $NaMeO_3$ ($Me{\equiv}Nb$, Ta) were synthesized using conventional solid state reaction technique and characterized by structural, FTIR and electrical (dielectric and ac conductivity) studies. The crystal symmetry, space group and unit cell dimensions were determined from the experimental results using FullProf software. XRD analysis of the compound indicated the formation of single-phase orthorhombic structure with the space group Pmmm (47). Dielectric studies showed the diffuse phase transition at $394^{\circ}C$ for $NaNbO_3$ and $430^{\circ}C$ for $NaTaO_3$. Ac conductivity in both the compounds follows Jonscher's power law.

• Environmental Analysis Health and Toxicology
• /
• 제19권1호
• /
• pp.93-100
• /
• 2004

Pretilachlor [2-chloro-N -(2, 6-diethylphenyl)-N-(2-propoxyethyl) acetamide, $C_{17}$H$_{26}$ClNo$_2$, M.W.=311.9, CAS No.51218-49-6]는 제초제의 일종으로 본 연구에서는 박테리아 복귀 돌연변이 시험과 포유동물 세포를 이용한 염색체 이상 시험 및 마우스를 이용한 in vivo소핵 시험을 수행하여 pretilachlor의 유전독성을 평가하였다. 박테리아 복귀 돌연변이 시험에서 pretilachlor는 Salmonella typhimurium TA98, TA 100, TA1535, TA1537 균주의 대사 활성계 존재 및 부재시 313-5,000$\mu\textrm{g}$/plate의 범위에서 농도 의존적인 돌연변이 율의 증가를 관찰할 수 없었다. 또한 포유동물 세포인 Chinese hamster lung (CHL) fibroblast를 이용한 염색체 이상 시험에서 pretilachlor는 대사 활성계 존재 및 부재시 1.56-6.24$\mu\textrm{g}$/mL의 농도에서 clastogenicity를 보이지 않았고, 137.5-550.1 mg/kg의 pretilachlor를 복강 주사한 마우스의 골수세포를 이용한 in vivo소핵 시험의 결과에서도 통계적으로 유의한 소핵 유발능을 관찰할 수 없었다었다

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
• /
• pp.37-38
• /
• 2000

The ZnS:Tb thin-film electroluminescent devices were grown by atomic layer deposition with utilizing single-layer aluminum oxide and/or multilayered tantalum aluminum oxide, $Ta_xAl_yO$, as upper and lower insulating layers. These devices were investigated in terms of the luminescent and electrical characteristics. From this analysis, the devices using the $Ta_xAl_yO$ instead of $Al_2O_3$ were observed to have a lower threshold voltage for emission due to the higher relative dielectric constant of $Ta_xAl_yO$ insulators than that of the $Al_2O_3$ device. And there was a large amount of dynamic space charge generation in the phosphor of the device with the $Ta_xAl_yO$ insulators seemingly due to electron multiplication such as trap ionization.

• Environmental Analysis Health and Toxicology
• /
• 제21권4호
• /
• pp.317-322
• /
• 2006

We have investigated the genotoxicity of 1,2,4-trimethylbenzene using Ames reverse mutation test. In Ames reverse mutation test, 1,2,4-trimethylbenzene treatment at the dose of 100, 50, 25, 12.5, $6.25{\mu}g/plate$ did not induce mutagenicity in Salmonella typhimurium TA98, TA100, TA1535, TA1537 and in Escherichia coli WP2uvrA with and without metabolic activation. These results indicate that 1,2,4-trimethylbenzene has no mutagenic potential under the rendition in this study.

• 한국세라믹학회지
• /
• 제37권3호
• /
• pp.240-246
• /
• 2000

The microwave dielectric properties of the complex perovskite (Pb0.5Ca0.5)(Fe0.5Ta0.5)O3 ceramics were investigated with the porosity and the dielectric mixing rule. Assuming that the specimens were mixtures of real dielectrics and pores, with 3-0 connectivity, the ionic polarizabilities modified by Maxwell's equation were more close to the theoretical values rather than those modified by Wiener's equation in porous specimens. The theoretical dielectirc loss were obtained with the infrared reflectivity spectra from 50 to 4000cm-1, which were calculated by Kramers-Kronig analysis and classical osciallator model. The relative tendency of dielectric loss calculated from the theoretical value and Maxwell's equation in the specimens with different porosities was in good agreement with the one by the post resonant method.

• 한국표면공학회지
• /
• 제33권4호
• /
• pp.251-260
• /
• 2000

Ta and Hf added Ti-l5Sn-4Nb alloys without V and Al elements for biomaterial were melted by arc furnace in response to recent concerns about the long term safety of Ti-6Al-4V alloy. All specimens were homogenized at $1000^{\circ}C$ and solution treatment was performed at $812^{\circ}C$ and aging treatment at $500^{\circ}C$. The microstructure and mechanical properties were analysed by optical micrograph, hardness tester and instron. Ti-l5Sn-4Nb system alloys showed widmanstatten microstructure which is typical microstructure in $\alpha$＋$\beta$ type Ti alloys. The Ti-l5Sn-4Nb-2Hf and Ti-l5Sn-4Nb-2Ta alloys showed better hardness and tensile strength compared with Ti-6Al-4V. The result of XPS analysis, Ti-l5Sn-4Nb alloy in air atmosphere consisted of $TiO_2$, SnO and NbO.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.239-240
• /
• 2008

As semiconductor devices are scaled down for better performance and more functionality, the Cu-based interconnects suffer from the increase of the resistivity of the Cu wires. The resistivity increase, which is attributed to the electron scattering from grain boundaries and interfaces, needs to be addressed in order to further scale down semiconductor devices [1]. The increase in the resistivity of the interconnect can be alleviated by increasing the grain size of electroplating (EP)-Cu or by modifying the Cu surface [1]. Another possible solution is to maximize the portion of the EP-Cu volume in the vias or damascene structures with the conformal diffusion barrier and seed layer by optimizing their deposition processes during Cu interconnect fabrication, which are currently ionized physical vapor deposition (IPVD)-based Ta/TaN bilayer and IPVD-Cu, respectively. The use of in-situ etching, during IPVD of the barrier or the seed layer, has been effective in enlarging the trench volume where the Cu is filled, resulting in improved reliability and performance of the Cu-based interconnect. However, the application of IPVD technology is expected to be limited eventually because of poor sidewall step coverage and the narrow top part of the damascene structures. Recently, Ru has been suggested as a diffusion barrier that is compatible with the direct plating of Cu [2-3]. A single-layer diffusion barrier for the direct plating of Cu is desirable to optimize the resistance of the Cu interconnects because it eliminates the Cu-seed layer. However, previous studies have shown that the Ru by itself is not a suitable diffusion barrier for Cu metallization [4-6]. Thus, the diffusion barrier performance of the Ru film should be improved in order for it to be successfully incorporated as a seed layer/barrier layer for the direct plating of Cu. The improvement of its barrier performance, by modifying the Ru microstructure from columnar to amorphous (by incorporating the N into Ru during PVD), has been previously reported [7]. Another approach for improving the barrier performance of the Ru film is to use Ru as a just seed layer and combine it with superior materials to function as a diffusion barrier against the Cu. A RulTaN bilayer prepared by PVD has recently been suggested as a seed layer/diffusion barrier for Cu. This bilayer was stable between the Cu and Si after annealing at $700^{\circ}C$ for I min [8]. Although these reports dealt with the possible applications of Ru for Cu metallization, cases where the Ru film was prepared by atomic layer deposition (ALD) have not been identified. These are important because of ALD's excellent conformality. In this study, a bilayer diffusion barrier of Ru/TaCN prepared by ALD was investigated. As the addition of the third element into the transition metal nitride disrupts the crystal lattice and leads to the formation of a stable ternary amorphous material, as indicated by Nicolet [9], ALD-TaCN is expected to improve the diffusion barrier performance of the ALD-Ru against Cu. Ru was deposited by a sequential supply of bis(ethylcyclopentadienyl)ruthenium [Ru$(EtCp)_2$] and $NH_3$plasma and TaCN by a sequential supply of $(NEt_2)_3Ta=Nbu^t$ (tert-butylimido-trisdiethylamido-tantalum, TBTDET) and $H_2$ plasma. Sheet resistance measurements, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES) analysis showed that the bilayer diffusion barriers of ALD-Ru (12 nm)/ALD-TaCN (2 nm) and ALD-Ru (4nm)/ALD-TaCN (2 nm) prevented the Cu diffusion up to annealing temperatures of 600 and $550^{\circ}C$ for 30 min, respectively. This is found to be due to the excellent diffusion barrier performance of the ALD-TaCN film against the Cu, due to it having an amorphous structure. A 5-nm-thick ALD-TaCN film was even stable up to annealing at $650^{\circ}C$ between Cu and Si. Transmission electron microscopy (TEM) investigation combined with energy dispersive spectroscopy (EDS) analysis revealed that the ALD-Ru/ALD-TaCN diffusion barrier failed by the Cu diffusion through the bilayer into the Si substrate. This is due to the ALD-TaCN interlayer preventing the interfacial reaction between the Ru and Si.

• 한국연소학회지
• /
• 제18권1호
• /
• pp.1-6
• /
• 2013

Authors' previous works on thermoacoustic(TA) model development showed good results in predicting combustion instability characteristics in a gas turbine combustor. However, they also suggested there were some limitations in growth rate estimation, which might be related with over-simplification of flame structure. As a first trial for improving the model accuracy, the current paper introduces the modified TA model considering the actual flame location in the combustor. The combustor is divided into the unburned and the burned area before and after the flame location, and then acoustic equations are re-organized. The modified TA model results show a better accuracy in predicting the growth rate of instabilities comparing with the previous results. However, obtained results still overestimate the conditions where the combustor goes unstable. Further researches considering heat release distribution through flames are required.