• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.175-180
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• 1997

새로운 복합페로브스카이트계 고용체 (1-x)Ba(Mg1/3Ta2/3)O3-xLa(Mg2/3Ta1/3)O3(x=0.0-1.0)를 설계하고 조성에 따른 고용체의 결정구조의 변화 및 MPB(Morphotropic Phase Boundary)를 분말 XRD를 이용하여 분석하였다. 초격자회절선의 변화로부터 MBT에 10mol%의 LMT를 치환함에 따라 1:2에서 1:1로의 규칙화타입의 전이가 일어남을 알 수 있었다. 면심입방정구조 영역(0.10.8조성의 경우, 주회절선의 피이크분리 및 새로운 회절선들로부터 격자비틀림의 형태가 단사정임을 알 수 있었다.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.39 no.6
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• pp.1-1
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• 2002

In this paper, we focus on comparison and analysis of performance for existing Topology Aggregation algorithm. For these, we designed and implemented PNNI routing simulator which contain various TA schemes, and evaluate performance of TA schemes by this simulator. The PNNI 1.0 specification of the ATM Forum is recommended that hierarchical routing protocol and topology information is aggregated in the network constructed hierarchically Aggregating topology information is known as TA(Topology Aggregation) and TA is very important for scalability and security in network. Therefore, the performance of PNNI network would vary with TA schemes and routing algorithm. PNNI routing simulator can be applied to develope Routing algorithm and TA algorithm and can be develope these algorithms in short period.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.41-46
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• 2002

In this work, we studied electrical characteristics and leakage current mechanism of Au/$Ta_2O_5$/Si metal-oxide-semiconductor (MOS) devices. $Ta_2O_5$ thin film (63nm) was deposited by atomic layer deposition (ALD) method at temperature of $235^{\circ}C$. The structures of the $Ta_2O_5$ thin films were examined by X-Ray Diffraction (XRD). From XRD, the structure of $Ta_2O_5$ was single phase and orthorhombic. From capacitance-voltage (C-V) analysis, the dielectric constant was 19.4. The temperature dependence of current-voltage (I-V) characteristics of $Ta_2O_5$ thin film was studied from 300 to 423 K. In ohmic region (<0.5 MVcm${-1}$), the resistivity was $2.4056{\times}10^{14}({\Omega}cm)$ at 348 K. The Schottky emission is dominant in lower temperature range from 300 to 323 K and Poole-Frenkel emission dominant in higher temperature range from 348 to 423 K.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.157-159
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• 2005

MOS capacitors were fabricated to study electrical and chemical properties of Ta-Mo metal alloy with $ZrO_2$. The work function of Ta-Mo alloy were varied from 4.1eV to 5.1eV by controlling the composition. When the atomic composition of Mo is 10%, good thermal stability up to $800^{\circ}C$ was observed and work function of MOS capacitor was 4.1eV, compatible for NMOS application. But pure Ta exhibited very poor thermal stability. After $600^{\circ}C$ annealing, equivalent oxide thickness of tantalum gate MOS capacitor was continuously decreased. Barrier heights of Ta-Mo alloy and pure metal that supported the work function values were calculated from Fowler-Nordheim analysis. As a result of these electrical?experiments, Ta-Mo metal alloy with $ZrO_2$ is excellent gate electrode for NMOS.

• Journal of the Korean Society of Radiology
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• v.12 no.2
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• pp.133-138
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• 2018

The measurement of gamma-ray spectrum of $^{nat}W(p,xn)$ reaction with natural tungsten were performed by using a high energy proton generated from a 100-MeV proton linear accelerator of the Korea Multi-purpose Accelerator Complex (KOMAC). Gamma rays generated by various nuclides generated through the nuclide were measured using a gamma-ray spectroscopy system composed of HPGe detector. A gamma-ray standard source was used for energy calibration and efficiency measurement of the detector. Analysis of the gamma rays observed in the measured spectra showed that the radionuclides produced were $^{167}Re$, $^{178}Re$, $^{179}Re$, $^{180}Re$, $^{181}Re$, $^{182}Re$, $^{184}Re$, $^{172}Ta$, $^{174}Ta$, $^{178}Ta$, $^{182}Ta$, $^{184}Ta$, $^{175}W$, $^{176}W$, $^{177}W$ and $^{179}W$. Nuclides were generated. The results of this study will be applied to nuclear fusion, astrophysics, and nuclear medicine applications in the future.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.05a
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• pp.139-145
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• 2005

In the study, in order to deposit TaN thin film using diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristic of TaN thin films deposited PAALD method, PAALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamlno) tantalum) Precursor and $NH_3$ reaction gas is aware that TaN thin film deposited of high density and amorphous phase with XRD measurement The degree of diffusion and react ion taking place in Cu/TaN(deposited using 150 W PAALD)/$SiO_2$/Si systems with increasing annealing temperature was estimated from MOS capacitor property and the $SiO_2(600\;\AA)$/Si system surface analysis by C-V measurement and secondary ion material spectrometer(SIMS) after Cu/TaN/$SiO_2(400\;\AA)$ system etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to $500^{\circ}C$.

• Journal of the Semiconductor & Display Technology
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• v.4 no.2 s.11
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• pp.39-43
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• 2005

In the study, in order to deposit TaN thin film for diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristics of TaN thin films grown PAALD method. Plasma Assisted ALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamino) tantalum) precursor and NH3 reaction gas is shown that TaN thin film deposited high density and amorphous phase with XRD measurement. The degree of diffusion and reaction taking place in Cu/TaN (deposited using 150W PAALD)/$SiO_{2}$/Si systems with increasing annealing temperature was estimated for MOS capacitor property and the $SiO_{2}$, (600${\AA}$)/Si system surface analysis by C-V measurement and secondary ion material spectrometer (SIMS) after Cu/TaN/$SiO_{2}$ (400 ${\AA}$) layer etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to 500$^{\circ}C$.

• Membrane and Water Treatment
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• v.7 no.3
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• pp.257-275
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• 2016

The enantiomeric and racemic effects of tartaric acid (TA) on the properties of polysulfone (PSn) ultrafiltration membranes were studied in terms of morphology and hydrophilicity (HPCT) of membrane. Asymmetric membranes were prepared by direct blending of polyvinyl pyrrolidone (PVP) with D-TA and DL-TA in membrane casting solution. FTIR analysis was done for the confirmation of the reaction of PVP and TA in blended membranes and plain PSn membranes. Scanning electron microscope (SEM), field emission scanning electron microscope (FESEM) and atomic force microscopy (AFM) were used for analyzing the morphology and structure of the resulting membranes. The membranes were characterized in terms of pure water flux (PWF), hydraulic permeability and HPCT. PWF increased from $52L/m^2h$ to $79.9L/m^2h$ for plain and D-TA containing PSn membrane, respectively. Water contact angle also found to be decreased from $68^{\circ}$ to $55^{\circ}$. In Additionally, permeation and rejection behavior of prepared membranes was studied by bovine serum albumin (BSA) solution. A considerable increase in BSA flux (from $19.1L/m^2h$ for plain membrane to $32.1L/m^2h$ for D-TA containing membrane) was observed. FESEM images affirm that the pore size of the membranes decreases and the membrane permeability increases from 0.16 to 0.32 by the addition of D-TA in the membrane. D-TA increases the HPCT whereas; DL-TA decreases the HPCT of PSn membrane. PVP (average molecular weight of 40000 Da) with D-TA (1 wt%) gave best performance among all the membranes for each parameter.

• Journal of the Korean Ceramic Society
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• v.32 no.5
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• pp.582-586
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• 1995

The crystal structures of (Na0.3Sr0.7)(Ti0.7M0.3)O3 (M=Ta, Nb) compounds were determined using the Rietveld method. Due to the tilting of a oxygen octahedron, (Na0.3Sr0.7)(Ti0.7Nb0.3)O3 had a superlattice of doubled a, b and c of simple perovskite. The crystal structure of (Na0.3Sr0.7)(Ti0.7M0.3)O3 was tetragonal with a space group 14/mmm. The crystal structure of (Na0.3Sr0.7)(Ti0.7M0.3)O3 was a cubic with space group Pm3m, in which no tilting of oxygen octahedron was observed. The difference in the oxygen tilting of these two materials was due to the larger covalency of Nb-O bond than that of Ta-O bond, which induced a strong $\pi$Nb0 bonding in (Na0.3Sr0.7)(Ti0.7M0.3)O3. Therefore, the higher transition temperature of (Na0.3Sr0.7)(Ti0.7M0.3)O3 could be related to the larger tilting of oxygen octahedron.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.135-135
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• 1999

It is well known that Raman spectroscopy is powerful tool in analysis of sp3/sp3 bonding fraction in diamond-like carbon(DLC) films. Raman spectra of DLC film is composed of D-peak centered at 1350cm-1 and G-peak centered at 1530cm-1. The sp3/sp3 fraction is qualitatively acquired by deconvolution method. However, in case of DLC film, it is generally observed that G-peak position shifts toward low wavenumber as th sp3 fraction increases. However, opposite results were frequently observed in ta-C films. ta-C film has much higher residual compressive stress due to its high sp3 fraction compared to the DLC films deposited by CVD method. Effect of residual stress on G-peak position is most recommendable parameter in Raman analysis of ta-C, due to its smallest fitting error among many parameters acquired by peak deconvolution of symmetric spectra. In current study, the effect of residual stress on Raman spectra was quantitatively evaluated by free-hang method. ta-C films of different residual stress were deposited on Si-wafer by modifying DC-bias voltage during deposition. The variation of the G-peak position along the etching depth were observed in the free-hangs of 20~30${\mu}{\textrm}{m}$ etching depth. Mathematical result based on Airy stress function, was compared with experimental results. The more reliable analysis excluding stress-induced shift was possible by elimination of the Raman shift due to residual compressiove stress.