• E2M - 전기 전자와 첨단 소재
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• 제7권5호
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• pp.383-388
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• 1994

Deep levels in semi-insulating GaAs were observed by thermally stimulated current(TSC) measurement In the temperature ranges of 100-300K Tl(E$\_$c/-0.18eV), T2(E$\_$c/-0.20eV), T3(E$\_$c/-0.31eV), T4(E$\_$c/-0.40eV), and T5(E$\_$c/-O.43eV) traps have been observed. The TI, T2, and T5 traps seem to be related to the V$\_$As/, V$\_$Ga/-complex, and As$\_$Ga/$\^$++/ respectively. T4 trap is considered with respect to V$\_$Ga/-V$\_$As/ complex.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2004년도 추계학술대회 논문집
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• pp.233-244
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• 2004

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_2O_3$)substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}\;cm^{-3}$ and $299\;{\textrm}cm^2/V.s$ at 293K. respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;3.3973\;eV\;-\;(2.69{\times}10^{-4}\;eV/K)T^2/(T+463K)$. After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{zn},\;Vo,\;Zn_{int},\;and\;O_{int}$ obtained by PL measurements were classified as a donors or acceptors type. In addition, we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in $ZnO/Al_2O_3$ did not form the native defects because vacuum in ZnO thin films existed in the form of stable bonds.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2001년도 추계종합학술대회
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• pp.652-655
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• 2001

Power transformers are increasingly becoming more significant in the advancement of electronic equipment. A high-performance, low-cost core material is necessary in order th come up with power transformers in the smallest and lightest scale possible and with low power requirements. In this study, we added V$_2$O$_{5}$ and CaCo$_3$to Mn-Zn ferrite to produce a high-performance low-cost core material. The compositions used were MnO : ZnO : Fe$_2$O$_3$= 37 : 11 : 52 mol%. The materials were sintered at 125$0^{\circ}C$ for three hours. Initial permeability was measured at 0.1MHz. At 200mT, power loss was measured by changing the temperature at 25KHz, 50KHz, 100KHz. When we added 0.lwt% and 0.1%wt% of V$_2$O$_{5}$와 CaCo$_3$, respectively we obtained 405 405KW/㎥ at 200mT, 100KHz, 6$0^{\circ}C$. We tan reduce eddy current loss as a primary loss of high frequency by adding a small amount of V$_2$O$_{5}$와 CaCo$_3$. This reduces power loss in the power transformersormers

• 한국표면공학회지
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• 제39권2호
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• pp.49-56
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• 2006

In this study, the movable flame hardening process of 12Cr steel for a uniform hardness and desirable residual stress have been investigated. For this, the temperature cycles have been controlled accurately as a function of the three processing variables, the flame intensity $I_f$, the scanning velocity $V_s$, and the initial flame holding time $t_h$, where the standard surface temperature $T_{s,\;max}$, was maintained at $960^{\circ}C$. The optimized conditions were $V_s=0.68mn/s\;and\;t_h=67sec$ for the $C_3H_8:O_2\;=\;5:20l/min,\;V_s=0.80mm/s$ and $t_h=56sec$ for the $C_3H_8:O_2=6:24l/min,\;V_s=1.01mm/s\;and\;t_h=48sec$ for the $C_3H_8:O_2=7:28l/min,\;and\;V_s=1.15mm/s$ and $t_h=39sec$ for the $C_3H_8:O_2$=8:32 l/min. The optimally flame-hardened surface exhibited uniform distributions of the hardness and residual compressive stress over the treated area with moderate levels of $470{\sim}490HV_{0.2}$in hardness and $-300{\sim}-450MPa$ in residual stress, which were acceptable on the basis of the acceptance criteria of Siemens AG-KWU and GE Power Generation Engineering.

• Transactions on Electrical and Electronic Materials
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• 제18권6호
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• pp.311-315
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• 2017

The perovskite system $(Ba^{2+}{_{1-x}}La^{3+}{_x})Fe^{3+}{_{1-t}}Fe^{4+}{_t}O_{3-y}$ (y = (1 - x --t)/2) having a composition of x = 0.0, 0.1, 0.2, and 0.3 showedean increase in $Fe^{4+}$ mole ratios with an increase in oxygen partial pressure ($N_2{\rightarrow}air{\rightarrow}O_2$), and with an increasefin s, the $Fe^{3+}$ quantity decreased and oxygen content (3-y value) increased. For each N sampls heat-treated in $N_2$ gas, a considerable weight gain, i.e.g a steadynincrease if oxygen content, was observed in the TGA data on the cooling process. The conductivity values at a constant temperature were in the order of $N_2$$O_2$; the respective log ${\sigma}$ values (${\Omega}^{-1}{\cdot}cm^{-1}$) at 323 K of the BL0 sample were -5.75 (BL0-N), -3.39 (BL0-A), and -0.53 (BL0-O). The mixed valencies of $Fe^{3+}$ and $Fe^{4+}$ ions in each sample were also confirmed by both the oxidation curve above 350 mV and the cathodic reduction curve below 200 mV from cyclic voltammetry.

• 대한화학회지
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• 제24권4호
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• pp.269-279
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• 1980

$t^2_2$ 전자배치를 가진 팔면체 및 일그러진 팔면체 $[V(III)A_3B_3]$형태 착물에 대한 자기모멘트를 계산하는 새로운 방법을 발전시켰다. [A 와 B = O, Cl, N, F 또는 Br]. 이 방법에 의하여 계산한 자기모멘트가 실험치와 비교적 잘 일치한다. 일그러진 팔면체 $[V(III)A_3B_3]$형태 착물의 계산한 자기모멘트는 tetragonal distortion의 크기가 증가함에 따라 감소한다. 자기모멘트에 대한 k (orbital reduction factor), $\xi'$ 및 온도의 영향을 또한 고찰하였다. 쌍극자모멘트 및 편극율에 대한 $^3T_1$ 분자궤도함수의 기여분을 계산하는 새로운 방법을 발전시켰다. 이 방법에 의하여 계산한 $^3T_1$ 분자궤도함수의 기여분은 합리적인 범위안에 들었다.

• 한국전기전자재료학회논문지
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• 제30권5호
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• pp.284-287
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• 2017

The electrocaloric effect in $0.94(Bi_{0.5}Na_{0.5})TiO_3+0.06KNbO3+0.9wt%$ G.F.ferroelectricceramics was observed in terms of the temperature change (${\Delta}T$) of the fabricated ceramics, Curie temperature $T_c$, and applied electric field. The specimens were fabricated by a conventional solid-state reaction. $T_c$ appeared near $165{\sim}170^{\circ}C$. The P-E hysteresis showed a tendency to slim down with a temperature increase and finally was slimmest near $150^{\circ}C$. With the increase of temperature, the polarization revealed a gradual decrease, and a sharp decline near $T_c$. When an electric field of 45 kV/cm was applied, the largest polarization was shown. The maximum value of the temperature change (${\Delta}T=0.31^{\circ}C$) was obtained at $165^{\circ}C$ under an applied electric field of 45 kV/cm.

• 한국세라믹학회지
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• 제22권3호
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• pp.53-59
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• 1985

Nucleation and crystallization of $\beta$-eucryptite in a glass of molecular percentage composition Li2O.Al2O3.2SiO2 are studied. The glasses are made by quenching of the melts from 143$0^{\circ}C$ to room temperature. Heat-treatment for nucleation and crystal growth are caried out at various temperature in the range between 50$0^{\circ}C$ and 80$0^{\circ}C$ with different duration of time. The amounts of crystallization are estimated by the method of x-ray powder diffraction. As the results a time-temperature-transformation relation for crystallization is derived. The maximum rate of crystallization is observed at about 75$0^{\circ}C$ from the T-T-T-curve while the crystallization temperature is detected at 67$0^{\circ}C$ by DTA measurement. The crystallization temperature moved to 62$0^{\circ}C$ by adding 5 weight percents of TiO2 and it moved to 78$0^{\circ}C$ by adding 2 weight percents of V2O5. The crystallization temperature moved to 62$0^{\circ}C$ by adding 5 weight percent of TiO2 it moved to 78$0^{\circ}C$ by adding 2 weight percents of V2O5 The activation energy for crystallization from the pure glass is calculated as 68 Kcal/mol and it varied to 53 Kcal/mol and 110Kcal/mol when 5 weight percents of TiO2 and weight percents of V2O5 are added respectively.

• 한국세라믹학회지
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• 제41권11호
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• pp.858-863
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• 2004

본 연구는 입방정 L $a_{2}$ 3/Ti $O_{2.84}$ 세라믹스의 전기전도율, 열기전력 그리고 자기적 특성에 대하여 조사하였다. 350 K 이하의 은도영역에서의 입방정 L $a_{2}$ 3/Ti $O_{2.84}$ 세라믹스의 열기전력은 음으로 나타났다 열기전력은 온도의 증가와 더불어 선형적으로 증가하여 A+BT의 형태로 표현가능 하였으며, Emin과 Wood가 제안한 모델과 잘 일치하였다. 이와 같은 열기전력의 온도의존성은 L $a_{2}$ 3/Ti $O_{2.84}$ 세라믹스의 전도 carrier가 small polaron임을 의미한다. L $a_{2}$ 3/Ti $O_{2.84}$ 세라믹스는 실온 이하의 특정온도에서 variable range hopping에서 small polaron hopping으로 변화하였다. 저온영역에서는 직류전도 기구해석은 Mott의 접근방식을 이용하였다. Mott의 보조변수 해석결과 Fermi면에서의 상태밀도 [N( $E_{F}$)]는 3.18${\times}$$10^{20}$ $cm^{-3}$e $V^{-1}$이었으며, 무질서에너지 $W_{d}$는 0.93로 고온에서의 활성화 에너지 보다 매우 크다. 200K와 300K온도 범위에서 log($\sigma$T)와 1/T의 직선 관계가 존재 하였으며, small polaron의 hopping energy는 0.15 eV였다.

• Environmental Engineering Research
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• 제10권1호
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• pp.31-37
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• 2005

The selective catalytic experiments using both sulfated/sulfur-free titania and V2O5/TiO2 catalysts have been conducted for NO reduction by NH3 in a packed-bed, down-flow reactor. The sulfated and vanadia loaded titania exhibited higher activity for NO removal than the sulfur-free catalysts, where > 90% NO removal was achieved over the sulfated V2O5/TiO2 catalyst between 280∼500 C. The surface structure of vanadia species on the catalyst surface played a critical role in the high performance of catalysts in which the existence of monomeric/polymeric vanadate is revealed by Raman spectra studies. Water vapor and SO2 were added to the reacting system for the catalyst deactivation tests. At higher temperatures (T ≥ 350 C), little deactivation was observed over the sulfated V2O5/TiO2 catalysts, showing good durability against SO2 and water vapor, which is compared with deactivation at lower temperatures.