• Journal of Intelligence and Information Systems
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• v.18 no.3
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• pp.79-96
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• 2012

As the pace of competition dramatically accelerates and the complexity of change grows, a variety of research have been conducted to improve firms' short-term performance and to enhance firms' long-term survival. In particular, researchers and practitioners have paid their attention to identify promising technologies that lead competitive advantage to a firm. Discovery of promising technology depends on how a firm evaluates the value of technologies, thus many evaluating methods have been proposed. Experts' opinion based approaches have been widely accepted to predict the value of technologies. Whereas this approach provides in-depth analysis and ensures validity of analysis results, it is usually cost-and time-ineffective and is limited to qualitative evaluation. Considerable studies attempt to forecast the value of technology by using patent information to overcome the limitation of experts' opinion based approach. Patent based technology evaluation has served as a valuable assessment approach of the technological forecasting because it contains a full and practical description of technology with uniform structure. Furthermore, it provides information that is not divulged in any other sources. Although patent information based approach has contributed to our understanding of prediction of promising technologies, it has some limitations because prediction has been made based on the past patent information, and the interpretations of patent analyses are not consistent. In order to fill this gap, this study proposes a technology forecasting methodology by integrating patent information approach and artificial intelligence method. The methodology consists of three modules : evaluation of technologies promising, implementation of technologies value prediction model, and recommendation of promising technologies. In the first module, technologies promising is evaluated from three different and complementary dimensions; impact, fusion, and diffusion perspectives. The impact of technologies refers to their influence on future technologies development and improvement, and is also clearly associated with their monetary value. The fusion of technologies denotes the extent to which a technology fuses different technologies, and represents the breadth of search underlying the technology. The fusion of technologies can be calculated based on technology or patent, thus this study measures two types of fusion index; fusion index per technology and fusion index per patent. Finally, the diffusion of technologies denotes their degree of applicability across scientific and technological fields. In the same vein, diffusion index per technology and diffusion index per patent are considered respectively. In the second module, technologies value prediction model is implemented using artificial intelligence method. This studies use the values of five indexes (i.e., impact index, fusion index per technology, fusion index per patent, diffusion index per technology and diffusion index per patent) at different time (e.g., t-n, t-n-1, t-n-2, ${\cdots}$) as input variables. The out variables are values of five indexes at time t, which is used for learning. The learning method adopted in this study is backpropagation algorithm. In the third module, this study recommends final promising technologies based on analytic hierarchy process. AHP provides relative importance of each index, leading to final promising index for technology. Applicability of the proposed methodology is tested by using U.S. patents in international patent class G06F (i.e., electronic digital data processing) from 2000 to 2008. The results show that mean absolute error value for prediction produced by the proposed methodology is lower than the value produced by multiple regression analysis in cases of fusion indexes. However, mean absolute error value of the proposed methodology is slightly higher than the value of multiple regression analysis. These unexpected results may be explained, in part, by small number of patents. Since this study only uses patent data in class G06F, number of sample patent data is relatively small, leading to incomplete learning to satisfy complex artificial intelligence structure. In addition, fusion index per technology and impact index are found to be important criteria to predict promising technology. This study attempts to extend the existing knowledge by proposing a new methodology for prediction technology value by integrating patent information analysis and artificial intelligence network. It helps managers who want to technology develop planning and policy maker who want to implement technology policy by providing quantitative prediction methodology. In addition, this study could help other researchers by proving a deeper understanding of the complex technological forecasting field.

• Journal of Sensor Science and Technology
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• v.13 no.2
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• pp.157-167
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• 2004

A stoichiometric mixture of evaporating materials for $CuAlSe_{2}$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuAlSe_{2}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuAlSe_{2}$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}cm^{-3}$ and $295cm^{2}/V{\codt}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_{2}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$ = 2.8382 eV - ($8.68{\circ}10^{-4}$ eV/K)$T^{2}$/(T + 155 K). The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_{2}$ have been estimated to be 0.2026 eV and 0.2165 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_{5}$ states of the valence band of the $CuAlSe_{2}$. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1-}$, $B_{1-}$, and $C_{1-}$ exciton peaks for n = 1.

• Journal of Agricultural Extension & Community Development
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• v.21 no.1
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• pp.35-82
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• 2014

It was main objectives to find the learners characteristics and educational effects of cyber agricultural technology courses in RDA. For the research, it was followed by literature reviews and internet based survey methods. In internet based survey, two staged stratified sampling method was adopted from cyber training members database in RDA along with some key word as open course or certificate course, and enrollment years. Instrument was composed through literature reviews about cyber education effects and educational effect factors. And learner characteristics items were added in survey documents. It was sent to sampled persons by e-mail and 316 data was returned via google survey systems. Through the data cleaning, 303 data were analysed by chi-square, t-test and F-test. It's significance level was .05. The results of the research were as followed; First, the respondent was composed of mainly man(77.9%), and monthly income group was mainly 2,000,000 or 3,000,000 won(24%), bachelor degree(48%), fifty or forty age group was shared to 75%, and their job was changed after learning(12.2%). So major respondents' job was not changed. Their major was not mainly agriculture. Learners' learning style were composed of two or more types as concrete-sequential, mixing, abstract-random, so e-learning course should be developed for the students' type. Second, it was attended at 3.2 days a week, 53.53 minutes a class, totally 172.63 minutes a week. They were very eager or generally eager to study, and attended two or more subjects. The cyber education motives was for farming knowledge, personal competency development, job performance enlarging. They selected subjects along with their interest. A subject person couldn't choose more subjects for little time, others, non interesting subject, but more subject persons were for job performance benefits and previous subjects effectiveness. Most learner was finished their subject, but a fourth was not finished for busy (26.7%). And their entrying behavior was not enough to learn e-course and computer or internet using ability was middle level as software using. And they thought RDA cyber course was comfort in non time or space limit, knowledge acquisition, and personal competency development. Cyber learning group was composed of open course only (12.5%), certificate only(25.7%), both(36.3%). Third, satisfaction and academic achievement of e-learning learners were good, and educational service offering for doing job in learning application category was good, but effect of cyber education was not good, especially, agricultural income increasing was not good because major learner group was not farmer, so they couldn't apply their knowledge to farming. And content structure and design, content comprehension, content amount were good. The more learning subject group responded to good in effects, and both open course and certificate course group satisfied more than open course only group. Based on the results, recommendation was offered as cyber course specialization before main course in RDA training system, support staff and faculty enlargement, building blended learning system with local RDA office, introducing cyber tutor system.

• Journal of Sensor Science and Technology
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• v.11 no.5
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• pp.309-318
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• 2002

A stoichiometric mixture of evaporating materials for $CdIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CdIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdIn_2S_4$ single crystal thin films measured with Hall effect by van der Pauw method are $9.01{\times}10^{16}\;cm^{-3}$ and $219\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CdIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.7116\;eV-(7.74{\times}10^{-4}\;eV)T^2/(T+434)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CdIn_2S_4$ have been estimated to be 0.1291 eV and 0.0248 eV, respectively, by means of the photocurrent spectra and the Hopfield quasi cubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}5$ states of the valence band of the $AgInS_2$/GaAs epilayer. The three photocurrent peaks observed at 10K areascribed to the $A_1$-, $B_1$-, and C1-exciton peaks for n = 1.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.5
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• pp.217-224
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• 2008

A stoichiometric mixture of evaporating materials for $ZnIn_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $ZnIn_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $ZnIn_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $9.41\times10^{16}cm^{-3}$ and $292cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $ZnIn_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.8622eV-(5.23\times10^{-4}eV/K)T^2/(T+775.5K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $ZnIn_2Se_4$ have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $ZnIn_2Se_4/GaAs$ epilayer. The three photo current peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-exciton$ for n = 1 and $C_{27}-exciton$ peaks for n = 27.

• Nuclear Engineering and Technology
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• v.53 no.9
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• pp.3068-3084
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• 2021

Investigations of large commercial aircraft impact effect on nuclear power plant (NPP) buildings have been drawing extensive attentions, particularly after the 9/11 event, and this paper aims to experimentally assess the damage and vibrations of NPP buildings subjected to aircraft crash. In present Part I, two shots of reduce-scaled model test of aircraft impacting on NPP building were carried out. Firstly, the 1:15 aircraft model (weighs 135 kg) and RC NPP model (weighs about 70 t) are designed and prepared. Then, based on the large rocket sled loading test platform, the aircraft models were accelerated to impact perpendicularly on the two sides of NPP model, i.e., containment and auxiliary buildings, with a velocity of about 170 m/s. The strain-time histories of rebars within the impact area and acceleration-time histories of each floor of NPP model are derived from the pre-arranged twenty-one strain gauges and twenty tri-axial accelerometers, and the whole impact processes were recorded by three high-speed cameras. The local penetration and perforation failure modes occurred respectively in the collision scenarios of containment and auxiliary buildings, and some suggestions for the NPP design are given. The maximum acceleration in the 1:15 scaled tests is 1785.73 g, and thus the corresponding maximum resultant acceleration in a prototype impact might be about 119 g, which poses a potential threat to the nuclear equipment. Furthermore, it was found that the nonlinear decrease of vibrations along the height was well reflected by the variations of both the maximum resultant vibrations and Cumulative Absolute Velocity (CAV). The present experimental work on the damage and dynamic responses of NPP structure under aircraft impact is firstly presented, which could provide a benchmark basis for further safety assessments of prototype NPP structure as well as inner systems and components against aircraft crash.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.6
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• pp.229-236
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• 2014

A stoichiometric mixture of evaporating materials for $MnAl_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MnAl_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MnAl_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.7920eV-5.2729{\times}10^{-4}eV/K)T^2/(T+786 K)$. In order to explore the applicability as a photoconductive cell, we measured the sensitivity (${\gamma}$), the ratio of photocurrent to dark current (pc/dc), maximum allowable power dissipation (MAPD) and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in S vapour compare with in Mn, Al, air and vacuum vapour. Then we obtained the sensitivity of 0.93, the value of pc/dc of $1.10{\times}10^7$, the MAPD of 316 mW, and the rise and decay time of 14.8 ms and 12.1 ms, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.6
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• pp.283-290
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• 2013

A stoichiometric mixture of evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MgGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.34 eV-(8.81{\times}10^{-4}eV/K)T^2/(T+251K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $MgGa_2Se_4$ have been estimated to be 190.6 meV and 118.8 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $MgGa_2Se_4$/GaAs epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-}$, $B_{1^-}$exciton for n = 1 and $C_{27}-exciton$ peaks for n = 27.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.6
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• pp.252-259
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• 2005

Single crystal $CuGaSe_2$ layers were grown on thoroughly etched semi-insulating CaAs(100) substrate at $450^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuGaSe_2$ source at $610^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence (PL) and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuGaSe_2$ thin films measured with Hall effect by Van der Pauw method are $4.87{\times}10^{17}cm^{-3}$ and $129cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.7998eV-(8.7489{\times}10^{-4}eV/K)T^2/(T+335K)$. The voltage, current density of maxiumun power, fill factor, and conversion, efficiency of $n-CdS/p-CuGaSe_2$, heterojunction solar cells under $80mW/cm^2$ illumination were found to be 0.41 V, $21.8mA/cm^2$, 0.75 and 11.17%, respectively.

• Journal of Sensor Science and Technology
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• v.23 no.1
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• pp.51-57
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• 2014

The evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MgGa_2Se_4$ compounded polycrystal powder was deposited on thoroughly etched semi-insulated GaAs(100) substrate by the hot wall epitaxy (HWE) method system. The source and substrate temperatures of optimized growth conditions, were $610^{\circ}C$ and $400^{\circ}C$, respectively.The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.34\;eV-(8.81{\times}10^{-4}\;eV/K)T^2/(T+251\;K)$. After the as-grown $MgGa_2Se_4$ single crystal thin films was annealed in Mg-, Se-, and Ga-atmospheres, the origin of point defects of $MgGa_2Se_4$ single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native defects of $V_{Mg}$, $V_{Se}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted $MgGa_2Se_4$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $MgGa_2Se_4$/GaAs did not form the native defects because Ga in $MgGa_2Se_4$ single crystal thin films existed in the form of stable bonds.