• The KIPS Transactions:PartA
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• v.9A no.1
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• pp.37-44
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• 2002

Most researches of transforming sequential programs into parallel programs have been based on the loop structure transformation method. However, most programs have implicit interprocedure parallelism. This paper suggests a way of extracting parallelism from the loops with procedure calls using the data dependency elimination method. Most parallelization of the loop with procedure calls have been conducted for extracting parallelism from the uniform code. In this paper, we propose interprocedural transformation, which can be apply to both uniform and nonuniform code. We show the examples of uniform, nonuniform, and complex code parallelization. We then evaluated the performance of the various transformation methods using the CRAY-T3E system. The comparison results show that the proposed algorithm out-performs other conventional methods.

• Journal of Sensor Science and Technology
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• v.16 no.6
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• pp.419-427
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• 2007

Single crystal $ZnIn_{2}S_{4}$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $450^{\circ}C$ with the hot wall epitaxy (HWE) system by evaporating the polycrystal source of $ZnIn_{2}S_{4}$ at $610^{\circ}C$ prepared from horizontal electric furnace. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $ZnIn_{2}S_{4}$ thin films measured with Hall effect by van der Pauw method are $8.51{\times}10^{17}\;electron/cm^{-3}$, $291{\;}cm^{2}/v-s$ at 293 K, respectively. The photocurrent and the absorption spectra of $ZnIn_{2}S_{4}$/SI(Semi-Insulated) GaAs(100) are measured ranging from 293 K to 10 K. The temperature dependence of the energy band gap of the $ZnIn_{2}S_{4}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=2.9514 eV. ($7.24{\times}10^{-4}\;eV/K$)$T^{2}$/(T+489 K). Using the photocurrent spectra and the Hopfield quasicubic model, the crystal field energy(${\Delta}cr$) and the spin-orbit splitting energy(${\Delta}so$) for the valence band of the $ZnIn_{2}S_{4}$ have been estimated to be 167.8 meV and 14.8 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1}$-, $B_{1}$-, and $C_{41}$-exciton peaks.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.6
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• pp.274-284
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• 2001

A stoichimetric mixture of evaporating materials for $AgInS_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films. $AgInS_2$mixed crystal was deposited on thorughly etched semi-insulating GaAs(100) substrate by the Hot wall Epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of $AgInS_2$ single crystal the films measured from Hall effect by van der Pauw method are $9.35\times 10^{16}/\terxtm{cm}^3$ and $294\terxtm{cm}^2$/V.s at 293 K, respectively. From the optical absorption measurement the temperature dependence of the energy band gap on AgInS$_2$ single crystal thin film was found to be $E_g$(T)= 2.1365eV-($9.89\times 10^{-3}eV/T^2$/(2930+T). After the as-grown $AgInS_2$ single crystal thin films was annealed in $Ag^-S^-$ and In-atmospheres, the origin of point defects of AgInS$_2$ single crystal the films has been investigated by using the photoluminescence(PL) at 10K. The native defects of $V_{Ag},V_s, Ag_{int}$ and $S_{int}$ int/ obtained from PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted $AgInS_2$ single crystal thin films to an optical p-type. Also, we confirmed that In in $AgInS_2$ /GaAs did not form the native defects because In is $AgInS_2$ single crystal thin films did exist in the form of stable bonds.

• Journal of Sensor Science and Technology
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• v.17 no.6
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• pp.437-446
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• 2008

Single crystalline ${ZnIn_2}{Se_4}$ layers were grown on thoroughly etched semi-insulating GaAs (100) substrate at $400^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating ${ZnIn_2}{Se_4}$ source at $630^{\circ}C$. The crystalline structure of the single crystalline thick films was investigated by the photoluminescence (PL) and Double crystalline X-ray rocking curve (DCRC). The carrier density and mobility of ${ZnIn_2}{Se_4}$ single crystalline thick films measured from Hall effect by van der Pauw method are $9.41{\times}10^{16}cm^{-3}$ and $292cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ${ZnIn_2}{Se_4}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=1.8622 eV-$(5.23{\times}10^{-4}eV/K)T^2$/(T+775.5 K). After the as-grown ${ZnIn_2}{Se_4}$ single crystalline thick films was annealed in Zn-, Se-, and In-atmospheres, the origin of point defects of ${ZnIn_2}{Se_4}$ single crystalline thick films has been investigated by the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_{Se}$, $Zn_{int}$, and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted ${ZnIn_2}{Se_4}$ single crystalline thick films to an optical p-type. Also, we confirmed that In in ${ZnIn_2}{Se_4}$/GaAs did not form the native defects because In in ${ZnIn_2}{Se_4}$ single crystalline thick films existed in the form of stable bonds.

• Analytical Science and Technology
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• v.18 no.3
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• pp.194-200
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• 2005

The N hyperfine coupling constants ($a_N$) of di-t-butyl nitroxide (DTBN) radicals in water-solvent system were measured with EPR spectroscopy. Various kinds of the solvents with different polarity such as acetone, dimethylsulfoxide (DMSO), methanol, ethanol and 1-propanol were applied and studied. Equilibrium constants for the solvation equilibrium and the solvent parameters ($E_T$, molar transition energy) of various water-solvent system were obtained from the experimental results and are presented. The $a_N$ values were plotted as a function of mole fraction of the solvent. In case of water-DMSO, water-ethanol and water-1-propanol system, slight negative deviations from the straight line were observed. In water-acetone system, the absorption wavelength (${\lambda}$) due to ${\eta}{\rightarrow}{\pi}^{\ast}$ transition increased linearly with the increase of mole fraction of acetone. The relationship between $a_N$ of DTBN and ${\lambda}$ due to ${\eta}{\rightarrow}{\pi}^{\ast}$ transition in water-acetone and water-DMSO system was examined. It was found that the electronic structure of the nitroxide radicals is stablized from the fact that the N hyperfine coupling constants of DTBN radicals are greatly unaffected in the environment of water-solvent system.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.13 no.3
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• pp.30-36
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• 2004

The exchange of model design data among heterogeneous CAD systems is very difficult because each CAD system has different data structures suitable for its own functions. STEP represents product information in a common computer-interpretable form that is required to remain complete and consistent when the product information is needed to be exchanged among different computer systems. However, STEP has complex architecture to represent point, line, curve and vectors of element. Moreover it can't represent geometry data of feature based models. In this study, a structure of XML document that represents geometry data of feature based models as neutral format has been developed. To use the developed XML document, a converter also has been developed to exchange modules so that it can exchange feature based data models among heterogeneous CAD systems. Developed XML document and Converter have been applied to commercial CAD systems.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2002.02a
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• pp.231-238
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• 2002

미세 절삭에 의한 마이크로 형상가공 및 이를 이용한 미세금형 가공기술개발을 위하여 절삭 공구를 이용한 기계적 미세 가공법에 대한 고찰과 더불어 shaping, end-milling, drilling 등의 가공이 가능한 기계적 미세 가공시스템을 구성하고 이를 이용한 미세 치형 그루브와 미세 격벽 등 미세 형상 구조의 금형 개발을 위한 가공실험을 수행하였다. 본 실험에서는 먼저 shaping 방식으로 세 종류의 다이아몬드 바이트를 사용하여 알루미늄, PMMA, Nickel, 황동 등의 소재에 pitch $150{\mu}m$, 높이 $8{\mu}m$ 내외의 미세 치형의 금형 코어를 가공하였고, 다음으로 Z축에 air spindle을 설치하여 $\phi0.2mm$의 end-mill(WC)을 사용하여 황동 소재에 깊이 $200{\mu}m$, 폭 $200{\mu}m,\;100{\mu}m,\;50{\mu}m,\;30{\mu}m$의 두께 변화를 주어 미세 격벽에 대한 가공실험을 하였다. 미세 구멍가공실험으로는 drilling 전용장비를 구성하여 $\phi0.6\~0.15mm$의 drill공구로 SM45C와 세라믹$(Si_3N_4-BN)$ 소재에 스텝이송방식에 의한 미세 구멍 가공 실험을 실시하였다.

• Bulletin of the Korean Chemical Society
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• v.33 no.10
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• pp.3407-3412
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• 2012

The Ti incorporation at Fe-site in the double perovskite lattice of $Sr_2FeNbO_6$ (SFNO) system is studied. The Ti concentration optimization yielded an efficient photocatalyst. At an optimum composition of Ti as x = 0.07 in $Sr_2Fe_{1-x}Ti_xNbO_6$, the photocatalyst exhibited 2 times the quantum yield for photolysis of $H_2O$ in presence of $CH_3OH$, than its undoped counterpart under visible light (${\lambda}{\geq}420nm$). Heavily Ti-doped $Sr_2Fe_{1-x}Ti_xNbO_6$ lattice exhibited poor photochemical properties due to the existence of constituent impurity phases as observed in the structural characterization, as well as deteriorated optical absorption. The higher electron-density acquired by n-type doping seem to be responsible for the more efficient charge separation in $Sr_2Fe_{1-x}Ti_xNbO_6$ (0.05 < x < 0.4) and thus consequently displays higher photocatalytic activity. The Ti incorporated structure also found to yield stable photocatalyst.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.5
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• pp.173-181
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• 2015

A stoichiometric mixture of evaporating materials for $BaIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaIn_2S_4$ single crystal thin films measured from Hall effect by van der Pauw method are $6.13{\times}10^{17}cm^{-3}$ and $222cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.0581eV-(3.9511{\times}10^{-3}eV/K)T^2/(T+536K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaIn_2S_4$ have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaIn_2S_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n = 1 and $C_{24}$-exciton peaks for n = 24.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.3
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• pp.428-438
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• 2016

This paper shows the design of the 100 kW IPMSG for small hydraulic power generator. The high-efficient generator, method of the dual layer interior permanent magnet was studied to improve the method of the single layer interior permanent magnet, which is mostly used. Analysis of magnet arrangement and cogging torque was done by FEM. According to structure analysis of dual layer interior permanent magnet, the amount of usage of the permanent magnet was reduced and cogging torque was decreased as well. With these successful results, the high-efficient generator design was accomplished. Based on the results of the structure analysis, the test product was designed and manufactured. And the design values and performance outputs were compared and verified with success. Also, the economic feasibility was conducted based on the electric power generated from the test product installed at the site. By the B/C analysis, in case that only SMP was analyzed, B/C ratio was 1.24 at the discount ratio of 5.5%, which considered to be economically feasible. The study is expected to be used for the application of developing large scale high-efficient interior permanent magnet synchronous generator.