• Proceedings of the Korean Magnestics Society Conference
• /
• 2009.12a
• /
• pp.204-205
• /
• 2009

The magnetic properties and structure of FeRh thin film pitaxially grown onto MgO(001) substrate were studied by MPMS(Magnetic Properties Measure System) and in-situ temperature synchrotron XRD(X-ray Diffraction). The transition temperature of FeRh thin films was around 380K. Both M-T curve and d-spacing changes correspond to each other very closely.

• Journal of the Korean Society of Industry Convergence
• /
• v.23 no.4_2
• /
• pp.661-667
• /
• 2020

The optimal shape modeling of core parts through 3D modeling and structural analysis for the development of small and medium-sized ships. The goal is to improve the efficient structure of the hydraulic system for controlling the rudder among the core steering parts in small and medium-sized ships. Through 3D modeling and structural analysis, a new concept of tiller parts and a double-acting hydraulic cylinder control system were proposed and operational structural stability was evaluated. Structural analysis of the three different tiller designs that can be replaceable onto existing fishing vessels was conducted to derive the final shapes. The emphasis was placed on evaluating the structural stability of the key drive components, the tiller, pin, and cylinder rodin the maximum torque condition of the hydraulic cylinder.

• Corrosion Science and Technology
• /
• v.4 no.6
• /
• pp.242-249
• /
• 2005

A lot of parts in FGD (Flue Gas Desulfurization) systems of fossil-fuel power plants show the environments in which are highly changeable and extremely acidic corrosive medium according to time and locations, e.g. in duct works, coolers and re-heaters etc. These conditions are formed when system materials are immersed in fluid that flows on them or when exhausted gas is condensed into thin layered acidic medium to contact materials of the system walls and roofs. These environments make troublesome corrosion and air pollution problems that are occurred from the leakage of the condensed solution. To cathodically protect the metallic structures in extremely acidic fluid, the properties of the protective coatings on the metal surface were very important, and epoxy Novolac coating was applied in this work. On the base of acid immersion tests, hot sulfuric acid decreased the hardness of the coatings and reduced greatly the content of $Na_2O$, $Al_2O_3$, and $SiO_2$ among the main components of the coating. A special kind of CP(Cathodic Protection) system has been developed and tested in a real scale of the FGD facility. Applied coating for this CP system was peeled off and cracked in some parts of the facility. However, the exposed metal surface to extremely acidic fluid by the failure of the coatings was successfully protected by the new CP system.

• Journal of Sensor Science and Technology
• /
• v.15 no.6
• /
• pp.397-405
• /
• 2006

Single crystal $AgGaSe_{2}$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_{2}$ source at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $AgGaSe_{2}$ thin films measured with Hall effect by van der Pauw method are $4.05{\times}10^{16}/cm^{3}$, $139cm^{2}/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $AgGaSe_{2}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$=1.9501 eV-($8.79{\times}10^{-4}{\;}eV/K)T^{2}$/(T+250 K). The crystal field and the spin-orbit splitting energies for the valence band of the $AgGaSe_{2}$ have been estimated to be 0.3132 eV and 0.3725 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}So$ definitely exists in the ${\Gamma}_{5}$ states of the valence band of the $AgGaSe_{2}$. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-$, and $C_{1}-$exciton peaks for n=1.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.14 no.6
• /
• pp.244-252
• /
• 2004

A stoichiometric mixture of evaporating materials for $CuInSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $_CuInSe2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62\times10^{16}/\textrm{cm}^3$, 296 $\textrm{cm}^2$/Vㆍs at 293 K, respectively. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 1.1851 eV -($8.99\times10^{-4} eV/K)T^2$(T + 153 K). The crystal field and the spin-orbit splitting energies for the valence band of the CuInSe$_2$ have been estimated to be 0.0087 eV and 0.2329 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the Δso definitely exists in the $\Gamma$6 states of the valence band of the $CuInSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_1-, B_1$-와 $C_1$-exciton peaks for n = 1.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
• /
• 2003.04a
• /
• pp.434-440
• /
• 2003

The exchange of model design date among heterogeneous CAD systems is a difficult task because each system has different data structures suitable for its own functions. STEP has been able to represent product information as a common computer-interpretable form that is required to remain complete and consistent when the product informant is needed to be exchanged among different computer system. However, STEP has difficult architecture in is representing point, line, curve and vectors of element, more over it can't represent geometry data of feature based models. In this study, a structure of XML document that represents geometry data of feature based models as neutral format has been developed. To use the developed XML document, a Converter has also been developed to exchange modules so that it can exchange feature based data models among heterogeneous CAD systems. Aa for evaluation of the developed XML document and Converter, Solidworks and SolidEdge are selected.

• International Journal of Computer Science & Network Security
• /
• v.21 no.12
• /
• pp.41-44
• /
• 2021

This article proposes to consider the experience of using information and communication technologies in educational processes and social practices of Ukrainian universities. The history of the introduction of information and communication technologies in the development of the higher education system is considered, the system of organizing the information space of universities is investigated. The distinctive features of the structure of a single information space, as well as distance e-learning technologies are highlighted. Empirical material obtained in the course of sociological research is used to discuss specific examples of the use of ICT in universities.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.17 no.5
• /
• pp.179-186
• /
• 2007

Single crystal $CdGa_2Se_4$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with the hot wall epitaxy(HWE) system by evaporating the polycrystal source of $CdGa_2Se_4$ at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of single crystal $CdGa_2Se_4$ thin films measured with Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3},\;345cm^2/V{\cdot}s$ at 293 K, respectively. The photocurrent and the absorption spectra of $CdGa_2Se_4/SI$(Semi-Insulated) GaAs(100) are measured ranging from 293 K to 10 K. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation $E_g(T)=2.6400eV-(7.721{\times}10^{-4}eV/K)T^2/(T+399K)$. Using the photocurrent spectra and the Hopfield quasicubic model, the crystal field energy(${\Delta}cr$) and the spin-orbit splitting energy(${\Delta}so$) far the valence band of the $CdGa_2Se_4$ have been estimated to be 106.5 meV and 418.9 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-},\;B_{1^-},\;and\;C_{11}-exciton$ peaks.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.21 no.3
• /
• pp.99-104
• /
• 2011

A stoichiometric mixture of evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. The crystal structure of these compounds has a rhombohedral structure with lattice constants $a_0=3.953\;{\AA}$, $c_0=38.890\;{\AA}$. To obtain the single crystal thin films, $MgGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the double crystal X-ray rocking curve and X-ray diffraction ${\omega}-2{\theta}$ scans. The carrier density and mobility of $MgGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method were $6.21{\times}10^{18}\;cm^{-3}$ and 248 $cm^2/v{\cdot}s$ at 293 K, respectively. The optical absorption of $MgGa_2Se_4$ single crystal thin films was investigated in the temperature range from 10 K to 293 K. The temperature dependence of the optical energy gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's equation, $E_g(T)=E_g(0)-({\alpha}T^2/T+{\beta})$. The constants of Varshni's equation had the values of $E_g(0)=2.34\;eV$, ${\alpha}=8.81{\times}10^{-4}\;eV/K$ and ${\beta}=251\;K$, respectively.

• Korean Management Science Review
• /
• v.23 no.3
• /
• pp.243-257
• /
• 2006

ITU-T's NgN(Next generation Network) architecture is expected to offer a new Internet platforms such as QoS(Quality of Service) guaranteed services as it overcame the limitations of the existing best-effort Internet architecture. However, policy development crucial for the NgN framework(e.g., interconnections and billing) is lagging far behind technology development. For example, arguments over network neutrality clearly indicate little understanding of the Internet industry structure where diverse providers including ISP and CP coexist. This study employs a network economics approach to predict how the competitive landscape involving various providers will evolve under the traffic-based billing system under the NgN environment. Applied is the non-cooperative game theory, in particular, Stackelberg's repeated game in order to build and analyze model for competition among those providers. We also studied possible impacts that CPs would have on the competitive landscape if they have an option to replace ISP: i.e., CDN(Content Delivery Network) provider. Lastly, based on the model analysis and experiments, presented are their implications to policy development and tile future prospect.