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Je, J.H.;Noh, D.Y.
- Journal of the Korean institute of surface engineering
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- v.29 no.5
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- pp.399-406
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- 1996
The orientational cross-over phenomena in an RF sputtering growth of TiN films were studied in an in-situ, real-time synchrotron x-ray scattering experiment. For the films grown with pure Ar sputtering gas, the cross-over from the more strained (002)-oriented grains to the less strained (111)-oriented grains occurred as the film thickness was increased. As the sputtering power was increased, the cross-over thickness, at which the growth orientation changes from the <002> to the <111> direction, was decreased. The addition of $N_2$ besides Ar as sputtering gas suppressed the cross-over, and consequently resulted in the (002) preferred orientation without exhibiting the cross-over. We attribute the observed cross-over phenomena to the competition between the surface and the strain energy. The x-ray powder diffraction, the x-ray reflectivity, and the ex-situ AFM surface topology study consistently suggest that the microscopic growth front was in fact always the (002) planes. In the initial stage of growth, the (002) planes were aligned to the substrate surface to minimize the surface energy. At later stages, however, the (002) growth front tilted away from the surface by about $60^{\circ}$ to relax the strain, which caused the cross-over of the preferred growth direction to the <111> direction.
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Lee, Hyeon-Hwi;Kim, Hyo-Jeong;Kim, Jang-Ju
- Proceedings of the Korean Vacuum Society Conference
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- 2013.02a
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- pp.181-181
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- 2013
Recently, nanostructure and the molecular orientation of organic thin films have been largely paid attention due to its importance in organic electronics such as organic thin film transistors (OTFTs), organic light emitting diodes (OLEDs), and organic photovoltaics (OPVs). Among various methods, the diffraction and scattering techniques based on synchrotron x-rays have shown powerful results in organic thin film systems. In this work, we introduce the in-situ annealing system installed at PLS-II (Pohang Light Source II) for organic thin films by simultaneously conducting various x-ray scattering measurements of x-ray reflectivity, conventional x-ray scattering, grazing incidence wide angle x-ray scattering (GI-WAXS) and so on. Using the in-situ measurement, we could obtain real time variation of nanostructure as well as molecular orientation during thermal annealing in metal-phthalocyanine thin films. The variation of surface and interface also could be simultaneously investigated by the x-ray reflectivity measurement.
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Lee, Hee-Seock;Hong, Suk-Mo;Kim, Min-Ho
- Proceedings of the Korean Nuclear Society Conference
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- 2004.10a
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- pp.1190-1191
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- 2004
New $4^{th}$ generation synchrotron facility, XFEL, is almost similar to previous $3^{rd}$ generation synchrotron facility in the view of radiological aspects and most important positions are a dump and synchrotron radiation beam line. In this paper, tile radiation protection solutions for them and undulator are suggested and discussed.
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Kim, Tae-Kyu;Zuo, Xiaobing;Tiede, David M.;Ihee, Hyot-Cherl
- Bulletin of the Korean Chemical Society
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- v.25 no.11
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- pp.1676-1680
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- 2004
We demonstrate that wide-angle X-ray scattering pattern from photoactive yellow protein (PYP) in solution using a high flux third generation synchrotron X-ray source reflects not only the overall structure, but also fine structures of the protein. X-ray scattering data from PYP in solution have been collected in q ranges from 0.02 ${\AA}^{-1}$ to 2.8 ${\AA}^{-1}$. These data are sensitive to the protein structure and consistent with the calculation based on known crystallographic atomic coordinates. Theoretical scattering patterns were also calculated for the intermediates during the photocycle of PYP to estimate the feasibility of time-resolved wide-angle X-ray scattering experiments on such proteins. These results demonstrate the possibility of using the wide-angle solution X-ray scattering as a quantitative monitor of photo-induced structural changes in PYP.
https://doi.org/10.5012/bkcs.2004.25.11.1676 인용 PDF KSCI