• Journal of Electrical Engineering and Technology
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• 제9권2호
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• pp.686-694
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• 2014

A power semiconductor device, usually used as a switch or rectifier, is very significant in the modern power industry. The power semiconductor, in terms of its physical properties, requires a high breakdown voltage to turn off, a low on-state resistance to reduce static loss, and a fast switching speed to reduce dynamic loss. Among those parameters, the breakdown voltage and on-state resistance rely on the doping concentration of the drift region in the power semiconductor, this effect can be more important for a higher voltage device. Although the low doping concentration in the drift region increases the breakdown voltage, the on-state resistance that is increased along with it makes the static loss characteristic deteriorate. On the other hand, although the high doping concentration in the drift region reduces on-state resistance, the breakdown voltage is decreased, which limits the scope of its applications. This addresses the fact that breakdown voltage and on-state resistance are in a trade-off relationship with a parameter of the doping concentration in the drift region. Such a trade-off relationship is a hindrance to the development of power semiconductor devices that have idealistic characteristics. In this study, a novel structure is proposed for the Insulated Gate Bipolar Transistor (IGBT) device that uses conductivity modulation, which makes it possible to increase the breakdown voltage without changing the on-state resistance through use of a P-floating layer. More specifically in the proposed IGBT structure, a P-floating layer was inserted into the drift region, which results in an alleviation of the trade-off relationship between the on-state resistance and the breakdown voltage. The increase of breakdown voltage in the proposed IGBT structure has been analyzed both theoretically and through simulations, and it is verified through measurement of actual samples.

• 해양환경안전학회지
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• 제23권6호
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• pp.739-745
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• 2017

선박에서 배출되는 환경오염물질 저감 및 연료 소비를 줄이기 위한 다양한 연구가 진행되고 있다. 이에 따라 기존의 전력망과 신재생에너지를 연계 시킬 수 있는 직류배전시스템의 한 부분인 전력변환시스템에 대한 연구가 활발히 이루어지고 있다. 현재 전력변환장치로 주로 사용되고 있는 다이오드 정류기는 부하의 입력전류에 많은 저차고조파가 포함되어 공급전압의 왜곡을 초래하고 전체시스템의 전력품질을 저하시킨다. 일정하지 않은 출력 전압파형은 발전기, 부하기기 등에 오작동 유발 및 인버터 단의 스위칭 소자에 영향을 미치며 스위칭 손실을 증가 시킨다. 본 논문에서는 AFE(Active Front End) 방식 PWM(Pulse Width Modulation) 정류기의 직류출력, 입력 전원의 역률 및 총고조파왜형률(Total Harmonic Distortion)을 개선하기 위해서 PLL회로를 사용한 제어기를 설계하였고, 시뮬레이션 결과 직류 출력전압 파형과 입력전원의 역률이 기존 보다 개선되었으며 총고조파왜형률 또한 IEEE Std514-2014 규정에 적합한 결과를 얻을 수 있었다.