• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.11
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• pp.83-94
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• 2003

In this paper. a highly linear and low glitch CMOS current mode digital-to-analog converter (DAC) by self calibration bias circuit is proposed. The architecture of the DAC is based on a current steering 6＋4 segmented type and new switching scheme for the current cell matrix, which reduced non-linearity error and graded error. In order to achieve a high performance DAC . novel current cell with a low spurious deglitching circuit and a new inverse thermometer decoder are proposed. The prototype DAC was implemented in a 0.35${\mu}{\textrm}{m}$ n-well CMOS technology. Experimental result show that SFDR is 60 ㏈ when sampling frequency is 32MHz and DAC output frequency is 7.92MHz. The DAC dissipates 46 mW at a 3.3 Volt single power supply and occupies a chip area of 1350${\mu}{\textrm}{m}$ ${\times}$750${\mu}{\textrm}{m}$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.10
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• pp.319-330
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• 2016

Recently, 3D printing technology has been applied to make a concept model and working mockup of an industrial application. On the other hand, this technology has limited applications in industrial products due to the materials and reliability of the 3D printed product. In this study, the components of a full cord switch module are proposed as a case of a 3D printed component that can be used as a substitute for a short period. These are hub-driven and lever lockup components that have the structural characteristics of breaking down frequently in the emergency operating status. To ensure the structural strength for a substitute period, research of structure optimization was performed because 3D printing technology has a limitation in the materials used. After optimizing the structure variables of the hub-driven component, reasonable results can be drawn in that the safety factors of the left and right switching mode are 1.243 (${\Delta}153.67%$) and 3.156 (${\Delta}404.96%$). The lever lockup component has a structural weak point that can break down easily on the lockup-part because of a cantilever shape and bending moment. The rib structure was applied to decrease the deflection. In addition, optimization of the structural variables was performed, showing a safety factor of 7.52(${\Delta}26%$).

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.12 no.5
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• pp.499-506
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• 2019

This paper is concerned with the operating stability of 7kW inverter using SIC hybrid module and verifies the validity of the simulation results by comparing the result of the loss equation and the simulation result, Simulation results using Si module and SiC hybrid module are compared to compare switch loss and diode loss. Through the loss equation calculation, the conduction loss of SiC Hybrid module is 168W, switching loss is 9.3W, diode loss is 10.5nW, When compared with the simulation results, similar values were shown. As a result of comparing the simulation results of the Si module and the SiC Hybrid module, The total device loss of the Si module was 246.2W, and the total device loss of the SiC Hybrid module was 189.9W. The loss difference was 56.3W, which was about 0.8W. thereby verifying the reverse recovery characteristics of the SiC SBD. In addition, temperature saturation test was conducted to confirm the stability of SiC Hybrid module and Si module under high temperature saturation, In the case of the Si module, the output power was stopped at 4kW, and the SiC Hybrid module was confirmed to operate at 7kW. Based on this, an efficiency graph and a temperature graph are presented, and the Si module is graphed up to 4kW and the SiC Hybrid module is graphed up to 7kW.

• Journal of IKEEE
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• v.25 no.2
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• pp.399-407
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• 2021

This paper proposes the DC-link voltage design method of Type 4 wind turbine that minimizes power loss and satisfies the High Voltage Ride Through(HVRT) function requirements of the transmission system operator. The Type 4 wind turbine used for large-capacity offshore wind turbine consists of the Back-to-Back converter in which the converter linked to the power grid and the inverter linked to the wind turbine share the DC-link. When the grid high voltage fault occurs in the Type 4 wind turbine, if the DC-link voltage is insufficient compared to the fault voltage level, the current controller of the grid-side converter can't operate smoothly due to over modulation. Therefore, to satisfy the HVRT function, the DC-link voltage should be designed based on the voltage level of high voltage fault. However, steady-state switching losses increase further as the DC-link voltage increases. Therefore, the considerations should be included for the loss to be increased when the DC-link voltage is designed significantly. In this paper, the design method for the DC-link voltage considered the fault voltage level and the loss is explained, and the validity of the proposed design method is verified through the HVRT function simulation based on the PSCAD model of the 2MVA Type 4 wind turbine.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.22 no.2
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• pp.810-818
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• 2021

A leakage current of ESS is classified mainly by the occurrence from a PCS(Power Conditioning System) section and an unbalanced grid current. The reason for the leakage current from the PCS section is a voltage change by IGBT (Insulated Gate Bipolar Transistor) switching and stray capacitance between the IGBT and heatsink. The leakage current caused by the grid unbalanced current flows to the ESS through the neutral line of grid-connected transformer for the ESS with a three limb iron type of Yg-wire connection. This paper proposes a mechanism for the occurrence of leakage current caused by stray capacitance, which is calculated using the heatsink formula, from the aspect of the PCS section and grid unbalance current. Based on the proposed mechanisms, this study presents the modeling of the leakage current occurrence using PSCAD/EMTDC S/W and evaluates the characteristics of leakage currents from the PCS section and grid unbalanced current. From the simulation result, the leakage current has a large influence on the battery side by confirming that the leakage current from the PCS is increased from 7[mA] to 34[mA], and the leakage current from an unbalanced load to battery housing is increased from 3.96[mA] to 10.76[mA] according to the resistance of the housings and the magnitude of the ground resistance.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.9
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• pp.63-73
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• 2015

This work proposes a 2-channel time-interleaved (T-I) 10b 120MS/s pipeline SAR ADC minimizing offset mismatch between channels without any calibration scheme. The proposed ADC employs a 2-channel SAR and T-I topology based on a 2-step pipeline ADC with 4b and 7b in the first and second stage for high conversion rate and low power consumption. Analog circuits such as comparator and residue amplifier are shared between channels to minimize power consumption, chip area, and offset mismatch which limits the ADC linearity in the conventional T-I architecture, without any calibration scheme. The TSPC D flip-flop with a short propagation delay and a small number of transistors is used in the SAR logic instead of the conventional static D flip-flop to achieve high-speed SAR operation as well as low power consumption and chip area. Three separate reference voltage drivers for 4b SAR, 7b SAR circuits and a single residue amplifier prevent undesirable disturbance among the reference voltages due to each different switching operation and minimize gain mismatch between channels. High-frequency clocks with a controllable duty cycle are generated on chip to eliminate the need of external complicated high-frequency clocks for SAR operation. The prototype ADC in a 45nm CMOS technology demonstrates a measured DNL and INL within 0.69LSB and 0.77LSB, with a maximum SNDR and SFDR of 50.9dB and 59.7dB at 120MS/s, respectively. The proposed ADC occupies an active die area of 0.36mm2 and consumes 8.8mW at a 1.1V supply voltage.

• Korean Journal of Optics and Photonics
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• v.20 no.5
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• pp.266-271
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• 2009

We designed a thermo-optic switch based on a directional coupler with not only a high extinction ratio but also significantly low power consumption. The switch operates by using the thermo-optic effect of the polymer which the refractive index changes by heating the electrode. If the electrode is not powered (OFF), the input light will be coupled completely to the other waveguide. When the electrode is powered at a certain level (ON), input light launched into the input waveguide will remain in that waveguide due to the lower index adjusted in the other waveguide. The switch based on the directional coupler was designed using the generalized extinction ratio curve and the lateral shift of the input waveguide. The coupling length is 1,610 ${\mu}m$ and the extinction ratios are -28 and -30 dB for ON and OFF states, respectively. The electrode structures were optimized by thermal analysis. The transported heat into the waveguide is increased, as the electrode width (w) is increased and the center distance between the electrode and the waveguide (d) is decreased. Also, because the heat generated in the electrode affects the other waveguide, the temperature difference between two waveguides is varied as the given w and d. There are specific conditions which have the maximum of the temperature difference. That of the temperature difference is increased as the width and the temperature of the electrode are increased. Especially, when the switch is designed using the condition with the maximum of the temperature difference for switching, the temperature of the electrode can be decreased. We expect this condition will be the novel method for the reduction of the power consumption in a thermo-optic switch.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.115-116
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• 2012

The demand for flexible electronic systems such as wearable computers, E-paper, and flexible displays has increased due to their advantages of excellent portability, conformal contact with curved surfaces, light weight, and human friendly interfaces over present rigid electronic systems. This seminar introduces three recent progresses that can extend the application of high performance flexible inorganic electronics. The first part of this seminar will introduce a RRAM with a one transistor-one memristor (1T-1M) arrays on flexible substrates. Flexible memory is an essential part of electronics for data processing, storage, and radio frequency (RF) communication and thus a key element to realize such flexible electronic systems. Although several emerging memory technologies, including resistive switching memory, have been proposed, the cell-to-cell interference issue has to be overcome for flexible and high performance nonvolatile memory applications. The cell-to-cell interference between neighbouring memory cells occurs due to leakage current paths through adjacent low resistance state cells and induces not only unnecessary power consumption but also a misreading problem, a fatal obstacle in memory operation. To fabricate a fully functional flexible memory and prevent these unwanted effects, we integrated high performance flexible single crystal silicon transistors with an amorphous titanium oxide (a-TiO2) based memristor to control the logic state of memory. The $8{\times}8$ NOR type 1T-1M RRAM demonstrated the first random access memory operation on flexible substrates by controlling each memory unit cell independently. The second part of the seminar will discuss the flexible GaN LED on LCP substrates for implantable biosensor. Inorganic III-V light emitting diodes (LEDs) have superior characteristics, such as long-term stability, high efficiency, and strong brightness compared to conventional incandescent lamps and OLED. However, due to the brittle property of bulk inorganic semiconductor materials, III-V LED limits its applications in the field of high performance flexible electronics. This seminar introduces the first flexible and implantable GaN LED on plastic substrates that is transferred from bulk GaN on Si substrates. The superb properties of the flexible GaN thin film in terms of its wide band gap and high efficiency enable the dramatic extension of not only consumer electronic applications but also the biosensing scale. The flexible white LEDs are demonstrated for the feasibility of using a white light source for future flexible BLU devices. Finally a water-resist and a biocompatible PTFE-coated flexible LED biosensor can detect PSA at a detection limit of 1 ng/mL. These results show that the nitride-based flexible LED can be used as the future flexible display technology and a type of implantable LED biosensor for a therapy tool. The final part of this seminar will introduce a highly efficient and printable BaTiO3 thin film nanogenerator on plastic substrates. Energy harvesting technologies converting external biomechanical energy sources (such as heart beat, blood flow, muscle stretching and animal movements) into electrical energy is recently a highly demanding issue in the materials science community. Herein, we describe procedure suitable for generating and printing a lead-free microstructured BaTiO3 thin film nanogenerator on plastic substrates to overcome limitations appeared in conventional flexible ferroelectric devices. Flexible BaTiO3 thin film nanogenerator was fabricated and the piezoelectric properties and mechanically stability of ferroelectric devices were characterized. From the results, we demonstrate the highly efficient and stable performance of BaTiO3 thin film nanogenerator.

• The Journal of the Korea Contents Association
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• v.20 no.11
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• pp.204-215
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• 2020

We analyze changes of consumption behavior for bundle services for the latest three years focusing on comparing the detailed service types and service providers to understand competition structure in the market. Our major findings and implications are as follows. First, the mobile telecommunication service is certainly deemed to be a major selection criteria for bundling service provider, therefore the leading company in the mobile telecommunication has become more significant market power. Second, IPTV has an important influence for slection of bundling service provider, lately in some cases, rather than broadband Internet. Third, the individual services affecting the selection of bundling service providers clearly showed differentiation among three operators as a mobile telecommunication service of SK Group, a broadband Internet of KT, and an IPTV of LGU+. In addition, the importance of individual services in securing subscribers has been increased as the preference factors to switch a service provider were synchronized with the decision of major bundling service provider. Finally, although it is difficult to find customers' lock-In due to the latest change of their intentions to switch a provider, we find it is continuously necessary to monitor customers' lock-in as there are more long-term customers with re-contracts. Our results provide the policy implications based on the change of competition structure and usage behavior in the bundle market which is not evaluated the competiton situation.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.10 no.3
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• pp.199-205
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• 2017

In a small cell base station used in densely populated areas, a dual polarized multiple antenna(MIMO) is mainly used to increase the cell capacity. This paper demonstrates a dual-polarization antenna with high cross-polarization discrimination(XPD) that can improve the capacity of a small cell using a dual polarization multiple antenna (MIMO). By using the symmetric structure and differential feeding, high XPD in all directions is achieved. In addition, a very similar radiation pattern is observed between each polarization. Because of high XPD and similar radiation pattern in all directions, proposed antenna is well adopted for small-cell multiple-input multiple-output(MIMO) system. Experimental results shows that the proposed antenna has a bandwidth of 180 MHz (2.51~2.7 GHz), a maximum gain of 4.5 dBi (3.5~4.5 dBi), and a half-power beam width of 85 degrees. In addition, average XPD of 26.4 dB in all directions, more than 13.8 dB increase than previous dual-polarization antennas which use single emitter by using different feeding or selectively use polarization through switching.