• Title/Summary/Keyword: Switching power

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Characteristics of Non-Isolated OSAKA Converter -Characteristics of Three-Phase Soft-Switching Power Factor Corrected Converter for Large Scale Power Without Three-Phase Transformer-

  • Taniguchi, Katsunori;Shimomori, Wataru;Lee, Hyun-Woo
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2005년도 제36회 하계학술대회 논문집 B
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    • pp.1383-1386
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    • 2005
  • Non-isolated OSAKA Converter, which removes a three-phase transformer, is described in this paper. The converter switches once in every half cycle of an AC commercial power source. Therefore, it can solve many problems caused by the high frequency operation. The proposed converter achieves the soft-switching operation and the EMI noise can be reduced. In this circuit, the resonant capacitor, which is used for the soft-switching operation, is utilized for the improvement of an input current waveform. To achieve low cost and compact structure, non-isolated OSAKA converter removes a three-phase transformer of the OSAKA converter. By removing the three-phase transformer, three phase currents occur the interferences each other. To avoid the interference, a new switching method for non-isolated OSAKA converter is preposed. The converter can be constructed by the low-speed large power devices. The converter generates the low distorted input current waveforms with high power factor.

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무손실 스너버 적용 소프트 스위칭 Forward 컨버터 (Soft Switching Forward Converter Using Non-Dissipative Snubber)

  • 김은수;김태진;최해영;조기연;김윤호
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 1997년도 전력전자학술대회 논문집
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    • pp.256-260
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    • 1997
  • To achieve high efficiency in high power and high frequency applications, reduction of switching losses and noise is very important. In this paper, an improved soft switching forward converter is proposed. The proposed converter is constructed by using non-dissipative snubbers in parallel with the main switch and output diode of the conventional forward converter. Due to the use of the non-dissipative snubbers in the primary and secondary, the proposed converter achieves zero-voltage and zero-current switching for all switching devices without switching losses and output diode recovery losses. The complete operating principles, theoritical analysis, experimental results will be presented.

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통신장비 시험용 Switching Power Supply 개발에 관한 연구 (A Study on the Development of Switching Power Supply for testing communication equipment)

  • 배진용;김용;권순도;한경태;이동현
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2003년도 춘계학술대회 논문집 전기기기 및 에너지변환시스템부문
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    • pp.253-257
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    • 2003
  • This paper presents the Development of Switching Power Supply for testing communication equipment. The communication equipment need many kinds of voltage(-48V,27V,12V,5V,3.3V), and in case of low voltage needs large current($10{\sim}20A$). The previous Linear Power Supply was very heavy, has low efficiency and poor power-factor for testing communication equipment. This development has good efficiency and high power-factor using switch mode power supply technique. This Development of Switching Power Supply is composed of eight converters. The principles of operation, feature, and design considerations are illustrated and verified through the experiment with 600W prototype.

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디스플레이용 스위칭모드 전원장치의 단락 고장분석 검출기법 (Techniques to Diagnose Short-Circuit Faults in the Switching Mode Power Supply for Display)

  • 이재원;전태원
    • 전기학회논문지
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    • 제65권7호
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    • pp.1186-1192
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    • 2016
  • This paper proposes techniques to diagnose short-circuit faults of both the diodes and power FET in switching mode power supply (SMPS) by using a simple analog tester. The diodes in full-bridge rectifier, power FET, switching transformer, and some sensors are modelled with resistor. The total resistance value measured at the input terminal of a SMPS is analyzed when the short-circuit faults of diodes in a full bridge rectifier or power FET are occurred. The short-circuit faults of one or two diodes in a full bridge rectifier, power FET, and both the diodes in a full bridge rectifier and power FET can be detected by a range of total resistance, which is measured by the analog tester. Through experiments, the theoretical analysis for total resistance under short-circuit faults can be verified.

교류전력 불평형 보상장치용 모델예측기반 전류제어 연구 (A Study on a Current Control Based on Model Prediction for AC Electric Railway Inbalance Compensation Device)

  • 이정현;조종민;신창훈;이태훈;차한주
    • 전력전자학회논문지
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    • 제25권6호
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    • pp.490-495
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    • 2020
  • The power loss of large-capacity systems using single-phase inverters has attracted considerable attention. In this study, optimal switching sequence model prediction control at a low switching frequency is proposed to reduce the power loss in a high-power inverter system, and a compensation method that can be utilized for model prediction control is developed to reduce errors in accordance with sampling values. When a three-level, single-phase inverter using a switching frequency of 600 Hz and a sampling frequency of 12 kHz is adopted, the power factor is improved from 0.95 to 0.99 through 3 kW active power control. The performance of the controller is also verified.

Mode Switching Smooth Control of Transient Process of Grid-Connected 400 Hz Solid-State Power Supply System

  • Zhu, Jun-Jie;Nie, Zi-Ling;Zhang, Yin-Feng;Han, Yi
    • Journal of Power Electronics
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    • 제16권6호
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    • pp.2327-2337
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    • 2016
  • The mode-switching control of transient process is important to grid-connected 400 Hz solid-state power supply systems. Therefore, this paper analyzes the principle of on-grid and islanding operation of the system with or without local loads in the grid-connected process and provides a theoretical study of the effect of different switching sequences on the mode-switching transient process. The conclusion is that the mode switch (MS) must be turned on before the solid-state switch (STS) in the on-grid process and that STS must be turned off before the MS in the off-grid process. A strategy of mode-switching smooth control for transient process of the system is proposed, including its concrete steps. The strategy utilizes the average distribution of peak currents and the smooth adjustment of peak currents and phases to achieve a no-shock grid connection. The simulation and experimental results show that the theoretical analysis is correct and that the method is effective.

드레인 바이어스 스위칭을 이용한 와이브로/무선랜 이중 모우드 전력증폭기 (Dual Mode Power Amplifier for WiBro and Wireless LAN Using Drain Bias Switching)

  • 이영민;구경헌
    • 대한전자공학회논문지TC
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    • 제44권3호
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    • pp.1-6
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    • 2007
  • 와이브로 및 무선랜 이중 대역 이중 모우드 송신기에서 전력부가효율을 증가시킬 수 있는 바이어스 스위칭 기술을 제시한다. 서로 다른 주파수 대역과 출력을 갖는 송신기에서 높은 효율을 얻을 수 있는 기법으로 바이어스 스위칭을 제안하고 드레인과 게이트 바이어스의 변화에 따른 영향을 각각 시뮬레이션 하였다. 바이어스 스위칭을 적용하지 않은 경우의 전력부가효율에 비해 시뮬레이션 된 최적의 고정 게이트 바이어스를 공급하고 드레인 바이어스 스위칭을 한 경우 매우 개선된 전력 효율 특성을 얻을 수 있었다 이러한 드레인 및 게이트 바이어스 스위칭 기술은 다양한 기능을 필요로 하는 다중 모우드 통신 시스템에 유용할 것이다.

고속 스위칭 및 고 전력밀도 강압형 컨버터를 위한 무손실 스너버 (Non-Dissipative Snubber for High Switching Frequency and High Power Density Step-Down Converters)

  • 신정민;박철완;한상규
    • 전력전자학회논문지
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    • 제22권4호
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    • pp.345-352
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    • 2017
  • In this paper, a non-dissipative snubber for reducing the switching losses in the step down converter is proposed. The conventional step down converter, e.g., buck converter, suffers from serious switching losses and consequentially heat generation because of its hard switching. Thus, it is unsuitable for high switching frequency operation. Reduction of the reactive components' size, such as an output inductor and capacitor, is difficult. The proposed snubber can slow down the increasing current slopes and switch voltage at turn-on and turn-off transients, thereby significantly reducing the switching loses. Additionally, the slowly increasing current during switch turn-on transition, can effectively solve the output rectifier diode reverse recovery problem. Therefore, the proposed non-dissipative snubber not only leads to the efficiency of converter operation at high switching frequency but also reduces the reactive components size in proportion to the switching frequency. To confirm the validity of the proposed circuit, theoretical analysis and experimental results from a 150 W, 1 MHz prototype are presented.

A New Dual-Active Soft-Switching Converter for an MTEM Electromagnetic Transmitter

  • Wang, Xuhong;Zhang, Yiming;Liu, Wei
    • Journal of Power Electronics
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    • 제17권6호
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    • pp.1454-1468
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    • 2017
  • In this study, a new dual-active soft-switching converter is proposed to improve conversion efficiency and extend the load range for an MTEM electromagnetic transmitter in geological exploration. Unlike a conventional DC/DC converter, the proposed converter can operate in passive soft-switching, single-active soft-switching, or dual-active soft-switching modes depending on the change in load power. The main switches and lagging auxiliary switches of the converter can attain soft-switching over the entire load range. The conduction and switching losses are greatly reduced compared with those of ordinary converters under the action of the cut-off diodes and auxiliary windings coupled to the main transformer in the auxiliary circuits. The conversion efficiency of the proposed converter is significantly improved, especially under light-load conditions. First, the working principle of the proposed converter is analyzed in detail. Second, the relationship between the different operating modes and the load power is given and the design principle of the auxiliary circuit is presented. Finally, the Saber simulation and experimental results verify the feasibility and validity of the converter and a 50 kW prototype is implemented.

Effects of Fast Neutron Irradiation on Switching of Silicon Bipolar Junction Transistor

  • Sung Ho Ahn;Gwang Min Sun
    • Journal of Radiation Protection and Research
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    • 제48권3호
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    • pp.124-130
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    • 2023
  • Background: When bipolar junction transistors (BJTs) are used as switches, their switching characteristics can be deteriorated because the recombination time of the minority carriers is long during turn-off transient. When BJTs operate as low frequency switches, the power dissipation in the on-state is large. However, when BJTs operate as high frequency switches, the power dissipation during switching transients increases rapidly. Materials and Methods: When silicon (Si) BJTs are irradiated by fast neutrons, defects occur in the Si bulk, shortening the lifetime of the minority carriers. Fast neutron irradiation mainly creates displacement damage in the Si bulk rather than a total ionization dose effect. Defects caused by fast neutron irradiation shorten the lifetime of minority carriers of BJTs. Furthermore, these defects change the switching characteristics of BJTs. Results and Discussion: In this study, experimental results on the switching characteristics of a pnp Si BJT before and after fast neutron irradiation are presented. The results show that the switching characteristics are improved by fast neutron irradiation, but power dissipation in the on-state is large when the fast neutrons are irradiated excessively. Conclusion: The switching characteristics of a pnp Si BJT were improved by fast neutron irradiation.