• 한국자기학회:학술대회 개요집
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• 한국자기학회 2002년도 동계연구발표회 논문개요집
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• pp.186-187
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• 2002

Recently, there has been much interest in magnetic thin film patterned in submicron scale because of possible ultrahigh density storage media or logical device applications [1-3]. Various geometries such as rectangle, circle, ring and ellipse type dots have been studied to find the shape showing stable switching behavior from repeated cycles. However, rectangle and circle types may not be suitable for device applications because they have two uncontrollable different magnetization reversal modes: C state and S state, resulting in different coercivity and irreproducible switching[4]. (omitted)

• 전력전자학회:학술대회논문집
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• 전력전자학회 2015년도 전력전자학술대회 논문집
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• pp.159-160
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• 2015

Recently, it is increased to use the portable device with small size. It is also increasing for demand of a small size adapter. To reduce the size of components, switching frequency has to be increased. But it causes higher switching loss and temperature of components. Especially, the temperature of adapter must be limited because adapter can be easily touched when portable device is being charged. To reduce temperature of adapter, high efficiency is essential. To solve this problem, this paper proposes design of resonance frequency optimization for LLC converter with high efficiency and low temperature of passive components.

• Journal of Power Electronics
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• 제17권6호
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• pp.1490-1499
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• 2017

The modular multilevel converter (MMC) is generally considered to be a promising topology for medium-voltage and high-voltage applications. However, in order to apply it to high-power applications, a huge number of switching devices is essential. The numerous switching devices lead to considerable switching losses, high cost and a larger heat sink for each of the switching device. In order to reduce the switching losses of a MMC, this paper analyzes the performance of the conventional discontinuous pulse-width modulation (DPWM) method and its efficiency. In addition, it proposes a modified novel DPWM method for advanced switching losses reduction. The novel DPWM scheme includes an additional rotation method for voltage-balancing and power distribution among sub modules (SMs). Simulation and experimental results verify the effectiveness and performance of the proposed modulation method in terms of its switching losses reduction capability.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.357-358
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• 2013

The non-linear characteristics of ON states are important for the application to the high density cross-point memory industry because the sneak current in neighbor cells occurred during reading, erasing, and writing process. Kw of above 20 in ON states, which is the writing current @ Vwrite/the current @ 1/2Vwrite, was required in cross-point ReRAM memory industry. The high current density non-linear IV curve of ZnSe selector was shown and the ALD HfO2 switching device has the linear properties of ON states and the compliance current of 100 uA. To evaluate the performance of the selection device, we connected itto HfO2 switching device in series. The bottom electrode of the selection device was connected to the top electrode of the RRAM. All of the bias was applied with respect to the top electrode of the selection device, whereas the bottom electrode of the RRAM was grounded. In the cross-point application, 1/2Vwrite and -1/2Vwrite were applied to the word-line and bit-line, respectively, which were connected to the selected cell, and a zero bias was applied to the unselected word-lines and bit-lines. The current @ 1/2Vwrite of the unselected cells was blocked by the selection device, thus eliminating the sneak path and obtaining a writing voltage margin. Using this method, the writing voltage margin was analyzed on the basis of the memory size.

• 한국정보통신학회논문지
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• 제10권1호
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• pp.96-103
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• 2006

본 논문은 고주파 단상 부스트 컨버터의 스위칭 손실을 감소시킬 수 있는 새로운 방식을 제안한다. 이것은 기존의 부스트 컨버터에 별도의 스위칭 장치를 첨가한 형태를 가진다. 원래의 고속 스위칭 장치는 변함없이 전력변환을 수행하지만, 새로이 부가된 장치는 저속으로 동작하면서 고속 스위칭 소자에 흐르는 전류의 대부분을 우회시켜 스위칭 손실을 감소시킨다. 제안된 방법의 제어시스템은 매우 간단하다. 제어기는 멀티바이브레이터, 비교기 및 AND 게이트로 구성되고, 스위칭 소자의 오프 지속시간이 멀티바이브레이터에 의해 일정하게 유지되므로 최대 스위칭 주파수는 별도의 클럭 발생기 없이 제한된다. 본 논문에서는 제안된 컨버터의 형상, 설계 등을 언급하고 컴퓨터 시뮬레이션을 사용하여 제안된 방법의 스위칭 손실 감소, 효율향상에 관한 유효성을 입증한다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.285-288
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• 1998

In this paper, we present mSROS(Micro-Scalable Realtime Operating System) to be applied commonly to the device controller systems in the HANbit ACE256 system. The device controller systems in HANbit ACE256 system are organized as many kinds of device controller. Applying modified PPOS(Peripheral Processor Operating System)which is an operating system for devices of the TDX-10 switching system to the firmwares for them, the inefficiency in development and maintenance exists inherently. To remove the inefficiency nd to improve the performqance of firmwares, we build a common operating system platform that including multi-tasking microkernel so that the firmwares among devices can acquire convenient development and cheap cost of maintencance. Especially, building a virtual machine as a development methodology, it is possible to remove dependency from the kernel so that any kinds of commercial real-time kernels can be used in mSROS as a basic kernel. The virtual machine in mSROS is compatible with the API of SROS(Scalable Realtime Operating System), PPOS, and CROS(Concurrent Realtime Operating System).

• Journal of Information Display
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• 제10권4호
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• pp.184-187
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• 2009

A liquid crystal device with switchable dynamic and memory modes was investigated and developed. The proposed device reveals the splay, $\pi$-twist, and bend states via selective switching among them. In the dynamic mode, the device is operated in the bend state, which exhibits a wide viewing-angle and a fast-response-time due to its self-compensated bend structure and flow-accelerated fast response time, respectively. In the memory mode, the permanent memory characteristics in the splay and $\pi$-twist sates are obtained, respectively. The switching mechanisms of the tristate device are also proposed.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.600-603
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• 2009

The liquid crystal device with switchable dynamic mode and memory mode has been investigated and developed. The proposed device reveals splay, ${\pi}$ twist and bend states by selective switching among them. In the dynamic mode, this device is operated in the bend state which exhibits the wide view angle and fast response time properties due to the self-compensated bend structure and flow accelerated fast response time. In the memory mode, the permanent memory characteristics in the splay and ${\pi}$ twist sates are obtained, respectively. The switching mechanisms of the tristate device are also proposed.

• 한국컴퓨터정보학회논문지
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• 제8권3호
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• pp.163-169
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• 2003

본 연구에서 개발하고자 하는 기기의 모델은 마이크로 컨트롤을 이용하여 모터속도를 제어 할 수 있는 출력 전자 변속기로써, 자동제어 방식을 사용하여 Switching frequency를 1,000MHz까지 가능한 형태로 변환하는 자동 변속장치이다. 연속출력전류는 5A, 11A, 18A, 25A, 35A, 50A이며, 사용되는 전압은 9V에서 최대 18V까지 가능하도록 설계하였다. Micro-controller 의 software와 hardware의 블록 다아이그램을 고안하였으며, 전력손실을 막기 위해 자동적으로 3.7V에서 Auto Cut-Off기능이 있도록 구성하였다.

• Nuclear Engineering and Technology
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• 제49권1호
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• pp.209-215
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• 2017

Fast neutron irradiation was used to improve the switching speed of a 600-V nonpunch-through insulated gate bipolar transistor. Fast neutron irradiation was carried out at 30-MeV energy in doses of $1{\times}10^8n/cm^2$, $1{\times}10^9n/cm^2$, $1{\times}10^{10}n/cm^2$, and $1{\times}10^{11}n/cm^2$. Electrical characteristics such as current-voltage, forward on-state voltage drop, and switching speed of the device were analyzed and compared with those prior to irradiation. The on-state voltage drop of the initial devices prior to irradiation was 2.08 V, which increased to 2.10 V, 2.20 V, 2.3 V, and 2.4 V, respectively, depending on the irradiation dose. This effect arises because of the lattice defects generated by the fast neutrons. In particular, the turnoff delay time was reduced to 92 nanoseconds, 45% of that prior to irradiation, which means there is a substantial improvement in the switching speed of the device.