• Proceedings of the KIPE Conference
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• 2015.11a
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• pp.85-86
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• 2015

In this paper, the bidirectional DC-DC converter is composed of the 900V Silicon-Carbide(SiC) devices to get high efficiency. The 900V SiC device is better than a similar current rated traditional SiC device. it has a lower drain-source resistance and output capacitance. therefore it can reduce the switching and the conduction losses of the DC-DC converter. The experimental results verify the improvement of efficiency and usefulness of 900V SiC device.

• Journal of Power Electronics
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• v.17 no.4
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• pp.874-883
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• 2017

T-type isolated DC/DC converters have recently attracted attention due to their numerous advantages, including few components, low cost, and symmetrical operation of transformers. This study proposes an improved control strategy for increasing the efficiency of T-type isolated DC/DC converters. Under the proposed strategy, the primary circulating current flows through the auxiliary switches (metal-oxide-semiconductor field-effect transistors) instead of their body diodes in free-wheeling periods. Such feature can reduce conduction losses, thereby improving the efficiency of T-type isolated DC/DC converters. The operation principles and performances of T-type isolated DC/DC converters under the proposed control strategy are analyzed in detail and verified through the simulation and experimental results.

• Proceedings of the KIPE Conference
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• 2019.07a
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• pp.8-10
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• 2019

In this paper, a bidirectional three-phase push pull converter is analyzed for the high power, wide voltage range applications. From comparison analysis of two switching methods: PWM plus phase-shift (PPS) and dual-asymmetric PWM (DAPWM) with the effect of dead-time, the proposed hybrid control is aimed to reduce the circulating current under wide voltage range operation. Value of leakage inductance effect to the peak current value, current stress and conduction loss in facing the load variation. Trade-off between power range and slew rate of transformer current was analyzed for properly selecting value of the transformer leakage inductance. Experimental results from a 22-kW prototype are provided to validate the proposed concept.

• KEPCO Journal on Electric Power and Energy
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• v.4 no.2
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• pp.47-53
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• 2018

VSC technology is now well established in HVDC and is, in many respects, complementary to the older Line Commutated Converter (LCC) technology. Despite the various advantages of VSC technology, VSC HVDC stations have higher power losses than LCC stations. Although the relative advantages and disadvantages are well known within the industry, there have been very few attempts to quantify these factors on an objective basis. This paper describes methods to determine the operating losses of every component in the valve of VSC-HVDC system. The losses of the valve, including both conduction losses and switching losses, are treated in detail.

• The Transactions of the Korean Institute of Power Electronics
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• v.26 no.4
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• pp.263-270
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• 2021

Active AC/DC converters with PWM operation are utilized to regulate rectified DC bus voltage of a permanent magnet synchronous generator in the maritime DC power system. A DC bus voltage regulation strategy that exploits the six-step operation is proposed in this study. Compared with that of the PWM operation, switching loss of the converter can be significantly reduced under the six-step operation. Moreover, conduction loss can also be reduced due to the high modulation index and reduced flux-weakening current of the six-step operation. A controller is used for the proposed DC bus voltage regulation strategy to verify its validity with the simulation and experimental setup. The simulation and the experimental test results showed that the converter loss reduces to a maximum of 70% and 19%, respectively.

• Journal of the Korean Society of Industry Convergence
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• v.24 no.4_1
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• pp.411-419
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• 2021

In this study, IGBT_Total_Loss and DIODE_Total_Loss were used to analyze the slope of the junction temperature for each section for temperature and duty variables in order to simply calculate the junction temperature of the power semiconductor (IGBT). As a result of the calculation, IGBT_Max_Junction_Temp and DIODE_Max_Junction_Temp form a proportional relationship with temperature for each duty. This simulation data shows that the power loss of a power semiconductor is calculated in a complex manner according to the current dependence index, voltage dependence index, and temperature coefficient. By applying the slope for each condition and section, the junction temperature of the power semiconductor can be calculated simply.

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.108-113
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• 2021

In this paper, a totem pole PFC was structured in two methods with FET and diode for low-speed switch while GaN FET was used for high-speed switch. Internal power loss, power conversion efficiency and steady-state characteristics of the two methods were compared in the totem pole bridgeless PFC circuit which is widely applied in large-capacity and high-efficiency switching rectifier of 500W or more. In order to compare and confirm the steady-state characteristics under equal conditions, a 2kW class totem pole bridgeless PFC was constructed and the experimental results were analyzed. From the experimental results, it was confirmed that the low-speed switch operation has a large difference in efficiency due to the internal conduction loss of the low-speed switch at a low input voltage. Especially, input power factor and load characteristic showed no difference regardless of the low-speed switch operation.

• Electronics and Telecommunications Trends
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• v.38 no.1
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• pp.36-45
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• 2023

The increasing demand for ultra-high efficiency of compact power conversion systems for electric vehicle applications has brought GaN power semiconductors to the fore due to their low conduction losses and fast switching speed. In particular, the development of materials and core device processes contributed to remarkable results regarding the publication of vertical GaN power devices with high breakdown voltage. This paper reviews recent advances on GaN material technology and vertical GaN power device technology. The GaN material technology covers the latest technological trends and GaN epitaxial growth technology, while the vertical GaN power device technology examines diodes, Trench FETs, JFETs, and FinFETs and reviews the vertical GaN PiN diode technology developed by ETRI.

• Proceedings of the KIPE Conference
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• 2020.08a
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• pp.79-81
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• 2020

임계모드 (Critical conduction mode, CrM) 동작을 하는 PFC 컨버터는 주파수 변동을 통한 Valley switching 동작으로 인하여 높은 효율 및 양호한 EMI 특성을 가진다. 하지만 Peak 부하가 큰 시스템에서 CrM 설계를 하게 되면 정격부하에서 비교적 높은 주파수의 동작이 불가피하여 시스템 효율이 나빠지고 높은 DC-bias 확보를 위해 인덕터 크기가 커지게 된다. 따라서 본 논문에서는 고효율 및 인덕터 사이즈 저감을 위한 임계모드에서 동작하는 두 개의 교차형 PFC 컨버터의 병렬 구동에 대해서 이야기하고자 한다.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.993-994
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• 2008

Electrochromic (EC) devices are capable of reversibly changing their optical properties upon charge injection and extraction induced by the external voltage. The characteristics of the EC device, such as low power consumption, high coloration efficiency, and memory effects under open circuit status, make them suitable for use in a variety of applications including smart windows and electronic papers. Coloration due to reduction or oxidation of redox chromophores can be used for EC devices (e-paper), but the switching time is slow (second level). Recently, with increasing demand for the low cost, lightweight flat panel display with paper-like readability (electronic paper), an EC display technology based on dye-modified $TiO_2$ nanoparticle electrode was developed. A well known organic dye molecule, viologen, was adsorbed on the surface of a mesoporous $TiO_2$ nanoparticle film to form the EC electrode. On the other hand, ZnO is a wide bandgap II-VI semiconductor which has been applied in many fields such as UV lasers, field effect transistors and transparent conductors. The bandgap of the bulk ZnO is about 3.37 eV, which is close to that of the $TiO_2$ (3.4 eV). As a traditional transparent conductor, ZnO has excellent electron transport properties, even in ZnO nanoparticle films. In the past few years, one-dimension (1D) nanostructures of ZnO have attracted extensive research interest. In particular, 1D ZnO nanowires renders much better electron transportation capability by providing a direct conduction path for electron transport and greatly reducing the number of grain boundaries. These unique advantages make ZnO nanowires a promising matrix electrode for EC dye molecule loading. ZnO nanowires grow vertically from the substrate and form a dense array (Fig. 1). The ZnO nanowires show regular hexagonal cross section and the average diameter of the ZnO nanowires is about 100 nm. The cross-section image of the ZnO nanowires array (Fig. 1) indicates that the length of the ZnO nanowires is about $6\;{\mu}m$. From one on/off cycle of the ZnO EC cell (Fig. 2). We can see that, the switching time of a ZnO nanowire electrode EC cell with an active area of $1\;{\times}\;1\;cm^2$ is 170 ms and 142 ms for coloration and bleaching, respectively. The coloration and bleaching time is faster compared to the $TiO_2$ mesoporous EC devices with both coloration and bleaching time of about 250 ms for a device with an active area of $2.5\;cm^2$. With further optimization, it is possible that the response time can reach ten(s) of millisecond, i.e. capable of displaying video. Fig. 3 shows a prototype with two different transmittance states. It can be seen that good contrast was obtained. The retention was at least a few hours for these prototypes. Being an oxide, ZnO is oxidation resistant, i.e. it is more durable for field emission cathode. ZnO nanotetropods were also applied to realize the first prototype triode field emission device, making use of scattered surface-conduction electrons for field emission (Fig. 4). The device has a high efficiency (field emitted electron to total electron ratio) of about 60%. With this high efficiency, we were able to fabricate some prototype displays (Fig. 5 showing some alphanumerical symbols). ZnO tetrapods have four legs, which guarantees that there is one leg always pointing upward, even using screen printing method to fabricate the cathode.