• Proceedings of the KIPE Conference
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• 2016.07a
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• pp.361-362
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• 2016

Presented in this paper is the design of a high voltage switch module made up of MOSFETs, pulse transformers and their gate driver circuits compactly fitted onto a single PCB module. The ease by which the switch modules can be configured (series stacking and/or parallel stacking) to meet future load variations allows for flexible operation of this design. In addition, the detailed implementation of the gate driver circuit for reliable and easier switch synchronization is also described in this paper. The stored energy in the capacitor bank of a 15kV, 4.5kJ/s peak power capacitor charger was discharged using the developed high voltage switch, and by experimental results, the operation of the proposed circuit was verified to be effectively used as a switch for pulse discharging.

• Proceedings of the KIEE Conference
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• 1998.07f
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• pp.2112-2114
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• 1998

A gate driver suitable for forced switch-mode power converters such as UPS and motor drive system is presented. The proposed gate driver uses regenerated snubber power and requires no separate power supply. This does not impose any additional complexity on the main switch. Experimental results show that the proposed circuit is valid.

• Proceedings of the KIPE Conference
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• 2012.07a
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• pp.230-231
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• 2012

This paper describes a gate driver that operates numerous semiconductor switch in the solide-state pulsed power modulator. the proposed gate driver is designed to receive both the isolated drive-power and the on/off pulse signals through the transformer. Moreover, the IGBT-switch can be quickly turned off by adding protection circuit. Therefore it protects the IGBT-switch from the arc condition that frequently occurs in high-voltage pulse application. To comprehend operating characteristic of each IGBT-switch in pulse output condition, the device consisting of a high efficiency soft-switching capacitor charger and two series stacking IGBT-switch is developed. Finally, the relability of the proposed gate driver and the device for its test are proved through PSpice simulation and experiments.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.4 s.119
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• pp.364-371
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• 2007

In this paper, the design and implementation of high-power PIN diode switch modules and high-speed switch driver circuits are presented for Wibro base stations. To prevent isolation degradation due to parasitic inductances of conventional packaged PIN diodes and to improve power handling capabilities of the switch modules, bare diode chips are used and carefully placed in a PCB layout, which makes bonding wire inductances to be absorbed in the impedance of a transmission line. The switch module is designed and implemented to have a maximum performance while using a minimum number of the diodes. It shows an insertion loss of ${\sim}0.84\;dB$ and isolation of 80 dB or more at 2.35 GHz. The switch driver circuit is also fabricated and measured to have a switching speed of ${\sim}200\;nsec$. The power handling capability test demonstrates that the module operates normally even under a digitally modulated 70 W RF signal stress.

• Journal of Power Electronics
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• v.12 no.6
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• pp.954-959
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• 2012

A hybrid switch that uses a microelectromechanical system (MEMS) switch as a gate driver of a MOSFET is applied to an energy harvesting system. The power management circuit adopting the hybrid switch provides ultralow leakage, self-referencing, and high current handling capability. Measurements show that solar energy harvester circuit utilizing the MEMS-MOSFET hybrid switch accumulates energy and charges a battery or drive a resistive load without any constant power supply and reference voltage. The leakage current during energy accumulation is less than 10 pA. The power management circuit adopting the proposed hybrid switch is believed to be an ideal solution to self-powered wireless sensor nodes in smart grid systems.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.2 s.93
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• pp.167-173
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• 2005

The isolation of the series PIN diode switch is restricted by the parallel capacitance of PIN diode and the switch driver circuit limits switching speed of PIN diode switch. To overcome these problems, a high isolation and high switching speed Pin diode switch is proposed adapting the parallel resonant inductance and TTL compatible switch driver circuit. The measurement results of the 3 GHz PM diode switch show 1 GHz frequency band, less than 1.5 dB insertion loss, 65 dB isolation, more than 15 dB return loss and less than 30 ns switching speed. In particular the 3 GHz PIN diode switch using the parallel resonant inductance exhibits the improvement of isolation by 15 dB.

• Journal of Power Electronics
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• v.16 no.2
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• pp.786-797
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• 2016

This paper describes the design and development of a novel semiconductor-based solid-state switch for damped oscillating voltage test system. The proposed switch is configured as two identical series-connected switch stacks, each of which comprising 10 series-connected IGBT function units. Each unit consists of one IGBT, a gate driver, and an auxiliary voltage sharing circuit. A single switch stack can block 20 kV-rated high voltage, and two stacks in series are proven applicable to 30 kV-rated high voltage. The turn-on speed of the switch is approximately 250 ns. A flyback topology-based power supply system with a front-end power factor correction is built for the drive circuit by loosely inductively coupling each unit with a ferrite core to the primary side of a power generator to obtain the advantages of galvanic isolation and compact size. After the simulation, measurement, and estimation of the parasitic effect on the gate driver, a prototype is assembled and tested under different operating regimes. Experimental results are presented to demonstrate the performance of the developed prototype.

• Proceedings of the KIPE Conference
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• 2004.07b
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• pp.723-727
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• 2004

A new high-performance and low cost single switch energy recovery display driver for an AC plasma display panel (PDP) is proposed. Since it is composed of only one auxiliary power switch, two small inductors, and eight diodes compared with the conventional circuit consisting of four auxiliary power switches, two small inductors, eight power diodes, and two external capacitors, it features a much simpler structure and lower cost. Nevertheless, since the rootmean-square (RMS) value of the inductor current is very small, it also has very desirable advantages such as n low conduction loss and high efficiency. Furthermore, there are no serious voltage-drops caused by the large gas-discharge current with the aid of the discharge current compensation, which can also greatly reduce the current flowing through power switches and maintain the panel to light at n lower sustaining voltage. In addition, all main power switches are turned on under the zero-voltage switching (ZVS) and thus, the proposed circuit has a improved EMI, increased reliability, and high efficiency. Therefore, the proposed circuit will be well suited to the wall hanging PDP TV. To confirm the validity of the proposed circuit, circuit operations, features,and design considerations are presented and verified experimentally on a 6-inch PDP, 50kHz-switching frequency, and sustaining voltage 141V based prototype.

• The Transactions of the Korean Institute of Power Electronics
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• v.8 no.1
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• pp.24-29
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• 2003

A 120kV/70A high voltage switch has been installed at Korea Atomic Energy Research Institute(KAERI) in Taejon to supply power with Korea Superconducting Tokamak Advanced Research(KSTAR) Neutral Beam Injection(NBI) system. NBI system requires fast cutoff of the flower supply voltage for protection of the grid when arc detected and fast turn-on the voltage for sustaining the beam current. Therefore the high voltage switch and arc current detection circuit are important part of the NBI power supply. There are much need for high voltage solid state switches in NBI system and a broad area of applications. This switch consisted of 100 series connected MOSFETs and adopted the proposed simple and reliable gate drive circuit without bias supply. Various results taken during the commissioning phase with a 100kW resistive load and NBI source arc shown. This paper presents the detailed design of 120kV/70A high voltage MOSFETs switch and simple gate drive circuit. Problems with the high voltage switch and gate driver during thefabrication and test and solutions are also presented.

• Proceedings of the KIPE Conference
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• 2017.07a
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• pp.138-139
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• 2017

This paper describes the design and implementation of a trigger circuit which can be series connected with main pulse circuit for a xenon flash lamp driver. For generating high voltage, the trigger circuit is designed as an inductive energy storage pulsed power modulator with 2 state step-up circuit consisting of a boost converter and a flyback circuit. In order to guarantee pulse width, a resonant capacitor on the output side of the flyback circuit is designed. This capacitor limits the output voltage to protect the flyback switch. In addition, to protect another power supply of xenon flash lamp driver from trigger pulse, the high voltage transformer which can carry the full current of main pulse is designed. To verify the proposed design, the trigger circuit is developed with the specification of maximum 23 kV, 0.6 J/pulse output and tested with a xenon flash lamp driver consisting of a main pulse circuit and a simmer circuit.