• 대한기계학회논문집B
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• 제28권12호
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• pp.1632-1639
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• 2004

Numerical calculation has been performed to investigate the transport phenomena in the horizontal reactor which has two different gas inlets for MOCVD(metalorganic chemical vapor deposition). The full elliptic governing equations for continuity, momentum, energy and chemical species are solved by using the commercial code FLUENT. It is investigated how thermal characteristics, reactor geometry, and the operating parameters affect flow fields, mass fraction of each reactants. The numerical simulations demonstrate that flow rate of each species, inlet geometry of the reactor, and its distance from the susceptor as well as the inclination of upper wall of reactor can be used effectively to optimize reactor performance. The commonly used idealized boundary conditions are also investigated to predict flow phenomena in the actual deposition system.

• 반도체디스플레이기술학회지
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• 제15권1호
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• pp.41-46
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• 2016

In this study, gas flow and temperature distribution in the multi-wafer planetary CVD reactor for the Si epitaxial growth were analyzed. Although the structure of the reactor was simplified as the first step of the study, the three-dimensional analysis was performed taking all these considerations of the revolution of the susceptor and the rotation of satellites into account. From the analyses, a reasonable velocity field and temperature field were obtained. However, it was found that analyses including the upper structure of the reactor were required in order to obtain more realistic temperature results. DCS mole fraction above the satellite surface and the susceptor surface without satellite was compared in order to check the gas species mixing. We found that satellite rotation helped gases to mix in the reactor.

• Journal of Mechanical Science and Technology
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• 제19권6호
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• pp.1338-1346
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• 2005

Effects of thermal contact resistance between heater and susceptor, susceptor and graphite board in a MOCVD reactor on temperature distribution and film growth rate were analyzed. One-dimensional thermal resistance model considering thermal contact resistance and heat transfer area was made up at first to find the temperature drop at the surface of graphite board. This one-dimensional model predicted the temperature drop of 18K at the board surface. Temperature distribution of a reactor wall from the three-dimensional computational fluid dynamics analysis including the gap at the wafer position showed the temperature drop of 20K. Film growth rates of InP and GaAs were predicted using computational fluid dynamics technique with chemical reaction model. Temperature distribution from the three-dimensional heat transfer calculation was used as a thermal boundary condition to the film growth rate simulations. Temperature drop due to the thermal contact resistance affected to the GaAs film growth a little but not to the InP film growth.

• 한국결정성장학회지
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• 제24권6호
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• pp.242-245
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• 2014

탄화규소의 화학기상증착 중에 두께 균일성을 향상시키기 위하여 평행하게 회전하는 3단 서셉터를 포함하는 CVD 장치에 대하여 전산유체역학(CFD) 시뮬레이션을 수행하였다. 실제 증착 실험에서는 단 간의 두께 균일성은 상당히 만족스러웠으나 같은 단 위에서는 위치에 따라 두께가 균일하지 못한 3C-SiC 상이 얻어지는 것을 확인하였다. 불균일의 원인으로는 서셉터의 회전 속도에 따른 영향으로 판단되었다. CFD 결과로부터 단 간의 균일성을 향상시키기 위해서는 120도 분기 노즐을 주입구에 설치하는 것이 바람직할 것으로 판단되었으며 단 내의 균일도 향상은 회전 속도를 줄임으로써 가능할 것으로 생각된다. 이렇게 제작된 탄화규소가 증착된 흑연 부품은 고경도, 내산화성 및 분진 억제 특성을 갖고 있어서 반도체용 부품으로 사용될 수 있다.

• 한국결정성장학회지
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• 제10권1호
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• pp.5-12
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• 2000

Silicon carbide(SiC)는 뛰어난 전기적, 열적, 물리적 특성 때문에 내환경 전자소자용 반도체 재료로 널리 연구되고 있다. 본 연구에서는 화학기상증착법으로 단결정 6H-SiC 동종박막을 성장시키고 이의 성장 특성을 조사하였다. 특히, 몰리브덴 (Mo)-plate를 이용하여 SiC를 코팅하지 않은 graphite susceptor를 사용한 6H-SiC 동종박막 성장조건을 성공적으로 얻었다. 대기압 상태의 RF-유도가열식 챔버에서 CVD성장을 수행하였고, <1120> 방향으로 $3.5^{\circ}$off-axis된 기판을 사용하였다. 성장 박막의 결정성을 평가하기 위하여 Nomarski 관찰, 투과율 측정 , 라만 분광, XRD, 광발광(PL) 분광, 투과전자현미경(TEM) 측 정 등의 방법을 이용하였다. 이상과 같은 실험을 통하여, 본 연구에서는 성장온도 $1500^{\circ}C$, C/Si flow ratio ($C_3H_8$ 0.2 sccm, $SiH_4$ 0.3 sccm)인 성장조건에서 결정성이 가장 좋은 6H-SiC 동종박막을 얻을 수 있었다.

• Elastomers and Composites
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• 제32권5호
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• pp.318-324
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• 1997

Since the rigid and continuous networks of high-purity silica(white carbon) were relatively transparent to microwaves, high purity silica coupled with microwaves using a zirconia susceptor at room temperature and it was then heated to its melting temperature. The low-purity silica, contained small amount of impurities, yielded greater microwave absorption owing to easy motion of the interstitial alkali ions and it was then heated to its melting temperature. X-ray diffraction patterns of the low-purity silica were broader than those of the high-purity silica due to higher concentration of non-bridging bond and more deformed random network structure. In the vulcanization process of whitened or coloured rubber compound which is employing low-purity silica(white carbon) as a reinforcing filler, vulcanizate could be obtained effectively by microwave heating energy.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1997년도 Proceedings of the 12th KACG Technical Meeting and the 4th Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.269-274
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• 1997

Silicon carbide(SiC) epilayers were grown by a thermal CVD(chemical vapor deposition) process, and their crystalline properties were investigated. Especially, the growth conditions of 6H-Sic homoepitaxial layers were obtained using a SiC-uncoated graphite susceptor that utilized Mo-plates. In order to investigate the crystallinity of grown layers, Nomarski photograph, transmittance, XRD, Raman, PL and TEM measurements were used. The best quality of 6H-SiC epilayers was obtained in conditions of growth temperature 1500$^{\circ}C$ and C/Si ratio 2.0.

• 한국결정성장학회지
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• 제8권3호
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• pp.448-453
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• 1998

도립형 OMVPE 반응기를 레이저 라만 분광법을 사용하여 조사하였다. 운반기체인 질소나 수소의 순수한 회전 라만 분산 스펙트럼을 통해 반응기 내부의 축 중심 방향의 온도 분포를 정확히 측정할 수 있었다. 주입 기체의 유속과 반응기의 종횡비가 변수로 변화되었으며 실험결과, 기판 표면 근처의 수직방향 온도 구배를 크게 유지하기 위해서는 보다 빠른 기체 유속의 사용, 보다 큰 반응기 종횡비의 사용, 그리고 질소의 사용이 유리함을 알 수 있었다.

• 한국결정학회지
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• 제9권1호
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• pp.44-47
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• 1998

가정용 2.45GHz 마이크로파 오븐을 사용하여 A1 금속분말과 SiO2 분말간에 SHS방법에 의하여 산화/환원 반응을 통한 Al2O3 분말과 Si분말간의 복합체를 얻을 수 있었다. 분말간의 반응을 일으키기 위한 온도까지 승온시키기 위하여는 SiC 분말을 susceptor로 이용한 마이크로파 복합가열(Microwave Hybrid Heating)방법을 사용하여 분당 100℃의 승온 속도로 가열하였으며 반응은 850℃ 근처에서 일어났으며 가열 속도는 반응이 시작되면서 분당 200℃ 이상의 온도상승이 일어나면서 원하는 반응을 얻을 수 있었다.

• 반도체디스플레이기술학회지
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• 제17권4호
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• pp.91-96
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• 2018

In this study temperature distribution and gas flow inside a planetary type reactor in which a number of satellites on a spinning susceptor were rotating were analyzed using numerical simulation. Effects of flow rates on gas flow and temperature distribution were investigated in order to obtain design parameters. The commercial computational fluid dynamics software CFD-ACE+ was used in this study. The multiple-frame-of-reference was used to solve continuity, momentum and energy conservation equations which governed the transport phenomena inside the reactor. Kinetic theory was used to describe the physical properties of gas mixture. Effects of the rotation speed of the satellites was clearly seen when the inlet flow rate was small. Thickness of the boundary layer affected by the satellites rotation became very thin as the flow rate increased. The temperature field was little affected by the incoming flow rate of precursors.