• 제목/요약/키워드: Susceptor

검색결과 45건 처리시간 0.024초

백색 LED 증착용 MOCVD 장치에서 유도가열을 이용한 기판의 온도 균일도 향상에 관한 연구 (Study of Temperature Uniformity Improvement of Inductive Heating in MOCVD Systems to Deposit White LED)

  • 홍광기;양원균;주정훈;이승호;이태완
    • 한국표면공학회지
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    • 제43권6호
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    • pp.304-308
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    • 2010
  • Deposition temperature uniformity of GaN based MQW (multiple quantum well) layers is an important key which affects the wavelength uniformity of white LEDs. Temperature uniformity was assessed by infrared images for both cases of a static and a rotating susceptor. Rotating the susceptor at 2.5 rpm over the induction heater gave 4.3% of temperature non-uniformity. Temperature distribution of the graphite susceptor over the induction heater was numerically modelled and agreed with experimental results.

연속성장법에 의한 Silicon 단결정 연속성장 (Silicon Single Crystal Growth by Continuous Crystal Growth Method)

  • 인서환;최성철
    • 한국결정성장학회지
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    • 제3권2호
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    • pp.117-124
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    • 1993
  • 연속성장법은 crystal growth chamber의 상부에 있는 reservoir에서 원료 분말을 연속적으로 공급하면서 도가니 하부에 용융대를 형성시킨 후, 종자결정을 용융대에 dipping하여 회전시키면서 아래로 끌어내려 단결정을 성장시키는 방법이다. 본 연구에서는 연속 성장법을 이용하여 silicon 단결정을 육성시켰으며 연속성장에 영향을 미치는 인자는 critical melt level, 원료공급속도, 성장속도, graphite crucible과 gruphite susceptor의 형태, work coil의 위치에 따른 graphite susceptor의 수직온도구배, 중력과 종자결정의 회전에 의한 원심력이 용융대의 안정화에 미치는 영향과 용융액 표면에서 일어나는 소결현상에 관해 고찰하였다.

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CVD 반응로 내부 회전 원판 주위의 유동 특성 연구 (A Study on the Flow Characteristics over the Rotating Susceptor in CVD Reactor)

  • 차관;김윤제;부진효
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2001년도 춘계학술대회논문집E
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    • pp.213-218
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    • 2001
  • The characteristics of the fluid flow and mass transfer in a vertical atmospheric pressure chemical vapor deposition (APCVD) are numerically studied. In order to get the optimal process parameters for the uniformity of deposition on a substrate, Navier-Stokes and energy equations have been solved for the pressure, mass-flow rate and temperature distribution in a CVD reactor. Results show that the thermal boundary condition at the reactor wall has an important effect in the formation of buoyancy-driven secondary cell when radiation effect is considered. Results also show that reduction of the buoyancy effect on the heated reactor improves the uniformity of deposition.

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화학기상 성장법에 의한 실리콘 부착에 관한 수치해석 (Numerical Analysis of Silicon Deposition in CVD Reactor)

  • 김인;백병준;윤정모;이철로
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2000년도 추계학술대회논문집B
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    • pp.359-364
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    • 2000
  • The fluid flow, heat transfer and the local mass fi-action of chemical species in the chemical vapor deposition(CVD) manufacturing process are numerically studied. The deposition of silicon from dilute silane is hydrogen carrier gas in a horizontal CVD reactor is investigated. The effect of inlet carrier gas velocity, mass fraction of silane, susceptor angle on the deposition thickness and uniformity was represented.

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GaN 에피층 성장을 위한 MOCVD 반응로의 가스 유동에 관한 수치해석 (Numerical Analysis on the Gas Flows in MOCVD Reactor for the Growth of GaN Epitaxy)

  • 신창용;백병준
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2001년도 추계학술대회논문집B
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    • pp.770-775
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    • 2001
  • Numerical calculation has been performed to investigate the fluid flow, heat transfer and local mass fraction of chemical species in the MOCVD (metalorganic chemical vapor deposition) manufacturing process. The mixing of reactants (trimethylgallium with hydrogen gas and ammonia) was presented by the concentration of each reactants to predict the uniformity of film growth. Effects of inlet size, location, mass flow rate and susceptor/cold wall tilt angle on the concentration were reported. The newly developed reactor, that precursors were supplied at separated inlet to prevent from premixing, was investigated to obtain the quantitative verification. As a results, the optimum mass flow rate, wall tilt angle and inlet conditions were proposed.

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수평 및 수직형 CVD 증착로의 실리콘 부착에 관한 수치해석 (Numerical Analysis of Silicon Deposition in Horizontal & Vertical CVD Reactor)

  • 김인;백병준
    • 대한기계학회논문집B
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    • 제26권3호
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    • pp.410-416
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    • 2002
  • The fluid flow, heat transfer and the local mass fraction of chemical species in the chemical vapor deposition(CVD) manufacturing process are studied numerically. Flow with a dilute precursor concentration of silane in hydrogen as the carrier gas enters to the reactor and deposits silicon onto the heated surface. The silicon deposition rate using silane is calculated in the horizontal or vertical, axisymmetric reactor. The effects of inlet carrier gas velocity, mass fraction of silane, susceptor angle and rotation of surface on the deposition rate are described.

온도 매개 변수의 컴퓨터 시뮬레이션을 통한 HF-CVD를 이용한 다이아몬드 증착 거동 분석 (Computer Simulation of Temperature Parameter for Diamond Formation by using Hot- Filament Chemical Vapor Deposition)

  • 송창원;이용희;최수석;황농문;김광호
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2018년도 춘계학술대회 논문집
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    • pp.54-54
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    • 2018
  • To optimize the deposition parameters of diamond films, the temperature, pressure, and distance between the filament and the susceptor need to be considered. However, it is difficult to precisely measure and predict the filament and susceptor temperature in relation to the applied power in the hot filament chemical vapor deposition (HFCVD) system. In this study the temperature distribution inside the system was numerically calculated for the applied powers of 12, 14, 16 and 18 kW. The applied power needed to achieve the appropriate temperature at a constant pressure and other conditions was deduced, and applied to actual experimental depositions. The numerical simulation was conducted using the commercial computational fluent dynamics software, ANSYS-FLUENT. To account for radiative heat-transfer in the HFCVD reactor, the discrete ordinate (DO) model was used. The temperatures of the filament surface and the susceptor at different power levels were predicted to be 2512 ~ 2802 K, and 1076 ~ 1198 K, respectively. Based on the numerical calculations, experiments were performed. The simulated temperatures for the filament surface were in good agreement with experimental temperatures measured using a 2-color pyrometer. The results showed that the highest deposition rate and the lowest deposition of non-diamond was obtained at a power of 16 kW.

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미스트화학기상증착 시스템의 Hot Zone 내 사파이어 기판 위치에 따른 β-Ga2O3 이종 박막 성장 거동 연구 (Growth Behavior of Heteroepitaxial β-Ga2O3 Thin Films According to the Sapphire Substrate Position in the Hot Zone of the Mist Chemical Vapor Deposition System)

  • 김경호;이희수;신윤지;정성민;배시영
    • 한국전기전자재료학회논문지
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    • 제36권5호
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    • pp.500-504
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    • 2023
  • In this study, the heteroepitaxial thin film growth of β-Ga2O3 was studied according to the position of the susceptor in mist-CVD. The position of the susceptor and substrate was moved step by step from the center of the hot zone to the inlet of mist in the range of 0~50 mm. It was confirmed that the average thickness increased to 292 nm (D1), 521 nm (D2), and 580 nm (D3) as the position of the susceptor moved away from the center of the hot zone region. The thickness of the lower region of the substrate is increased compared to the upper region. The surface roughness of the lower region of the substrate also increased because the nucleation density increased due to the increase in the lifetime of the mist droplets and the increased mist density. Therefore, thin film growth of β-Ga2O3 in mist-CVD is performed by appropriately adjusting the position of the susceptor (or substrate) in consideration of the mist velocity, evaporation amount, and temperature difference with the substrate, thereby determining the crystallinity of the thin film, the thickness distribution, and the thickness of the thin film. Therefore, these results can provide insights for optimizing the mist-CVD process and producing high-quality β-Ga2O3 thin films for various optical and electronic applications.

Raman 분광법에 의한 GaN OMVPE 전구체들의 열분해에 관한 연구 (Investigation of the pyrolysis of GaN OMVPE precursors by Raman spectroscopy)

  • 이순애;김유택;신무환;신건철;박진호
    • 한국결정성장학회지
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    • 제10권2호
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    • pp.116-121
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    • 2000
  • 도립형 OMVPE 반응기 내부의 기상 온도분포와 OMVPE 전구체들의 농도분포를 in-situ Raman 분광법으로 조사하였다. 운반기체의 회전 Raman 스펙트럼 분석을 통해 반응기 내부의 온도 분포를 측정하였고, 기판 근처에 수직적 온도 구배가 형성됨을 확인할 수 있었다. 또한 진동 Raman 스펙트럼 해석으로부터 전구체의 열분해도를 관찰살 수 있었다. $NH_3$의 경우 800 K 근처에서, TMGa의 경우 650 K 근처에서 열분해가 시작됨을 알 수 있었고, 기판에 매우 근접한 지역에서도 상당량의 전구체가 분해되지 않은 상태로 잔류함을 알 수 있었다.

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