• Carbon letters
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• 제25권
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• pp.84-88
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• 2018

At present, an important research area is the search for materials that are compatible with CMOS technology and achieve a satisfactory response rate and modulation efficiency. A strong local field of graphene surface plasmon polariton (SPP) can increase the interaction between light and graphene, reduce device size, and facilitate the integration of materials with CMOS. In this study, we design a new modulator of SPP-based cycle branch graphene waveguide. The structure comprises a primary waveguide of graphene-$LiNbO_3$-graphene, and a secondary cycle branch waveguide is etched on the surface of $LiNbO_3$. Part of the incident light in the primary waveguide enters the secondary waveguide, thus leading to a phase difference with the primary waveguide as reflected at the end of the branch and interaction coupling to enhance output light intensity. Through feature analysis, we discover that the area of the secondary waveguide shows significant localized fields and SPPs. Moreover, the cycle branch graphene waveguide can realize gain compensation, reduce transmission loss, and increase transmission distance. Numerical simulations show that the minimum effective mode field area is about $0.0130{\lambda}^2$, the gain coefficient is about $700cm^{-1}$, and the quality factor can reach 150. The structure can realize the mode field limits of deep subwavelength and achieve a good comprehensive performance.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1640-1644
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• 2006

The first issue that should be overcome in copper process is its poor adhesive strength between pure copper film and glass substrate. In this study, defining the adhesive strength of pure copper film on various substrates and clarifying the key deposition parameters are presented for the investigation of copper process. First, using different kinds of surface plasma treatments were studied and the results showed that the adhesive strength was not improved even though the roughness of glass substrate surface was increased. Second, adding an adhesive layer between glass substrate and pure copper film was used to enhance the adhesion. Based on the data in the present paper, adopting copper alloy film as an adhesive layer can have capability preventing peeling problem in copper process. Besides, Cu/Cu alloy structure could be etched with the same etchant with better taper angle than the one with single layer of Cu. Unlike Cu/Mo structure, there is no residual problem for Cu/Cu alloy structure during etching process. Finally, this structure was examined in electrical test without significant difference in comparison with the conventional metal process.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.147.2-148
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• 2016

Light management technology is very important for thin film solar cells, which can reduce optical reflection from the surface of thin film solar cells or enhance optical path, increasing the absorption of the incident solar light. Using proper light trapping structures in hydrogenated amorphous silicon (a-Si:H) solar cells, the thickness of absorber layers can be reduced. Instead, the internal electric field in the absorber can be strengthened, which helps to collect photon generated carriers very effectively and to reduce light-induced loss under long-term light exposure. In this work, we introduced a chemical etching technology to make honey-comb textures on glass substrates and analyzed the optical properties for the textured surface such as transmission, reflection and scattering effects. Using ray optics and finite difference time domain method (FDTD) we represented the behaviors of light waves near the etched surfaces of the glass substrates and discussed to obtain haze parameters for the different honey-comb structures. The simulation results showed that high haze values were maintained up to the long wavelength range over 700 nm, and with the proper design of the honey-comb structure, reflection or transmission of the glass substrates can be enhanced, which will be very useful for the multi-junction (tandem or triple junction) thin film a-Si:H solar cells.

• JSTS:Journal of Semiconductor Technology and Science
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• 제6권3호
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• pp.199-205
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• 2006

Patterned sapphire substrates (PSS) were fabricated by a simple wet etching process with $SiO_2$ stripe masks and a mixed solution of $H_2SO_4$ and $H_3PO_4$. GaN layers were epitaxially grown on the PSS under the optimized 2-step growth condition of metalorganic vapor deposition. During the 1st growth step, GaN layers with triangular cross sections were grown on the selected area of the surface of the PSS, and in the 2nd growth step, the GaN layers were laterally grown and coalesced with neighboring GaN layers. The density of threading dislocations on the surface of the coalesced GaN layer was $2{\sim}4\;{\times}\;10^7\;cm^{-2}$ over the entire region. The epitaxial structure of near-UV light emitting diode (LED) was grown over the GaN layers on the PSS. The internal quantum efficiency and the extraction efficiency of the LED structure grown on the PSS were remarkably increased when compared to the conventional LED structure grown on the flat sapphire substrate. The reduction in TD density and the decrease in the number of times of total internal reflections of the light flux are mainly attributed due to high level of scattering on the PSS.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 추계총회 및 학술대회 논문집
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• pp.171-171
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• 2012

In this study, we fabricated the high-brightness AlGaInP-based red light emitting diodes (LED)s using by direct printing technique and inductive coupled plasma (ICP) reactive ion etching (RIE). In general, surface roughening was fabricated by wet etching process to improve the light extraction efficiency of AlGaInP-based red LED. However, a structure of the surface roughening, which was fabricated by wet etching, was tiled cone-shape after wet etching process due to crystal structure of AlGaInP materials, which was used as top-layer of red LED. This tilted cone-shape of surface roughening can improve the light extraction of LED, but it caused a loss of the light extraction efficiency of LED. So, in this study, we fabricated perfectly cone shaped pattern using direct printing and dry etching process to maximize the light extraction efficiency of LED. Both submicron pattern and micron pattern was formed on the surface of red LED to compare the enhancement effect of light extraction efficiency of LEDs according to the diameter of sapphire patterns.After patterning process using direct printing and ICP-RIE proceeded on the red LED, light output was enhanced up to 10 % than that of red LED with wet etched structure. This enhancement of light extraction of red LED was maintained after packaging process. And as a result of analyze of current-voltage characteristic, there is no electrical degradation of LED.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.402.1-402.1
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• 2014

Photonic force microscopy (PFM) is an optical tweezers-based scanning probe microscopy, which measures the forces in the range of fN to pN. The low stiffness leads proper to measure single molecular interaction. We introduce a novel photonic force microscopy to stably map various chemical properties as well as topographic information, utilizing weak molecular bond between probe and object's surface. First, we installed stable optical tweezers instrument, where an IR laser with 1064 nm wavelength was used as trapping source to reduce damage to biological sample. To manipulate trapped material, electric driven two-axis mirrors were used for x, y directional probe scanning and a piezo stage for z directional probe scanning. For resolution test, probe scans with vertical direction repeatedly at the same lateral position, where the vertical resolution is ~25 nm. To obtain the topography of surface which is etched glass, trapped bead scans 3-dimensionally and measures the contact position in each cycle. To acquire the chemical mapping, we design the DNA oligonucleotide pairs combining as a zipping structure, where one is attached at the surface of bead and other is arranged on surface. We measured the rupture force of molecular bonding to investigate chemical properties on the surface with various loading rate. We expect this system can realize a high-resolution multi-functional imaging technique able to acquire topographic map of objects and to distinguish difference of chemical properties between these objects simultaneously.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2003년도 춘계학술대회논문집
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• pp.448-451
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• 2003

This study describes a new maskless nano-fabrication technique of Si (100) using the combination of nanometer-scale mechanical forming by nano-indenter XP and KOH wet etching. First the surface of a Si (100) specimen was machined by using the nano-machining system, which utilizes the mechanism of the nano-indenter XP. Next, the specimen was etched by KOH solution. After the etching process, the convex structure or deeper hole is made because of masking or promotion effect of the affected layer generated by nano-machining. On the basis of this interesting fact, some sample structures were fabricated.

• 전자공학회논문지D
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• 제34D권9호
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• pp.64-71
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• 1997

A new etching technique of meltback was investigated for GaAs lensed optical devices with selective windows opending in the LPE (liquid phase epitaxy) system. In the meltback process, the etch depth and the etch shape were controlled by the degree of under-saturation, etch time and other parameters. A GaAs/AlGaAs DH layer was grown on the selectively etched hemispherical well for optical device application such as lensed surface emitting LED. The regrowth process were related with the coolin grate and the well to well spacing. A novel surface emitting LED with hemispherical AlGaAs lens was fabricated using the meltbakc and regrowth as the key process for AlaAs lens array. The light emitting efficiency of the LED was upto three times higher than the similar structure LED without lens. The meltback and regrowth technique was applicable to manufacture the optical device in LPE.

• 한국컴퓨터정보학회논문지
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• 제5권4호
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• pp.102-105
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• 2000

외부 베이스 표면에 형성되는 표면 재결합 상태의 불안정성을 개선하기 위해 에미터 ledge 구조로 제작된 InGaP/GaAs HBT의 신뢰도 측정을 위해 고온에서 오랜 시간동안 정전류 스트레스를 인가하였다. 553K, 533K, 513K에서 콜렉터 전류 24㎃로 스트레스를 인가해 전류이득의 열화를 관찰하였다. 그 결과 EA＝1.97eV, WTTF＝4.8$\times$108시간(14$0^{\circ}C$)을 구하였다. InGaP/GaAs HBT의 열화 원인은 베이스 도펀트인 C의 확산으로 추정된다.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2005년도 춘계학술대회 논문집
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• pp.225-228
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• 2005

The purpose of this study is to investigate effects of the plastic/elastic deformation energy on wet etching characterization on the surface of material by using the nanoindentation and HF wet etching technique. Indents were made on the surface of Pyrex 7740 glass by the hyperfine indentation process with a Berkovich diamond indenter, and they were etched in $50\;wt\%$ HF solution. After etching process, convex structure was obtained due to the deformation-induced hillock phenomena. In this study, effects of indentation process parameters (normal load, loading rate) on the morphologies of the indented surfaces after isotopic etching were investigated from an angle of deformation energies.