• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.12
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• pp.2914-2920
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• 2013

In this paper, we prepared the samples with the heat-treated substrate by means of co-evaporation method. The samples prepared with heat-treated substrate of $500^{\circ}C$showed the vacancy on the surface, and it could be prevented by Se ambient condition. The samples prepared with variable heat-treated substrates such as $430^{\circ}C$, $460^{\circ}C$, $480^{\circ}C$ and $500^{\circ}C$ showed the increase of grain resulted to the increase of the density. Based on the XRD analysis, the heat treatment could remove the Cu2Se phase of the samples, but it didn't affect the absorption index of the samples. We, therefore, conclude the absorption index is not affected by heat treatment and is controlled by the thickness of the sample.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1278-1285
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• 2003

This study investigated the phase transformation of the REBa$_2$Cu$_3$$O_{7-x}$ (RE=Nd, Gd, Dy) superconductor, and CCT (Continuous-Cooling-Transformation) along with the TTT (Time-Temperature-Transformation) diagrams are suggested according to the isothermal and continuous cooling heat-treatments. The peritectic temperature of the 123 phases decreased approximately 3$0^{\circ}C$ when the ionic radius of the rare-earth elements was reduced. The optimum cooling rate where BC and Cu-free phases do not exist was 0.001$^{\circ}C$/s. At this cooling late, the 123 phase grew with a c-axis Perpendicular to the surface and had a well-distributed 211 phase. When the oxygen partial pressure was reduced Outing isothermal heat-treatment, the formation temperature of the 211 phase decreased. In addition, the formation temperature of the 123 phases decreased from 100$0^{\circ}C$ (Nd-123) to 9$25^{\circ}C$ (Gd-123), and finally 875$^{\circ}C$ (Dy-123) according to the decrease in the ionic radius of the tare-earth elements. Compared to Nd-123, Gd- and Dy-123 had a better texture with a well-distributed 211 phase.e.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1463-1464
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• 2011

An indium thin oxide(ITO) is used as a substrate material for organic light-emitting diodes(OLEDs) and organic photovoltaic cells. This study examined the effects of an $O_2$ plasma treatment on the electrical properties of an organic photovoltaic cell. The four probe method and Atomic force microscope(AFM) revealed the lowest surface resistance at the plasma treatment intensity of 250 [W] and the lowest average surface roughness of 2.0 [nm] at 250 [W]. The lowest average resistance of 17 [${\Omega}$/sq] was also observed at 250 [W] 40 [sec]. The $O_2$ plasma treatment device and a basic device in a structure of CuPc/C60/BCP/Al on ITO glass were fabricated by thermal evaporation, respectively. When the $O_2$ plasma treatment was used to the ITO, The experimental results revealed that the power conversion efficiency(PCE) indicated 65 [%] higher in the PCE than that without the plasma treatment.

• Journal of the Korean Society for Heat Treatment
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• v.30 no.2
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• pp.61-66
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• 2017

$SnO_2$ was electrodeposited on nodule-type Cu foil at varing current density and electrodeposition time. Unlike the previous research results, when the anodic current is applied, the $SnO_2$ layer was not electrodeposited and the substrate is corroded. When the cathodic current was applied, the $SnO_2$ layer could be successfully deposited. At this time, the surface microstructure of the powdery type was observed, which showed similar crystallinity to amorphous and had a very large surface area. Crystallinity increased after low-temperature heat treatment at $250^{\circ}C$ or lower. As a result of evaluating the charge/discharge performances as an anode material for lithium ion battery, it was confirmed that the capacity of the heat treated $SnO_2$ was increased more than 2 times, but it still showed a limit point showing initial low coulombic efficiency and low cyclability. However, it was confirmed that the battery performances may be enhanced through optimizing the electrodeposition process and introducing post heat treatment.

• Journal of the Korean institute of surface engineering
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• v.55 no.3
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• pp.143-155
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• 2022

Ceramic oxide layers successfully were formed on the surface of cast Al alloys with high Si contents using plasma electrolytic oxidation (PEO) process in electrolytes containing Na₂SiO₃, NaOH, and additives. The microstructure of the oxide layers was systematically analyzed using scanning electron microscopy (SEM), cross-sectional transmission electron microscopy (TEM), X-ray diffraction patterns (XRD), and energy X-ray dispersive spectroscopy (EDS). XRD analysis indicated that the PEO untreated high-silicon Al alloys (i.e., 17.1 and 11.7 wt.% Si) consist of Al, Si and Al₂Cu phases whereas Al₂Cu phase selectively disappeared after PEO treatment. PEO process yielded an amorphous oxide layer with few second phases including γ-Al₂O₃ and Fe-rich phases. The corrosion behaviors of high-silicon Al alloys treated by PEO process were investigated using electrochemical impedance spectroscopy (EIS) and other electrochemical techniques (i.e., open circuit potential and polarization curve). Electroanalytical studies indicated that high-silicon Al alloys treated by PEO process have greater corrosion resistance than high-silicon alloys untreated by PEO process.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.165-168
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• 2000

We fabricated ramp-edge Josephson junctions with barriers formed by interface treatments instead of epitaxially grown barrier layers. A low-dielectric Sr$_2$AlTaO$_6$(SAT) layer was used as an ion-milling mask as well as an insulating layer for the ramp-edge junctions. An ion-milled YBa$_2$Cu$_3$O$_{7-x}$ (YBCO)-edge surface was not exposed to solvent through all fabrication procedures. The barriers were produced by structural modification at the edge of the YBCO base electrode using high energy ion-beam treatment prior to deposition of the YBCO counter electrode. We investigated the effects of high energy ion-beam treatment, annealing, and counter electrode deposition temperature on the characteristics of the interface-controlled Josephson junctions. The junction parameters such as T$_c$, I$_c$c, R$_n$ were measured and discussed in relation to the barrier layer depending on the process parameters.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.179-183
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• 2000

For a ground plane in high-temperature superconducting ramp-edge junction devices, YBa$_2$Cu$_3$O$_{7-{\delta}}$/SrTiO$_3$/YBa$_2$Cu$_3$O$_{7-{\delta}}$ multilayer structures were fabricated using pulsed laser deposition and ECR ion milling. Various process parameters were adjusted to enhance the device characteristics. By etching the STO layer to form a tapered edge of about 15$^{\circ}$ and in-situ RF plasma treatment of bottom YBCO surface prior to deposition of top YBCO, the top-to-bottom YBCO showed T$_c$ of 75${\sim}$80 K and I$_c$ of about 40 mA through holes. It was found that the deposition of bottom YBCO at a reduced laser repetition rate of 1Hz increased the T$_c$ of top YBCO to 79.9 K. The resistivity of 570 layer was about 10$^6$ ${\Omega}$cm at 60 K, which ensures good electrical isolation between successive YBCO layers.

• Journal of the Korean Ceramic Society
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• v.50 no.3
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• pp.231-237
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• 2013

Thermodynamic modeling of the $Ni_{0.5}Zn_{0.4}Cu_{0.1}Fe_2O_4$ complex ferrite system has been adopted as a rational approach to establish routes to better synthesis conditions for pure phase $Ni_{0.5}Zn_{0.4}Cu_{0.1}Fe_2O_4$ complex ferrite. Quantitative analysis of the different reaction equilibria involved in the precipitation of $Ni_{0.5}Zn_{0.4}Cu_{0.1}Fe_2O_4$ from aqueous solutions has been used to determine the optimum synthesis conditions. The spinel ferrites, such as magnetite and substitutes for magnetite, with the general formula $MFe_2O_4$, where M= $Fe^{2+}$, $Co^{2+}$, and $Ni^{2+}$ are prepared by coprecipitation of $Fe^{3+}$ and $M^{2+}$ ions with a stoichiometry of $M^{2+}/Fe^{3+}$= 0.5. The average particle size of the as synthesized $Ni_{0.5}Zn_{0.4}Cu_{0.1}Fe_2O_4$, measured by transmission electron microscopy (TEM), is 14.2 nm, with a standard deviation of 3.5 nm the size when calculated using X-ray diffraction (XRD) is 16 nm. When $Ni_{0.5}Zn_{0.4}Cu_{0.1}Fe_2O_4$ ferrite is annealed at elevated temperature, larger grains are formed by the necking and mass transport between the $Ni_{0.5}Zn_{0.4}Cu_{0.1}Fe_2O_4$ ferrite nanoparticles. Thus, the grain sizes of the $Ni_{0.5}Zn_{0.4}Cu_{0.1}Fe_2O_4$ gradually increase as heat treatment temperature increases. Based on the results of Thermogravimetric Analysis (TGA) and Differential Scanning Calorimeter (DSC) analysis, it is found that the hydroxyl groups on the surface of the as synthesized ferrite nanoparticles finally decompose to $Ni_{0.5}Zn_{0.4}Cu_{0.1}Fe_2O_4$ crystal with heat treatment. The results of XRD and TEM confirmed the nanoscale dimensions and spinel structure of the samples.

• Journal of Adhesion and Interface
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• v.8 no.1
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• pp.15-27
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• 2007

Polyimide (PI) surface modification was carried out by ion-beam treatment and silane-imidazole coupling agent to improve the adhesion between polyimide film and copper. Silane-imidazole coupling agent contains imidazole functional groups for the formation of a complex with copper metal through a coordination bonding and methoxy silane groups for the formation of siloxane polymers. The PI film surface was first treated by argon (Ar)/oxygen ($O_2$) ion-beam, followed by dipping it into a modified silane-imidazole coupling agent solution. The results of X-ray photoelectron spectroscopy (XPS) spectra revealed that the $Ar/O_2$ plasma treatment formed oxygen functional groups such as hydroxyl and carbonyl groups on the polyimide film surface and confirmed that the PI surface was modified by a coupling reaction with imidazole-silane coupling agent. Adhesion between copper and the treated PI film by ion-beam and coupling agent was superior to that with untreated PI film. In addition, adhesion of PI film treated by an $Ar/O_2$ plasma to copper was better than that of PI film treated by a coupling agent. The peeled-off layers from the copper-PI film joint were completely different in chemical composition each other. The layer of PI film side showed similar C1s, N1s, O1s spectra to the original Upilex-S and no Si and Cu atoms appeared. On the other hand the layer of copper side showed different C1s and N1s spectra from the original PI film and many Si and Cu atoms appeared. This indicates that the failure occurs at an interface between the imidazole-silane and PI film layers rather than within the PI layers.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.47-53
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• 2012

Bonding strength of Sn-3.0Ag-0.5Cu solder joint due to degradation characteristic of OSP surface finish was investigated, compared with SnPb finish. The thickness variation and degradation mechanism of organic solderability preservative(OSP) coating were also analyzed with the number of reflow process. To analyze the degradation degree of solder joint strength, FR-4 PCB coated with OSP and SnPb were experienced preheat treatment as a function of reflow number from 1st to 6th pass, respectively. After 2012 chip resistors were soldered with Sn-3.0Ag-0.5Cu on the pre-heated PCB, the shear strength of solder joints was measured. The thickness of OSP increased with increase of the number of reflow pass by thermal degradation during the reflow process. It was also observed that the preservation effect of OSP decreased due to OSP degradation which led Cu pad oxidation. The mean shear strength of solder joints formed on the Cu pads finished with OSP and SnPb were 58.1 N and 62.2 N, respectively, through the pre-heating of 6 times. Although OSP was degraded with reflow process, the feasibility of its application was proven.