• 제목/요약/키워드: Surface texturing gap

검색결과 6건 처리시간 0.023초

표면 텍스쳐링 크기와 밀도가 후면 전극 실리콘 태양전지에 미치는 영향 (A effect of the back contact silicon solar cell with surface texturing size and density)

  • 장왕근;장윤석;박정호
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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    • pp.112.1-112.1
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    • 2011
  • The back contact solar cell (BCSC) has several advantages compared to the conventional solar cell since it can reduce grid shadowing loss and contact resistance between the electrode and the silicon substrate. This paper presents the effect of the surface texturing of the silicon BCSC by varying the texturing depth or the texturing gap in the commercially available simulation software, ATHENA and ATLAS of the company SILVACO. The texturing depth was varied from $5{\mu}m$ to $150{\mu}m$ and the texturing gap was varied from $1{\mu}m$ to $100{\mu}m$ in the simulation. The resulting efficiency of the silicon BCSC was evaluated depending on the texturing condition. The quantum efficiency and the I-V curve of the designed silicon BCSC was also obtained for the analysis since they are closely related with the solar cell efficiency. Other parameters of the simulated silicon BCSC are as follows. The substrate was an n-type silicon, which was doped with phosphorous at $6{\times}10^{15}cm^{-3}$, and its thickness was $180{\mu}m$, a typical thickness of commercial solar cell substrate thickness. The back surface field (BSF) was $1{\times}10^{20}\;cm^{-3}$ and the doping concentration of a boron doped emitter was $8.5{\times}10^{19}\;cm^{-3}$. The pitch of the silicon BCSC was $1250{\mu}m$ and the anti-reflection coating (ARC) SiN thickness was $0.079{\mu}m$. It was assumed that the texturing was anisotropic etching of crystalline silicon, resulting in texturing angle of 54.7 degrees. The best efficiency was 25.6264% when texturing depth was $50{\mu}m$ with zero texturing gap in case of low texturing depth (< $100{\mu}m$).

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Controlling the Depth of Microchannels Formed during Rolling-based Surface Texturing

  • Bui, Quang-Thanh;Ro, Seung-Kook;Park, Jong-Kweon
    • 한국생산제조학회지
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    • 제25권6호
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    • pp.410-420
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    • 2016
  • The geometric dimension and shape of microchannels that are formed during surface texturing are widely studied for applications in flow control, and drag and friction reduction. In this research, a new method for controlling the deformation of U channels during micro-rolling-based surface texturing was developed. Since the width of the U channels is almost constant, controlling the depth is essential. A calibration procedure of initial rolling gap, and proportional-integral PI controllers and a linear interpolation have been applied simultaneously to control the depth. The PI controllers drive the position of the pre-U grooved roll as well as the rolling gap. The relationship between the channel depth and rolling gap is linearized to create a feedback signal in the depth control system. The depth of micro channels is studied on A2021 aluminum lamina surfaces. Overall, the experimental results demonstrated the feasibility of the method for controlling the depth of microchannels.

표면 텍스쳐링 깊이와 간격에 따른 후면 전극 실리콘 태양전지 효율에 미치는 영향 (A effect of the efficiency for the back contact silicon solar cell with the surface texturing depth and gap)

  • 장왕근;장윤석;박정일;박정호
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2011년도 제42회 하계학술대회
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    • pp.1380-1381
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    • 2011
  • 본 논문에서는 SILVACO 사의 ATHENA와 ATLAS를 이용하여 후면 전극 실리콘 태양전지 (back contact silicon solar cell)의 전면 텍스쳐링 (texturing) 깊이 (depth)와 텍스쳐링 간격 (gap)에 따른 태양전지 효율(efficiency)에 미치는 영향을 분석하였다. 제안한 후면 전극 실리콘 태양전지는 (100) silicon wafer(n-type, $6{\times}10^{15}\;cm^{-3}$)을 기반으로 전면부에 텍스쳐링을, 후면부에 BSF(back surface field, $1{\times}10^{20}\;cm^{-3}$)와 에미터(emitter, $8.5{\times}10^{19}\;cm^{-3}$)를 구성하고, 셀간 피치를 1250 ${\mu}m$, BSF와 에미터의 간격을 25 ${\mu}m$으로 한 구조이다. 텍스쳐링 간격이 없이 텍스쳐링 깊이를 0 ${\mu}m$에서 150 ${\mu}m$으로 증가시켜 분석한 결과, 텍스쳐링 깊이가 증가할수록 효율이 23.90%에서 25.79%로 증가하였다. 텍스쳐링 간격을 1 ${\mu}m$에서 100 ${\mu}m$으로 증가시켜 분석한 결과, 텍스쳐링 깊이와 상관없이 텍스쳐링 간격이 증가할수록 후면 전극 실리콘 태양전지의 효율이 감소하였다. 텍스쳐링 유무에 따라 후면 전극 태양전지의 외부양자효율의 차이를 보였고 텍스쳐링이 있을 때 외부양자효율이 보다 높은 값을 얻었다.

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Efficiency Improvement in InGaN-Based Solar Cells by Indium Tin Oxide Nano Dots Covered with ITO Films

  • Seo, Dong-Ju;Choi, Sang-Bae;Kang, Chang-Mo;Seo, Tae Hoon;Suh, Eun-Kyung;Lee, Dong-Seon
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.345-346
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    • 2013
  • InGaN material is being studied increasingly as a prospective material for solar cells. One of the merits for solar cell applications is that the band gap energy can be engineered from 0.7 eV for InN to 3.4 eV for GaN by varying of indium composition, which covers almost of solar spectrum from UV to IR. It is essential for better cell efficiency to improve not only the crystalline quality of the epitaxial layers but also fabrication of the solar cells. Fabrication includes transparent top electrodes and surface texturing which will improve the carrier extraction. Surface texturing is one of the most employed methods to enhance the extraction efficiency in LED fabrication and can be formed on a p-GaN surface, on an N-face of GaN, and even on an indium tin oxide (ITO) layer. Surface texturing method has also been adopted in InGaN-based solar cells and proved to enhance the efficiency. Since the texturing by direct etching of p-GaN, however, was known to induce the damage and result in degraded electrical properties, texturing has been studied widely on ITO layers. However, it is important to optimize the ITO thickness in Solar Cells applications since the reflectance is fluctuated by ITO thickness variation resulting in reduced light extraction at target wavelength. ITO texturing made by wet etching or dry etching was also revealed to increased series resistance in ITO film. In this work, we report a new way of texturing by deposition of thickness-optimized ITO films on ITO nano dots, which can further reduce the reflectance as well as electrical degradation originated from the ITO etching process.

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Light Scattering from Microscopic Structure and Its Role on Enhanced Haze Factor

  • Kang, Junyoung;Park, Hyeongsik;Yi, Junsin
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.340-340
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    • 2016
  • We have prepared alumina (Al2O3) doped zinc oxide (AZO) films by DC magnetron sputtering (MS) technique and obtained higher self surface texturing at a high target angle (f). We have characterized the films and applied it as a front electrode of a single junction amorphous silicon solar cell. At a lower f the deposited films show higher values of optical gap (Eg), charge carriers mobility & concentration, crystallite grain size and wider wavelength range of transmission. At higher target angle the sheet resistance, surface roughness, haze factor etc for the films increase. For f=72.5o the haze factor for diffused transmission becomes 6.46% at 540 nm wavelength. At f=72.5o the material shows a reduction in crystallinity and evolution of a hemispherical-type sub-micron surface textures. A Monte Carlo method (MCM) of simulation of the AZO film deposition shows that such an enhanced self-surface texturing of the films at higher f is possible.

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햅틱 인터페이스를 이용한 가상 조각 시스템 (A Virtual Sculpting System using Haptic Interface)

  • 김래현;박세형
    • 한국정보과학회논문지:시스템및이론
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    • 제31권12호
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    • pp.682-691
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    • 2004
  • 본 논문에서는 햅틱 인터페이스를 통해 실제 찰흙을 만지는 것처럼 자연스럽게 가상 모델의 일부를 덧붙이거나 제거하여 원하는 모양을 만드는 햅틱 가상 조각 시스템을 소개하고자 한다. 햅틱 렌더링과 햅틱 툴에 의한 가상 모델의 변형은 볼륨 간접 표면 법을 기반으로 이루어진다. 본 시스템에서는 기존의 불륨 데이타 기반의 햅틱 조각 시스템이 갖는 문제점들을 개선하고 빠르고 안정된 알고리즘을 제안하였다. 먼저 가상의 물체를 조각하는 동안 빠른 햅틱 응답 속도(1 KHz)에 비해 훨씬 느린 비쥬얼 프로세싱(~30 Hz)의 속도 차이로 인해 발생되는 문제를 극복하기 위해 조각과정의 연속적인 두 모델의 중간 표면들을 생성하여 부드러운 햅틱 렌더링을 구현하였다. 조각 툴에 의해 변형되는 불륨 간접 표면은 비쥬얼 디스플레이를 위해 메쉬 모델로 컨버전 되는데 이때 메쉬 모델은 표면의 복잡도를 반영하여 적은 폴리곤으로 복잡한 모양을 보여줄 수 있는 비 군일 메쉬 생성 기법을 사용하였다. 실시간 조각과정에서 가상 물체의 다양한 비쥬얼 효과를 위해 메쉬 기반의 솔리드 덱스쳐링, 페인팅, 그리고 모델의 양각/음각기법도 구현하였다.