• Bulletin of the Korean Chemical Society
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• 제22권2호
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• pp.154-158
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• 2001

The steps for the generation of very thin GaN films on ultrathin AlN/6H-SiC surface by alternating a pulsative supply (APS) of trimethyl gallium and NH3 gases have been examined by ASED-MO calculations. We postulate that the gallium cul ster was formed with the evaporation of CH4 gases via the decomposition of trimethyl gallium (TMG), dimethyl gallium (DMG), and monomethyl galluim (MMG). During the injection of NH3 gas into the reactor, the atomic hydrogens were produced from the thermal decomposition of NH3 molecule. These hydrogen gases activated the Ga-C bond cleavage. An energetically stable GaN nucleation site was formed via nitrogen incorporation into the layer of gallium cluster. The nitrogen atoms produced from the thermal degradation of NH3 were expected to incorporate into the edge of the gallium cluster since the galliums bind weakly to each other (0.19 eV). The structure was stabilized by 2.08 eV, as an adsorbed N atom incorporated into a tetrahedral site of the Ga cluster. This suggests that the adhesion of the initial layer can be reinforced by the incorporation of nitrogen atom through the formation of large grain boundary GaN crystals at the early stage of GaN film growth.

• 한국전산유체공학회지
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• 제16권2호
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• pp.88-93
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• 2011

A numerical study of subcooled onset of nucleate boiling (ONB) in a micro-channel under pulsed heating using volume of fluids (VOF) model was conducted. The VOF simulation adopting the existing experimental condition is compared to the experimental data. The time to ONB was determined when the void fraction at the microheater surface first appeared. The theoretical superheat for homogeneous nucleation relatively predicts the transient ONB results of convective flow of water well based on local temperature distribution. It was found that once heat load increases at the heater, transient flow boiling starts to occur faster.

• 천문학회보
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• 제40권1호
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• pp.74.3-74.3
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• 2015

We present 2D- photometric decompositions of ~1,200 nearby dwarf galaxies. Our representative sample is derived from 'A catalog of Visually classified galaxies in the Local Universe'(Ann, Seo and Ha APJS,,,2015) of which galaxy morphological types are determined by visual inspection of color images using the Sloan Digital Sky Survey data release 7. In this catalog, dwarf galaxies were divided into 5 subtypes : dS0, dE, dSph, dEbc, dEblue with distinction of the presence of nucleation in dE, dSph, and dS0. The dSph types are less brighter than other types, and galaxies with nuclei are slightly brighter than those with no nuclei in the same types. Sersic index n have a range 1~1.5, and $dE_{un}$ and $dSph_{un}$ galaxies have n less than 1, and $dSph_n$ galaxies have largest values. We performed two-dimensional decomposition of galaxies using GALFIT, and analyzed their structural components, and residual features which are seen in the residual image.

• 한국결정성장학회지
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• 제17권4호
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• pp.160-164
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• 2007

Carbon nanofibers were deposited on silicon oxide substrate by thermal chemical vapor deposition method. For the enhancement of the characteristics of carbon nanofibers, the source gases ($C_2H_2,\;H_2$) flows were intentionally manipulated as the cyclic on/off modulation of $C_2H_2$ flow. By the cyclic modulation process during the initial deposition stage, the formation density of carbon nanofibers on the substrate could be much more enhanced. The diameter of as-grown carbon nanofibers was also reduced by the cyclic modulation process. The cause for the variation in the characteristics of carbon nanofibers by the cyclic modulation process was discussed in association with the hydrogen gas etching ability.

• 한국연소학회:학술대회논문집
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• 한국연소학회 2014년도 제49회 KOSCO SYMPOSIUM 초록집
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• pp.133-134
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• 2014

The full transport equation approach for laminar non-premixed flame with detailed chemistry, soot and radiation has an advantage in accuracy and describing for emission pathway, but this approach requires the excessive computational cost especially for a higher-order hydrocarbon fuel flames. On the other hand, the standard flamelet model has an efficiency and accuracy for non-premixed flame, though this model is not suitable for simulating slow processor like soot and radiation in laminar non-premixed flame situation. To overcome this limitation, modified transient flamelet model is developed which coupled with two-equation soot model involved in soot formation and evolution mechanism such as nucleation, surface growth, oxidation and agglomeration.

• 한국연소학회지
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• 제15권4호
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• pp.22-28
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• 2010

The Direct Quadrature Method of Moments (DQMOM) has been presented for the solution of population balance equation in the wide range of the multi-phase flows. This method has the inherently interesting features which can be easily applied to the multi-inner variable equation. In addition, DQMOM is capable of easily coupling the gas phase with the discrete phases while it requires the relatively low computational cost. Soot inception, subsequent aggregation, surface growth and oxidation are described through a population balance model solved with the DQMOM for soot formation. This approach is also able to represent the evolution of the soot particle size distribution. The turbulence-chemistry interaction is represented by the laminar flamelet model together with the presumed PDF approach and the spherical harmonic P-1 approximation is adopted to account for the radiative heat transfer.

• ETRI Journal
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• 제19권1호
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• pp.26-35
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• 1997

The substrate effects on solid-phase crystallization of amorphous silicon (a-Si) films deposited by low-pressure chemical vapor deposition (LPCVD) using $Si_2H_6$ gas have been extensively investigated. The a-Si films were prepared on various substrates, such as thermally oxidized Si wafer ($SiO_2$/Si), quartz and LPCVD-oxide, and annealed at 600$^{\circ}C$ in an $N_2$ ambient for crystallization. The crystallization behavior was found to be strongly dependent on the substrate even though all the silicon films were deposited in amorphous phase. It was first observed that crystallization in a-Si films deposited on the $SiO_2$/Si starts from the interface between the a-Si and the substrate, so called interface-interface-induced crystallization, while random nucleation process dominates on the other substrates. The different kinetics and mechanism of solid-phase crystallization is attributed to the structural disorderness of a-Si films, which is strongly affected by the surface roughness of the substrates.

• 한국결정성장학회지
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• 제11권1호
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• pp.1-5
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• 2001

승화법에 의하여, 여러 조건의 성장압력과 성장온도에서 SiC 단결정을 성장시켰다. 성장된 단결정을 광학현미경으로 관찰하여 성장 step의 형태와 양상을 관찰하였으며, 성장 step의 morphology와 결정 성장 인자와의 상호 연관성에 대하여, 핵생성과 결정성장에 관한 BCF 이론을 적용시켜 고찰하였다.

• 한국패류학회지
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• 제27권3호
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• pp.223-228
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• 2011

To understand the role of hemocytes in the shell repair process, a hole was drilled in the right valves of the Pacific oyster, Crassostrea gigas, and the repair process was observed. Histological observations suggested that the exterior surface of the shell was repaired by aggregated hemocytes. The nuclei of the hemocytes were cleary stained in the regenerated shell while appearing fragmented after calcification at the $7^{th}$ day. Globular calcium granules were genegenerated from the hemocytic monolyer after 6 days of incubation which were morphologically and chemically identical with those from prismatic shell. Our finding suggested that the repaired prismatic shell was composed by aggregated hemocytes and that their endogenous calcium component might support the nucleation of calcium biomineralization during shell repair.

• 한국세라믹학회지
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• 제27권3호
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• pp.401-411
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• 1990

Deposition of diamond films on Si(100) from the mixtures of methane and hydrogen were investigated using hot W filament CVD method. The nucleation density could be increased thousandfold by surface treatment with SiC powder. Upon oxygen addition to the mixture, crystal facets became developed more clearly by selectively removing non-diamond carbons, but the film growth rate generally decreased. However, at a very high methane content(e.g. 10%), a small amount of oxygen addition has resulted in an increase in the film deposition rate presumably by promotion of methane decomposition. When the gas pressure was varied, the growth rate exhibited a maxiumum at around 20torr and the film crystallinity steadily improved with the pressure increase. The observed variation of the growth rate by oxygen addition was discussed in terms of its role in the pyrolysis and the subsequent gas phase reactions.