• Korean Journal of Materials Research
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• v.24 no.3
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• pp.152-158
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• 2014

We report the effect of the fabric of the surface microstructure on the CO gas sensing properties of $SnO_2$ thin films deposited on self-assembled Au nanodots ($SnO_2$/Au) that were formed on $SiO_2/Si$ substrates. We characterized structural and morphological properties, comparing them to those of $SnO_2$ thin films deposited directly onto $SiO_2/Si$ substrates. We observed a significant enhancement of CO gas sensing properties in the $SnO_2$/Au gas sensors, specifically exhibiting a high maximum response at $200^{\circ}C$ and quite a low detection limit of 1 ppm level in dry air. In particular, the response of the $SnO_2/Au$ gas sensor was found to reach the maximum value of 32.5 at $200^{\circ}C$, which is roughly 27 times higher than the response (~1.2) of the $SnO_2$ gas sensor obtained at the same operating temperature of $200^{\circ}C$. Furthermore, the $SnO_2/Au$ gas sensors displayed very fast response and recovery behaviors. The observed enhancement in the CO gas sensing properties of the $SnO_2/Au$ sensors is mainly ascribed to the formation of a nanostructured morphology in the active $SnO_2$ layer having a high specific surface-reaction area by the insertion of a nanodot form of Au nucleation layer.

• Korean Journal of Materials Research
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• v.4 no.5
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• pp.566-573
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• 1994

The diamond synthesis by combustion flame method is considerably affected by the substrate surface temperature and its distribution which are mainly controlled by the ratio of mixed gas, $O_2/C_2H_2$. In order to elucidate the role of gas ratio in the diamond synthetic process by combustion flame, under various gas ratios (R=0.87~0.98; R=ratio of flow-rate of $O_2/C_2H_2$ gas) the substrate temperature was measured by using thermal video system and the morphological change of diamond crystals was analysed by using SEM, Raman spectroscope, and X-ray diffraction method. With increasing the gas ratio, i.e., decreasing the hydrocarbon content, the nucleation rate of diamond crystal was lowerd. It was also found that the morphology of diamond crystals changed from the cubo-octahedron type consisting of (100), (111) plane to the octahedron type of (111) plane. The increase of the substrate temperature consistently resulted in the increase of the nucleation rate as well as the growth rate of diamond crystals in which the surface of diamond crystal dominantly consisting of (100) plane.

• Journal of the Korean institute of surface engineering
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• v.46 no.4
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• pp.145-152
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• 2013

The growth behavior of nanocrystalline diamond (NCD) film has been studied for three different substrates, i.e. bare Si wafer, 1 ${\mu}m$ thick W and Ti films deposited on Si wafer by DC sputter. The surface roughness values of the substrates measured by AFM were Si < W < Ti. After ultrasonic seeding treatment using nanometer sized diamond powder, surface roughness remained as Si < W < Ti. The contact angles of the substrates were Si ($56^{\circ}$) > W ($31^{\circ}$) > Ti ($0^{\circ}$). During deposition in the microwave plasma CVD system, NCD particles were formed and evolved to film. For the first 0.5h, the values of NCD particle density were measured as Si < W < Ti. Since the energy barrier for heterogeneous nucleation is proportional to the contact angle of the substrate, the initial nucleus or particle densities are believed to be Si < W < Ti. Meanwhile, the NCD growth rate up to 2 h was W > Si > Ti. In the case of W substrate, NCD particles were coalesced and evolved to the film in the short time of 0.5 h, which could be attributed to the fact that the diffusion of carbon species on W substrate was fast. The slower diffusion of carbon on Si substrate is believed to be the reason for slower film growth than on W substrate. The surface of Ti substrate was observed as a vertically aligned needle shape. The NCD particle formed on the top of a Ti needle should be coalesced with the particle on the nearby needle by carbon diffusion. In this case, the diffusion length is longer than that of Si or W substrate which shows a relatively flat surface. This results in a slow growth rate of NCD on Ti substrate. As deposition time is prolonged, NCD particles grow with carbon species attached from the plasma and coalesce with nearby particles, leaving many voids in NCD/Ti interface. The low adhesion of NCD films on Ti substrate is related to the void structure of NCD/Ti interface.

• Journal of the Korean institute of surface engineering
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• v.38 no.1
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• pp.7-13
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• 2005

Bismuth thin films were prepared on glass substrate with RF magnetron sputtering and effects of substrate temperature on surface morphology and their electrical transport properties were investigated. Grain growth of bismuth after nucleation and the onset of coalescense of grains at 393 K were observed with field emission secondary electron microscopy. Continuous thin films could not be obtained above 473 K because of grain segregation and island formation. Hall effect measurements showed that substrate heating yields the decrease of carrier density and the increase of mobility. Resistivity of bismuth film has its minimum (about 0.7 x 10/sup -3/ Ωcm) in range of 403～433 K. Annealing of bismuth films deposited at room temperature was carried out in a radiation furnace with flowing hydrogen gas. The change of resistivity was not significant due to cancellation of the decrease of carrier density and the increase of mobility. The abrupt change of electrical properties of film annealed above 523 K was found to be caused by partial oxidation of bismuth layer in x-ray diffraction analysis.

• Tribology and Lubricants
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• v.13 no.1
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• pp.42-52
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• 1997

This paper deals with wear characteristics of ion-nitrided metal theoretically and experimentally in order to analysis of wear phenomena. Wear tests show that compound layer of ion-nitrided metal reduces wear rate when the applied wear load is mall. However, as th load becomes large, the existence of compound layer tends to increase wear rate. The residual stress at the surface of ion-nitrided metal is measured, and the internal stress distribution is calculated when the normal and tangential forces are applied to the surface of metal. Compressive residual stress is largeest at the compound layer, and decreases as the depth from the surface increases. Calculation shows that the maximum stress exists at a certain depth from the surface when normal and tangential force are applied, and that the larger the wear load is the deeper the location of maximum stress becomes. In the analysis, it is found that under small applied wear load the critical depth, where voids and cracks may be created and propagated, is located at the compound layer, as the adhesive wear, where hardness is an important factor, is created the existence of compound layer reduces the amount of wear. When the load becomes large the critical depth is located below the compound layer, and delamination, which may be explained by surface deformation, crack nucleation and propagation, is created, and the existence of compound layer increases wear rate.

• Korean Journal of Materials Research
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• v.14 no.7
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• pp.505-510
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• 2004

The glass-ceramic based on LAS($Li_{2}O-Al_{2}O_3-SiO_{2}$) system was observed using SEM(Scanning Electric Microscopy) and AFM(Atomic Force Microscopy) and it was expected to get a correlation between the crystal size and the surface roughness through the result. At heat treatment conditions (the nucleation: $740\~800^{\circ}C$, the crystal growth: $900\~1150^{\circ}C$), the crystal size was increased from 72 to 450 nm so that the mean of surface roughness was also risen from 0.8 to 6.3 nm. Based on the results, the surface roughness of glass-ceramic is controlled by the factors, crystal size, crystallines, and the condition of heat treatment.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.97-97
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• 2017

This study investigated the corrosion protection by electrodeposited copper layer on AZ31 Mg alloy with and without additional silver layer by immersion test, salt spray test, OCP transient and potentiodynamic polarization experiment. The single electrodeposited Cu layer on AZ31 Mg alloy showed a nodular structure with many imperfections of crevices between the nodules, which resulted in the fast initiation of pitting corrosion within first few hours of immersion. Double-layer coating of Cu and outer Ag layer slightly increased the initiation time for pitting corrosion. Triple-layer coatings of Cu/Ag/Cu exhibited the most efficient corrosion protection of AZ31 Mg alloy, compared to the single- and double-layer coatings. Surface morphology of the outer Cu layer in the triple-layer was changed from the nodular structure to fine particle structure with no crevices due to the presence of an additional Ag layer. Thus, the improved corrosion resistance of AZ31 Mg alloy by electrodeposited Cu/Ag or Cu/Ag/Cu layers is readily ascribed to the decreased number of imperfections in the electrodeposited layers due to the additional silver layer. It is concluded that the additional silver layer provides many nucleation sites for the second Cu plating, resulting in the formation of finer and denser structure than the first Cu electrodeposit.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.11a
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• pp.12-13
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• 2012

An environmentally friendly method for in situ growth of Mg-Al hydrotalcite (HT) film on AZ31 magnesium alloy has been developed. The growth processes and corrosion resistance of the HT film were investigated. Then the HT film was surface modified by phytic acid solution to further improve the corrosion resistance. The film formation involves the dissolution of AZ31 substrate, adsorption of the ions from solution, nucleation of the precursor, followed by the dissolution of $Al^{3+}$, exchanging of $OH^-$ by $CO{_3}^{2-}$ and growth of the HT film. The HT film is very compact and acts as a barrier against $Cl^-$ attack in the early stage of corrosion, and then the surface of the film is dissolved gradually. This dense HT film can provide effective protection to the AZ31 alloy. The HT film with surface modification by phytic acid presents a self-healing feature and exhibits better corrosion resistance.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1535-1537
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• 1999

Photochemical defluorination and substitution of fluorocarbon-resin surfaces using a pulsed Nd:YAG laser(266 nm) and copper-sulfate$(CuSO_4)$ aqueous solution were discussed. Interface of copper nuclei and fluorocabon-resin was chemically bonded through oxygen which was photodissociated from water in copper-sulfate aqueous solution under the laser irradiation. The reaction mechanism for chemical surface modification is discussed on the basis of x-ray photoelectron spectroscopy and atomic force microscope analyses.

• Journal of the Korean institute of surface engineering
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• v.33 no.2
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• pp.69-76
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• 2000

The rf plasma chemical vapor deposition is a common method employed for diamond or amorphous carbon deposition. Diamond possesses the strongest bonding, as exemplified by a number of unique properties-extraordinary hardness, high thermal conductivity, and a high melting tempera tore. Therefore, it is very important to investigate the synthesis of semiconducting diamond and its use as semiconductor devices. An inductively coupled rf plasma CVD system for producing amorphous carbon films were developed. Uniform temperature and concentration profiles are requisites for the deposition of high quality large-area films. The system consists of rf matching network, deposition chamber, pumping lines for gas system. Gas mixtures with methane, and hydrogen have been used and Si (100) wafers used as a substrate. Amorphous carbon films were deposited with methane concentration of 1.5% at the process pressure of S torr~20 torr, and process temperature of about $750^{\circ}C$. The nucleation and growth of the amorphous carbon films have been characterized by several methods such as SEM and XRD.