• Journal of the Korean Ceramic Society
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• v.37 no.3
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• pp.233-239
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• 2000

Sr0.9Bi2+xTa2O9(x=0, 0.1, 0.2, 0.3) thin films on IrO2/SiO2/Si or Pt/Ti/SiO2/Si substrate were prepared by spin coating method using SBT stock solutions synthesized by MOD process. SBT thin films on IrO2 transformed to layered perovskite phase at $700^{\circ}C$, but showed low breakdown voltage due to their porous microstructure. The smaple of Sr0.9Bi2+xTa2O9 composition showed the best dielectric and electrical properties. When the sample of the same composition was annealed at 80$0^{\circ}C$, the dielectric and electric properties were improved due to the grian growth and dense surface. the remanent polarization values(2Pr) at $\pm$3 V for IrO2 and Pt electrodes were 10.5, 7.15$\mu$C/$\textrm{cm}^2$, respectively. The SBT thin film with IrO2 electrode showed the lower coercive field. The leakage current density and breakdown voltage of SBT thin films on IrO2 were higher than those on Pt.

• Journal of the Korean Ceramic Society
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• v.35 no.1
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• pp.88-96
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• 1998

The structural and electrical properties of titanium dioxide(TiO2) thin films deposited on p-type (100) si and 4$^{\circ}$off(100) Si substartes by metalorganic chemical vapor deposition (MOCVD) have been studied with post rapid thermal annealing. TiO2 thin films of anatase phase were grown at 300-500$^{\circ}C$ using titanium post rapid thermal annealing at a temperature of 800$^{\circ}C$ for 30sec. rutile phase was observed in the condition of the deposition temperature over 350$^{\circ}C$ in the ambient air atmosphere and at 500$^{\circ}C$ in cacuu,. SEM and AFM study show-ed surface roughness were increased slightly from 40${\AA}$to 55${\AA}$ after annealing due to grain growth and phase transformation. From capacitane-voltage measurement of Al/TiO2./p-Si structure after annealing we obtained ideal capacitance-voltage characteristics of MOS structure with dielectric constant of 16-22 in case of (100) Si and about 30- in case of 4$^{\circ}$off(100) Si but showed the higher leakage current.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1772-1775
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• 2000

We have fabricated poly-Si TFTs by two-step crystallizaton. Poly-Si films have been prepared by furnace annealing(FA) and rapid thermal annealing(RTA) followed by subsequent the post-annealing, excimer laser annealing. The measured crystallinity of RTA and FA annealed poly-Si film is 77% and 68.5%, respectively. For two-step annealed poly-Si film, the crystallinity has been drastically to 87.7% and 86.3%. The RMS surface roughness from AFM results have been improved from 56.3${\AA}$ to 33.5${\AA}$ after post annealing. The measured transfer characteristics of the two-step annealed poly-Si TFTs have been improved significantly for the both FA-ELA and RTA-ELA. Leakage currents of two-step annealed poly-Si TFTs are lower than that of the devices by FA and RTA. From these results, we can describe the fact that the intra-grain defects has been cured drastically by the post-annealing.

• ETRI Journal
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• v.27 no.4
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• pp.439-445
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• 2005

We introduce a strained-SiGe technology adopting different thicknesses of Si cap layers towards low power and high performance CMOS applications. By simply adopting 3 and 7 nm thick Si-cap layers in n-channel and p-channel MOSFETs, respectively, the transconductances and driving currents of both devices were enhanced by 7 to 37% and 6 to 72%. These improvements seemed responsible for the formation of a lightly doped retrograde high-electron-mobility Si surface channel in nMOSFETs and a compressively strained high-hole-mobility $Si_{0.8}Ge_{0.2}$ buried channel in pMOSFETs. In addition, the nMOSFET exhibited greatly reduced subthreshold swing values (that is, reduced standby power consumption), and the pMOSFET revealed greatly suppressed 1/f noise and gate-leakage levels. Unlike the conventional strained-Si CMOS employing a relatively thick (typically > 2 ${\mu}m$) $Si_xGe_{1-x}$ relaxed buffer layer, the strained-SiGe CMOS with a very thin (20 nm) $Si_{0.8}Ge_{0.2}$ layer in this study showed a negligible self-heating problem. Consequently, the proposed strained-SiGe CMOS design structure should be a good candidate for low power and high performance digital/analog applications.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2002.11a
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• pp.69-71
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• 2002

$(Bi, La)Ti_{3}O_{12}(BLT)$ ferroelectric thin films were prepared on $Al_{2}O_{3}/Si$ substrates by the sol-gel method. The as-coated films were post-annealed at the temperature of $650^{\circ}C$ and $700^{\circ}C$ for 30 min. The crystallinty, surface morphologies and electrical properties were affected by the annealing temperatures. The BLT films annealed at above $650^{\circ}C$ exhibited typical bismuth layered perovskite structures with (00$\ell$) preferred orientation. The granular shaped grains with a size of approximately 90nm was formed in the film sample annealed at $700^{\circ}C$. The memory window volatge of the BLT film was 2.5V. The leakage current of BLT films annealed at $650^{\circ}C$ was about $1\times10^{-7}A/\textrm{cm}^2$ at 3V.

• Publications of The Korean Astronomical Society
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• v.30 no.2
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• pp.481-483
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• 2015

Multi-dimensionality in the inner working of core-collapse supernovae has long been considered one of the most important ingredients to understand the explosion mechanism. We perform a series of numerical experiments to explore how rotation impacts the 3-dimensional hydrodynamics of core-collapse supernova. We employ a light-bulb scheme to trigger explosions and a three-species neutrino leakage scheme to treat deleptonization effects and neutrino losses from the neutron star interior. We find that the rotation can help the onset of neutrino-driven explosions for models in which the initial angular momentum is matched to that obtained from recent stellar evolutionary calculations (${\sim}0.3-3rad\;s^{-1}$ at the center). For models with larger initial angular momenta, a shock surface deforms to be oblate due to larger centrifugal force. This makes a gain region, in which matter gains energy from neutrinos, more concentrated around the equatorial plane. As a result, the preferred direction of the explosion in 3-dimensional rotating models is perpendicular to the spin axis, which is in sharp contrast to the polar explosions around the axis that are often obtained from 2-dimensional simulations.

• Transactions of the Korean hydrogen and new energy society
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• v.27 no.3
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• pp.306-310
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• 2016

In Na-base Battery for ESS, ${\alpha}-Al_2O_3$ and metal bonding was used to prevent direct reaction between electrolyte and electrode. The hard metal was metalized at $1600^{\circ}C$ in a flowing hydrogen gas for high bonding strength. In this study, instead of hard metal metalizing, Ni was plated on ${\alpha}-Al_2O_3$ by electroless Ni plating technique and then bonded with metal. To enhance the bonding strength, surface of ${\alpha}-Al_2O_3$ was treated with $H_3PO_4$. The effects of strength and leakage of joining as a function of acid treatment time on ${\alpha}-Al_2O_3$ are described.

• Electrical & Electronic Materials
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• v.10 no.1
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• pp.39-44
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• 1997

Bulk type radiation detector of Au/Cd$_{1-x}$ Zn$_{x}$Te(x=20%)/Au structure using Cd$_{1-x}$ Zn$_{x}$Te(x=20%) wafer(3x4xl mm$^{3}$) grown by high pressure Bridgman method has been developed. We etched wafer surfaces with 2% Br-methanol solution and coated gold thin film on the surfaces by electroless deposition method for 5 min. in 49/o HAuCI$_{3}$ 4H20 solution. Initial etch rates of Cd, Zn and Te were 46%, 12% and 42% respectively. After etched, the surface of wafer was slightly revealed to Te rich condition. The leakage current was increased with etch time, but it didn't exceed 3nA at 50volt. The thickness of Au film was about 100nm by Rutherford Backscattering Spectroscopy(RBS). The resolution were 6.7% for 22.1 keV photon from 109 $^{109}$ Cd and 8.2% for 59.5 keV photon from $^{241}$ Am. The radiation detector such as Au/Cd$_{1-x}$ Zn$_{x}$Te(x=20%)/Au structure was more effective to monitor the low energy gamma radiation.iation.

• Journal of the Korea Institute of Building Construction
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• v.6 no.4 s.22
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• pp.85-92
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• 2006

Urethane, epoxy, acrylic have common property to adhere on the concrete dried surface in the waterproofing materials at present. In the wet condition, however, the materials such as urethane, epoxy, acrylic need a long hardening time and it become a reason of water leakage as the materials breaking down. it is one of the problem to adhere to the substrate. Therefore, in this thesis, I focused to assure the structural safety and durability and quality for waterproofing and safe of construction cost by cut down the cost of labor and reduce the term of works as searching the application of field condition for high adhesive spray type of degenerated and rubberized asphalt membrane material.

• Journal of the Korean Society of Safety
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• v.20 no.3 s.71
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• pp.58-63
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• 2005

In this research, silicone rubber with additions of inorganic filler, alumina trihydrate$(Al(OH)_3\;:\;ATH)$, was aged acceleratedly and cyclically by the salt-fog and heating. The optimum amount of ATH addition to silicone rubber have been investigated by measurements of leakage current in the change of electrical properties and tensile strength, %elongation in mechanical properties and FT-IR, TG, SEM in the change of the chemical properties. With regard to un-aged silicone rubber, as the ATH addition amount increases, conductive path formation time was shortened in the electrical properties and tensile strength was increased, %elongation was decreased. In case of identical ATH addition amount, as cyclic aging increases, surface resistivity, tensile strength and %elongation were decreased. Considering the cyclic aging, the most effective amount of ATH addition was about 90phr.