• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.234-235
• /
• 2008

The surface flatness of heteroepitaxially grown 3C-SiC thin films is a key factor affecting electronic and mechanical device applications. This paper describes the surface flatness of poly(polycrystalline) 3C-SiC thin films according to Ar flow rates and the geometric structures of reaction tube, respectively. The poly 3C-SiC thin film was deposited by APCVD (Atmospheric pressure chemical vapor deposition) at $1200^{\circ}C$ using HMDS (Hexamethyildisilane : $Si_2(CH_3)_6)$ as single precursor, and 1~10 slm Ar as the main flow gas. According to the increase of main carrier gas, surface fringes and flatness are improved. It shows the distribution of thickness is formed uniformly.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2002년도 춘계학술대회 논문집
• /
• pp.20-23
• /
• 2002

In silicon wafer manufacturing process, the grinding process has been adopted to improve the quality of wafer such as flatness, roughness and so on. This paper describes the effect of grinding process on the surface quality of wafer. The experiments are carried out by high precision in fred grinder with air bearing spindle. The relationship between the inclination of chuck table and the flatness of wafer is investigated, and the effect of grinding conditions including wheel speed, table speed, and feed rate on damage depth and roughness of wafer is also investigated. The experimental results show that there is close relationship between the inclination of the chuck table and the flatness of wafer, and the grinding conditions within this paper little affect the flatness of wafer and relatively high affect the damage depth of wafer.

• 디지털콘텐츠학회 논문지
• /
• 제5권4호
• /
• pp.251-256
• /
• 2004

반도체 집적회로를 만드는 토대가 되는 실리콘 웨이퍼의 표면은 고품질 회로를 구성하기 위해 극도의 평탄도가 요구되므로 평탄도는 양질의 웨이퍼를 보증하는 가장 중요한 요소이다. 따라서 실리콘웨이퍼 생산의 10개의 공정 중 거칠어진 웨이퍼 표면을 고도의 평탄도를 갖도록 연마하는 폴리싱공정은 매우 중요시 되는 생산라인이다. 현재 이 공정에서는 담당 엔지니어가 웨이퍼의 모형을 측정장비의 모니터에서 육안으로 관찰하여 판단하고 평탄도를 높이기 위한 제어를 하고 있다. 그러나 사람에 의한 것이므로 많은 경험이 필요하고 일일이 체크해야하는 번거로움이 있다. 본 연구는 이러한 비효율적인 작업의 효율화를 위해 웨이퍼의 모형을 디지털 컨텐츠화하여 폴리싱 공정에 있어 평탄도를 사람이 아닌 시스템에 의해 자동으로 측정하여 제어하는 알고리즘을 제안한다. 또한 제안한 전체 웨이퍼 평탄도 추정알고리즘을 토대로 실제 현장에서 쓰이는 웨이퍼 각 사이트별 평탄도를 측정하기 위한 사이트두께 추정 알고리즘을 제안한다.

• 소성∙가공
• /
• 제14권5호
• /
• pp.477-481
• /
• 2005

Wafer scale micro mirror array with high surface quality for small form factor (SFF) optical pick-up was fabricated by micro UV-molding. To replicate micro mirror array for SFF optical pick-up, a high- precision mold was fabricated using micro-machining technology. Wafer scale micro mirror array was UV-molded using the mold and then the process was optimized experimentally. The surface flatness and roughness of UV-molded micro mirror array were measured by white light scanning interferomety system and analyzed the transcribing characteristics. Finally, the measured flatness of UV-molded micro mirror away for SFF optical pick-up, which was fabricated in the optimum processing condition, was less than 70nm.

• 정보저장시스템학회논문집
• /
• 제8권2호
• /
• pp.44-49
• /
• 2012

We measured the surface flatness of both sides for refractive media using the transmitted digital holography method. To enhance the accuracy of the result, phase-shifting system was used. With two different phase modulation of reference beam, the phase profile of object can be easily obtained. Thus, we proposed the surface measurement method which can measure large area fast, compared with conventional methods. To guarantee the reliability of obtained result, we compared with Zygo measurement system. With the proposed method, the surface flatness of $3.45{\mu}m$ resolution could be obtained.

• Applied Science and Convergence Technology
• /
• 제25권2호
• /
• pp.25-27
• /
• 2016

The surface flatness of metal meshes in a deflector of particle beam mass spectrometer (PBMS) required ideally flat, and this can specify the particle trajectories which goes through the detector. In this research, charged particle current was measured using the different surface roughness deflectors. NaCl particles were generated monodispersed in its size by using differential mobility analyzer and the whole processes were followed the way calibrating PBMS. The results indicate that the mesh surface morphology in the deflector can affect to the particle size and the concentration errors, and sensitivity of PBMS.

• 대한기계학회논문집A
• /
• 제31권8호
• /
• pp.847-854
• /
• 2007

The battery electrode of a mobile phone is made of layered polymer coated on aluminum foils and the hot rolling process is applied to increase the density per volume of an electrode for a high capacity battery. The flatness of batteries surfaces should be less than $2{\mu}m$. To satisfy the required flatness, the deformation of roll surface due to bending and heating of the roll should be minimized. Complicated hot oil paths of $100^{\circ}C$ inside the roll are required for heating the polymer layers. FEA was used to calculate thermal deformations and temperatures distributions of the roller. Based on FEA, a modified surface curvature called a crown roll was suggested and this gave the area of 30% improved flatness compared with a flat roll. The flat roll satisfied the flatness of $2{\mu}m$ in the length of 340 mm and the crown roll resulted in the longer length of 460 mm. Experiments to measure the temperature distribution and thermal strain were performed and compared with FEA. There were only 6% difference between two results.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2001년도 춘계학술대회 논문집
• /
• pp.566-569
• /
• 2001

Hot Plate is the major unit that it used to remove damp of wafer surface, to strength adhesion of photoresist(PR) and to bake coated PR in FAB process of semiconductor. It is necessary to guarantee the performance of Hot Plate(HP). Therefore, in this study designed and developed the reliability system of HP to measure and estimated thermal uniformity and flatness in temperature setting amplitude $0~250^{\circ}C$. We developed the techniques that measures and analyzes thermal uniformity using infrared thermal vision, and compensates measuring error of flatness using laser displacement sensor. For measuring flatness, we specially makes the measurement stage of 3 axes which adopts the precision encoder. The allowable error of measuring technique is less than thermal uniformity, $\pm 0.1^{\circ}C$ and flatness, $\pm 1mm$. It is expected that the developed system can measure from $\Phi$210(wafer 8") to $\Phi$356(wafer 12") and also can be used in performance test of the Cool Plate and industrial heater, etc.

• 한국실내디자인학회논문집
• /
• 제16권5호
• /
• pp.98-106
• /
• 2007

With the recent increase in the amount of interior materials, the medium-density fiberboard(MDF) has continued to be produced at an increasing rate. Accordingly, to prevent the deformation of MDF after its construction, secure the precision of its finishing and improve the performance of its design, this study attempted to investigate the effect of environment humidity conditions on flatness according to the field used in MDF and its relationship to other physical properties. An attempt was made to conduct this study by changing the conditions of surface treatment by moisture and by thickness. For this purpose, it is judged that it is desirable to prevent scheme to maintain the flatness by defining the coefficient of water absorption-induced length change as in the regulation on low-density soft fiberboard and adjusting the standard for wet bending strength upward. It is thought that is further studies will be conducted about the effect of material, adhesive and thermal pressure condition, production system and processing method used in MDF on its scheme to maintain the flatness and changes in length and thickness expansion.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
• /
• pp.126-129
• /
• 2000

This paper describes on the fabrication of a SOI substrate by SDB technology and electrochemical etch-stop. The surface of the thinned SDB SOI substrate is more uniform than that of grinding or polishing by mechanical method, and this process was found to be very accurate method for SOI thickness control. During electrochemical etch-stop, leakage current versus voltage curves were measured for analysis of the open current potential (OCP) point, the passivation potential (PP) point and anodic passivation potential. The surface roughness and the controlled thickness selectivity of the fabricated a SDB SOI substrate were evaluated by using AFM and SEM, respectively.