• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.20 no.11
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• pp.739-745
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• 2008

This paper presents the measurement of ground thermal conductivity and the characteristics of ground thermal diffusion by a ground heat exchanger(GHE). A borehole is installed to a depth of 175 m with a diameter of 150 mm. To analyze the thermal diffusion property of the GHE, thermocouples are installed under the ground near the GHE. The outdoor temperature, the ground temperature, and the water temperature of the GHE are monitored for evaluating the characteristics of ground thermal diffusion. The ground thermal conductivity is evaluated by the in-situ thermal response tester and the line source model. It is found to be 3.08 W/$m^{\circ}C$ in this study. The ground temperature is greatly dependent on the outdoor temperature from the ground surface to 2.5 m in depth and is stable below 10 m in depth. The surface temperature of the GHE varies as a function of the temperature of circulating water. But the ground temperature at 1.5 m far from the GHE is not changed in accordance with the temperature of circulating water.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.4
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• pp.183-189
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• 2012

Surface treatments and their effects on high temperature properties for the Hastelloy X, which is a promising candidate alloy for high temperature heat-transport system, have been evaluated. For TiAlN and $Al_2O_3$ overlay coatings, the two different PVD (physical vapor deposition) methods using an arc discharge and a sputtering, were applied, respectively. In addition, a different surface treatment method of the diffusion coating by a pack cementation of Al (aluminiding) was also adopted in this study. To achieve enhanced thermal oxidation resistance at $1000^{\circ}C$ by suppressing the inhomogeneous formation of thick $Cr_2O_3$ crust at the surface region, a study for the surface modification methods on the morphological and structural properties of Hastelloy X substrates has been conducted. The structural and compositional properties of each sample were characterized before and after heat-treatment at $1000^{\circ}C$ under air and He environment. The results showed that the Al diffusion coating showed the more enhanced high temperature properties than the overlay coatings such as the suppressed thick $Cr_2O_3$ crust formation and lower wear loss.

• Journal of the Korean institute of surface engineering
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• v.46 no.4
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• pp.145-152
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• 2013

The growth behavior of nanocrystalline diamond (NCD) film has been studied for three different substrates, i.e. bare Si wafer, 1 ${\mu}m$ thick W and Ti films deposited on Si wafer by DC sputter. The surface roughness values of the substrates measured by AFM were Si < W < Ti. After ultrasonic seeding treatment using nanometer sized diamond powder, surface roughness remained as Si < W < Ti. The contact angles of the substrates were Si ($56^{\circ}$) > W ($31^{\circ}$) > Ti ($0^{\circ}$). During deposition in the microwave plasma CVD system, NCD particles were formed and evolved to film. For the first 0.5h, the values of NCD particle density were measured as Si < W < Ti. Since the energy barrier for heterogeneous nucleation is proportional to the contact angle of the substrate, the initial nucleus or particle densities are believed to be Si < W < Ti. Meanwhile, the NCD growth rate up to 2 h was W > Si > Ti. In the case of W substrate, NCD particles were coalesced and evolved to the film in the short time of 0.5 h, which could be attributed to the fact that the diffusion of carbon species on W substrate was fast. The slower diffusion of carbon on Si substrate is believed to be the reason for slower film growth than on W substrate. The surface of Ti substrate was observed as a vertically aligned needle shape. The NCD particle formed on the top of a Ti needle should be coalesced with the particle on the nearby needle by carbon diffusion. In this case, the diffusion length is longer than that of Si or W substrate which shows a relatively flat surface. This results in a slow growth rate of NCD on Ti substrate. As deposition time is prolonged, NCD particles grow with carbon species attached from the plasma and coalesce with nearby particles, leaving many voids in NCD/Ti interface. The low adhesion of NCD films on Ti substrate is related to the void structure of NCD/Ti interface.

• Restorative Dentistry and Endodontics
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• v.11 no.1
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• pp.77-88
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• 1985

The purpose of this study was to examine the thermal diffusion through bases and restorations. The three principle types of base and two restorative materials were included in this study. They were representive brands of a zinc phosphate cement, a zinc oxide-eugenol cement, a calcium hydroxide paste, an amalgam and a composite resin (table 1). The specimens were prepared by placing the bases or restorative materials in laminated plastic molds. 5-mm diameter holes were prepared in the center of square of plastics which were 0.5, 1.0, 2.0, and 3.0mm thick respectively (fig. 1). All materials were manipulated in accordance with manufacturer's recommended proportions. All experimental procedures were carried out dividing them into eight different groups (table 2). Thermal diffusion was measured by means of digital thermometer (DP-100, RKC. instrument Inc. JAPAN) with the surface thermocouple placed on bottom surface of the specimen applying a constant source of heat and cold to the top surface of the each specimen. The thermal stimulus temperature applied on the each specimen surface was in the range of $60^{\circ}C$, $0^{\circ}C$ and $-50^{\circ}C$ respectively. The thermal change were recorded automatically on the multi-Pen recorder (R-16, Rikadenki, Co. JAPAN) connected with thermocouple tips which were centered on the bottom of the specimen. The following results were as follows, 1. Temperature diffusion was highest through amalgam and slowest through the composite resin. 2. As the thickness of restorations increased, the temperature change was decreased. 3. Thermal diffusion was slowest in the presence of zinc oxide-eugenol bases, followed by calcium hydroxide and zinc phosphate cement. 4. The efficiency of the cement bases in providing thermal insulation was dependent on their thickness beneath the restorations. 5. Thermal change was great in the range of $60^{\circ}C$ and $-50^{\circ}C$, but little in the range of $0^{\circ}C$.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.06a
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• pp.42-43
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• 2001

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.11a
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• pp.125-125
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• 2012

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1999.05a
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• pp.14-15
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• 1999

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2006.10a
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• pp.69-70
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• 2006

• Korean Journal of Optics and Photonics
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• v.20 no.3
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• pp.182-188
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• 2009

The surface plasmon resonance ellipsometer (SPRE), using a multiple air injection system with an extraction of air system, has been proposed and developed to minimize measurement error of signals due to diffusion of reagent into running buffer. Since the diffusion of reagent into running buffer affects the refractive index of the running buffer by changing the concentration, characteristics of binding between various bio-molecules don't appear clearly in measurement results. The diffusion between running buffer and reagent can be blocked by using an air bubble injection system. An extraction of air system is used to remove the noise signal due to unnecessary air bubbles flowing in a channel. Reliability of measurement results has been improved by using the valve system.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.05a
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• pp.702-705
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• 2011

Poly-Si wafers with resistivity of 1 [${\Omega}$-cm[ and thickness of 50 [${\mu}m$] were used as a starting material. Various efficiency influencing parameters such as rear surface recombination velocity and minority carrier diffusion length in the base region, front surface recombination velocity, junction depth and doping concentration in the Emitter layer, BSF thickness and doping concentration were investigated. Optimized cell parameters were given as rear surface recombination of 1000 [cm/sec], minority carrier diffusion length in the base region 50 [${\mu}m$], front surface recombination velocity 100 [cm/sec], sheet resistivity of emitter layer 100 [${\Omega}/{\Box}$], BSF thickness 0.5 [${\mu}m$], doping concentration $5{\times}10^{19}\;cm^{-3}$. Among the investigated variables, we learn that a diffusion length of base layer acts as a key factor to achieve conversion efficiency higher than 19.8 %. Further details of simulation parameters and their effects to cell characteristics are discussed in this paper.