• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1905-1907
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• 2001

본 논문에서는 다공질 실리콘에 대한 에탄올과 메탄을 가스 감지 특성을 측정하고 전기 전도도의 변화를 고찰하였다. 우선 HF와 에탄올의 혼합 용액내에서 n-type의 웨이퍼에 일정 전압을 인가하여 다공질 실리콘을 형성한다. 다공질 실리콘은 수직한 방향으로 $55{\sim}60{\mu}m$ 두께로 균일하게 형성되었다. 다공질 실리콘을 이용하여 소자를 제작하고 에탄올과 메탄올 가스를 주입하여 전류-전압 특성을 측정하였다. 기존의 다공질 실리콘 에탄올 센서와는 달리 turn-on 시 센서에 흐르는 전류가 빠른 시간내에 일정한 값으로 도달하였고 turn-off시에도 같은 결과를 보였다. 다공질 실리콘 표면에 흡착된 에탄올과 메탄올 가스는 전류의 흐름을 방해하는 surface charge를 스크린하여 전기 전도도를 증가시킨다. 또한 흡착된 가스가 dangling bonds를 passivation하여 전류를 증가시키는 것으로 생각된다.

• 전자공학회논문지A
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• 제29A권2호
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• pp.55-62
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• 1992

Polycrystalline silicon ingots were manufactured using the casting method for polycrystalline silicon solar cells. These ingots were cut into wafers and ten n$^{+}$p type solar cells were made through the following simple process` surface etching, n$^{+}$p junction formation, metalization and annealing. For the grain boundary passivation, the samples were oxidized in O$_2$ for 5 min. at 80$0^{\circ}C$ prior to diffusion in Ar for 100 min. at 95$0^{\circ}C$. The conversion efficiency of polycrystalline silicon solar cells made from these wafers showed about 70-80% of those of the single crystalline silicon solar cell and superior conversion efficiency, compared to those of commercial polycrystalline wafers of Wacker Chemie. The maximum conversion efficiency of our wafers was indicated about 8%(without AR coating) in spite of such a simple fabrication method.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.288-291
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• 1996

The surface properties after plasma etching of TiW solutions using the chemistries of BCl$_3$ and SF$\_$6/ gases with varying mixing ratio have been investigated using X-ray photoelectron spectroscopy. The elements of C, Cl, F, O and S are observed on the etched TiW films. After plasma etching with SF$\_$6/ gas, Ti-S bond are detected on the samples and Ti-S bond makes a role of passivation layer that surpresses Ti-O formation. After plasma etching wish BCl$_3$ gas, Ti are easily removed but W are hardly etched. As a results, W/Ti are increased on the etched sample.

• Journal of Korean Vacuum Science & Technology
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• 제3권1호
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• pp.24-29
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• 1999

The characteristic behaviors of CH3Br were examined first for the dry etching of polysilicon in a Cl2/CH3Br/O2 plasma. CH3Br is revealed one of the excellent additive gases to control anisotropy of etching profile and to give no undercutting for various typed of polysilicons. CH3Br acts as a passivation precursor on the side wall in etch cavity by forming polymer-like films such as CHxBry(x+y=1,2). The decrease of etch selectivity due to the reaction if the C-containing species from CH3Br with the surface O atoms of SiO2 was overcome by the addition of O2 into plasma, resulting that the selectivity increased by 2~3 times. According to the results of optical emission signals, CH3Br should be dissociated into several fragments to give more hydrogen atoms than bromine atoms in our helical resonator system.

• Corrosion Science and Technology
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• 제8권4호
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• pp.157-161
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• 2009

The corrosion resistance of reinforcing bar was studied to endure the marine environment during shipment. The red rust on the surface did not damage the adherence in the concrete structures, especially in highly alkaline environment, but made the consumer doubt of the quality. The passivation process by alkalization of the quenching water in the tempcore process failed to endure the long shipping period. The ceramic coating by sol-gel process improved the corrosion resistance without damaging the mechanical properties and adherence between concrete and reinfiorcing bar. Optimal concentration of the coating solution and coating temperature were tested. No additional energy was necessary for the coating process by spraying during cooling process, resulting simplified process and low cost. Salt spray test, cyclic corrosion test and atmospheric test were employed to confirm the resistance. The corrosion rates were presented by rating number and polarization resistance. The coating layer was examined by FIB, XRD and SEM etc.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.221-222
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• 2008

In Crystalline Si solar cells, Anti-Reflection Coating is contribute to improvement in energy conversion efficiency due to decrease of optical loss and recombination owing to surface passivation. Porous Si is formed electrochemical etching that uses chemical solution and anodization etching. So It gives that advantage in rapid process time and without high cost equipment. In this paper, We compare Porous Si with $SiO_2$/SiNx ARC and analyze that by anti-reflection coating.

• 한국정밀공학회지
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• 제20권8호
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• pp.213-220
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• 2003

By the localization of electro-chemical dissolution region, we succeeded in a few micrometer size hole drilling on stainless steel with the radial machining gap of about 1 ${\mu}{\textrm}{m}$. Tens of nanosecond duration voltage pulses were applied between WC micro-shaft and stainless steel in the 0.1 M $H_2SO_4$ solution. Pt balance electrode was used to drill the high aspect ratio micro-hole without generation of Cr oxide layer on the machined surface. The effects of applied voltage, pulse duration, and pulse period on localization distance were investigated according to machining time. We suggested the taper reduction technique especially brought up on blind-hole machining. High quality micro-holes with 8 ${\mu}m$ diameter with 20 ${\mu}m$ depth and 12 ${\mu}m$ diameter with 100 ${\mu}m$ depth were drilled on 304 stainless steel foil. The various hole shapes were also produced including stepped holes and taper free holes.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.362-365
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• 1999

This paper describes on thinning SDB SOI substrates by SDB technology and electrochemical etch-stop. The surface of the fabricated SDB SOI substrates is more uniform than that grinding or polishing by mechanical method, and this process is possible to accurate SOI thickness control. During Electrochemical etch-stop, leakage current versus voltage curves were measured for analysis of the open current potential (OCP) point and the passivation potential (PP) poin and determinated to anodic substrates were analyzed by using AFM and SEM, respectivelv.

• 한국정밀공학회지
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• 제26권9호
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• pp.135-142
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• 2009

In the present study replication of microstructured surfaces by microinjection molding was carried out. For a fabrication of mold inserts, nickel microstructures having various characteristic dimensions were fabricated by nickel electroforming onto Si mother microstructures. In addition, reverse nickel microstructures based on the electroformed nickel microstructures were successfully realized by electroforming with passivation process. The fabricated nickel microstructures were used as mold inserts for a replication of microstructured surfaces by microinjection molding. Microinjection molding experiment was carried out under three different processing conditions, which revealed effects of a packing stage and mold wall temperature. The microinjection-molded microstructured surfaces were characterized by using an atomic force microscope (AFM). It was found that mold wall temperature could enhance replication quality resulting in the precise microstructured surfaces.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.249-249
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• 2010

The effect of forming a passivation layer was investigated in superconformal Cu gap-filling of the nano-scale trench with atomic-layer deposited (ALD)-Ru glue layer. It was discovered that the nucleation and growth of Cu during metal-organic chemical vapor deposition (MOCVD) were affected by hydrogen plasma treatments. Specifically, as the plasma pretreatment time increased, Cu nucleation was suppressed proportionally. XPS and Thermal Desorption Spectroscopy indicated that hydrogen atoms passivate the Ru surface, which leads to suppression of Cu nucleation owing to prevention of adsorption of Cu precursor molecules. For gap-fill property, sub 60-nm ALD Ru trenches without the plasma pretreatment was blocked by overgrown Cu after the Cu deposition. With the plasma pretreatment, superconformal gap filling of the nano-scale trenches was achieved due to the suppression of Cu nucleation near the entrances of the trenches. Even the plasma pretreatment with bottom bias leads to the superconformal gap-filling.