• Corrosion Science and Technology
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• 제6권6호
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• pp.291-296
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• 2007

The corrosion of metals and alloys in flowing liquids can be classified into uniform corrosion and localized corrosion which may be categorized as follows. (1) Localized corrosion of the erosion-corrosion type: the protective oxide layer is assumed to be removed from the metal surface by shear stress or turbulence of the fluid flow. A macro-cell may be defined as a situation in which the bare surface is the macro-anode and the other surface covered with the oxide layer is the macro-cathode. (2) Localized corrosion of the differential flow-velocity corrosion type: at a location of lower fluid velocity, a thin and coarse oxide layer with poor protective qualities may be produced because of an insufficient supply of oxygen. A macro-cell may be defined as a situation in which this surface is the macro-anode and the other surface covered with a dense and stable oxide layer is the macro-cathode. (3) Localized corrosion of the active/passive-cell type: on a metal surface a macro-cell may be defined as a situation in which a part of it is in a passivation state and another in an active dissolution state. This situation may arise from differences in temperature as well as in the supply of the dissolved oxygen. Compared to uniform corrosion, localized corrosion tends to involve a higher wall thinning rate (corrosion rate) due to the macro-cell current as well as to the ratio of the surface area of the macro-anode to that of the macro-cathode, which may be rationalized using potential vs. current density diagrams. The three types of localized corrosion described above can be reproduced in a Jet-in-slit test by changing the flow direction of the test liquid and arranging environmental conditions in an appropriate manner.

• 한국분말재료학회지
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• 제13권5호
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• pp.327-335
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• 2006

In the development of new hydrogen absorbing materials for a next generation of metal hydride electrodes for rechargeable batteries, metastable Mg-Ni-based compounds find currently special attention. Amor phous-nanocrystalline $Mg_{63}Ni_{30}Y_7$ and $Mg_{50}Ni_{30}Y_{20}$ alloys were produced by mechanical alloying and melt-spinning and characterized by means of XRD, TEM and DSC. On basis of mechanically alloyed Mg-Ni-Y powders, complex hydride electrodes were fabricated and their electrochemical behaviour in 6M KOH (pH=14,8) was investigated. The electrodes made from $Mg_{63}Ni_{30}Y_7$ powders, which were prepared under use of a SPEX shaker mill, with a major fraction of nanocrystalline phase reveal a higher electrochemical activity far hydrogen reduction and a higher maximum discharge capacity (247 mAh/g) than the electrodes from alloy powder with predominantly amorphous microstructure (216 mAh/g) obtained when using a Retsch planetary ball mill at low temperatures. Those discharge capacities are higher that those fur nanocrystalline $Mg_2Ni$ electrodes. However, the cyclic stability of those alloy powder electrodes was low. Therefore, fundamental stability studies were performed on $Mg_{63}Ni_{30}Y_7$ and $Mg_{50}Ni_{30}Y_{20}$ ribbon samples in the as-quenched state and after cathodic hydrogen charging by means of anodic and cathodic polarisation measurements. Gradual oxidation and dissolution of nickel governs the anodic behaviour before a passive state is attained. A stabilizing effect of higher fractions of yttrium in the alloy on the passivation was detected. During the cathodic hydrogen charging process the alloys exhibit a change in the surface state chemistry, i.e. an enrichment of nickel-species, causing preferential oxidation and dissolution during subsequent anodization. The effect of chemical pre-treatments in 1% HF and in $10\;mg/l\;YCl_3/1%\;H_2O_2$ solution on the surface degradation processes was investigated. A HF treatment can improve their anodic passivation behavior by inhibiting a preferential nickel oxidation-dissolution at low polarisation, whereas a $YCl_3/H_2O_2$ treatment has the opposite effect. Both pre-treatment methods lead to an enhancement of cathodically induced surface degradation processes.

• 한국전기전자재료학회논문지
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• 제37권2호
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• pp.208-214
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• 2024

This reports the electrical properties of single-crystal β-gallium oxide (β-Ga₂O₃) vertical Schottky barrier diodes (SBDs) with a different guard ring structure. The vertical Schottky barrier diodes (V-SBDs) were fabricated with two types guard ring structures, one is with metal deposited on the Al₂O₃ passivation layer (film guard ring: FGR) and the other is with vias formed in the Al₂O₃ passivation layer to allow the metal to contact the Ga₂O₃ surface (metal guard ring: MGR). The forward current values of FGR and MGR V-SBD are 955 mA and 666 mA at 9 V, respectively, and the specific on-resistance (R_on,sp) is 5.9 mΩ·cm² and 29 mΩ·cm². The series resistance (R_s) in the nonlinear section extracted using Cheung's formula was 6 Ω, 4.8 Ω for FGR V-SBD, 10.7 Ω, 6.7 Ω for MGR V-SBD, respectively, and the breakdown voltage was 528 V for FGR V-SBD and 358 V for MGR V-SBD. Degradation of electrical characteristics of the MGR V-SBD can be attributed to the increased reverse leakage current caused by the guard ring structure, and it is expected that the electrical performance can be improved by preventing premature leakage current when an appropriate reverse voltage is applied to the guard ring area. On the other hand, FGR V-SBD shows overall better electrical properties than MGR V-SBD because Al₂O₃ was widely deposited on the Ga₂O₃ surface, which prevent leakage current on the Ga₂O₃ surface.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2011년도 추계학술발표대회 논문집
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• pp.154-157
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• 2011

Hydrogenated silicon nitride deposited by LF-PECVD is commonly used for anti-reflection coating and passivation in silicon solar cell fabrication. The deposition of the optimized silicon nitride on the surface is elemental in crystalline silicon solar cell. In this work, the carrier lifetimes were measured while the thicknesses of $SiN_x$ were changed from 700 ${\AA}$ to 1150 ${\AA}$ with the gas flow of $SiH_4$ as 40 sccm and $NH_3$ as 120 sccm,. The carrier lifetime enhanced as the thickness of $SiN_x$ increased due to improved passivation effect. To study the characteristics of $SiN_x$ with various gas ratios, the gas flow of $NH_3$ was changed from 40 sccm to 200 sccm with intervals of 40 sccm. The thickness of $SiN_x$ was fixed as 1000 ${\AA}$ and the gas flow of $SiH_4$ as 40 sccm. The refractive index of SiNx and the carrier lifetime were measured before and after heat treating at $650^{\circ}C$ to investigate their change by the firing process in solar cell fabrication. The index of refraction of SiNx decreased as the gas ratios increased and the longest carrier lifetime was measured with the gas ratio $NH_3/SiH_4$ of 3.

• 대한화학회지
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• 제28권5호
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• pp.271-278
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• 1984

염기성 용액에서 기계적으로 연마한 고순도 철의 전위를 환원 전위로부터 부동화 전위로 급격히 변화시켜서 부동화 막이 전극표면에 형성되게 하면서 철의 반사율 변화와 타원편광반사법(Ellipsometry) 측정을 하였다. 철 표면이 부동화 될때 일어나는 반사광의 편광 파라메터(${\Delta},\;{\psi}$)와 반사율(R) 변화를 자동화된 타원편광반사계로 기록하였고, 이로부터 철을 부동화 상태에 들어가게 하는 표면막의 두께(${\tau}$)와 광학상수(n, k)들의 변화하는 값을 계산할 수 있었다. 광학상수 값들로 나타나는 막의 성질이 시간에 따라 급격한 전이를 하는 것은 관찰되지 않았으며, 비교적 짧은 시간(수초)내에 정상 상태 값에 접근하였다. 효과적으로 부동화를 일으키는 막의 두께는 $14\;{\sim}\;23{\AA}$의 범위에 있었다. 형성된 부동화 막은 용액의 pH가 큰 경우에는 얇고 치밀한 구조를 가진 것으로 보이며, pH가 작은 경우에는 두께는 두껍지만 pH가 큰 경우보다 덜 치밀한 부동화 막이 형성되는 것으로 보였다. 이들 부동화 막은 약간의 흡광성을 가지는 것으로 나타났다.

• 한국진공학회지
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• 제21권4호
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• pp.193-198
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• 2012

플라즈마화학기상증착 장치를 이용하여 플라즈마 폴리머와 다이아몬드상 탄소(diamond-like carbon, DLC) 박막을 합성하였다. 플라즈마 폴리머 박막 위에 패시베이션 층으로 DLC 박막을 두께에 따라 합성하였고, DLC/플라즈마 폴리머 박막의 구조적, 물리적, 전기적 특성들을 고찰하였다. 기존 플라즈마 폴리머는 누설 전류 특성이 좋고 낮은 유전상수 값을 가지고 있다. 그러나 실제 반도체 공정에 적용되기 위해서는 물리적 특성도 만족되어야 하기 때문에 플라즈마 폴리머 박막 위에 DLC 패시베이션을 적용하여 플라즈마 폴리머의 물리적, 전기적 특성들을 향상시키고자 하였다. DLC 박막의 두께가 증가함에 따라 플라즈마 폴리머의 경도와 탄성계수 값은 증가하였고, root-mean-square 표면거칠기 값은 감소하고 접촉각은 증가하였다. DLC 패시베이션 되어진 플라즈마 폴리머의 경우 패시베이션이 없는 폴리머보다 유전상수 값이 증가하였지만 전기적 누설전류 특성은 향상되었다.

• 한국재료학회지
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• 제19권1호
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• pp.37-43
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• 2009

Silicon dioxide as gate dielectrics was grown at $400^{\circ}C$ on a polycrystalline Si substrate by inductively coupled plasma oxidation using a mixture of $O_2$ and $N_2O$ to improve the performance of polycrystalline Si thin film transistors. In conventional high-temperature $N_2O$ annealing, nitrogen can be supplied to the $Si/SiO_2$ interface because a NO molecule can diffuse through the oxide. However, it was found that nitrogen cannot be supplied to the Si/$SiO_2$ interface by plasma oxidation as the $N_2O$ molecule is broken in the plasma and because a dense Si-N bond is formed at the $SiO_2$ surface, preventing further diffusion of nitrogen into the oxide. Nitrogen was added to the $Si/SiO_2$ interface by the plasma oxidation of mixtures of $O_2/N_2O$ gas, leading to an enhancement of the field effect mobility of polycrystalline Si TFTs due to the reduction in the number of trap densities at the interface and at the Si grain boundaries due to nitrogen passivation.

• Current Photovoltaic Research
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• 제9권4호
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• pp.145-159
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• 2021

Light soaking (LS) stability in polymer solar cells (PSCs) has always been a challenge to achieve due to unstable photoactive layer-electrode interface. Especially, the electron transport layer (ETL) and photoactive layer interface limits the LS stability of PSCs. Herein, we have modified the most commonly used and robust zinc oxide (ZnO) ETL-interface using an organic dye molecule and a co-adsorbent. Power conversion efficiencies have been slightly improved but when these PSCs were subjected to long term LS stability chamber, equipped with heat and humidity (45℃ and 85% relative humidity), an outstanding stability in the case of ZnO/dye+co-adsorbent ETL containing devices have been achieved. The enhanced LS stability occurred due to the suppressed interfacial defects and robust contact between the ZnO and photoactive layer. Current density as well as fill factors have been retained after LS with the modified ETL as compared to un-modified ETL, owing to their higher charge collection efficiencies which originated from higher electron mobilities. Moreover, the existence of less traps (as observed from light intensity-open circuit voltage measurements and dark currents at -2V) are also found to be one of the reasons for enhanced LS stability in the current study. We conclude that the mitigation ETL-surface traps using an organic dye with a co-adsorbent is an effective and robust approach to enhance the LS stability in PSCs.

• 한국진공학회지
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• 제19권6호
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• pp.495-500
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• 2010

원자층 증착법(ALD: atomic layer deposition)을 이용하여 PES (poly (ether sulfon)) 기판위에 증착 온도, 플라즈마 파워에 따라 $Al_2O_3$와 $TiO_2$ 박막을 증착했다. 공정 조건에 따라 $Al_2O_3$와 $TiO_2$ 박막의 밀도, 탄소의 함유량이 달라지는 것을 알 수 있었으며, 공정 조건을 변화시켜 고밀도의 박막을 얻을 수 있었다. 플라즈마에 의한 PES 기판 손상을 막기 위해 buffer layer를 도입했으며, 또한 박막 내부 결함에 의한 수분 투과를 지연 또는 막기 위해 다층 구조를 증착했다. 이를 분석하기 위해 MOCON test를 이용해 투습률을 조사하였다. 플라스틱 기판에 다층 구조의 무기물 보호막을 적용했을 시 플라스틱 기판의 투습률 특성이 개선되었으며, 수분 투과에 대한 activation energy 또한 증가하는 것을 알 수 있었다.

• Current Applied Physics
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• 제18권11호
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• pp.1268-1274
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• 2018

We have investigated the effects of chemical rounding (CR) on the surface passivation and/or antireflection performance of $AlO_{x^-}$ and $AlO_x/SiN_x:H$ stack-passivated pyramid textured $p^+$-emitters with two different boron doping concentrations, and on the performance of bifacial n-PERT Si solar cells with a front pyramid textured $p^+$-emitter. From experimental results, we found that chemical rounding markedly enhances the passivation performance of $AlO_x$ layers on pyramid textured $p^+$-emitters, and the level of performance enhancement strongly depends on boron doping concentration. Meanwhile, chemical rounding increases solar-weighted reflectance ($R_{SW}$) from ~2.5 to ~3.7% for the $AlO_x/SiN_x:H$ stack-passivated pyramid textured $p^+$-emitters after 200-sec chemical rounding. Consequently, compared to non-rounded bifacial n-PERT Si cells, the short circuit current density Jsc of 200-sec-rounded bifacial n-PERT Si cells with ~60 and ${\sim}100{\Omega}/sq$ $p^+$-emitters is reduced by 0.8 and $0.6mA/cm^2$, respectively under front $p^+$-emitter side illumination. However, the loss in the short circuit current density Jsc is fully offset by the increased fill factor FF by 0.8 and 1.5% for the 200-sec-rounded cells with ~60 and ${\im}100{\Omega}/sq$ $p^+$-emitters, respectively. In particular, the cell efficiency of the 200-sec-rounded cells with a ${\sim}100{\Omega}/sq$ $p^+$-emitter is enhanced as a result, compared to that of the non-rounded cells. Based on our results, it could be expected that the cell efficiency of bifacial n-PERT Si cells would be improved without additional complicated and costly processes if chemical rounding and boron doping processes can be properly optimized.