• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.293-293
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• 2014

The applicability of graphene has been demonstrated in the electronic fields. But, high performance of graphene is limited by the contact resistance (Rc) at the metal-graphene interface. Recently, Rc was found to be improved by forming edge-contacted graphene via theoretical simulation. Based on the differences between the surface and edge contacts at the M-G interface, we demonstrate "edge-contacted" graphene through the use of a controlled plasma processing technique that generates the edge structure of the bond and significantly reduces the contact resistance. The contact resistance attained by using pre-plasma processing was of $270{\Omega}{\cdot}{\mu}m$. Mechanisms of pre-plasma process leading to low Rc was revealed by SEM and Raman spectroscopy. In the end, controlled pre-plasma processing enabled to fabricate CVD-graphene field effect transistors with an enhanced adhesion and improved carrier mobility.

• Journal of Surface Science and Engineering
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• v.48 no.3
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• pp.87-92
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• 2015

Carbon thin films were deposited on STS 316L sheets by inductively coupled plasma enhanced magnetron sputtering with or without substrate bias voltage. Typical Raman spectrum for amorphous diamond-like carbon (DLC) was obtained, and the interfacial contact resistance (ICR) was measured to show its conductive nature. The electrochemical impedance spectroscopy (EIS) was used to investigate the corrosion mechanism of the carbon coating under the polymer electrolyte membrane fuel cell (PEMFC) condition. According to the pore-corrosion mechanism, the electrolyte penetrates the carbon coating through the pores and reacts with the substrate. As the substrate corrosion proceeds, the pore enlargement occurs and the surface area of the substrate exposed to the electrolyte. Applicability of the carbon coating for the PEMFC bipolar plate was evaluated by potentiodynamic polarization experiments. Finally, an adhesion problem was briefly considered.

• Composites Research
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• v.37 no.4
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• pp.350-355
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• 2024

Boron nitride nanotubes (BNNT) are materials of significant interest in next-generation technological fields due to their outstanding physicochemical properties, including excellent chemical and thermal stability. However, for effective utilization, dispersion of BNNT is essential. Unfortunately, BNNT exhibit hydrophobic surfaces and strong van der Waals forces, making their dispersion challenging. Current dispersion methods include the addition of surfactants and surface functionalization, but these chemical treatments often damage BNNT and involve cumbersome processes. In this study, we dispersed BNNT in water under various tip ultrasonication conditions and identified conditions that do not affect BNNT using FT-IR spectroscopy, Raman spectroscopy, and X-ray diffraction analysis. Subsequently, enhanced dispersibility was confirmed through turbidity measurements, and the solubility range in 15 different solvents was evaluated using the Hansen solubility parameter.

• Journal of the Korean Vacuum Society
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• v.5 no.1
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• pp.77-84
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• 1996

Silicon deposition by Penning discharge was carried out using a mixture of 5% $SiH_4/H_2$ and Ar gas, and the effects of the deposition conditions(gas mixing raito, substrate temperature. discharge power etc.) on the growth rate, crystallinity and morphology of the films deposited were investigated. The magnetic field(800 G) confined the plasma in the region between the two cathodes and enhanced the discharge current by a factor of a few hundreds below 1 mTorr. The magnetic field-enhanced plasma density resulted in a very large deposition rate of about 300 $\AA$/min at $SiH_4$ flow rate of 0.7 sccm and the substrate temperature of $800^{\circ}C$. Characterization of the films by Raman spectroscopy, X-ray diffraction, and scanning electron microscopy revealed that an epitaxial film with a smooth surface grows above 80$0^{\circ}C$, an amorphous film below $400^{\circ}C$, and a rough polycrystalline film at intermediate temperatures.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.433-433
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• 2013

Graphene, $sp^2$-hybridized 2-Dimension carbon material, has drawn enormous attention due to its desirable performance of excellent properties. Graphene can be applied for many electronic devices such as field-effect transistors (FETs), touch screen, solar cells. Furthermore, indium tin oxide (ITO) is commercially used and sets the standard for transparent electrode. However, ITO has certain limitations, such as increasing cost due to indium scarcity, instability in acid and basic environments, high surface roughness and brittle. Due to those reasons, graphene will be a perfect substitute as a transparent electrode. We report the graphene synthesized by inductive coupled plasma enhanced chemical vapor deposition (ICP-PECVD) process on Cu substrate. The growth was carried out using low temperature at $400^{\circ}C$ rather than typical chemical vapor deposition (CVD) process at $1,000^{\circ}C$ The low-temperature process has advantage of low cost and also low melting point materials will be available to synthesize graphene as substrate, but the drawback is low quality. To improve the quality, the factor affect the quality of graphene was be investigated by changing the plasma power, the flow rate of precursors, the scenario of precursors. Then, graphene film's quality was investigated with Raman spectroscopy and sheet resistance and optical emission spectroscopy.

• Proceedings of the KSME Conference
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• 2007.05b
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• pp.2154-2159
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• 2007

The potential of using a double-faced wall stagnation flow burner in mass production of carbon nanotubes was evaluated experimentally and computationally. With nitrogen-diluted premixed ethylene-air flames established on the Nickel-coated stainless steel double-faced wall, the propensities of carbon nanotube formation were experimentally determined using SEM and FE-TEM images and Raman spectroscopy, while the flame structure was computationally predicted using a 3-dimensional CFD code with a reduced reaction mechanism. The uniformity and yields of synthesized carbon nanotubes were evaluated in terms of the flame stretch rates. Results show substantial increase of area on the wall surface where uniform carbon nanotubes are synthesized with using the double-faced wall stagnation flow burner due to enhanced uniformity of temperature distribution along the wall surface and support the potential of using a double-faced wall stagnation flow burner in mass production of carbon nanotubes.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.305-305
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• 2015

알루미늄 방열판 위에 MPCVD(Microwave Plasma Enhanced Chemical Vapor Deposition) 장치를 이용하여 DC 바이어스 전압을 기판에 인가하면서 $Ar+CH_4$ 가스 분위기에서 증착한 나노결정질 다이아몬드(Nanocrystalline Diamond; NCD) 박막의 방열 특성을 평가하였다. XRD와 Raman spectroscopy를 이용하여 증착된 박막이 NCD인지를 확인하였으며 FE-SEM 및 FIB로 박막의 표면 및 단면의 형상을 관찰하였다. 다이아몬드가 증착된 방열판에 LED를 부착하여 발열시키고 열유동측정기의 하나인 T3-ster를 사용하여 방열 특성을 분석하였다. 기존 알루미늄(Al) 기판(5.55 K/W)보다 다이아몬드 증착(Dia-Al) 기판(3.88 K/W)의 열저항 값이 현저히 작았다, 또한 LED 접합온도는 Dia-Al 기판이 Al 기판보다 약 $3.5^{\circ}C$만큼 낮았다. 적외선 열화상 카메라로 발열 중인 시편의 전면과 후면을 촬영한 결과, LED가 부착된 전면부에서는 최고 발열 부위(hot spot)의 면적이 Al 기판의 경우가 Dia-Al 기판보다 높았고, 후면부에서는 그 반대의 경향을 보였다. 이들 데이터로부터 다이아몬드 증착 방열판이 기존의 방열판보다 방열특성이 우수한 것으로 해석할 수 있으며, 다이아몬드 박막을 방열판으로 사용하면 LED의 사용 수명과 효율이 높아질 것으로 기대된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.519-523
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• 2000

Using plasma-enhanced chemical vapor deposition (PECVD), carbon thin film as electron field emitter were fabricated. These carbon thin film were deposited on Si(100) substrate at several RF power. These film were estimated by raman spectroscopy, scanning electron microscopy, and field emission. The field electron emission property of these carbon thin film was estimated by a diode technique. As the result, we observed that the field emission properties of these films were promoted by higher RF power. These results are explained as change of surface morphology and structural properties of carbon thin film

• Journal of the Korean Chemical Society
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• v.47 no.5
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• pp.439-446
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• 2003

Surface-enhanced Raman(SER) spectroscopy was utilized to investigate the adorption orientation of the 4-biphenylcarboxylic acid(BPCA) derivatives, such as 4'-cyano-BPCA(c-BPCA), 4'-mercapto-BPCA(m-BPCA), and 4'-amino-BPCA(a-BPCA), which were adsorbed on Au and Ag colloid monolayers. For the systematic approach, information regarding the adsorption behavior of benzoic acid, biphenyl, and BPCA was applied to the target molecules. From the spectral behaviors of benzene ring, C-H stretching, carboxylate anion, and the other finger printing vibrational modes, it was concluded that only the m-BPCA was adsorbed tilt with thiol group being adsorbed on Au surface, whereas the other molecules were adsorbed flat on both Au and Ag surfaces.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.8
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• pp.701-706
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• 2006

In addition to its similarity to genuine diamond film, diamond-like carbon (DLC) film has many advantages, including its wide band gap and variable refractive index. In this study, DLC films were prepared by the RF PECVD (Plasma Enhanced Chemical Vapor Deposition) method on silicon substrates using methane $(CH_4)$ and hydrogen $(H_2)$ gas. We examined the effects of the post annealing temperature on the structural variation of the DLC films. The films were annealed at temperatures ranging from 300 to $900^{\circ}C$ in steps of $200^{\circ}C$ using RTA equipment in nitrogen ambient. The thickness of the film and interface between film and substrate were observed by surface profiler, field emission scanning electron microscopy (FESEM), high resolution transmission electron microscopy (HRTEM), respectively. Raman and X-ray photoelectron spectroscopy (XPS) analysis showed that DLC films were graphitized ($I_D/I_G$, G-peak position and $sp^2/sp^3$ increased) ratio at higher annealing temperature. The variation of surface as a function of annealing treatment was verified by a AFM and contact angle method.