• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.7-14
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• 1998

Details are given of an study of the characteristics of field-induced electron emission from hydrogen-free high $sp^3$ content(>90%) amorphous diamond (a-D) film deposited on heavily doped ($\rho$<0.01 $\Omega\cdot\textrm{cm}$) n-type monocrystalline Si(111) substrate. It is demonstrated that a-D film has excellent electron field emission properties. Emission current can reach 0.9 $\mu$A at applied field as low as 1 V/$\mu\textrm{m}$, and emission current density can be obtained about several mA/$\textrm{cm}^2$. The emission current is stable when the beginning current is at 50 $\mu$A within 72 hours. Uniform fluorescence display of electron emission from whole face of the a-D film under the electric field of 10~20 V/$\mu\textrm{m}$ was also observed. It can be considered that the contribution of excellent electron emission property results from its smooth, uniform, amorphous surface and high $sp^3$ content of the a-D films.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.1
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• pp.34-41
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• 2001

Semiconductors performing digital clocking are a main source of radiated emission noise. Therefore, the most secure method of reducing emission noise is to reduce emission radiated from semiconductors; an application of an absorber to the surface of semiconductors is one of these methods, too. However, in reality, it is difficult to achieve as much effect of noise reduction as expected by using only absorber. It is confirmed by experiment in this paper that a loop area within chip has no correlation with radiated emission noise and it is clarified why the existing absorber fails to achieve a satisfactory effect of emission noise reduction. Besides, a new type of chip coating absorber has been developed which can cover up to semiconductor out lead by using ferrite coating material of ferrite/epoxy acrylate substance using only permeability loss out of electromagnetic wave reduction characteristics of materials. As a result of evaluating radiated emission noise by applying this coating absorber to semiconductor device, it could be confirmed that emission noise decreased from about 3 ㏈ up to 20㏈ depending on frequency.

• New & Renewable Energy
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• v.16 no.3
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• pp.27-34
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• 2020

This study involved a total budget analysis on the greenhouse gas (GHGs) emissions of landfills, focusing on surface emissions and the effect on emissions reductions of generating landfill gas (LFG) electricity from March 7, 2007 to December 31, 2018. The GHGs reduction effect from the electricity generation using 536.6 × 10³ tCO₂ of CH₄ was only 5.8% of the GHGs from surface emissions of 9,191 × 10³ tCO₂. In the total budget, the collection ratio should be over 95% if the reduction effect is greater than the surface emissions. The correlation coefficient for the relationship between the LFG collection ratio and GHGs reduction was -0.89. An additional effect of lowering CH₄ content may occur if the surface emitting flux of LFG decreased with an increase in the collection ratio. The unit reduction effect of GHGs by suppressing surface emissions was 4174 tCO₂/TJ. This was far greater than that of LFG power generated (54.3 tCO₂/TJ), demonstrating that surface emission control is the most important measure by which to mitigate GHGs emission.

• Journal of the Korean institute of surface engineering
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• v.50 no.3
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• pp.206-211
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• 2017

$BiNbO_4:RE^{3+}$ (RE = Dy, Eu, Sm, Tb) phosphors were prepared by solid-state reaction at $1100^{\circ}C$ and their structural, photoluminescent, and morphological properties were investigated. XRD patterns exhibited that all the synthesized phosphors exhibited a triclinic system with a dominant (210) diffraction peak, irrespective of the type of activator ions. The surface morphologies of rare-earth-ion-doped $BiNbO_4$ phosphors were found to depend strongly on the type of activator ions. The $Eu^{3+}$ and $Dy^{3+}$ doped $BiNbO_4$ phosphors revealed a strong red (613 nm) emission resulting from the $^5D_0{\rightarrow}^7F_2$ transition of $Eu^{3+}$ and a dominant yellow (575 nm) emission originating from the $^4F_{9/2}{\rightarrow}^6H_{13/2}$ transition of $Dy^{3+}$ respectively, which were the electric dipole transitions, indicating that the activator ions occupy sites of non-inversion symmetry in the $BiNbO_4$ phosphor. The main reddish-orange emission spectra of $Sm^{3+}$-doped $BiNbO_4$ phosphors were due to the $^4G_{5/2}{\rightarrow}^6H_{7/2}$ (607 nm) magnetic dipole transition, indicating that the $Sm^{3+}$ ions were located at inversion symmetry sites in the $BiNbO_4$ host lattice. As for $Tb^{3+}$-doped phosphors, green emission was obtained under excitation at 353 nm and its CIE chromaticity coordinates were (0.274, 0.376). These results suggest that multicolor emission can be achieved by changing the type of activator ions incorporated into the $BiNbO_4$ host crystal.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.25.2-25.2
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• 2009

Vertically aligned zinc oxide(ZnO) nanorods (NRs) with different surface morphology were grown by metal organic chemical vapor deposition (MOCVD) on sapphire substrate with different deposition condition. Based on the surface morphology, ZnO nanostructures are divided into three types: nanoneedles, nanonails and nanorods with rounded tip. Variable temperature photoluminescence (PL) have employed to probe the exciton recombination in high density and vertically aligned ZnO Nanorod arrays. Low temperature photoluminescence measurements do not show any significant yellow emission, but the near band edge excitonic emission shows very strong dependence with the surface morphology. The recombination properties are expected to be different due to different surface-to-volume ratio and distribution of potential fluctuations of intrinsic defects.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.8 no.1
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• pp.52-59
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• 1999

An experimental study on the grinding temperature, surface roughness and Acoustic Emission(AE) signals was conducted with different shapes of wheel. The grinding characteristics for slotted shapes of wheel changed by width and helical angle, were compared with those by general one. Lower grinding temperature was obtained for 30$^{\circ}$helical angle with 10mm width and Root Mean square(RMS) values of AE signals were lower for slotted shapes rather than general one. Surface roughness characteristics of slotted shapes found to be rough but the value of roughness for 45$^{\circ}$helical angel with 6mm width, represented to similar tendency general one.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1991.04a
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• pp.127-133
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• 1991

Acoustic microscopy has attracted much intrest recently as potential mondestructive evalution technique for detecting and sizing defects of surface and sub-surface. Also acoustic emission testing method has been developed for detecting microcracks which is more than 30 umm in length quintitatively on ceramics material. In the present paper, acoustic emission during the four point bending test in hot-pressed sintered Si$\_$3/N$\_$4/ specimen which was stressed bythermal shock has been measured by high sensitive sensing system. The surface and sub-surface cracks were detected by scanning acoustic microscope of 800 MHz and conventional ultrasonic testing in C-scope image. The purpose was to investigate the location and size of cracks by SAM and AE technique, whose experimental datas demontrates good agreement for detecting microcracks.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.10 s.175
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• pp.90-98
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• 2005

A monitoring system is necessary to make the polishing process more reliable in order to ensure the high quality and performance of the final products. Generally, AE (Acoustic Emission) is known to be closely related to the material removal rate (MRR). As the surface becomes rougher, the MRR and AE increase. Therefore, the surface roughness can be indirectly estimated using the AE signal measured during the polishing. In this study, an AE sensor-based monitoring system was fabricated to detect the very small AE signal resulting from the friction between a tool and a workpiece during polishing. The performance of this monitoring system was estimated according to polishing conditions, the relation between the level of the AE RMS and the surface roughness during the polishing was investigated.

• Journal of the Korean institute of surface engineering
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• v.37 no.3
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• pp.169-174
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• 2004

MgO thin films were reactively deposited using an internal inductively coupled plasma assisted sputtering method varying reactive gas ratio to get stoichiometric film composition, and bipolar dc substrate bias to suppress micro arcs. The minimum frequency required for arc suppression was about 10KHz depending on ICP power. Their crystallinity was analyzed using X-ray diffraction and surface morphology using AFM. The surface was very smooth with rms roughness less than 0.42nm. The preferred orientation of the films were changing from (200) to bulk-like characteristics as Ar: $O_2$ratio was controlled to 10 : 2. Optical emission spectroscopy revealed that there were two distinct discharge modes: a blue one and a green one, where enhanced emission from Ar and Mg were observed. This cannot simply be understood by metallic or oxide mode of reactive sputtering due to ICP coupled to magnetron discharge.

• Journal of Ocean Engineering and Technology
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• v.11 no.3
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• pp.29-38
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• 1997

Crack penetration behavior by fatigue crack propagation and measurements of AE before-and-after crack penetration were examined using SS41 steel plate. Experimental crack shape of SU type was in good agreement with calculated shape rather than S type. Crack propagation behavior on the front surface appears not to change markedly after penetration. However, crack growth on the back surface appears to accelerate as reported by author. As a crack propagates, AE occurred heavily just before penetration. Then, it decreases and crack is penetrating. A transition from plane strain to plane stress was observed by fractographic study. At this time, separation of fracture surface was shown which affects AE occurrence.