• 한국자기학회:학술대회 개요집
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• 한국자기학회 2003년도 somma/kms meeting
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• pp.134-134
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• 2003

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제37회 하계학술대회 초록집
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• pp.141-141
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• 2009

• 한국재료학회:학술대회논문집
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• 한국재료학회 1994년도 춘계 학술발표 강연 및 논문 개요집
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• pp.94-94
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• 1994

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2008년도 Asian Magnetics Conference
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• pp.69.1-69.1
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• 2008

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2008년도 Asian Magnetics Conference
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• pp.73.2-73.2
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• 2008

• 한국진공학회지
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• 제6권S1호
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• pp.34-42
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• 1997

Hg-Te-CdTe superlattices have received much interests over the last several years as a potential material for its applications for detecting devices and optoelectronics. We have grown the HgTe-CdTe superlattice using MBE. in our lab. We have carried out DCRC spectroscopy after growth of HgTe-CdTe superlattice with varying the superlattice periods and controlling the barrier thickness and we have that the presence of the main peak and the satellite peaks. We obtained 20 arcsec of FWHM over 100 periods of superlattice. We also note that high peak intensity shows the high quality of the sample and each layer of superlattice has abrupt interfaces. The angular separation between the main peak(m=0) and the first satellite peak(m=$\pm$1) is increased when the barrier layer thickness in superlatice layers are decreased. The separation between the first setellite peak(m=$\pm$1) and the second satellite peak(m$\pm$2) is increased similarly. The number of the satellite peak is a qualitative measure of the interfacial abruptness of the superlattice.

• ETRI Journal
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• 제21권4호
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• pp.65-82
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• 1999

We present a calculation model for an improved quantitative theoretical analysis of electronic and optical properties of strained-piezoelectric[111] InGaAs/GaAs superlattices (SLs). The model includes a full band-coupling between the four important energy bands: conduction, heavy, light, and spin split-off valence bands. The interactions between these and higher lying bands are treated by the k ${\cdot}$ p perturbation method. The model takes into account the differences in the band and strain parameters of constituent materials of the heterostructures by transforming it into an SL potential in the larger band-gap material region. It self-consistently solves an $8{\times}8$ effective-mass $Schr{\ddot{o}}dinger$ equation and the Hartree and exchange-correlation potential equations through the variational procedure proposed recently by the present first author and applied to calculate optical matrix elements and spontaneous emission rates. The model can be used to further elucidate the recent theoretical results and experimental observations of interesting properties of this type of quantum well and SL structures, including screening of piezoelectric field and its resultant optical nonlinearities for use in optoelectronic devices.

• ETRI Journal
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• 제18권4호
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• pp.315-338
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• 1997

We extend our previous theoretical analysis of electronic and optical properties of p-type quantum well structures based on the two heavy- and light-hole system to include all the three valence bands. These theories are then used to clarify the origin of the normal incidence absorption and photo current at photon wavelengths of 2 - 3 ${\mu}m$, which was observed in addition to the absorption around 8 ${\mu}m$ by a recent experimental investigation with heavily doped p-type GaAs/AlGaAs multi-quantum well (MQW) structures. In the theoretical analysis, the Hartree and exchange-correlation many-body interactions are taken into account within one-particle local density approximation, and it is shown that normal incidence absorption occurs in two wavelength regions over the transition energy range higher than barrier height for p-type GaAs/AlGaAs superlattices with well doping of $2{\times}10^{19}\;cm^{-3}$; one region has broad absorption peaks with coefficients of about 5000 $cm^{-1}$ around 8 ${\mu}m$, and the other has two rather sharp peaks at 2.7 ${\mu}m$ and 3.4 ${\mu}m$ with 1800 $cm^{-1}$ and 1300 $cm^{-1}$, respectively. The result indicates that the theory explains the experimental observation well, as the theoretical and experimental results are in close agreement in general absorption features.

• Applied Science and Convergence Technology
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• 제24권6호
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• pp.254-256
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• 2015

Effect of growth temperature ($T_g$) on the structural and optical properties of $In_{0.5}Ga_{0.5}As$ atomic layer epitaxial (ALE) quantum dots (QDs) is investigated in the range of $T_g=480-510^{\circ}C$. $In_{0.5}Ga_{0.5}As$ ALE QDs consist of 5 periods of short-period superlattices (SPSs) of 1 monolayer-thick InAs and GaAs. Number of coalescent QDs decreases as $T_g$ increases, and they disappear at $T_g=510^{\circ}C$. As $T_g$ increases in the range of $480-495^{\circ}C$, sizes of QDs increase, and densities of QDs decrease due to merge of QDs. On the contrary, although sizes of QDs are maintained at $T_g=495-510^{\circ}C$, densities of QDs decrease. This is attributed to the desorption of material-mainly indium-during the growth interruption. This conjecture is supported by the optical properties of the QDs as a function of $T_g$. As a result, we propose that optimum growth temperature of the QD is $495^{\circ}C$ with less repetition of SPSs than 5.

• Applied Microscopy
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• 제27권3호
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• pp.235-241
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• 1997

(001) GaAs 기판 위에 성장된 (ZnSe/FeSe) 초격자의 구성층 사이에 상호확산으로 형성된 $Zn_{1-x}Fe_xSe$ 의 미세구조가 고분해능 투과전자현미경과 컴퓨터 이미지 시뮬레이션에 의해 연구되었다. 컴퓨터 이미지 시뮬레이션은 multislice 방법으로 여러 시편 두께와 초점 거리에서 실시되었다. 컴퓨터 시뮬레이션에 의해 얻은 이미지는 실험에 의해 얻은 이미지와 비교되었다. 또한, CuAu-I 형태 규칙화가 $Zn_{1-x}Fe_xSe$ 상호화산층에서 일어났다. 이 CuAu-I 형태 규칙격자는 <100>과 <110> 방향에 따라서 ZnSe와 FeSe 층이 교대로 구성되어 있다.