• 제목/요약/키워드: Super-ROM

검색결과 9건 처리시간 0.023초

유한요소법을 이용한 Super-ROM 디스크 구조의 열 분포 해석 (Simulations of time dependent temperature distributions of Super-ROM disk structure using finite element method)

  • 안덕원;유천열
    • 정보저장시스템학회논문집
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    • 제1권2호
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    • pp.132-136
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    • 2005
  • It is widely accepted that the reading mechanism of Super-RENS(super-resolution near field structure) and Super-ROM(super-resolution read only memory) is closely related with non-linear temperature dependent material properties such as refractive indices, phase change. Furthermore, the dynamic change of the temperature distribution also an essential part of reading mechanism of Super-RENS/ROM. Therefore, the knowledge of the temperature distribution as a function a time is one of the important keys to reveal the physics of reading mechanism in Super-RENS/ROM. We calculated time-dependent temperature distribution in a 3-dimensional Super-ROM disk structure when moving laser beam is irradiated. With a help of commercial software FEMLAB which employed finite element method, we simulated the temperature distribution of ROM structure whose pit diameter is 120-nm with 50-nm depth. Energy absorption by moving laser irradiation, time variations of heat transfer processes, heat fluxes, heat transfer ratios, and temperature distributions of the complicate 3-dimensional ROM structure have been obtained.

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Super-ROM/RENS 디스크 구조의 재생신호 해석을 위한 유한차분 시간구역 (FDTD) 방법을 이용한 시뮬레이터 개발 (Developing a simulator for Super-RENS/ROM disk using finite difference time domain method)

  • 안덕원;유천열
    • 정보저장시스템학회:학술대회논문집
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    • 정보저장시스템학회 2005년도 추계학술대회 논문집
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    • pp.32-37
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    • 2005
  • We developed a numerical simulator in order to study the Super-RENS/ROM (Super REsolution Near-Field Structure, Read Only Memory) using 3-dimensional FDTD (finite difference time domain) method. The simulation can be performed by three steps. In the first step, we utilized the vector-diffraction theory to calculate the characteristics of incident laser beam from the object-lens to the surface of the disk. At the second step, we fed the calculated result as an input for the main FDTD simulations on the optical layers in the disk structure. After performed the FDTD simulations, we took near-to-far field transformation for the reflected signal, from the surface of the disk to the detector. Finally, we can get reflected signal at the photo-diode. Using this developed simulator, we were able to study about the reading signal from various disk structures as a function of a laser beam position. We calculated reading signals for various pit sizes for Super-ROM structure, and it is found that the simple optical diffraction theory can not explain the reading mechanism of Super-ROM, and more complicated temperature dependent physics must be involved.

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Super-ROM/RENS 디스크 구조의 재생신호 해석을 위한 유한차분시간구역 (FDTD) 방법을 이용한 시뮬레이터 개발 (Developing a simulator for Super-RENS/ROM disk using finite difference time domain method)

  • 안덕원;유천열
    • 정보저장시스템학회논문집
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    • 제2권2호
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    • pp.138-143
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    • 2006
  • We developed a numerical simulator in order to study the Super-RENS/ROM (Super REsolution Near-Field Structure, Read Only Memory) using 3-dimensional FDTD (finite difference time domain) method. The simulation can be performed by three steps. In the first step, we utilized the vector-diffraction theory to calculate the characteristics of incident laser beam from the object-lens to the surface of the disk. At the second step, we fed the calculated result as an input for the main FDTD simulations on the optical layers in the disk structure. After performed the FDTD simulations, we took near-to-far field transformation for the reflected signal, from the surface of the disk to the detector. Finally, we can get reflected signal at the photo-diode. Using this developed simulator, we were able to study about the reading signal from various disk structures as a function of a laser beam position. We calculated reading signals for various pit sizes for Super-ROM structure, and it is found that the simple optical diffraction theory can not explain the reading mechanism of Super-ROM, and more complicated temperature dependent physics must be involved.

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Super-RENS Disc의 Random 신호 특성 (Random Signal Characteristics of Super-RENS Disc)

  • 배재철;김주호;김현기;황인오;박창민;박현수;정문일;노명도
    • 정보저장시스템학회:학술대회논문집
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    • 정보저장시스템학회 2005년도 추계학술대회 논문집
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    • pp.119-123
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    • 2005
  • We report the random pattern characteristics of the super resolution near field structure(Super-RENS) write once read-many(WORM) disc at a blue laser optical system(laser wavelength 405nm, numerical aperture 0.85) and the Super-RENS read only memory(ROM) disc at a blue laser optical system(laser wavelength 659nm, numerical aperture 0.65). We used the WORM disc of which carrier-to-noise ratio (CNR) of 75nm is 47dB and ROM disc of which carrier-to-noise ratio (CNR) of 173nm is 45dB. We controlled the equalization (EQ) characteristics and used advanced partial-response maximum likelihood (PRML) technique. We obtained bit error rate (bER) of 10-3 level at 50GB WORM disc and bite error rate of 10-4 level at 50GB level ROM disc. This result shows high feasibility of Super-RENS technology for practical use.

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Super-RENS Disc의 Random 신호 특성 (Random Signal Characteristics of Super-RENS Disc)

  • 배재철;김주호;김현기;황인오;박창민;박현수;정문일;노명도
    • 정보저장시스템학회논문집
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    • 제2권1호
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    • pp.38-42
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    • 2006
  • We report the random pattern characteristics of the super resolution near field structure(Super-RENS) write once read-many(WORM) disc at a blue laser optical system(laser wavelength 405nm, numerical aperture 0.85) and the Super-RENS read only memory(ROM) disc at a blue laser optical system(laser wavelength 659nm, numerical aperture 0.65). We used the WORM disc of which carrier-to-noise ratio(CNR) of 75nm is 47dB and ROM disc of which carrier-to-noise ratio(CNR) of 173nm is 45dB. We controlled the equalization(EQ) characteristics and used advanced partial-response maximum likelihood(PRML) technique. We obtained bit error rate(bER) of 10-3 level at 50GB WORM disc and bite error rate of 10-4 level at 50GB level ROM disc. This result shows high feasibility of Super-RENS technology for practical use.

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근접장 광 기록 재생 시스템에서의 초해상 재생 현상 확인 (Super Resolution Readout in Near Field Optical Data Storage System)

  • 이진경;정안식;신종현;김주호;이경근;김중곤;박노철;박영필
    • 정보저장시스템학회논문집
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    • 제4권1호
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    • pp.1-5
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    • 2008
  • Super-resolution near-field structure (super-RENS) technology and solid immersion lens (SIL) based near-field (NF) technology have been expected as promising approaches to increase data capacity or areal density of optical disc. Super-RENS technology has been studied until now using mainly numerical aperture (NA) of 0.85 far-field optical system and possibility of tangential data density increment have been presented. NF technology has been studied with NA over 1 and presented demonstration of removable performance. To achieve much higher density, approach to increase NA of super-RENS by NF technology (Near-Field Super-Resolution, NFSR) can be a candidate and we think this technology would be advantageous compared to wavelength reduction or much higher NA increment of NF technology or much smaller effective optical spot size reduction of far-field super-resolution technology. In this paper we present readout result of ROM media having monotone pits using NF optical system with wavelength of 405nm and NA of 1.84 surface type SIL. GeSbTe material was used for super resolution active layer and pit length is 37.5nm which is shorter than resolution limit 55nm. We present the feasibility of NFSR technology by confirming the CNR threshold according to readout power (Pr) and CNR 33dB over threshold Pr.

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Super-RENS 재생 신호 계산 (Super-RENS Readout Signal Simulation)

  • 이진경;황인오;김현기;배재철;김주호
    • 정보저장시스템학회논문집
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    • 제3권1호
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    • pp.34-39
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    • 2007
  • Super-REsolution Near-field Structure (Super-RENS) 재생 현상을 모델링하고 재생 신호를 계산하여 실험 결과와 비교하였다. 약 2mW 내외의 높은 광 파워로 집광된 Spot 은 디스크 내의 상변화 물질인 GST 를 용융시키므로 집광 Spot 내에는 용융 영역과 비 용융 영역이 공존하게 되고 연속적 또는 불연속적인 경계를 이루게 된다. 이러한 열 효과로부터 기인하는 집광 Spot 내에서의 물질의 광학적 특성 변화와 변화 정도의 차이를 가정하였고 변화된 광학적 특성은 집광된 Spot 의 유효 크기를 줄어들게 함으로써 회절한계 이하의 정보를 재생 가능하게 한다. 계산은 FDTD 방법과 Scalar 방법을 병행하였다. FDTD 방법으로는 위와 같은 집광 Spot 내의 물질 굴절률 (n,k) 변화로부터 회절한계 이하의 정보가 재생 가능함과 CNR 문턱 현상을 확인하였고, Scalar 방법으로는 물질 굴절률을 직접 다루지 않고 굴절률 변화로부터 기인하는 광의 Amplitude 와 Phase 변화로부터 회절한계 이하의 정보가 재생 가능함을 확인하였다. 이 때 광의 Amplitude 와 Phase 변화를 모델링하기 위하여 지름, 위치, 반사율 변화량, 위상 변화량의 네가지 변수로 정의되는 광 마스크를 도입하였다. Scalar 방법을 이용하여 재생 RF 신호 등 다양한 Super-RENS 디스크의 신호를 계산 활용 할 수 있고 다음의 두가지 광학계에 대하여 계산과 실험으로 얻은 채널 특성 및 RF 신호를 비교하여 각각 오차평균 4.2%, 4.7%로 일치함을 확인하였다. 파장 659nm, NA=0.6, Min Pit Length=173nm ROM 디스크 System, 파장 405nm, NA=0.85 Min Mark Length=75nm WORM 디스크 System.

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디지털 도서관(圖書館)과 정보관리 (Digital Library and Information Management)

  • 김순자
    • 정보관리연구
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    • 제26권1호
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    • pp.16-51
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    • 1995
  • 정보관리 분야에서는 컴퓨터와 정보 네트워크의 발달, 그리고 초고속 정보통신망 구축과 같은 환경변화로 인하여 새로운 시대를 맞이하고 있다. 이러한 변화의 시대에 정보의 중요성과 새로운 정보기술의 발달, 정보이용자들의 주변환경 변화를 인식하게 됨에 따라 디지털 도서관(digital library)을 구상하게 되었다. 본고에서는 새롭게 등장한 디지털 도서관의 개념과 기능을 알아보고, CD-ROM, OCR 기법과 이미지 스캐닝, hypertext, hypermedia, multimedia와 같은 정보기술에 대해서 살펴보았다. 또한 이러한 기술을 응용한 시스템 사례를 살펴봄으로써 정보관리 분야에서 새로운 전자정보 서비스를 위한 전략과 정보의 디지털 화를 위한 응용가능성을 살펴보고자 한다.

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Development of sound level meter provided with ultra-low SPL measuring function -Creation and evaluation of super-silent spaces-

  • Kawakami, Fukushi;Terazono, Shinichi;Lee, Ho-Gi
    • 한국소음진동공학회:학술대회논문집
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    • 한국소음진동공학회 2010년도 춘계학술대회 논문집
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    • pp.760-761
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    • 2010
  • As is widely known, SPL measurement using sound level meter (SLM) is limited to higher than 30 dBA, because of the self-noise n(x) of condenser microphone (CM). The authors confirmed n(x) is composed of 3 kinds, each of which is stable enough under the condition -20 ~ +50 deg C to eliminate the influence of n(x) by subtracting its energy from the squared input signal in the integration process, as well as to develop new type of SLM with ultra-low SPL measuring function. This is so-called "0-dB SLM" since it enables to measure SPL down to around 0 dB-SPL. The RMS of n(x) is acquired and stored in ROM in advance, by placing CM in the supersilent space or by using dummy microphone with equivalent capacitance before the actual measurements.

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