• Title/Summary/Keyword: Sungkyunkwan

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DNA and DNA-CTMA composite thin films embedded with carboxyl group-modified multi-walled carbon nanotubes

  • Dugasani, Sreekantha Reddy;Gnapareddy, Bramaramba;Kesama, Mallikarjuna Reddy;Ha, Tai Hwan;Park, Sung Ha
    • Journal of Industrial and Engineering Chemistry
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    • v.68
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    • pp.79-86
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    • 2018

  • Although the intrinsic characteristics of DNA molecules and carbon nanotubes (CNT) are well known, fabrication methods and physical characteristics of CNT-embedded DNA thin films are rarely investigated. We report the construction and characterization of carboxyl (-COOH) group-modified multi-walled carbon nanotube (MWCNT-COOH)-embedded DNA and cetyltrimethyl-ammonium chloride-modified DNA (DNA-CTMA) composite thin films. Here, we examine the structural, compositional, chemical, spectroscopic, and electrical characteristics of DNA and DNA-CTMA thin films consisting of various concentrations of MWCNT-COOH. The MWCNT-COOH-embedded DNA and DNA-CTMA composite thin films may offer a platform for developing novel optoelectronics, energy harvesting, and sensing applications in physical, chemical, and biological sciences.

  • https://doi.org/10.1016/j.jiec.2018.07.031 인용 KSCI

Role of hydrogen peroxide in Rac1 mediated activation of p70s6k signaling pathway

  • Bae, Gyu-Un;Kwon, Hyoung-Keun;Kim, Gwan-Tae;Kim, Yong-Kee;Yoon, Jong-Woo;Cho, Eun-Jung;Lee, Hyang-Woo;Han, Jeung-Whan
    • Proceedings of the PSK Conference
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    • 2003.04a
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    • pp.222.1-222.1
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    • 2003

  • The signal transduction pathway leading to the activation of the p70s6k plays an important role in the progression of cells from G0/G1 to S phase of the cell cycle but remains incompletely characterized. We investigated the role of the Rho family G protein Rac1 in H2O2-mediated p70s6k activation. Transient expression of a dominant negative mutants of the small GTP-binding proteins Rac1 (Rac1N17) and Cdc42(Cdc42N17) showed reduced levels of slower migration on Western blots of one-dimensional SDS-PAGE in p70s6k and ERK1/2 by PDFG stimulation. (omitted)

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A review : atomic layer etching of metals

  • Yun Jong Jang;Hong Seong Gil;Gyoung Chan Kim;Ju Young Kim;Chang Woo Park;Do Seong Pyun;Ji Yeon Lee;Geun Young Yeom
    • Journal of the Korean institute of surface engineering
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    • v.57 no.3
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    • pp.125-139
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    • 2024

  • As the limits of semiconductor integration are approached, the challenges in semiconductor processes have intensified. And, for the production of semiconductors with dimensions under a few nanometers and to resolve the issues related to nanoscale device fabrication, research on atomic layer etching (ALE) technology has been conducted. The investigation related to ALE encompasses not only silicon and dielectric materials but also metallic materials. Particularly, there is an increasing need for ALE in next-generation metal materials that could replace copper in interconnect materials. This brief review will summarize the concept and methods of ALE and describe recent studies on potential next-generation metal replacements for copper, along with their ALE processes.

  • https://doi.org/10.5695/JSSE.2024.57.3.125 인용 PDF