• 제목/요약/키워드: Sungkyunkwan

검색결과 14,570건 처리시간 0.047초

Patterned Arrays of Well-Ordered ZnO Nanorods Assisted with Polystyrene Monolayer By Oxygen Plasma Treatment

  • Choi, Hyun Ji;Lee, Yong-Min;Lee, Yulhee;Seo, Hyeon Jin;Hwang, Ki-Hwan;Kim, Dong In;Yu, Jung-Hoon;Kim, Jee Yun;Nam, Sang Hun;Boo, Jin-Hyo
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.146-146
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    • 2016
  • Zinc Oxide (ZnO) was known as a promising material for surface acoustic wave devices, gas sensors, optical devices and solar cells due to piezoelectric material, large band gap of 3.37 eV and large exciton binding energy of 60 meV at room temperature. In particular, the alignment of ZnO nanostructures into ordered nanoarrays can bring about improved sensitivity of devices due to widen the surface area to catch a lot of gas particle. Oxygen plasma treatment is used to specify the nucleation site of round patterned ZnO nanorods growth. Therefore ZnO nanorods were grown on a quartz substrate with patterned polystyrene monolayer by hydrothermal method after oxygen plasma treatment. And then, we carried out nanostructures by adjusting the diameter of the arranged ZnO nanorods according to polystyrene spheres of various sizes. The obtained ZnO nanostructures was characterized by X-ray diffraction (XRD), Field emission scanning electron microscopy (FE-SEM).

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Characteristics of MINOS Structure using $TiO_2$ as Blocking Layer for Nonvolatile Memory applicable to OLED

  • Lee, Kwang-Soo;Jung, Sung-Wook;Kim, Kyung-Hae;Jang, Kyung-Soo;Hwang, Sung-Hyun;Lee, Jeoung-In;Park, Hyung-Jun;Kim, Jae-Hong;Son, Hyuk-Joo;Yi, Jun-Sin
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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    • pp.1284-1287
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    • 2007
  • Titanium dioxide ($TiO_2$) is promising candidate for fabricating blocking layer of gate dielectrics in non-volatile memory (NVM). In this work, we investigated $TiO_2$ as high dielectric constant material instead of silicon dioxide ($SiO_2$), which is generally used as blocking layer for NVM.

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Efficiency enhancement of Organic Light Emitting Diodes by the Aluminum Oxynitride Buffer Layer

  • Park, Hyung-Jun;Jang, Kyung-Soo;Jung, Sung-Wook;Hwang, Sung-Hyun;Lee, Jeoung-In;Lee, Kwang-Soo;Park, Keun-Hee;Nam, Eun-Kyoung;Jung, Dong-geun;Yi, Jun-Sin
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.675-678
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    • 2007
  • In organic light emitting diodes (OLEDs), the electrons and holes need to be injected efficiently to obtain the best device performance. This means that a small injection barrier height at the ITO/organic interface is required. In this study, the surface of the ITO anode was treated with an Aluminum oxynitride (AlON).

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Potential Wide-gap Materials as a Top Cell for Multi-junction c-Si Based Solar Cells: A Short Review

  • Pham, Duy Phong;Lee, Sunhwa;Kim, Sehyeon;Oh, Donghyun;Khokhar, Muhammad Quddamah;Kim, Sangho;Park, Jinjoo;Kim, Youngkuk;Cho, Eun-Chel;Cho, Young-Hyun;Yi, Junsin
    • Current Photovoltaic Research
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    • 제7권3호
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    • pp.76-84
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    • 2019
  • Silicon heterojunction solar cells (SHJ) have dominated the photovoltaic market up till now but their conversion performance is practically limited to around 26% compared with the theoretical efficiency limit of 29.4%. A silicon based multi-junction devices are expected to overcome this limitation. In this report, we briefly review the state-of-art characteristic of wide-gap materials which has played a role as top sub-cells in silicon based multi-junction solar cells. In addition, we indicate significantly practical challenges and key issues of these multi-junction combination. Finally, we focus to some characteristics of III-V/c-Si tandem configuration which are reaching highly record performance in multi-junction silicon solar cells.