• Title/Summary/Keyword: Sulfur deposition

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Effects of sulfur treatments on metal/InP schottky contact and $Si_3$$N_4$/InP interfaces (황처리가 금속/InP Schootky 접촉과 $Si_3$$N_4$/InP 계면들에 미치는 영향)

  • Her, J.;Lim, H.;Kim, C.H.;Han, I.K.;Lee, J.I.;Kang, K.N.
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.31A no.12
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    • pp.56-63
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    • 1994
  • The effects of sulfur treatments on the barrier heithts of Schottky contacts and the interface-state density of metal-insulator-semiconductor (MIS) capacitors on InP have been investigated. Schottky contacts were formed by the evaporation of Al, Au, and Pt on n-InP substrate before and after (NH$_{4}$)$_{2}$S$_{x}$ treatments, respectively. The barrier height of InP Schottky contacts was measured by their current-voltage (I-V) and capacitance-voltage (C_V) characteristics. We observed that the barrier heights of Schottky contacks on bare InP were 0.35~0.45 eV nearly independent of the metal work function, which is known to be due to the surface Fermi level pinning. In the case of sulfur-treated Au/InP ar Pt/InP Schottky diodes, However, the barrier heights were not only increased above 0.7 eV but also highly dependent on the metal work function. We have also investigated effects of (NH$_{4}$)$_{2}$S$_{x}$ treatments on the distribution of interface states in Si$_{3}$N$_{4}$InP MIS diodes where Si$_{3}$N$_{4}$ was provided by plasma enhanced chemical vapor deposition (PECVD). The typical value of interface-state density extracted feom 1 MHz C-V curve of sulfur-treated SiN$_{x}$/InP MIS diodes was found to be the order of 5${\times}10^{10}cm^{2}eV^{1}$. This value is much lower than that of MiS diodes made on bare InP surface. It is certain, therefore, that the (NH$_{4}$)$_{2}$S$_{x}$ treatment is a very powerful tool to enhance the barrier heights of Au/n-InP and Pt/n-InP Schottky contacts and to reduce the density of interface states in SiN$_{x}$/InP MIS diode.

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Mercury Research and Management in Korea (국내 수은 연구 동향 및 관리 현황)

  • Jurng, Jong-Soo;Shim, Shang-Gyoo
    • Journal of Korean Society for Atmospheric Environment
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    • v.25 no.2
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    • pp.99-107
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    • 2009
  • This paper reviews the current status of mercury research on exposure and contamination, mercury emissions, emission limits and control technologies, long-range transport and deposition research, and mercury management policy in Korea. According to a monitoring of the Ministry of Environment and the Ministry of Health and Welfare, blood mercury levels among Koreans are $5{\sim}8$ times higher than those of U.S. and Germany. The most dominant source of exposure to mercury is through dietary intake. Emissions of mercury from coal-fired power plants are estimated 8.93 ton/year in 2004. Emissions of mercury from other important sources, such as waste incineration, steel and cement manufacturing and non-ferrous metal smelting operations are to be further investigated. A study on long-range transport of mercury suggests that the dry deposition flux over the Yellow Sea was much greater than those for other oceans. As a whole, the amounts of wet depositions of nitrogen and sulfur were 1.9 and 1.5 times larger than the amounts of dry depositions in each species, respectively. Substantial influence from China caused by high emissions in East China and westerly wind was possibly suggested. However, the influence from nitrogen emission in Korea was also confirmed. Korean Government has already adopted stringent emission limits on mercury for incinerators and boilers in 2005. However, emission limits for coal-fired power plants and non-ferrous metal smelters are rather relaxed. As the above mentioned two sources can be two most important sources of mercury emissions, control strategy for those sources are to be considered.

Growth and Characterization of ZnS Thin Films by Hot Wall Method (Hot Wall법에 의한 ZnS 박막의 제작과 특성)

  • Lee, Sang-Tae
    • Journal of Navigation and Port Research
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    • v.26 no.1
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    • pp.120-126
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    • 2002
  • ZnS thin films were prepared on glass substrate at various deposition conditions by a HW apparatus and were systematically investigated the growth characteristics, in terms of deposition edges by a double beam spectro- photometer, and structural analysis by a x-ray diffraction rates were increased with incresing the cell temperature and vapor pressure of sulfur, but were decreased with increasing substrate temperature. The optical characteristics of thin films depends on the deposition rates. The band gap energies of 3.46∼3.52eV measured at room temperature are smaller than the theoretical value of 3.54eV, indicating that impurities exist in the crystal. All ZnS thin films are oriented in the (III) principal direction of a zincblende structure. By introducing the S vapor, optical and crystalline properties have been improved.

Fluid Inclusions of Daehwa and Donsan Tungsten-Molybdenum Deposits (대화(大華) 및 돈산(敦山) 중석(重石)·모리브덴 광상(鑛床)의 유체포유물(流體包有物))

  • Park, Hee-In;Choi, Suck-Won;Kim, Deog-Lae
    • Economic and Environmental Geology
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    • v.18 no.3
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    • pp.225-237
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    • 1985
  • Mineralization of Daehwa and Donsan W-Mo deposits can be devided into three distinct depositional stages on the basis of mineral paragenesis and flnid inclusion studies; stage I, deposition of oxides and silicates ; stage II, deposition of base-metal sulfides and sulfosalts with carbonates; stage III, deposition of barren calcite and fluorite. Tungsten, molybdenum and tin mineralization occurred in stage I. Fluid inclusion studies reveal that ore fluid of stage I were homogeneous $H_2O-CO_2$ fluids containing 3.5~14.6 mol % $CO_2$. Minimum temperature and pressure of stage I ore fluids were $240^{\circ}C$ and 500 bars respectively. Salinities of aqueous type I inclusions in minerals of stage I range from 3.7 to 7.6 wt. % equi. NaCl. whereas those of $CO_2$-containing type III inclusions range from 0.3 to 4.4 wt. %. Temperatures of stage II ore fluids range from 200 to $305^{\circ}C$ on the whole and salinities were in the range of 3.2~7.2 wt. %. Homogenization temperatures of fluid inclusions in calcite and fluorite of stage III range from 114 to $186^{\circ}C$ and salinities were in the range of 0.9~4.3 wt. %. Sulfur fugacities during stage II deduced from mineral assemblages and tamperature data from fluid inclusions declined from earlier to later in the range of $10^{-11}{\sim}10^{-18}atm$. Fluid inclusion evidences suggest that the dominance of $CO_2$ in ore fluid during W-Mo mineralization is the characteristic features of Cretaceous W-Mo deposits of central district of Korea compared to those of Kyeongsang basin district.

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STRATEGIC RESEARCH AT ORNL FOR THE DEVELOPMENT OF ADVANCED COATED CONDUCTORS: PART - I

  • Christen, D.K.;Cantoni, C.;Feenstra, R.;Aytug, T.;Heatherly, L.;Kowalewski, M.M.;List, F.A.;Goyal, A.;Kroeger, D.M.
    • Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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    • 2002.02a
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    • pp.339-339
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    • 2002
  • In the RABiTS approach to coated conductor development, successful (both economic and technological) depends on the refinement and optimization of each of three important components: the metal tape substrate, the buffer layer(s), and the HTS layer. Here we will report on the ORNL approach and progress in each of these areas. - Most applications will require metal tapes with low magnetic hysteresis, mechanical strength, and excellent crystalline texture. Some of these requirements are competing. We report on progress in obtaining a good combination of these characteristics on metal alloys of Ni-Cr and Ni-W. - The deposition of appropriate buffer layers is a crucial step. Recently, base research has shown that the presence of a stable sulfur superstructure present on the metal surface is needed for the nucleation and epitaxial growth of vapor-deposited seed buffer layers such as YSZ, CeO$_2$ and SrTiO$_3$. We report on the details and control of this superstructure for nickel tapes, as well as recent results for Cu and Ni-13%Cr. - Processes for deposition of the HTS coating must economically provide large values of the figure-of-merit for conductors, current x length. At ORNL, we have devoted efforts to a precursor/post-annealing approach to YBCO coatings, for which the deposition and reaction steps are separate. We describe motivation for and progress toward developing this approach. - Finally, we address some issues for the implementation of coated conductors in real applications, including the need for texture control and electrical stabilization of the HTS coating.

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Effect of sulfur addition on Cu2ZnSnSe4 thin film by Pulsed Laser Deposition (PLD를 이용한 CZTS의 박막의 S 첨가의 영향)

  • Jang, Yun-Jung;Amal, M. Ikhlasul;Alfaruqy, M. Hilmy;Kim, Kyoo Ho
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.06a
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    • pp.86.1-86.1
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    • 2010
  • Cu2ZnSnSe4는 CIS 태양전지의 In 대체 물질계로 주목을 받고 있는 저가형 태양전지 재료로 장차 차세대 태양전지 재료로 응용이 기대되고 있다. 그러나 에너지 밴드갭이 0.9~1.1eV로 다소 낮아 태양전지 광흡수층 재료로 사용하기 위해서는 wide band gab화 처리가 필요하다. 본 연구에서는 CZTSe에 S를 첨가하여 에너지 밴드갭을 확장하고자 하며, S의 첨가가 CZTSe 박막의 특성에 미치는 영향에 대하여 조사하였다. 실험의 편의성을 도모하고자 펄스레이저 법을 사용하여 증착하였다. 박막 조성 제어에는 Cu, Zn, Sn, Se, S 분말을 볼밀로 분쇄, 혼합하여 균질 혼합상 프리커서를 제조하고 이를 Cold Isostatic Press(CIP) 성형하여 Source target을 사용하였다. Pulsed YAG-Laser를 사용하여 soda lime glass상에 증착하고 조성, 구조, 조직을 관찰하고 에너지 밴드갭, 광흡수계수, 면저항, 전하밀도 등 특성을 조사하였다.

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A study on the fabrication of CdS nanowires using by Alumina Membrane (알루미나 멤브레인을 이용한 CdS nanowire 제작에 관한 연구)

  • Seo, Mun-Su;Lee, Su-Ho;Yoo, Hyun-Min;Lee, Jae-Hyeong;Choi, Won-Seok;Kim, Do-Young
    • Proceedings of the KIEE Conference
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    • 2011.07a
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    • pp.1493-1494
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    • 2011
  • CdS nanostructure materials have been fabricated in porous anodic aluminum oxide (AAO) template by using chemical bath deposition (CBD). These nanostructure materials had uniform diameters of about 15e200 nm, which correspond to the pore sizes of the templates used, and the length was up to 40 mm. X-ray diffraction (XRD) investigation demonstrates that CdS nanostructure materials were hexagonal polycrystalline in nature. As the pore diameter of AAO templates was enlarged, the preferential orientation of c-axis was improved. From PL analysis, the sulfur-deficient defects at the surfaces of CdS nanostructure materials were increasedwhen the samplewas synthesized in the template with larger pore diameter.

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Numerical Modeling of Pollutants using Local Wind Model in Gwangyang Bay, Korea (국지순환풍 모델을 이용한 광양만권 대기오염물질의 수치모델링)

  • 이상득
    • Journal of Korean Society for Atmospheric Environment
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    • v.19 no.1
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    • pp.13-23
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    • 2003
  • A local wind model and a three dimensional local environmental model including advection, diffusion, deposition. and photochemical reactions were performed at Gwangyang Bay, Korea, to predict air flow and air pollutants concentrations. A large grid was used, and nesting method was employed for small grid calculation. From the meterological module simulation, we were able to reproduce local wind characteristics such as sea/land winds and mountain/valley winds simulation at Gwangyang Bay. In addition, the concentration module showed high concentration regions at Yosu industrial complex, Gwangyang steel company. and Container anchor. It was also seen that air pollutants were dispersed by sea/land winds. A comparison between the measurement and the prediction of sulfur dioxide and nitric oxide, which are relatively low-reacted pollutants, was performed. However, the measured nitrogen dioxide and ozone concentrations were higher than the simulated ones. Particularly, ozone concentration between 8 a..m. and 8 p.m. agreed well, but the measured ozone during the rest of time were generally higher.

New Organic Semiconductors for Stable, High-Performance Organic Thin-Film Transistors

  • Takimiya, Kazuo;Miyazaki, Eigo;Yamamoto, Tatsuya;Izawa, Takafumi
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.975-978
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    • 2008
  • Novel sulfur-containing aromatic compounds were developed as stable, high-performance organic semiconductors for OTFT applications. Of them, dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) consisting of six aromatic rings gave high quality thin films by vapor deposition, which acted as a superior FET channel showing FET mobility as high as $3.0\;cm^2V^{-1}s^{-1}$. On the other hand, highly soluble 2,7-dialkyl[1]benzothieno[3,2-b][1]benzothiophenes ($C_n$-BTBTs) gave solution-processible OTFTs with FET mobility higher than $1.0\;cm^2V^{-1}s^{-1}$.

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Fabrication and Characteristics of $CuInS_2$ Thin Film ($CuInS_2$ 박막 제조 및 그 특성)

  • Park, Gye-Choon;Jeong, Woon-Jo;Kim, Seong-Ku;Ryu, Yong-Tek;Chung, Hae-Duck;Lee, Jean
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1992.11a
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    • pp.84-89
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    • 1992
  • The polycrystalline $CuInS_2$ thin films are prepared by vacuum heat treatment of layer, which is deposited by vaccum evaporation in order. The electrical and optical properties of the films are investigated at various sulfur deposition mole rate, substrate temperature, heat treatment temperature and time. From data, n type-$CuInS_2$ exhibits resistivity, transmittance and energy band gap with 142[${\Omega}{\cdot}cm$], 73[%], and 1.5[eV] respectively at optimum fabrication condition. Finally, the films are fabricated with chalcoprite structure.

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