• 한국분말재료학회지
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• 제30권2호
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• pp.116-122
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• 2023

Because magnets fabricated using Nd-Fe-B exhibit excellent magnetic properties, this novel material is used in various high-tech industries. However, because of the brittleness and low formability of Nd-Fe-B magnets, the design freedom of shapes for improving the performance is limited based on conventional tooling and postprocessing. Laser-powder bed fusion (L-PBF), the most famous additive manufacturing (AM) technique, has recently emerged as a novel process for producing geometrically complex shapes of Nd-Fe-B parts owing to its high precision and good spatial resolution. However, because of the repeated thermal shock applied to the materials during L-PBF, it is difficult to fabricate a dense Nd-Fe-B magnet. In this study, a high-density (>96%) Nd-Fe-B magnet is successfully fabricated by minimizing the thermal residual stress caused by substrate heating during L-PBF.

• 한국전기전자재료학회논문지
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• 제25권7호
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• pp.563-568
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• 2012

Indium tin oxide (ITO) films were prepared using radio frequency (RF) magnetron sputtering method, magnets were equipped near the target in the sputter to bring the plasma near the target. The effect of magnetic field that brings the plasma near the substrate was compared with that of substrate heating. The effect of substrate heating on the grain size of the ITO thin film was larger than that of the magnetic field. However, the grain size of the ITO thin film was larger when the magnetic field was applied near the substrate during the sputtering process than when the substrate was not heated and the magnetic field was not applied. If stronger magnetic field is applied near the substrate during sputtering, it can be expected that the ITO thin film with good electrical conductivity and high transparency is obtained at low substrate temperature. When magnetic field of 90 Gauss was applied near the substrate during sputtering, the mobility of the ITO thin film increased from 15.2 $cm^2/V.s$ to 23.3 $cm^2/V.s$, whereas the sheet resistivity decreased from 7.68 ${\Omega}{\cdot}cm$ to 5.11 ${\Omega}{\cdot}cm$.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2004년도 추계학술대회
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• pp.1225-1230
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• 2004

The effects of substrate material on the local heating performance of microheaters are studied by both numerical analysis and experiment. Transient conduction analysis shows that the substrate material with low thermal conductivity is critical to the local heating and fast response. A measurement technique for surface temperature field in microscale is newly proposed, which uses temperature sensitive fluorescent dye coated on the surface. The measured surface temperature fields on microheater arrays fabricated on different substrates are presented.

• Transactions on Electrical and Electronic Materials
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• 제6권3호
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• pp.106-109
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• 2005

We have investigated the generation of pretilt angle for a nematic liquid crystal (NLC) alignment with in-situ photoalignment method on polyimide (PI) surfaces using polymer films. Especially, we studied in-situ photoalignment changing heating temperature from $50^{\circ}C\;to\;120^{\circ}C$ on the polymer film. The LC aligning capabilities and pretilt angle on the polymer substrates were better than those on the glass substrate using in-situ photoalignment method. It is considered that this increase in pretilt angle may be attributed to the roughness of the micro-groove substrate induced by the in-situ photoalignment. As temperature of heated subtrate and UV exposure time increase, pretilt angle of the cell used polymer film increased. It is considered that the heating temperature of substrate is attributed to generate pretilt angle. Also, electro-optical performances of the in-situ photoaligned TN cell using the polymer substrate are almost the same as that of the TN cell using the glass substrate.

• 대한전자공학회논문지
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• 제23권2호
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• pp.243-248
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• 1986

The impurities in As and Ga sources and the contamination of the GaAs substrate prior to growing of MBE GaAs epitaxial layer have been investigated using RHEED, AES and RGA methods. The as source was contaminated by H2O, CO, CO2 and AsO, and the Ga source was contaminated by H2, H2O, CO and CO2. These contaminants could easily be removed by prebaking the source. On the other hand, GaAs substrate was contaminated principally carbon and oxygen. The oxygen could easily be removed by heating the substrate above 480\ulcorner, and the carbon could also be reduced by sputtering the substrate with 1ke V Ar+. The chemically etched substrate surface prior to growing the layer was rough, but it was made to be smooth and clean by heating it above 530 \ulcorner.

• Composites Research
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• 제30권3호
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• pp.181-187
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• 2017

나노 및 마이크로 크기의 철(Fe), 마그네타이트($Fe_3O_4$) 및 니켈(Ni) 입자가 분산된 열가소성 폴리우레탄(TPU) 접착필름에서 각 금속의 크기 및 형상 그리고 피착재의 종류에 따른 접착필름의 유도가열 거동을 연구하였다. 연구결과 동일한 첨가량 및 유사한 입자 크기에서 철과 니켈이 분산된 열가소성 TPU 접착필름에 비해 마그네타이트가 분산된 TPU 접착필름의 발열이 높게 나타났다. 철과 니켈의 입자 크기가 자기장의 표면 침투 깊이(Penetration skin depth) 보다 클 경우 와전류에 의한 발열로 인해 입자 크기가 커질수록 초기 승온속도와 최고 온도가 증가하는 것을 확인하였다. 서로 다른 형태를 갖는 니켈 입자를 사용한 유도가열 실험 결과 편상(flake)의 입자가 TPU 접착필름에 분산되었을 때 자기이력(Magnetic hysteresis)에 의한 열 발생으로 가장 높은 발열이 나타남을 알 수 있었다. 또한 금속 입자가 분산된 TPU 접착필름이 서로 다른 피착재에 적용되었을 때 발열현상이 상이하게 나타났으며 피착재의 열전도도에 따른 결과를 확인하였다.

• 한국전산유체공학회지
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• 제17권4호
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• pp.87-92
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• 2012

A numerical study of transient conjugate heat transfer on micro heater in a micro-channel substrate under pulsed heating was conducted. It was found that the time constant is not affected by the pulse heating magnitude at same operating condition. Furthermore, the time constant increases with low substrate thermal diffusivity, low Reynolds number, and large channel diameter. Since the time constant is a dominant parameter to characterize transient heat transfer, it should be considered for transient convective heat transfer coefficient.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.52-52
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• 2011

A novel deposition process for n-type nanocrystalline silicon (n-type nc-Si) thin films at room temperature has been developed by adopting the neutral beam assisted chemical vapor deposition (NBa-CVD). During formation of n-type nc-Si thin film by the NBa-CVD process with silicon reflector electrode at room temperature, the energetic particles could induce enhance doping efficiency and crystalline phase in polymorphous-Si thin films without additional heating on substrate; The dark conductivity and substrate temperature of P-doped polymorphous~nano crystalline silicon thin films increased with increasing the reflector bias. The NB energy heating substrate(but lower than $80^{\circ}C$ and increase doping efficiency. This low temperature processed doped nano-crystalline can address key problem in applications from flexible display backplane thin film transistor to flexible solar cell.

• 한국결정성장학회지
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• 제12권6호
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• pp.288-291
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• 2002

We developed a new RF indirect-heating LPE furnace. The thermal gradient of our newly developed furnace is less than that of direct heating, and is as gentle as that of the resistance-heating LPE furnace. With this new furnace, the heating and/or cooling is faster than that of the resistance-heating furnace. Impurity-doped YIG film was grown from a $PbO-B_{2}O_{3}$, based flux on a (111) GGG substrate. To study the effect of the impurities on the MSSW threshold power and the saturation response time, we used two microstrip lines to excite and propagate the MSSW at 1.9 GHz. The MSSW threshold power and saturation response time was found to be related to the $\Delta$H.

• 한국표면공학회지
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• 제46권4호
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• pp.162-167
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• 2013

Encapsulation is required since organic materials used in OLED devices are fragile to water vapor and oxygen. Laser sealing method is currently used where IR laser is scanned along the glass-frit coated lines. Laser method is, however, not suitable to encapsulating large-sized glass substrate due to the nature of sequential scanning. In this work we propose a new method of encapsulation using Joule heating. Conductive layer is patterned along the sealing lines on which the glass frit is screen printed and sintered. Electric field is then applied to the conductive layer resulting in bonding both the panel glass and the encapsulation glass by melting glass-frit. In order to obtain uniform bonding the temperature of a conductive layer having a shape of closed loop should be uniform. In this work we conducted simulation for heat distribution according to the structure of a conductive layer used as a Joule-heat source. Uniform temperature was obtained with an error of 5% by optimizing the structure of a conductive layer. Based on the results of thermal simulations we concluded that Joule-heating induced encapsulation would be a good candidate for encapsulation method especially for large area glass substrate.