• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.31 no.6 s.261
• /
• pp.665-670
• /
• 2007

Alpha-phase alumina TGO(Thermally Grown Oxide) forms on the interface between zirconia top coat and bond coat of thermal barrier coating system for superalloys during exposure to high temperature over $1000^{\circ}C$. It is known to provide a good protection against hot corrosion and to cause surface failure such as rumpling and cracking due to difference in thermal expansion coefficient from the substrate metal and the lateral growth. Consequently, mechanical properties of the alumina TGO at the high temperature are the key parameters determining the integrity of TBC system. In this work, by using Fecralloy foils as the alumina forming substrate, creep tests and tensile tests have been performed with various TGO thicknesses$(h=0{\sim}4{\mu}m)$ and yttrium contents(0, 200ppm) at $1200^{\circ}C$. Displacement-time curves and load-displacement curves for each TGO thickness(h=1,2,..) were measured from the creep and tensile tests, respectively, and compared with the curves without TGO thickness(h=0). As the result, the intrinsic tensile and creep properties of TGO itself were determined.

• Journal of Magnetics
• /
• v.6 no.3
• /
• pp.90-93
• /
• 2001

Co/$Al_O_3$/NiFe and CO/$Al_O_3$/Co tunnel junctions were fabricated by a radio frequency magnetron sputtering at room temperature with hard mask on glass and $4^{\circ}$ tilt cut Si (111) substrates. The barrier layer was formed through two steps. After the Al layer was deposited, it was oxidized in the chamber of a reactive ion etching system (RIE) with $O_2$plasma at various conditions. The dependence of the TMR value and junction resistance on the thickness of Al layer (before oxidation) and oxidation parameters were investigated. Magnetoresistance value of 7% at room temperature was obtained by optimizing the Al layer thickness and oxidation conditions. Circular shape junctions on $4^{\circ}$tilt cut Si (111) substrate showed 4% magnetoresistance. Photovoltaic energy conversion effect was observed with the cross-strip geometry junctions on Si substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11a
• /
• pp.455-458
• /
• 2001

The thin films of high permitivity in ferroelectric materials using a capacitor are applied to DRAMs and FRAMs. (Ba, Sr)TiO$_3$ thin films as ferroelectric materials were prepared by the sol-gel method and made by spin-coating on the Pt/Ti/SiO$_2$/Si substrate at 4,700 [rpm] for 10 seconds. The devices of BST thin films to composite (Ba$\_$0.7/Sr$\_$0.3/)TiO$_3$ were fabricated by changing of the depositing layer number on Pt/Ti/SiO$_2$/Si substrate. The thin film capacitor to be ferroelectric devices was investigated by structural and electrical properties. The thickness of BST thin films at each coating numbers 3, 4 and 5 times was 2500[${\AA}$], 3500[${\AA}$], 3800[${\AA}$]. The dielectric factor of thin film when the coating numbers were 3, 4 and 5 times was 190, 400 and 460 on frequency 1[MHz]. The dielectric loss of BST thin film was linearly increased by increasing of the specimen area.

• Proceedings of the KIEE Conference
• /
• 2004.11a
• /
• pp.183-186
• /
• 2004

The metal-ferroelectric-insulator-semiconductor(MFIS) capacitors were fabricated using a metalorganic decomposition (MOD)method. The $CeO_2$ thin films were deposited as a buffer layer on Si substrate and $Bi_{3.25}La_{0.75}Ti_3O_{12}$ (BLT) thin films were used as a ferroelectric layer. The electrical and structural properties of the MFIS structure were investigated by varying the $CeO_2$ layer thickness. The width of the memory window in the capacitance-voltage (C-V)curves for the MFIS structure decreased with increasing thickness of the $CeO_2$ layer. Auger electron spectroscopy (AES) and transmission electron microscopy (TEM) show no interdiffusion by using the $CeO_2$ film as buffer layer between the BLT film and Si substrate. The experimental results show that the BLT-based MFIS structure is suitable for non-volatile memory field-effect-transistors (FETs) with large memory window.

• Journal of Powder Materials
• /
• v.12 no.2 s.49
• /
• pp.106-111
• /
• 2005

The effect of post-heat treatment on the coating characteristics and the fatigue strength of the gas flame thermally sprayed Stellite alloy coatings on $0.35\%$ carbon steel were investigated. The fatigue fracture surfaces of the heat treated samples were observed using SEM (Scanning Electron Microscopy). For as-sprayed samples, there was considerable scattering in the fatigue life due to the presence of the pores in the coating. After the post-heat treatment to improve the microstructural characteristics of the coating layer, the fatigue strength of the specimens was greatly improved, increasing with increasing the coating thickness. For the specimens with the 0.3mm and 0.5mm thick coating, the fatigue cracks originated in the substrate region just below the interface. On the contrary, for the specimens with the 1.0mm thick coating, they nucleated at the pore within the coating, and the fatigue strength was 2.6 times higher than that of the substrate due to the high fatigue resistance of the coating.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.338-338
• /
• 2007

Photo-conductive properties of CdS films deposited on glass substrates by a reactive sputtering in Ar atmosphere were characterized as a function of working pressure and the film thickness. The XRD measurements of CdS films revealed obvious (002) preferred orientation. In 300nm-thick of films, difference between dark and photo-resistance increases with increasing working pressure within the films. The films at 5 mTorr of working pressure show a dark resistance of approximately $1\;{\times}\;10^6\;{\Omega}/{\square}$ and a photo-resistance of $3\;{\times}\;10^4\;{\Omega}/{\square}$. The decrease dark- and photo-resistance of films as thickness decrease were $1.4\;{\times}\;10^6$ and $3\;{\times}\;10^4\;{\Omega}/{\square}$, respectively. CdS films deposited on glass substrates are considered tobe suitable for photo-conductivity materials in stealth radome applications.

• Korean Journal of Materials Research
• /
• v.15 no.7
• /
• pp.465-472
• /
• 2005

Preparation of copper film on PET substrate was carried out by cyclic operation of RF-magnetron­sputtering under continuous operation of ECR-CVD. The purpose of this study is aimed to an increase in deposition rate with keeping excellent adhesion between copper film and PET. In order to optimize the sputtering time under continuous ECR-CVD, cyclic operation concept is employed. By changing parameters of cyclic operation such as split of e and cycle time of A, the characteristics and thickness of the deposited copper film are controlled. As $\theta$ value increase, film thickness could confirm to increase and its surface resistivity value decreases. The highest adhesive strength appears at $\theta=0.33$ and cycle time of 30 min. The uniformity of copper film shows $5\%$ in our experimental range.

• Journal of Surface Science and Engineering
• /
• v.32 no.1
• /
• pp.3-9
• /
• 1999

Pt thin film of about 7000$\AA$ thickness was deposited on the alumina substrate using DC Magnetron Sputter and the characteristics of the film for temperature sensor were investigated. When film of about 7000$\AA$ thickness was deposited at working gas pressure of $2.0{\times}10^{-3}$torr, sputtering power of 50W, substrate temperature of $350^{\circ}C$(Ts), sheet resistance(Rs), resistivity($\rho$) and temperature coefficient of resistivity(TCR) of the film were respectively 0.39$\Omega$/$\square$, 27.60$\mu\Omega$-cm and $3350 ppm/^{\circ}C$. When the film was annealed at $1000^{\circ}C$ for 240min in hydrogen ambient, Rs, $\rho$ and TCR were respectively 0.236$\Omega$/$\square$, 15.18$\mu\Omega$-cm and 3716 ppm/$3716 ppm/^{\circ}C$. When working gas of 15sccm oxygen and 100sccm Argon were used, Rs, $\rho$ and TCR were respectively 0.335$\Omega$/$\square$, 22.45$\mu\Omega$-cm and $3427 ppm/^{\circ}C$. When the film was annealed at $1000^{\circ}C$ for 240min, Rs, $\rho$and TCR were respectively 0.224/$\Omega$$\square$, 14$\mu\Omega$-cm and $3760 ppm/^{\circ}C$ and the characteristics of the film were much improved.

• Tribology and Lubricants
• /
• v.34 no.6
• /
• pp.313-317
• /
• 2018

Carbon-based coatings, including carbon nanotubes (CNTs), graphene, and buckyball ($C_{60}$), receive much interest because of their outstanding mechanical and electrical properties for a wide range of electromechanical component-based applications. Previous experimental results demonstrate that these carbon-based coatings are promising solid lubricants because of their superior tribological properties, and thus help prolong the lifetime of silicon-based applications. In this study, CNT coatings are deposited on a bare silicon (100) substrate by electrodynamic spraying under different deposition conditions. During the coating deposition, the applied voltage, CNT concentration of the solution, distance between the injecting nozzle and the substrate and diameter of the injecting nozzle are optimized to control the thickness and surface roughness of the CNT coatings. The surface morphology and thickness of the coatings are characterized by scanning electron microscopy (SEM) and atomic force microscopy (AFM), respectively. The friction and wear properties of the coatings are investigated by using a pin-on-reciprocating-type tribotester under various experimental conditions. The friction coefficient of the CNT coating is as low as 0.15 under high normal loads. The overall results reveal that CNT coatings deposited by electrodynamic spraying provide relatively uniform with superior lubrication performance.

• Korean Journal of Metals and Materials
• /
• v.47 no.12
• /
• pp.873-880
• /
• 2009

Water-vapor permeation through metallic barriers deposited on polymer substrates has been an important technological issue because the performance of the barrier is critical to the reliability of flexible organic devices. For the development of long-lifetime flexible organic devices, two different sets of samples were designed and demonstrated from the viewpoint of the water-vapor transmission rate (WVTR). Aluminum (Al) and polyethylene terephthalate (PET) were chosen for the barrier layer and the polymer substrate, respectively. Two stacking structures, a single-layer (Al/PET) structure and a double-layer (Al/PET/Al) structure, were used for the WVTR measurement. For the single-layer structure, the WVTR decreases as the thickness of the barrier layer increases. Compared to the single-layer sample, the double-layer sample showed superior WVTR performance (by nearly three times) when the total thickness of the Al barrier was greater than 100 nm.