• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.293-293
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• 2014

Over last decade InGaN alloy structures have become the one of the most promising materials among the numerous compound semiconductors for high efficiency light sources because of their direct band-gap and a wide spectral region (ultraviolet to infrared). The primary cause for the high quantum efficiency of the InGaN alloy in spite of high threading dislocation density caused by lattice misfit between GaN and sapphire substrate and severe built-in electric field of a few MV/cm due to the spontaneous and piezoelectric polarizations is generally known as the strong exciton localization trapped by lattice-parameter-scale In-N clusters in the random InGaN alloy. Nonetheless, violet-emitting (390 nm) conventional low-In-content InGaN/GaN multi-quantum wells (MQWs) show the degradation in internal quantum efficiency compared to blue-emitting (450 nm) MQWs owing higher In-content due to the less localization of carrier and the smaller band offset. We expected that an improvement of internal quantum efficiency in the violet region can be achieved by replacing the conventional low-In-content InGaN/GaN MQWs with ultra-thin, high-In-content (UTHI) InGaN/GaN MQWs because of better localization of carriers and smaller quantum-confined Stark effect (QCSE). We successfully obtain the UTHI InGaN/GaN MQWs grown via employing the GI technique by using the metal-organic chemical vapor deposition. In this work, 1 the optical and structural properties of the violet-light-emitting UTHI InGaN/GaN MQWs grown by employing the GI technique in comparison with conventional low-In-content InGaN/GaN MQWs were investigated. Stronger localization of carriers and smaller QCSE were observed in UTHI MQWs as a result of enlarged potential fluctuation and thinner QW thickness compared to those in conventional low-In-content MQWs. We hope that these strong carrier localization and reduced QCSE can turn the UTHI InGaN/GaN MQWs into an attractive candidate for high efficient violet emitter. Detailed structural and optical characteristics of UTHI InGaN/GaN MQWs compared to the conventional InGaN/GaN MQWs will be given.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.162-162
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• 2017

AlCrN 코팅은 높은 경도, 낮은 표면 조도 등의 상온에서의 우수한 기계적 특성 이외에 고온에서 안정한 합금상의 형성으로 인하여 우수한 내열성을 보이는 코팅이며, Si을 첨가하여 나노복합구조를 갖는 AlCrSiN 코팅은 고경도 특성을 나타내는 나노결정립과 고내열성을 나타내는 $Si_3N_4$ 비정질이 동시에 존재함으로써 뛰어난 고온 특성까지 보유하여 공구 코팅으로의 적용 가능성이 크다. 본 연구에서는, 가혹화된 공구사용 환경 대응 하는 더욱 우수한 내마모성 및 내열성을 보이는 코팅막을 개발하기 위해 AlCrN/AlCrSiN 이중층 코팅을 합성하였다. 합성된 코팅의 구조 및 물성을 분석하기 위해 field emission scanning electron microscopy(FE-SEM), nano-indentation, atomic force microscopy(AFM) 및 ball-on-disk wear tester를 사용하였다. 내열성을 확인하기 위하여 코팅을 furnace에 넣어 500, 600, 700, 800, 900도에서 30분 동안 annealing한 후에 nano-indentation을 사용하여 경도를 측정을 하였다. 5:5, 7:3, 9:1의 두께 비율로 AlCrN/AlCrSiN 이중층 코팅을 합성하였으며 모든 코팅의 두께는 $3{\mu}m$로 제어되었다. AlCrN 코팅층의 두께가 증가할수록, 이중층 코팅의 경도 및 내마모성은 점차 향상되었지만 코팅의 밀착력은 감소하였다. 일반적으로 AlCrN 코팅은 상대적으로 높은 잔류응력을 갖고 있으므로, AlCrN 층의 두께비율이 증가함에 따라 코팅내의 잔류응력이 높아져 코팅의 경도는 증가하고 밀착특성은 낮아진 것으로 판단된다. AlCrSiN 상부층 공정시 기판 바이어스 전압을 -50 ~ -200V 로 증가시키면서 이중층 코팅을 합성하였다. XRD 분석 결과, 공정 바이어스 전압이 증가함에 따라 AlCrSiN 상부층은 점차 비정질화 되었고, 코팅의 경도와 표면 특성이 향상되는 것을 확인하였다. 이러한 특성 향상은 높은 바이어스 인가가 이온 충돌효과의 증가를 야기시켰으, 이로 인해 치밀한 코팅층 합성에 의한 결과로 판단된다. AlCrN/AlCrSiN 이중층 코팅을 어닐링 한 후 경도 분석 결과, -150, -200V에서 합성한 코팅은 900도 이상에서 26GPa 이상의 높은 경도를 보인 것으로 보아 우수한 내열성을 갖는 것으로 확인 되었다. 이는 AlCrSiN 상부층의 높은 Si 함량 (11at.%) 으로 인한 충분한 $Si_3N_4$ 비정질상의 형성과, 고바이어스 인가로 인한 AlCrN 결정상과 $Si_3N_4$ 비정질상의 고른 분배가 코팅의 내열성을 향상시키는데 기여를 한 결과로 판단된다.

• Journal of Biosystems Engineering
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• v.25 no.2
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• pp.97-106
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• 2000

To develop the grain moisture meter using microwave free space transmission technique, a 10.5GHz microwave signal with the power of 11mW generated by an oscillar with a dielectric resonator is transmitted to an isolator and radiated from a transmitting $2{\times}2$ microstrip patch array antenna into the sample holder filled with the 12 to 26%w.b. of Korean Hwawung paddy rice. the microwave signal, attenuated through the grain with moisture, is collected by a receiving $2{\times}2$ microstrip patch array antenna and detected using a Shottky diode with excellent high frequency characteristic. A pair of light and simple microstrip patch array antenna for measurement of grain moisture content is designed and implemented on atenflon substrate with trleative dielectric constant of 2.6 and thickness of 0.54 by using Ensemble ver. 4.02 software. The aperture of microstrip patch arrays is 41 mm width and 24mm high. The characteristics of microstrip patch antenna such as grain. return loss, and bandwidth are 11.35dBi, -38dB and 0.35GHz($50^{\circ}$ at far-field pattern of E and H plane. The width of the sample holder is large enough to cover the signal between the antennas temperature and bulk density respectively. The calibration model for measurement of grain moisture content is proposed to reduce the effects of fluectuations in bulk density and temperature which give serious errors for the measurements . From the results of regression analysis using the statistically analysis method, the moisture content of grain samples (MC(%)) is expressed in terms of the output voltage(v), temperature (t), and bulk density of samples(${\rho}b$)as follows ;$$MC(%)\;=\;(-3.9838{\times}10^{-8}{\times}v^{3}+8.023{\times}10^{-6}{\times}v^{2}-0.0011{\times}v-0.0004{\times}t+0.1706){\frac{1}{{\rho}b}}{\times}100$ Its determination coefficient, standard error of prediction(SEP) and bias were found to be 0.9855, 0.479%w.b. and -0.0.369 %w.b. respectively between measured and predicted moisture contents of the grain samples.

• Journal of the Korean Vacuum Society
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• v.21 no.6
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• pp.328-332
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• 2012

The work function of Ag (silver) is too low (~4.3 eV) to be used as an electrode of T-OLED (Top Emission Organic Light Emitting Diode). To solve this weakness, researches used plasma-, UV-, or thermal treatment on Ag films in order to increase the work function (~5.0 eV). So, most of studies have focused only on the work function of various treated Ag films, but studies focusing on nanomechanical properties were very important to investigate the efficiency and life time of T-OLED etc. In this paper, we focused on the mechanical properties of the Ag and $AgO_x$ film. The Ag was deposited on a glass substrate with the thickness of 150 nm by using rf-magnetron sputter with the power was fixed at 100 W and working pressure was 3 mTorr. The deposited Ag film was UV treated by UV lamp for several minutes (0~9 min). We measured the sheet resistance and mechanical property of the deposited film. From the experimental result, there were some differences of the sheet resistance and surface hardness of Ag thin film between short time (0~3 min) and long time UV treatment. These result presumed that the induced stress was taken place by the surface oxidation after UV treatment.

• Journal of Welding and Joining
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• v.30 no.5
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• pp.64-69
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• 2012

Sn-Bi eutectic alloy has been widely used as one of the key solder materials for step soldering at low temperature. The Sn-58Bi solder paste containing chloride flux was adopted to compare with that using the chloride-free flux. The paste was applied on the electroless nickel-immersion gold (ENIG) surface finish by stencil printing, and the reflow process was then performed at $170^{\circ}C$ for 10 min. After reflow, the solder joints were aged at $125^{\circ}C$ for 100, 200, 300, 500 and 1000 h in an oven. The interfacial microstructures were obtained by using scanning electron microscopy (SEM), and the composition of intermetallic compounds (IMCs) was analyzed using energy dispersive spectrometer (EDS). Two different IMC layers, consisting of $Ni_3Sn_4$ and relatively very thin Sn-Bi-Ni-Au were formed at the solder/surface finish interface, and their thickness increased with increasing aging time. The wettability of solder joints was investigated by wetting balance test. The mechanical property of each aging solder joint was evaluated by the ball shear test in accordance with JEDEC standard (JESD22-B117A). The results show that the highest shear force was measured when the aging time was 100 h, and the fracture mode changed from ductile fracture to brittle fracture with increasing aging time. On the other hand, the chloride flux in the solder paste did not affect the shear force and fracture mode of the solder joints.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.27-27
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• 2011

For the design of real applicable molecular devices, current-voltage properties through molecular nanostructures such as metal-molecule-metal junctions (molecular junctions) have been studied extensively. In thiolate monolayers on the gold electrode, the chemical bonding of sulfur to gold and the van der Waals interactions between the alkyl chains of neighboring molecules are important factors in the formation of well-defined monolayers and in the control of the electron transport rate. Charge transport through the molecular junctions depends significantly on the energy levels of molecules relative to the Fermi levels of the contacts and the electronic structure of the molecule. It is important to understand the interfacial electron transport in accordance with the increased film thickness of alkyl chains that are known as an insulating layer, but are required for molecular device fabrication. Thiol-tethered RuII terpyridine complexes were synthesized for a voltage-driven molecular switch and used to understand the switch-on mechanism of the molecular switches of single metal complexes in the solid-state molecular junction in a vacuum. Electrochemical voltammetry and current-voltage (I-V) characteristics are measured to elucidate electron transport processes in the bistable conducting states of single molecular junctions of a molecular switch, Ru(II) terpyridine complexes. (1) On the basis of the Ru-centered electrochemical reaction data, the electron transport rate increases in the mixed self-assembled monolayer (SAM) of Ru(II) terpyridine complexes, indicating strong electronic coupling between the redox center and the substrate, along the molecules. (2) In a low-conducting state before switch-on, I-V characteristics are fitted to a direct tunneling model, and the estimated tunneling decay constant across the Ru(II) terpyridine complex is found to be smaller than that of alkanethiol. (3) The threshold voltages for the switch-on from low- to high-conducting states are identical, corresponding to the electron affinity of the molecules. (4) A high-conducting state after switch-on remains in the reverse voltage sweep, and a linear relationship of the current to the voltage is obtained. These results reveal electron transport paths via the redox centers of the Ru(II) terpyridine complexes, a molecular switch.

• Korean Journal of Materials Research
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• v.9 no.9
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• pp.896-899
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• 1999

A carbon dioxide gas sensor was studied as a function of temperature and $CO_2$concentration in the Li$_2$ZrO$_3$ system. Lithium zirconate(Li$_2$ZrO$_3$) was synthesized by the heat-treatment of zirconia(ZrO$_2$)and Lithium carbonate(Li$_2$CO$_3$). The specimens were prepared both as bulk disk, 10mm in diameter and 1.0mm thickness, and thick films on an alumina substrate. Lithium zirconate readily responded to $CO_2$concentration from 0.1% to 100% in the range of 45$0^{\circ}C$ to $650^{\circ}C$. The sensitivity to $CO_2$ was dependent on the measuring temperature. Lithium zirconate(Li$_2$ZrO$_3$) decomposes into Li$_2$CO$_3$ and ZrO$_2$after the reaction with $CO_2$in the range of 45$0^{\circ}C$ to $650^{\circ}C$. Li$_2$CO$_3$ changes into Li$_2$O and $CO_2$ above $650^{\circ}C$. The material showed difficulty with reversibility and recovery. The optimum temperature for the highest sensitivity is around 55$0^{\circ}C$.

• Korean Journal of Materials Research
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• v.13 no.6
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• pp.347-351
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• 2003

II-Ⅵ ZnO compound semiconductor thin films were grown on $\alpha$-Al$_2$O$_3$(0001) single crystal substrate by radical beam assisted molecular beam epitaxy and the optical properties were investigated. Zn(6N) was evaporated using Knudsen cell and O radical was assisted at the partial pressure of 1$\times$10$^{4}$ Torr and radical beam source of 250-450 W RF power. In $\theta$-2$\theta$ x-ray diffraction analysis, ZnO thin film with 500 nm thickness showed only ZnO(0002)and ZnO(0004) peaks is believed to be well grown along c-axis orientation. Photoluminescence (PL) measurement using He-Cd ($\lambda$=325 nm) laser is obtained in the temperature range of 9 K-300 K. At 9 K and 300 K, only near band edge (NBE) is observed and the FWHM's of PL peak of the ZnO deposited at 450 RF power are 45 meV and 145 meV respectively. From no observation of any weak deep level peak even at room temperature PL, the ZnO grains are regarded to contain very low defect density and impurity to cause the deep-level defects. The peak position of free exciton showed slightly red-shift as temperature was increased, and from this result the binding energy of free exciton can be experimentally determined as much as $58\pm$0.5 meV, which is very closed to that of ZnO bulk. By van der Pauw 4-point probe measurement, the grown ZnO is proved to be n-type with the electron concentration($n_{e}$ ) $1.69$\times$10^{18}$$cm^3$, mobility($\mu$) $-12.3\textrm{cm}^2$/Vㆍs, and resistivity($\rho$) 0.30 $\Omega$$\cdot$cm.

• Journal of Sensor Science and Technology
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• v.10 no.6
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• pp.295-303
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• 2001

White emission thin film electroluminecent device was fabricated with ZnS for phosphor layers and BST ferroelectric thin film for insulating layers. The ZnS:Mn and $ZnS:SmF_3$ layers were used for emission of red color. Also the $ZnS:TbF_3$ and $ZnS:AgF_3$ layers were used to emission of green and blue color, respectively. And the fabrication conditions of the BST insulating layers were followings, that is, the composition ratio of target, substrate temperature, working pressure and operating gas ratio were $Ba_{0.5}Sr_{0.5}Ti_{0.3}$, $400^{\circ}C$, 30 mTorr and 9:1, respectively. The thickness of phosphor were 150 nm for each layers and the insulating layers of upper and bottom were 400 nm and 200 nm, respectively. The luminesence threshold voltage was $75\;V_{rms}$ and the maximum brightness of the thin film electroluminecent device was $3200\;cd/m^2$ at $100\;V_{rms}$.

• Applied Chemistry for Engineering
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• v.17 no.5
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• pp.471-475
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• 2006

$VO_x$ thin films with the thickness of 450 nm were prepared on a $Pt/Ti/SiO_{2}/Si$ substrate at room temperature by a reactive radio frequency (rf) magnetron sputtering method. The deposition rates of $VO_x$ thin films were investigated as a function of $O_{2}$ concentration and rf power. As the $O_{2}$ concentration in a $O_{2}/Ar$ mixture increased, the deposition rate decreased. However, the deposition rate increased with increasing rf power. The deposited $VO_x$ thin films were annealed at $450^{\circ}C$ for 2, 4, and 6 h in $O_{2}$ and $N_{2}$ ambient. After annealing, the phase changes of $VO_x$ thin films were investigated using X-ray diffraction analysis. The plane and cross-sectional views of $VO_x$ thin films before and after annealing were observed by field emission scanning electron microscopy. The metal-insulator transition (MIT) properties of $VO_x$ thin films were measured using current-voltage measurement. The excellent MIT properties were observed in $VO_x$ thin films annealed in $O_{2}$ ambient.